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1. 发明授权

US09190956B2 Subharmonic mixer 有权
标题翻译：次谐调音台
公开(公告)号：US09190956B2
公开(公告)日：2015-11-17
申请号：US13697824
申请日：2011-05-13
申请人： Hartmut G. Roskos , Alvydas Lisauskas , Sebastian Boppel
发明人： Hartmut G. Roskos , Alvydas Lisauskas , Sebastian Boppel
IPC分类号： G06F7/44 , H03D7/12
CPC分类号： H03D7/125
摘要： A sub-harmonic electronic mixer has at least one field effect transistor (FET) having a gate, source, and drain; and a useful signal input at a useful frequency; and a local oscillator input. The input receives the oscillator signal at a frequency being an integral fraction of the useful frequency, plus or minus a mixing frequency to provide a signal output. A gate of the FET and/or the drain and/or the source receives the useful signal to generate a gate-source voltage and/or a drain-source voltage whereby the gate receives the local oscillator signal to generate a gate-source voltage, and the drain or a source receives the local oscillator signal to generate a drain-source voltage. A phase shift is introduced between the signal received at the gate and the signal received at the drain or source of the FET.
摘要翻译：子谐波电子混合器具有至少一个具有栅极，源极和漏极的场效应晶体管（FET）; 并在有用的频率输入有用的信号; 和本地振荡器输入。该输入以与有用频率成正比的频率接收振荡器信号，加或减一个混频以提供信号输出。 FET和/或漏极和/或源极的栅极接收有用信号以产生栅极 - 源极电压和/或漏极 - 源极电压，由此栅极接收本地振荡器信号以产生栅极 - 源极电压，并且漏极或源接收本地振荡器信号以产生漏极 - 源极电压。在栅极接收的信号和在FET的漏极或源极处接收的信号之间引入相移。

2. 发明申请

US20140145778A1 Subharmonic Mixer 有权
标题翻译：次谐调音台
公开(公告)号：US20140145778A1
公开(公告)日：2014-05-29
申请号：US13697824
申请日：2011-05-13
申请人： Hartmut G. Roskos , Alvydas Lisauskas , Sebastian Boppel
发明人： Hartmut G. Roskos , Alvydas Lisauskas , Sebastian Boppel
IPC分类号： H03D7/12
CPC分类号： H03D7/125
摘要： A sub-harmonic electronic mixer has at least one field effect transistor (FET) having a gate, source, and drain; and a useful signal input at a useful frequency; and a local oscillator input. The input receives the oscillator signal at a frequency being an integral fraction of the useful frequency, plus or minus a mixing frequency to provide a signal output. A gate of the FET and/or the drain and/or the source receives the useful signal to generate a gate-source voltage and/or a drain-source voltage whereby the gate receives the local oscillator signal to generate a gate-source voltage, and the drain or a source receives the local oscillator signal to generate a drain-source voltage. A phase shift is introduced between the signal received at the gate and the signal received at the drain or source of the FET.
摘要翻译：子谐波电子混合器具有至少一个具有栅极，源极和漏极的场效应晶体管（FET）; 并在有用的频率输入有用的信号; 和本地振荡器输入。该输入以与有用频率成正比的频率接收振荡器信号，加或减一个混频以提供信号输出。 FET和/或漏极和/或源极的栅极接收有用信号以产生栅极 - 源极电压和/或漏极 - 源极电压，由此栅极接收本地振荡器信号以产生栅极 - 源极电压，并且漏极或源接收本地振荡器信号以产生漏极 - 源极电压。在栅极接收的信号和在FET的漏极或源极处接收的信号之间引入相移。

3. 发明授权

US08547158B2 Distributive resistive mixer 失效
标题翻译：分布式电阻混频器
公开(公告)号：US08547158B2
公开(公告)日：2013-10-01
申请号：US13063001
申请日：2009-08-28
申请人： Ullrich Pfeiffer , Erik Oejefors , Hartmut G. Roskos , Alvydas Lisauskas
发明人： Ullrich Pfeiffer , Erik Oejefors , Hartmut G. Roskos , Alvydas Lisauskas
IPC分类号： G06G7/12
CPC分类号： H03D7/125 , H03D1/18 , H03D9/0675 , H03D2200/0074
摘要： The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies. For this purpose, the resistive mixer comprises a line which has a first and a second electrical conductor having respective connecting contacts so that an electrical high frequency signal can be coupled into the line, the first conductor having a plurality of series-connected voltage-dependent resistor elements (R) and at least one capacitive element (C) being interposed between the first and the second conductor.
摘要翻译：本发明涉及包含用于检测电磁高频信号VRF的功率的场效应晶体管的装置。根据现有技术，高频信号通过电容器CGD耦合到栅极G中，并且通过电容器CGD耦合到场效应晶体管FET的漏极D中，栅极G被直接电压Vg偏置，直流电压Vg对应于 FET晶体管。源S处的结果电流包含与高频信号幅度的平方成比例的直流电流部分Ids。所述功率检测器的工作频率通过离散布置限制在几千兆赫兹（GHz），特别是场效应晶体管的预定栅极长度。本发明的目的是改进电阻式混频器，使得它可以在高千兆赫兹和太赫兹频率下工作。为此，电阻式混合器包括具有第一和第二电导体的线，其具有相应的连接触点，使得电气高频信号可以耦合到线路中，第一导体具有多个串联连接的电压依赖性电阻元件（R）和至少一个电容元件（C）插入在第一和第二导体之间。

4. 发明申请

US20110254610A1 Distributive Resistive Mixer 失效
标题翻译：分布式电阻式搅拌机
公开(公告)号：US20110254610A1
公开(公告)日：2011-10-20
申请号：US13063001
申请日：2009-08-28
申请人： Ullrich Pfeiffer , Erik Oejefors , Hartmut G. Roskos , Alvydas Lisauskas
发明人： Ullrich Pfeiffer , Erik Oejefors , Hartmut G. Roskos , Alvydas Lisauskas
IPC分类号： G06G7/16
CPC分类号： H03D7/125 , H03D1/18 , H03D9/0675 , H03D2200/0074
摘要： The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies. For this purpose, the resistive mixer comprises a line which has a first and a second electrical conductor having respective connecting contacts so that an electrical high frequency signal can be coupled into the line, the first conductor having a plurality of series-connected voltage-dependent resistor elements (R) and at least one capacitive element (C) being interposed between the first and the second conductor.
摘要翻译：本发明涉及包含用于检测电磁高频信号VRF的功率的场效应晶体管的装置。根据现有技术，高频信号通过电容器CGD耦合到栅极G中，并且通过电容器CGD耦合到场效应晶体管FET的漏极D中，栅极G被直接电压Vg偏置，直流电压Vg对应于 FET晶体管。源S处的结果电流包含与高频信号幅度的平方成比例的直流电流部分Ids。所述功率检测器的工作频率通过离散布置限制在几千兆赫兹（GHz），特别是场效应晶体管的预定栅极长度。本发明的目的是改进电阻式混频器，使得它可以在高千兆赫兹和太赫兹频率下工作。为此，电阻式混合器包括具有第一和第二电导体的线，其具有相应的连接触点，使得电气高频信号可以耦合到线路中，第一导体具有多个串联连接的电压依赖性电阻元件（R）和至少一个电容元件（C）插入在第一和第二导体之间。

5. 发明申请

US20140091376A1 Monolithically Integrated Antenna and Receiver Circuit 有权
标题翻译：单片集成天线和接收机电路
公开(公告)号：US20140091376A1
公开(公告)日：2014-04-03
申请号：US14122897
申请日：2012-05-31
申请人： Sebastian Boppel , Alvydas Lisauskas , Hartmut Roskos , Viktor Krozer
发明人： Sebastian Boppel , Alvydas Lisauskas , Hartmut Roskos , Viktor Krozer
IPC分类号： H01L27/146
CPC分类号： H01L27/14601 , H01L31/101 , H01L31/112
摘要： The invention relates to a device for detecting electromagnetic radiation in the THz frequency range, comprising at least one transistor (FET1, FET2), which has a first electrode, a second electrode, a control electrode, and a channel between the first electrode and the second electrode, and comprising an antenna structure. An electrode is connected to the antenna structure such that an electromagnetic signal which lies in the THz-frequency range and which is received by the antenna structure (1) can be fed into the channel between electrodes and the control electrode is connected to an electrode via a capacitor and/or the control electrode and the first electrode or the control electrode and the second electrode have an intrinsic capacitor such that no AC voltage drop occurs between the control electrode and the first electrode or the second electrode.
摘要翻译：本发明涉及一种用于检测太赫兹频率范围内的电磁辐射的装置，包括至少一个晶体管（FET1，FET2），其具有第一电极，第二电极，控制电极和第一电极与第二电极之间的通道第二电极，并且包括天线结构。电极连接到天线结构，使得位于太赫兹频率范围内且由天线结构（1）接收的电磁信号可以馈送到电极之间的通道中，并且控制电极通过电容器和/或控制电极以及第一电极或控制电极和第二电极具有本征电容器，使得控制电极和第一电极或第二电极之间不会发生交流电压降。

6. 发明授权

US09508764B2 Monolithically integrated antenna and receiver circuit 有权
标题翻译：单片集成天线和接收器电路
公开(公告)号：US09508764B2
公开(公告)日：2016-11-29
申请号：US14122897
申请日：2012-05-31
申请人： Sebastian Boppel , Alvydas Lisauskas , Hartmut Roskos , Viktor Krozer
发明人： Sebastian Boppel , Alvydas Lisauskas , Hartmut Roskos , Viktor Krozer
IPC分类号： H01L27/146 , H01L31/101 , H01L31/112
CPC分类号： H01L27/14601 , H01L31/101 , H01L31/112
摘要： The invention relates to a device for detecting electromagnetic radiation in the THz frequency range, comprising at least one transistor (FET1, FET2), which has a first electrode, a second electrode, a control electrode, and a channel between the first electrode and the second electrode, and comprising an antenna structure. An electrode is connected to the antenna structure such that an electromagnetic signal which lies in the THz-frequency range and which is received by the antenna structure (1) can be fed into the channel between electrodes and the control electrode is connected to an electrode via a capacitor and/or the control electrode and the first electrode or the control electrode and the second electrode have an intrinsic capacitor such that no AC voltage drop occurs between the control electrode and the first electrode or the second electrode.
摘要翻译：本发明涉及一种用于检测太赫兹频率范围内的电磁辐射的装置，包括至少一个晶体管（FET1，FET2），其具有第一电极，第二电极，控制电极和第一电极与第二电极之间的通道第二电极，并且包括天线结构。电极连接到天线结构，使得位于太赫兹频率范围内且由天线结构（1）接收的电磁信号可以馈送到电极之间的通道中，并且控制电极通过电容器和/或控制电极以及第一电极或控制电极和第二电极具有本征电容器，使得控制电极和第一电极或第二电极之间不会发生交流电压降。

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