专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5861058A Composite structure and method for the production thereof 失效
标题翻译：复合结构及其制造方法
公开(公告)号：US5861058A
公开(公告)日：1999-01-19
申请号：US635513
申请日：1996-04-22
申请人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit , Mona Ferguson , Reiner Schaub , Karl-Heinrich Greeb
发明人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit , Mona Ferguson , Reiner Schaub , Karl-Heinrich Greeb
IPC分类号： C30B29/04 , C30B29/06 , H01J17/49 , H01J19/24 , H01J29/04 , H01J31/12 , H01L21/20 , H01L21/314 , C30B29/02
CPC分类号： H01J31/123 , H01J17/49 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L2924/0002 , Y10S117/913
摘要： A composite structure for electronic components, having a base substrate with a flat side provided with a depression, and having a cover layer which is disposed on the flat side structured by the depression, and the depression being covered to form a hollow structure. The depression in the base substrate is created prior to the deposition of the cover layer and has a clear width measured parallel to the flat side that is less than one-half of its clear depth measured before the cover layer is applied. The vapor phase deposited cover layer is formed from a material which has a sufficiently high surface tension to promote three-dimensional growth of the vapor phase deposited layer.
摘要翻译：一种电子部件用复合结构体，其具有设置有凹部的平坦面的基底基板，并且具有设置在由所述凹部构成的平坦侧的覆盖层，并且所述凹部被覆盖以形成中空结构。基底基板的凹陷是在沉积覆盖层之前产生的，并且具有平行于平坦侧测量的清晰宽度小于在涂覆覆盖层之前测量的其清晰深度的一半。气相沉积覆盖层由具有足够高的表面张力的材料形成，以促进气相沉积层的三维生长。

2. 发明授权

US5737186A Arrangement of plural micro-cooling devices with electronic components 失效
标题翻译：具有电子部件的多个微型冷却装置的布置
公开(公告)号：US5737186A
公开(公告)日：1998-04-07
申请号：US639102
申请日：1996-04-22
申请人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit
发明人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit
IPC分类号： F28F3/12 , H01C1/082 , H01L23/473 , H05K7/20
CPC分类号： H01C1/082 , F28F3/12 , H01L23/473 , H01L2924/0002
摘要： An arrangement of a plurality of microcooling devices provided with electrical components, each microcooling device having a closed channel structure for a coolant to flow through, and being provided with electrical conductors for the electronic components and with externally carried fluid ducts for a coolant which flows through the channel structures. A covering layer which forms one of at least two flat sides of the microcooling device is made from an electrically insulating material with good heat conductivity. The electronic components are arrayed on this cover layer and on the opposite flat side of each microcooling device. Adjacent microcooling devices which are provided with electronic components on confronting flat sides are arranged with their components spaced apart or staggered with respect to one another, and the components of one microcooling device preferably are in contact with the cover layer of the adjacent microcooling device.
摘要翻译：设置有多个具有电气部件的微冷却装置的布置，每个微冷装置具有用于冷却剂流过的封闭通道结构，并且设置有用于电子部件的电导体和用于流过冷却剂的外部承载流体管道渠道结构。形成微冷装置的至少两个平坦侧面之一的覆盖层由具有良好导热性的电绝缘材料制成。电子部件排列在该覆盖层上并且排列在每个显微冷却装置的相对的平坦侧上。在相对的平坦侧面上设置有电子部件的相邻的微冷装置被布置成其部件相对于彼此分开或交错，并且一个微冷装置的部件优选地与相邻的微冷装置的覆盖层接触。

3. 发明授权

US6101715A Microcooling device and method of making it 失效
标题翻译：微冷装置及其制作方法
公开(公告)号：US6101715A
公开(公告)日：2000-08-15
申请号：US16312
申请日：1998-01-30
申请人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit
发明人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit
IPC分类号： H05K7/20 , H01C1/082 , H01L23/473 , B23P15/26
CPC分类号： H01C1/082 , H01L23/473 , F28F13/18 , F28F3/12 , H01L2924/0002 , Y10T29/4935
摘要： A microcooling device and a method for its manufacture. The microcooling device has a high heat conductivity, is designed to accommodate electronic components on its exterior surface, and has a channel structure in its interior through which a coolant fluid can flow to carry heat away from the components. The channel structure is formed by a base substrate provided with a plurality of recesses and a cover layer externally covering the recesses, the cover layer being made from an electrically insulating and heat-conducting material, and being such that the electronic components can be mounted directly thereon.
摘要翻译：一种微冷装置及其制造方法。该微型冷却装置具有高导热性，被设计成在其外表面上容纳电子部件，并且在其内部具有通道结构，冷却剂流体可以通过该结构将流体从部件运送。通道结构由设置有多个凹部的基底基板和从外部覆盖凹部的覆盖层形成，覆盖层由电绝缘导热材料制成，并且使得电子部件可以直接安装上。

4. 发明授权

US5744825A Composite structure for an electronic component comprising a growth substrate, a diamond layer, and an intermediate layer therebetween 失效
标题翻译：用于电子部件的复合结构，包括生长衬底，金刚石层和它们之间的中间层
公开(公告)号：US5744825A
公开(公告)日：1998-04-28
申请号：US594038
申请日：1996-01-30
申请人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
发明人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
IPC分类号： C30B25/18 , H01L21/20 , H01L29/16 , H01L29/267 , H01L31/0312 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： H01L29/16 , C30B25/18 , H01L21/02381 , H01L21/02439 , H01L21/02447 , H01L21/02505 , H01L21/0251 , H01L21/02527 , H01L21/0262 , H01L21/02631 , H01L29/1602 , Y10S438/938
摘要： The invention relates to a composite structure for electronic components comprising a growth substrate, an intermediate layer having substantially a crystallographic lattice structure arranged on the growth substrate, and a diamond layer applied on top of the intermediate layer, and to a process for producing a composite structure of this type. In order to obtain a diamond layer of highest quality, the intermediate layer has substantially a zinc blende or diamond or a calcium fluoride structure, in which at the outset of the intermediate layer the difference between the lattice constant of the intermediate layer and the lattice constant of the growth substrate, relative to the lattice constant of the growth substrate, is less than 20%, in particular less than 10%, and in which at the transition from the intermediate layer to the diamond layer for the lattice constant of the intermediate layer and the lattice constant of the diamond layer the value of the expression .vertline.(n*a.sub.ZS -m*a.sub.D).vertline./n*a.sub.ZS is less than 0.2, in particular less than 0.1, wherein n and m are natural numbers, a.sub.D is the lattice constant of the diamond layer, and a.sub.ZS is the lattice constant of the intermediate layer at the transition to the diamond layer.
摘要翻译：本发明涉及一种用于电子部件的复合结构体，其包括生长衬底，具有布置在生长衬底上的基本上晶格结构的中间层和施加在中间层顶部上的金刚石层，以及用于制备复合材料的方法这种结构。为获得最高质量的金刚石层，中间层基本上具有闪锌矿或金刚石或氟化钙结构，其中在中间层的一开始，中间层的晶格常数与晶格常数之间的差异的生长衬底相对于生长衬底的晶格常数小于20％，特别是小于10％，并且其中在从中间层到金刚石层的中间层的晶格常数的转变并且金刚石层的晶格常数表达式|（n * aZS-m * aD）| / n * aZS的值小于0.2，特别是小于0.1，其中n和m是自然数，a是晶格金刚石层的常数，aZS是过渡到金刚石层的中间层的晶格常数。

5. 发明授权

US5656828A Electronic component with a semiconductor composite structure 失效
标题翻译：具有半导体复合结构的电子部件
公开(公告)号：US5656828A
公开(公告)日：1997-08-12
申请号：US432859
申请日：1995-05-02
申请人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
发明人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
IPC分类号： C30B25/18 , H01L21/20 , H01L29/16 , H01L29/267 , H01L33/00 , H01L33/26
CPC分类号： H01L33/26 , C30B25/18 , H01L21/02381 , H01L21/02395 , H01L21/02447 , H01L21/02455 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/02527 , H01L29/16 , H01L29/1602 , H01L29/267 , H01L33/002 , Y10T428/30 , Y10T428/31678
摘要： The invention relates to a semiconductor composite structure for an electronic component. The semiconductor composite structure comprises a diamond layer, which is substantially undoped except for unavoidable impurities, one side of which is covered by a doped diamond-free semiconductor layer, with the layers being arranged on a growth substrate. The discontinuity which exists at the transition between the semiconductor layer and the diamond layer with respect to the conduction band and/or the valence band, is such that in the semiconductor layer charge carriers, which are excited optically and/or thermally, can be conducted in the valence band and/or conduction band of the undoped diamond layer with a decrease in their potential energy.
摘要翻译：本发明涉及一种用于电子元件的半导体复合结构。半导体复合结构包括金刚石层，除了不可避免的杂质之外，其基本上未掺杂，其一侧被掺杂的无金刚石半导体层覆盖，其中层布置在生长衬底上。存在于半导体层和金刚石层之间相对于导带和/或价带的转变处的不连续性使得在半导体层中可以进行光学和/或热激发的电荷载流子在未掺杂的金刚石层的价带和/或导带中，其势能降低。

6. 发明授权

US5525537A Process of producing diamond composite structure for electronic components 失效
标题翻译：生产电子元器件金刚石复合结构的工艺
公开(公告)号：US5525537A
公开(公告)日：1996-06-11
申请号：US432853
申请日：1995-05-02
申请人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
发明人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
IPC分类号： C30B25/18 , H01L21/20 , H01L29/16 , H01L29/267 , C30B29/04
CPC分类号： H01L29/16 , C30B25/18 , H01L21/02381 , H01L21/02439 , H01L21/02447 , H01L21/02505 , H01L21/0251 , H01L21/02527 , H01L21/0262 , H01L21/02631 , H01L29/1602 , Y10S438/938
摘要： The invention relates to a composite structure for electronic components comprising a growth substrate, an intermediate layer having substantially a crystallographic lattice structure arranged on the growth substrate, and a diamond layer applied on top of the intermediate layer, and to a process for producing a composite structure of this type. In order to obtain a diamond layer of highest quality, the intermediate layer has substantially a zinc blende or diamond or a calcium fluoride structure, in which at the outset of the intermediate layer the difference between the lattice constant of the intermediate layer and the lattice constant of the growth substrate, relative to the lattice constant of the growth substrate, is less than 20%, in particular less than 10%, and in which at the transition from the intermediate layer to the diamond layer for the lattice constant of the intermediate layer and the lattice constant of the diamond layer the value of the expression.vertline.(n*a.sub.ZS -m*a.sub.D).vertline./n*a.sub.ZSis less than 0.2, in particular less than 0.1, whereinn and m are natural numbers,a.sub.D is the lattice constant of the diamond layer, anda.sub.ZS is the lattice constant of the intermediate layer at the transition to the diamond layer.
摘要翻译：本发明涉及一种用于电子部件的复合结构体，其包括生长衬底，具有布置在生长衬底上的基本上晶格结构的中间层和施加在中间层顶部上的金刚石层，以及用于制备复合材料的方法这种结构。为获得最高质量的金刚石层，中间层基本上具有闪锌矿或金刚石或氟化钙结构，其中在中间层的一开始，中间层的晶格常数与晶格常数之间的差异的生长衬底相对于生长衬底的晶格常数小于20％，特别是小于10％，并且其中在从中间层到金刚石层的中间层的晶格常数的转变并且金刚石层的晶格常数表达式|（n * aZS-m * aD）| / n * aZS的值小于0.2，特别是小于0.1，其中n和m是自然数，aD是金刚石层的晶格常数，aZS是过渡到金刚石层的中间层的晶格常数。

7. 发明授权

US06506451B1 Composite structure and process for producing it 失效
标题翻译：复合结构及其生产工艺
公开(公告)号：US06506451B1
公开(公告)日：2003-01-14
申请号：US08647318
申请日：1996-05-09
申请人： Frank Stubhan , Hans-Juergen Fuesser , Mona Ferguson
发明人： Frank Stubhan , Hans-Juergen Fuesser , Mona Ferguson
IPC分类号： C23C1626
CPC分类号： H01L21/02527 , C23C16/02 , C23C16/271 , C23C16/279 , H01L21/02444 , H01L21/02494 , H01L21/02516 , H01L21/0262 , H01L21/02658
摘要： A composite structure having a substantially monocrystalline growth substrate and at least one monocrystalline or polycrystalline layer of diamond or diamond-like material arranged on a surface of the growth substrate, the surface of the growth substrate being provided with crystal growth nuclei having crystal axes which exhibit an inclination of not more than 10%, preferably not more than 7%, with respect to corresponding axes of the crystal lattice of the growth substrate, and a process for producing such a composite structure in which the growth substrate is pretreated and growth nuclei are deposited from a nucleating gas phase of known composition for depositing layers of diamond or diamond-like material, in which during the nucleation the growth substrate is raised to a negative electrical potential relative to the nucleating gas phase.
摘要翻译：一种具有基本单晶生长衬底和布置在生长衬底的表面上的金刚石或类金刚石材料的至少一个单晶或多晶层的复合结构，所述生长衬底的表面设置有具有晶轴的晶体生长核，相对于生长基板的晶格的相应轴线的倾斜度不大于10％，优选不超过7％，以及用于制备其中预处理生长衬底和生长核的复合结构的方法从已知组合物的成核气相沉积，用于沉积金刚石或类金刚石材料层，其中在成核期间，生长衬底相对于成核气相升高至负电位。

8. 发明申请

US20050063835A1 Surface of the polygon or plunger foot plate of a pump 失效
标题翻译：泵的多边形或柱塞脚板的表面
公开(公告)号：US20050063835A1
公开(公告)日：2005-03-24
申请号：US10499899
申请日：2003-10-22
申请人： Ulrich Buettner , Hans-Juergen Fuesser , Volker Lagemann
发明人： Ulrich Buettner , Hans-Juergen Fuesser , Volker Lagemann
IPC分类号： F04B1/04 , F04B1/12 , F04B27/08
CPC分类号： F04B1/0413 , F04B1/0408
摘要： The invention relates to the surfaces of the polygon (2) and/or the plunger foot plate (3) of a high-pressure pump for a diesel motor, at least one of the surfaces having cavities at least in the contact area between the polygon (2) and the plunger foot plate (3). According to the invention the face of the plunger foot plate (3) lying opposite the polygon (2) is concave, at least in the load-free state and the cavities have a depth of between 5 and 50 μm, a width of between 30 and 100 μm and a length of at least 100 μm, or a diameter ranging between 30 and 100 μm. The edges of the cavities are rounded. The invention also relates to a method for producing said surfaces, according to which the cavities are first created in the surface by means of chemical etching, blasting using blasting agents or by means of a laser removal process, the surface is subsequently polished in a vibratory grinding process and the edges of the cavities are rounded.
摘要翻译：本发明涉及用于柴油发动机的高压泵的多边形（2）和/或柱塞底板（3）的表面，至少一个表面具有至少在多边形之间的接触区域中的空腔（2）和柱塞脚板（3）。根据本发明，与多边形（2）相对的柱塞脚板（3）的表面是凹形的，至少在无负载状态下，空腔的深度在5-50μm之间，宽度在30 100微米，长度至少为100微米，或直径范围在30至100微米之间。空腔的边缘是圆形的。本发明还涉及一种用于制造所述表面的方法，根据该方法，首先通过化学蚀刻，使用喷砂剂或通过激光去除工艺喷射来在表面中形成空腔，随后将该表面以振动研磨过程和空腔的边缘是圆形的。

9. 发明授权

US5817407A Organic layer for subsequent coating with a cover layer which is harder than the organic layer and process for surface treatment of an organic layer 失效
标题翻译：用于随后用有机层难以覆盖的覆盖层涂覆的有机层和用于表面处理有机层的方法
公开(公告)号：US5817407A
公开(公告)日：1998-10-06
申请号：US797557
申请日：1997-02-06
申请人： Hans-Juergen Fuesser , Karl Holdik , Klaus Rohwer , Martin Hartweg
发明人： Hans-Juergen Fuesser , Karl Holdik , Klaus Rohwer , Martin Hartweg
IPC分类号： B05D1/38 , B05D3/00 , B05D3/14 , B05D7/00 , B05D7/24 , C23C16/02 , B32B7/02
CPC分类号： B05D7/52 , B05D1/38 , B05D3/00 , B05D7/24 , B32B38/0008 , C23C16/02 , B05D3/141 , Y10T428/24942 , Y10T428/24983 , Y10T428/30
摘要： An organic layer for subsequent coating with a cover layer which is harder than the organic layer, and a process for surface treatment of the organic layer. In order to improve the quality of a subsequently applied cover layer, growth nuclei for the cover layer, which exhibit sp.sup.2 and/or sp.sup.3 bonding orbital hybridization, are arranged and/or exposed on the free surface of the organic layer.
摘要翻译：用于随后用有机层硬的覆盖层涂覆的有机层，以及有机层的表面处理方法。为了提高随后施加的覆盖层的质量，在有机层的自由表面上布置和/或暴露出表现sp2和/或sp3键合轨道杂交的覆盖层的生长核。

10. 发明授权

US5628920A Organic layer for subsequent coating with a cover layer which is harder than the organic layer and process for surface treatment of an organic layer 失效
标题翻译：用于随后用有机层难以覆盖的覆盖层涂覆的有机层和用于表面处理有机层的方法
公开(公告)号：US5628920A
公开(公告)日：1997-05-13
申请号：US499323
申请日：1995-07-07
申请人： Hans-Juergen Fuesser , Karl Holdik , Klaus Rohwer , Martin Hartweg
发明人： Hans-Juergen Fuesser , Karl Holdik , Klaus Rohwer , Martin Hartweg
IPC分类号： B05D1/38 , B05D3/00 , B05D3/14 , B05D7/00 , B05D7/24 , C23C16/02
CPC分类号： B05D7/52 , B05D1/38 , B05D3/00 , B05D7/24 , B32B38/0008 , C23C16/02 , B05D3/141 , Y10T428/24942 , Y10T428/24983 , Y10T428/30
摘要： An organic layer for subsequent coating with a cover layer which is harder than the organic layer, and a process for surface treatment of the organic layer. In order to improve the quality of a subsequently applied cover layer, growth nuclei for the cover layer, which exhibit sp.sup.2 and/or sp.sup.3 bonding orbital hybridization, are arranged and/or exposed on the free surface of the organic layer.
摘要翻译：用于随后用有机层硬的覆盖层涂覆的有机层，以及有机层的表面处理方法。为了提高随后施加的覆盖层的质量，在有机层的自由表面上布置和/或暴露出表现sp2和/或sp3键合轨道杂交的覆盖层的生长核。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式