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1. 发明授权

US5737186A Arrangement of plural micro-cooling devices with electronic components 失效
标题翻译：具有电子部件的多个微型冷却装置的布置
公开(公告)号：US5737186A
公开(公告)日：1998-04-07
申请号：US639102
申请日：1996-04-22
申请人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit
发明人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit
IPC分类号： F28F3/12 , H01C1/082 , H01L23/473 , H05K7/20
CPC分类号： H01C1/082 , F28F3/12 , H01L23/473 , H01L2924/0002
摘要： An arrangement of a plurality of microcooling devices provided with electrical components, each microcooling device having a closed channel structure for a coolant to flow through, and being provided with electrical conductors for the electronic components and with externally carried fluid ducts for a coolant which flows through the channel structures. A covering layer which forms one of at least two flat sides of the microcooling device is made from an electrically insulating material with good heat conductivity. The electronic components are arrayed on this cover layer and on the opposite flat side of each microcooling device. Adjacent microcooling devices which are provided with electronic components on confronting flat sides are arranged with their components spaced apart or staggered with respect to one another, and the components of one microcooling device preferably are in contact with the cover layer of the adjacent microcooling device.
摘要翻译：设置有多个具有电气部件的微冷却装置的布置，每个微冷装置具有用于冷却剂流过的封闭通道结构，并且设置有用于电子部件的电导体和用于流过冷却剂的外部承载流体管道渠道结构。形成微冷装置的至少两个平坦侧面之一的覆盖层由具有良好导热性的电绝缘材料制成。电子部件排列在该覆盖层上并且排列在每个显微冷却装置的相对的平坦侧上。在相对的平坦侧面上设置有电子部件的相邻的微冷装置被布置成其部件相对于彼此分开或交错，并且一个微冷装置的部件优选地与相邻的微冷装置的覆盖层接触。

2. 发明授权

US6101715A Microcooling device and method of making it 失效
标题翻译：微冷装置及其制作方法
公开(公告)号：US6101715A
公开(公告)日：2000-08-15
申请号：US16312
申请日：1998-01-30
申请人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit
发明人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit
IPC分类号： H05K7/20 , H01C1/082 , H01L23/473 , B23P15/26
CPC分类号： H01C1/082 , H01L23/473 , F28F13/18 , F28F3/12 , H01L2924/0002 , Y10T29/4935
摘要： A microcooling device and a method for its manufacture. The microcooling device has a high heat conductivity, is designed to accommodate electronic components on its exterior surface, and has a channel structure in its interior through which a coolant fluid can flow to carry heat away from the components. The channel structure is formed by a base substrate provided with a plurality of recesses and a cover layer externally covering the recesses, the cover layer being made from an electrically insulating and heat-conducting material, and being such that the electronic components can be mounted directly thereon.
摘要翻译：一种微冷装置及其制造方法。该微型冷却装置具有高导热性，被设计成在其外表面上容纳电子部件，并且在其内部具有通道结构，冷却剂流体可以通过该结构将流体从部件运送。通道结构由设置有多个凹部的基底基板和从外部覆盖凹部的覆盖层形成，覆盖层由电绝缘导热材料制成，并且使得电子部件可以直接安装上。

3. 发明授权

US5861058A Composite structure and method for the production thereof 失效
标题翻译：复合结构及其制造方法
公开(公告)号：US5861058A
公开(公告)日：1999-01-19
申请号：US635513
申请日：1996-04-22
申请人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit , Mona Ferguson , Reiner Schaub , Karl-Heinrich Greeb
发明人： Hans-Juergen Fuesser , Reinhard Zachai , Wolfram Muench , Tim Gutheit , Mona Ferguson , Reiner Schaub , Karl-Heinrich Greeb
IPC分类号： C30B29/04 , C30B29/06 , H01J17/49 , H01J19/24 , H01J29/04 , H01J31/12 , H01L21/20 , H01L21/314 , C30B29/02
CPC分类号： H01J31/123 , H01J17/49 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L2924/0002 , Y10S117/913
摘要： A composite structure for electronic components, having a base substrate with a flat side provided with a depression, and having a cover layer which is disposed on the flat side structured by the depression, and the depression being covered to form a hollow structure. The depression in the base substrate is created prior to the deposition of the cover layer and has a clear width measured parallel to the flat side that is less than one-half of its clear depth measured before the cover layer is applied. The vapor phase deposited cover layer is formed from a material which has a sufficiently high surface tension to promote three-dimensional growth of the vapor phase deposited layer.
摘要翻译：一种电子部件用复合结构体，其具有设置有凹部的平坦面的基底基板，并且具有设置在由所述凹部构成的平坦侧的覆盖层，并且所述凹部被覆盖以形成中空结构。基底基板的凹陷是在沉积覆盖层之前产生的，并且具有平行于平坦侧测量的清晰宽度小于在涂覆覆盖层之前测量的其清晰深度的一半。气相沉积覆盖层由具有足够高的表面张力的材料形成，以促进气相沉积层的三维生长。

4. 发明授权

US5744825A Composite structure for an electronic component comprising a growth substrate, a diamond layer, and an intermediate layer therebetween 失效
标题翻译：用于电子部件的复合结构，包括生长衬底，金刚石层和它们之间的中间层
公开(公告)号：US5744825A
公开(公告)日：1998-04-28
申请号：US594038
申请日：1996-01-30
申请人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
发明人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
IPC分类号： C30B25/18 , H01L21/20 , H01L29/16 , H01L29/267 , H01L31/0312 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： H01L29/16 , C30B25/18 , H01L21/02381 , H01L21/02439 , H01L21/02447 , H01L21/02505 , H01L21/0251 , H01L21/02527 , H01L21/0262 , H01L21/02631 , H01L29/1602 , Y10S438/938
摘要： The invention relates to a composite structure for electronic components comprising a growth substrate, an intermediate layer having substantially a crystallographic lattice structure arranged on the growth substrate, and a diamond layer applied on top of the intermediate layer, and to a process for producing a composite structure of this type. In order to obtain a diamond layer of highest quality, the intermediate layer has substantially a zinc blende or diamond or a calcium fluoride structure, in which at the outset of the intermediate layer the difference between the lattice constant of the intermediate layer and the lattice constant of the growth substrate, relative to the lattice constant of the growth substrate, is less than 20%, in particular less than 10%, and in which at the transition from the intermediate layer to the diamond layer for the lattice constant of the intermediate layer and the lattice constant of the diamond layer the value of the expression .vertline.(n*a.sub.ZS -m*a.sub.D).vertline./n*a.sub.ZS is less than 0.2, in particular less than 0.1, wherein n and m are natural numbers, a.sub.D is the lattice constant of the diamond layer, and a.sub.ZS is the lattice constant of the intermediate layer at the transition to the diamond layer.
摘要翻译：本发明涉及一种用于电子部件的复合结构体，其包括生长衬底，具有布置在生长衬底上的基本上晶格结构的中间层和施加在中间层顶部上的金刚石层，以及用于制备复合材料的方法这种结构。为获得最高质量的金刚石层，中间层基本上具有闪锌矿或金刚石或氟化钙结构，其中在中间层的一开始，中间层的晶格常数与晶格常数之间的差异的生长衬底相对于生长衬底的晶格常数小于20％，特别是小于10％，并且其中在从中间层到金刚石层的中间层的晶格常数的转变并且金刚石层的晶格常数表达式|（n * aZS-m * aD）| / n * aZS的值小于0.2，特别是小于0.1，其中n和m是自然数，a是晶格金刚石层的常数，aZS是过渡到金刚石层的中间层的晶格常数。

5. 发明授权

US5656828A Electronic component with a semiconductor composite structure 失效
标题翻译：具有半导体复合结构的电子部件
公开(公告)号：US5656828A
公开(公告)日：1997-08-12
申请号：US432859
申请日：1995-05-02
申请人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
发明人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
IPC分类号： C30B25/18 , H01L21/20 , H01L29/16 , H01L29/267 , H01L33/00 , H01L33/26
CPC分类号： H01L33/26 , C30B25/18 , H01L21/02381 , H01L21/02395 , H01L21/02447 , H01L21/02455 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/02527 , H01L29/16 , H01L29/1602 , H01L29/267 , H01L33/002 , Y10T428/30 , Y10T428/31678
摘要： The invention relates to a semiconductor composite structure for an electronic component. The semiconductor composite structure comprises a diamond layer, which is substantially undoped except for unavoidable impurities, one side of which is covered by a doped diamond-free semiconductor layer, with the layers being arranged on a growth substrate. The discontinuity which exists at the transition between the semiconductor layer and the diamond layer with respect to the conduction band and/or the valence band, is such that in the semiconductor layer charge carriers, which are excited optically and/or thermally, can be conducted in the valence band and/or conduction band of the undoped diamond layer with a decrease in their potential energy.
摘要翻译：本发明涉及一种用于电子元件的半导体复合结构。半导体复合结构包括金刚石层，除了不可避免的杂质之外，其基本上未掺杂，其一侧被掺杂的无金刚石半导体层覆盖，其中层布置在生长衬底上。存在于半导体层和金刚石层之间相对于导带和/或价带的转变处的不连续性使得在半导体层中可以进行光学和/或热激发的电荷载流子在未掺杂的金刚石层的价带和/或导带中，其势能降低。

6. 发明授权

US5525537A Process of producing diamond composite structure for electronic components 失效
标题翻译：生产电子元器件金刚石复合结构的工艺
公开(公告)号：US5525537A
公开(公告)日：1996-06-11
申请号：US432853
申请日：1995-05-02
申请人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
发明人： Reinhard Zachai , Hans-Juergen Fuesser , Tim Gutheit
IPC分类号： C30B25/18 , H01L21/20 , H01L29/16 , H01L29/267 , C30B29/04
CPC分类号： H01L29/16 , C30B25/18 , H01L21/02381 , H01L21/02439 , H01L21/02447 , H01L21/02505 , H01L21/0251 , H01L21/02527 , H01L21/0262 , H01L21/02631 , H01L29/1602 , Y10S438/938
摘要： The invention relates to a composite structure for electronic components comprising a growth substrate, an intermediate layer having substantially a crystallographic lattice structure arranged on the growth substrate, and a diamond layer applied on top of the intermediate layer, and to a process for producing a composite structure of this type. In order to obtain a diamond layer of highest quality, the intermediate layer has substantially a zinc blende or diamond or a calcium fluoride structure, in which at the outset of the intermediate layer the difference between the lattice constant of the intermediate layer and the lattice constant of the growth substrate, relative to the lattice constant of the growth substrate, is less than 20%, in particular less than 10%, and in which at the transition from the intermediate layer to the diamond layer for the lattice constant of the intermediate layer and the lattice constant of the diamond layer the value of the expression.vertline.(n*a.sub.ZS -m*a.sub.D).vertline./n*a.sub.ZSis less than 0.2, in particular less than 0.1, whereinn and m are natural numbers,a.sub.D is the lattice constant of the diamond layer, anda.sub.ZS is the lattice constant of the intermediate layer at the transition to the diamond layer.
摘要翻译：本发明涉及一种用于电子部件的复合结构体，其包括生长衬底，具有布置在生长衬底上的基本上晶格结构的中间层和施加在中间层顶部上的金刚石层，以及用于制备复合材料的方法这种结构。为获得最高质量的金刚石层，中间层基本上具有闪锌矿或金刚石或氟化钙结构，其中在中间层的一开始，中间层的晶格常数与晶格常数之间的差异的生长衬底相对于生长衬底的晶格常数小于20％，特别是小于10％，并且其中在从中间层到金刚石层的中间层的晶格常数的转变并且金刚石层的晶格常数表达式|（n * aZS-m * aD）| / n * aZS的值小于0.2，特别是小于0.1，其中n和m是自然数，aD是金刚石层的晶格常数，aZS是过渡到金刚石层的中间层的晶格常数。

7. 发明授权

US5843224A Composite structure comprising a semiconductor layer arranged on a diamond or diamond-like layer and process for its production 失效
标题翻译：复合结构包括布置在金刚石或类金刚石层上的半导体层及其生产方法
公开(公告)号：US5843224A
公开(公告)日：1998-12-01
申请号：US512080
申请日：1995-08-07
申请人： Reinhard Zachai , Tim Gutheit , Kenneth Goodson
发明人： Reinhard Zachai , Tim Gutheit , Kenneth Goodson
IPC分类号： C30B29/04 , C30B29/06 , H01L21/02 , H01L21/20
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/02444 , H01L21/02447 , H01L21/02502 , H01L21/0251 , H01L21/02639
摘要： The invention relates to a composite structure including a semiconductor layer arranged on a diamond layer and/or a diamond-like layer, for subsequent processing to produce electronic components and/or groups of components and to a process for producing such a composite structure. In order to improve the quality of the subsequent components, the diamond layer is deposited underneath the component source zones from which the components are subsequently produced, and the diamond or diamond-like layer is provided at the margins of the component source zones and/or outside of the component source zones with edges where the thickness of the layer changes abruptly such that the edges have an edge height amounting to at least 1O%, preferably at least 50%, of the layer thickness of the diamond layer. Imperfections such as dislocations or other discontinuities in the semiconductor layer tend to collect at these edges outside of the component source zones, thereby decreasing the density of discontinuities in the component source zones and improving the quality of electronic components produced of material from the component source zones.
摘要翻译：本发明涉及一种复合结构，其包括布置在金刚石层和/或类金刚石层上的半导体层，用于随后的生产电子部件和/或组件组的处理以及用于生产这种复合结构的方法。为了提高随后的组分的质量，将金刚石层沉积在组分源区域的下方，随后从其中产生组分，并且在组分源区域的边缘处提供金刚石或类金刚石层，和/或在具有边缘厚度的边缘的组分源区域外部突然变化，使得边缘具有相当于金刚石层的层厚度的至少10％，优选至少50％的边缘高度。在半导体层中的位错或其他不连续性的缺陷倾向于在这些边缘处收集在部件源区域外部，从而降低部件源区域中的不连续密度，并且提高从部件源区域产生的材料的电子部件的质量。

8. 发明授权

US5855954A Composite structure for manufacturing a microelectronic component and a process for manufacturing the composite structure 失效
标题翻译：用于制造微电子部件的复合结构和用于制造复合结构的方法
公开(公告)号：US5855954A
公开(公告)日：1999-01-05
申请号：US752263
申请日：1996-11-18
申请人： Tim Gutheit , Reinhard Zachai , Eckart Bottger
发明人： Tim Gutheit , Reinhard Zachai , Eckart Bottger
IPC分类号： H01L23/14 , H01L29/12
CPC分类号： H01L23/142 , H01L2924/0002
摘要： The invention provides a composite structure for microelectronic components having a self-supporting metal plate, an electrically insulating layer adhering to the metal plate, and a functional layer adhering to the insulating layer for the application of at least one microelectronic component. An at least largely monocrystalline information layer which covers the metal plate at points is applied to the self-supporting metal plate. The regions of the surface of the metal plate which are free of the information layer are provided with the insulating layer. When the surface of the information layer is exposed at least in regions, the functional layer is deposited on the insulating layer and on the exposed information layer. The crystal information required for an epitaxial deposition of the functional layer is taken from the information layer.
摘要翻译：本发明提供了一种用于具有自支撑金属板，粘附到金属板的电绝缘层和粘附到绝缘层以用于施加至少一个微电子部件的功能层的微电子部件的复合结构。将至少大部分在点处覆盖金属板的单晶信息层施加到自支撑金属板。没有信息层的金属板表面的区域设有绝缘层。当至少在区域中暴露信息层的表面时，功能层沉积在绝缘层和暴露的信息层上。功能层的外延沉积所需的晶体信息取自信息层。

9. 发明授权

US6054719A Composite structure of an electronic component 失效
标题翻译：电子元件的复合结构
公开(公告)号：US6054719A
公开(公告)日：2000-04-25
申请号：US639104
申请日：1996-04-22
申请人： Hans-Jurgen Fusser , Reinhard Zachai , Tim Gutheit
发明人： Hans-Jurgen Fusser , Reinhard Zachai , Tim Gutheit
IPC分类号： H01L21/04 , H01L29/16 , H01L29/267 , H01L29/06
CPC分类号： H01L29/1602 , H01L21/0405 , H01L29/16 , H01L29/267
摘要： The invention relates to a composite structure for an electronic component with an undoped diamond layer, at least one side of which is covered by a doped non-diamond layer, arranged on a growth substrate. The diamond layer has a thickness of less than 0.5 .mu.m. In addition, the conduction and/or valence bands of the diamond layer and the nondiamond layer exhibit such a band discontinuity that charge carries from the doped non-diamond layer which are excited optically and/or thermally, for example, can be drawn, with a reduction of their potential energy, into the valence and/or conduction band of the undoped diamond layer. This configuration causes a potential well to exist in the area of the diamond layer, at least in one direction, with a quantizing effect for the charge carriers drawn into the diamond layer.
摘要翻译：本发明涉及一种具有未掺杂金刚石层的电子部件的复合结构，该金刚石层的至少一侧由掺杂的非金刚石层覆盖，布置在生长衬底上。金刚石层的厚度小于0.5μm。此外，金刚石层和非金刚石层的导电带和/或价带表现出这样的带状不连续性，即电荷从掺杂的非金刚石层进行光学和/或热激发，例如可以用将它们的势能降低到未掺杂的金刚石层的价态和/或导带。这种配置使得在金刚石层的区域中至少在一个方向上存在潜在的阱，并且对于载入金刚石层的电荷载流子具有量化效应。

10. 发明授权

US06262457B1 Method of producing a transistor structure 失效
标题翻译：晶体管结构的制造方法
公开(公告)号：US06262457B1
公开(公告)日：2001-07-17
申请号：US09038638
申请日：1998-03-10
申请人： Matthias Stecher , Tim Gutheit , Werner Schwetlick
发明人： Matthias Stecher , Tim Gutheit , Werner Schwetlick
IPC分类号： H01L718232
CPC分类号： H01L21/74 , H01L21/823493 , H01L29/1079
摘要： Additional degrees of freedom are provided for optimizing the component properties by combining two doping profiles. The threshold voltage of NMOS or DMOS transistors can be set through the process parameters involved in the introduction and outward diffusion of the further dopant of the second conductivity type, independently of the deep concentration, since the dopant concentration at the surface can be chosen independently of the dopant concentration at depth. A low film resistance results from the great penetration depth of the semiconductor region through the combination of the two dopant profiles. The low film resistance leads to reduced pinching of the substrate current in an NMOS transistor, and to greater stability against “latch-up”, without substantially increasing the concentration of the dopants in the region of source/drain diffusions, and therefore without unfavorably affecting drain/bulk capacitance. In addition, the concentration of the further dopant of the second conductivity type can be kept low. A semiconductor region of a second conductivity type is thus attained which exhibits little outward lateral diffusion. Further, when the components are given the conventional polarity, the semiconductor region is insulated from the p-substrate by the buried zone.
摘要翻译：提供了额外的自由度，用于通过组合两个掺杂分布来优化组件特性。 NMOS或DMOS晶体管的阈值电压可以通过与第二导电类型的另外的掺杂剂的引入和向外扩散相关的工艺参数来设置，与深度浓度无关，因为表面上的掺杂剂浓度可独立于掺杂浓度在深度。通过两种掺杂剂轮廓的组合，半导体区域的穿透深度很大导致低电阻。低电阻电阻导致NMOS晶体管中衬底电流的压缩减少，并且对于“闭锁”而言具有更大的稳定性，而基本上不增加源极/漏极扩散区域中的掺杂剂的浓度，因此不会不利地影响漏极/体电容。此外，第二导电类型的另外的掺杂剂的浓度可以保持较低。从而获得第二导电类型的半导体区域，其表现出很小的向外侧向扩散。此外，当组件被赋予常规极性时，半导体区域通过掩埋区与p衬底绝缘。

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