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    • 7. 发明授权
    • Bulk acoustic wave resonator and circuit comprising same
    • 体声波谐振器和包括其的电路
    • US07616079B2
    • 2009-11-10
    • US10530507
    • 2003-09-18
    • Pasi TikkaRalph StömmerEdgar SchmidhammerMichael Unterberger
    • Pasi TikkaRalph StömmerEdgar SchmidhammerMichael Unterberger
    • H03H9/205H03H9/54
    • H03H9/583
    • The invention relates to a resonator operating with bulk acoustic waves (BAW resonator, BAW=Bulk Acoustic Wave) and band-pass filters constructed of such resonators. To increase the edge steepness of the transmission band of a BAW band-pass filter, the invention proposes reducing the effective coupling of a BAW resonator by using the connection in parallel of a BAW resonator and a capacitor instead of only one resonator. In addition, to increase the edge steepness of the transmission band, the use of a connection of coupled BAW resonators in the serial branch of a filter circuit with another resonator or resonator stack in the parallel branch of the filter circuit is proposed, the additional resonator or resonator stack being connected to the center electrode of the resonator stack specified initially.
    • 本发明涉及一种使用体声波(BAW谐振器,BAW =体声波)和由这种谐振器构成的带通滤波器的谐振器。 为了增加BAW带通滤波器的传输频带的边缘陡度,本发明通过使用与BAW谐振器和电容器并联的连接而不是只有一个谐振器来降低BAW谐振器的有效耦合。 此外,为了增加传输频带的边缘陡度,提出了在滤波器电路的并联支路中使用与滤波器电路的串行分支中的另一谐振器或谐振器堆叠的耦合的BAW谐振器的连接,附加谐振器 或谐振器堆叠连接到最初指定的谐振器叠层的中心电极。
    • 9. 发明授权
    • Method and system for wafer-level tuning of bulk acoustic wave resonators and filters
    • 用于体声波谐振器和滤波器的晶片级调谐的方法和系统
    • US06456173B1
    • 2002-09-24
    • US09784634
    • 2001-02-15
    • Juha ElläPasi TikkaJyrki Kaitila
    • Juha ElläPasi TikkaJyrki Kaitila
    • H03H915
    • H03H3/04H03H2003/0428H03H2003/0435H03H2003/0478Y10T29/42
    • A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the device thickness. In particular, the device thickness has a non-uniformity profile across the device surface. A mask with an aperture is placed over the device surface and a particle beam is applied over the mask to allow part of the particle beam to make contact with the device surface at a localized area beneath the aperture. The particles that pass through the aperture are deposited on the device surface to add material on the device surface, thereby increasing the surface thickness to correct for thickness non-uniformity. Alternatively, the particles that pass through the aperture remove part of the device surface in an etching process, thereby reducing the surface thickness. Prior to thickness adjustment, a frequency measurement device or thickness measurement device is used to map the device surface for obtaining the non-uniformity profile.
    • 一种通过调节器件厚度来调整晶片级的体声波器件的方法和系统。 特别地,器件厚度在器件表面上具有不均匀性。 具有孔径的掩模放置在器件表面上,并且将粒子束施加在掩模上以允许部分粒子束在孔下方的局部区域处与器件表面接触。 通过孔的颗粒沉积在器件表面上以在器件表面上添加材料,从而增加表面厚度以校正厚度不均匀性。 或者,通过孔的颗粒在蚀刻工艺中去除部件的表面,从而降低表面厚度。 在厚度调整之前,使用频率测量装置或厚度测量装置来映射装置表面以获得不均匀性。