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1. 发明授权

US06456173B1 Method and system for wafer-level tuning of bulk acoustic wave resonators and filters 失效
标题翻译：用于体声波谐振器和滤波器的晶片级调谐的方法和系统
公开(公告)号：US06456173B1
公开(公告)日：2002-09-24
申请号：US09784634
申请日：2001-02-15
申请人： Juha Ellä , Pasi Tikka , Jyrki Kaitila
发明人： Juha Ellä , Pasi Tikka , Jyrki Kaitila
IPC分类号： H03H915
CPC分类号： H03H3/04 , H03H2003/0428 , H03H2003/0435 , H03H2003/0478 , Y10T29/42
摘要： A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the device thickness. In particular, the device thickness has a non-uniformity profile across the device surface. A mask with an aperture is placed over the device surface and a particle beam is applied over the mask to allow part of the particle beam to make contact with the device surface at a localized area beneath the aperture. The particles that pass through the aperture are deposited on the device surface to add material on the device surface, thereby increasing the surface thickness to correct for thickness non-uniformity. Alternatively, the particles that pass through the aperture remove part of the device surface in an etching process, thereby reducing the surface thickness. Prior to thickness adjustment, a frequency measurement device or thickness measurement device is used to map the device surface for obtaining the non-uniformity profile.
摘要翻译：一种通过调节器件厚度来调整晶片级的体声波器件的方法和系统。特别地，器件厚度在器件表面上具有不均匀性。具有孔径的掩模放置在器件表面上，并且将粒子束施加在掩模上以允许部分粒子束在孔下方的局部区域处与器件表面接触。通过孔的颗粒沉积在器件表面上以在器件表面上添加材料，从而增加表面厚度以校正厚度不均匀性。或者，通过孔的颗粒在蚀刻工艺中去除部件的表面，从而降低表面厚度。在厚度调整之前，使用频率测量装置或厚度测量装置来映射装置表面以获得不均匀性。

2. 发明授权

US06407649B1 Monolithic FBAR duplexer and method of making the same 有权
标题翻译：单片FBAR双工器及其制作方法
公开(公告)号：US06407649B1
公开(公告)日：2002-06-18
申请号：US09755954
申请日：2001-01-05
申请人： Pasi Tikka , Juha Ellä , Jyrki Kaitila
发明人： Pasi Tikka , Juha Ellä , Jyrki Kaitila
IPC分类号： H03H956
CPC分类号： H03H9/706 , H03H9/0571 , Y10T29/42
摘要： A monolithic bulk acoustic wave (BAW) duplexer, and a method for fabricating same, the duplexer having a, transmitter section as a first component filter and a receiver section as a second component filter, both component filters fabricated on a single substrate and both including at least one shunt BAW resonator and one series BAW resonator, each BAW resonator including a resonator section atop an isolation structure provided so as to separate the resonator section from the substrate, including: a patterned bottom electrode material for use as the bottom electrode of each of the resonators of the duplexer; a patterned piezoelectric material for use as the piezolayer of each of the resonators of the duplexer; a patterned top electrode material for use as the top electrode of each of the resonators of the duplexer; a tuning layer for the shunt resonator of each of the two component duplexer filters; and a tuning layer for both the series and shunt resonators of one of the two component duplexer filters. In some applications, each isolation structure is an acoustic mirror. Also in some applications, the duplexer further includes at least one planar spiral inductor provided in the course of depositing one or another layer of material in building up the duplexer, the planar spiral inductor having coils spiraling outward substantially in a plane from an innermost coil to an outermost coil.
摘要翻译：单片体声波（BAW）双工器及其制造方法，具有作为第一分量滤波器的发射机部分和作为第二分量滤波器的接收机部分的双工器，在单个基板上制造的两个部件滤波器，至少一个并联BAW谐振器和一个串联BAW谐振器，每个BAW谐振器包括设置成将谐振器部分与衬底分离的隔离结构顶部的谐振器部分，包括：用作每个的底部电极的图案化底部电极材料的双工器谐振器; 用作双工器的每个谐振器的压电层的图案化压电材料; 用作双工器的每个谐振器的顶电极的图案化顶电极材料; 用于两个组件双工器滤波器中的每一个的并联谐振器的调谐层; 以及用于两个组件双工器滤波器之一的串联和并联谐振器的调谐层。在一些应用中，每个隔离结构都是声反射镜。同样在一些应用中，双工器还包括至少一个平面螺旋电感器，该平面螺旋电感器设置在堆积双层器中的一个或另一个材料层的过程中，平面螺旋电感器具有基本上在从最内侧的线圈到最外面的线圈。

3. 发明授权

US06480074B1 Method and system for wafer-level tuning of bulk acoustic wave resonators and filters by reducing thickness non-uniformity 失效
标题翻译：通过减小厚度不均匀性对体声波谐振器和滤波器进行晶片级调谐的方法和系统
公开(公告)号：US06480074B1
公开(公告)日：2002-11-12
申请号：US09845096
申请日：2001-04-27
申请人： Jyrki Kaitila , Pasi Tikka , Juha Ellä
发明人： Jyrki Kaitila , Pasi Tikka , Juha Ellä
IPC分类号： H03H302
CPC分类号： H03H3/013 , Y10T29/42
摘要： A method and system for tuning a bulk acoustic wave device at wafer level by reducing the thickness non-uniformity of the topmost surface of the device using a chemical vapor deposition process. A light beam is used to enhance the deposition of material on the topmost surface at one local location at a time. Alternatively, an electrode is used to produce plasma for locally enhancing the vapor deposition process. A moving mechanism is used to move the light beam or the electrode to different locations for reducing the thickness non-uniformity until the resonance frequency of the device falls within specification.
摘要翻译：一种用于通过使用化学气相沉积工艺减小器件的最上表面的厚度不均匀性来调整晶片级的体声波器件的方法和系统。光束用于一次在一个本地位置增强材料在最上表面上的沉积。或者，使用电极来产生用于局部增强气相沉积工艺的等离子体。移动机构用于将光束或电极移动到不同的位置，以减小厚度不均匀，直到器件的谐振频率落在规格内。

4. 发明授权

US06462460B1 Method and system for wafer-level tuning of bulk acoustic wave resonators and filters 失效
标题翻译：用于体声波谐振器和滤波器的晶片级调谐的方法和系统
公开(公告)号：US06462460B1
公开(公告)日：2002-10-08
申请号：US09844218
申请日：2001-04-27
申请人： Pasi Tikka , Juha Ellä , Jyrki Kaitila
发明人： Pasi Tikka , Juha Ellä , Jyrki Kaitila
IPC分类号： H01L4108
CPC分类号： H03H3/013 , H03H3/04
摘要： A method and system for tuning a bulk acoustic wave device at wafer level, wherein the thickness of topmost layer of the device is non-uniform. The thickness non-uniformity causes the resonant frequency of the device to vary from one location to another location of the topmost layer. A laser beam, operatively connected to a beam moving mechanism, is used to locally trim the topmost layer, one location at a time.
摘要翻译：一种用于在晶片级调谐体声波器件的方法和系统，其中该器件的最上层的厚度是不均匀的。厚度不均匀导致器件的谐振频率从最高层的一个位置到另一个位置变化。可操作地连接到光束移动机构的激光束用于一次一个位置的最顶层的局部修整。

5. 发明授权

US06441702B1 Method and system for wafer-level tuning of bulk acoustic wave resonators and filters 失效
标题翻译：用于体声波谐振器和滤波器的晶片级调谐的方法和系统
公开(公告)号：US06441702B1
公开(公告)日：2002-08-27
申请号：US09844264
申请日：2001-04-27
申请人： Juha Ellä , Pasi Tikka , Jyrki Kaitila
发明人： Juha Ellä , Pasi Tikka , Jyrki Kaitila
IPC分类号： H03H302
CPC分类号： H03H3/04 , H03H2003/0414 , H03H2003/0478 , Y10T29/42
摘要： A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the thickness of the device. In particular, the thickness of the device has a non-uniformity profile across the device surface. A mask having a thickness non-uniformity profile based partly on the thickness non-uniformity profile of the device surface is provided on the device surface for etching. A dry etching method is used to remove part of the mask to expose the underlying device surface and further removed the exposed device surface until the thickness non-uniformity of the device surface falls within tolerance of the device.
摘要翻译：一种用于通过调节器件的厚度来调整晶片级的体声波器件的方法和系统。特别地，装置的厚度在装置表面上具有不均匀性。在器件表面上设置具有基于器件表面的厚度不均匀轮廓的厚度不均匀轮廓的掩模，用于蚀刻。使用干蚀刻方法去除部分掩模以暴露下面的器件表面，并进一步去除暴露的器件表面，直到器件表面的厚度不均匀性落在器件的容限内。

6. 发明授权

US06548943B2 Method of producing thin-film bulk acoustic wave devices 有权
标题翻译：制造薄膜体声波器件的方法
公开(公告)号：US06548943B2
公开(公告)日：2003-04-15
申请号：US09833804
申请日：2001-04-12
申请人： Jyrki Kaitila , Juha Ellä
发明人： Jyrki Kaitila , Juha Ellä
IPC分类号： H01L4104
CPC分类号： H03H3/02
摘要： A method of producing a BAW device with reduced spurious resonance, wherein the device comprises a top electrode, a bottom electrode and a piezoelectric layer therebetween. A frame-like structure is formed on top of the top electrode for suppressing the spurious resonances. The frame-like structure is produced in a self-aligning fashion in that the frame-like structure is used to define the top electrode area. Furthermore, it is preferred that the frame-like structure is made of a different material from the top electrode. The frame-like structure is caused to fuse with the contacting part of the top electrode to form an alloy. An etching mask is then used to cover at least part of the frame-like structure and the entire top electrode surrounded by the frame-like structure for etching. An etching medium is used to remove the unreacted portion of the top electrode outside the frame-like structure.
摘要翻译：一种生产具有减小的寄生共振的BAW器件的方法，其中该器件包括顶电极，底电极和压电层。在顶部电极的顶部形成框状结构，以抑制寄生谐振。以自对准的方式制造框架状结构，因为框架状结构用于限定顶部电极区域。此外，优选的是，框状结构由与顶部电极不同的材料制成。使框架状结构与顶部电极的接触部分熔合以形成合金。然后使用蚀刻掩模来覆盖框架状结构的至少一部分和被用于蚀刻的框架状结构包围的整个顶部电极。使用蚀刻介质去除框架状结构外的顶部电极的未反应部分。

7. 发明授权

US06812619B1 Resonator structure and a filter comprising such a resonator structure 有权
标题翻译：谐振器结构和包括这种谐振器结构的滤波器
公开(公告)号：US06812619B1
公开(公告)日：2004-11-02
申请号：US10031579
申请日：2002-01-17
申请人： Jyrki Kaitila , Markku Ylilammi , Juha Ellä
发明人： Jyrki Kaitila , Markku Ylilammi , Juha Ellä
IPC分类号： H01I4108
CPC分类号： H03H9/173 , H03H9/132
摘要： A resonator structure (1200, 1300, 1400), where a certain wave mode is piezoelectrically excitable, comprises at least two conductor layers (110, 120) and at least one piezoelectric layer (110) in between the conductor layers, said conductor layers and piezoelectric layer extending over a first area of the resonator structure, which first area is a piezoelectrically excitable area of the resonator structure. The resonator structure is characterized in that it comprises a frame-like zone (2, 4) confining a center area (3) within the first area, a cut-off frequency of the piezoelectrically excited wave mode in the layer structure of the frame-like zone is different from that in the layer structure of the center area, and width of the frame-like zone and acoustical properties of the layer structure in the frame-like zone are arranged so that displacement relating to the piezoelectrically excited strongest resonance mode is substantially uniform in the center area of the resonator.
摘要翻译：一种其中一定波模式是可压电激发的谐振器结构（1200,1300,1400）包括至少两个导体层（110,120）和至少一个压电层（110），位于导体层之间，所述导体层和压电层在谐振器结构的第一区域上延伸，该第一区域是谐振器结构的压电可激发区域。谐振器结构的特征在于，其包括限制第一区域内的中心区域（3）的框架状区域（2,4），框架状区域的层结构中的压电激发波模式的截止频率，与框状区域的层结构不同，框状区域的框状宽度和层结构的声学特性被布置成使得与压电激发的最强谐振模式有关的位移为在谐振器的中心区域基本均匀。

8. 发明授权

US06509813B2 Bulk acoustic wave resonator with a conductive mirror 失效
标题翻译：具有导电镜的体声波谐振器
公开(公告)号：US06509813B2
公开(公告)日：2003-01-21
申请号：US09761171
申请日：2001-01-16
申请人： Juha Ellä , Jyrki Kaitila
发明人： Juha Ellä , Jyrki Kaitila
IPC分类号： H03H915
CPC分类号： H03H9/105 , H01L2224/73265 , H03H3/02 , H03H9/175 , Y10T29/42
摘要： A method of fabricating a bulk acoustic wave (BAW) resonator and a BAW resonator so fabricated, the method including the steps of: providing a substrate; providing a first isolation structure; and providing a resonator section including a piezolayer; wherein the first isolation structure includes an acoustic mirror made from only electrically conductive layers of alternating high and low acoustic impedance. In some applications, the first isolation structure is situated between the resonator section and the substrate, while in other applications, the first isolation structure is situated above the resonator section (on the side of the resonator section facing away from the substrate), so that the resonator section lies between the first isolation structure and the substrate, and the resonator then further comprises a second isolation structure situated between the resonator section and the substrate.
摘要翻译：一种制造体声波（BAW）谐振器和如此制造的BAW谐振器的方法，该方法包括以下步骤：提供衬底; 提供第一隔离结构; 并提供包括压电层的谐振器部分; 其中所述第一隔离结构包括仅由交替的高和低声阻抗的导电层制成的声镜。在一些应用中，第一隔离结构位于谐振器部分和基板之间，而在其它应用中，第一隔离结构位于谐振器部分之上（在谐振器部分背离基板的一侧），使得谐振器部分位于第一隔离结构和衬底之间，并且谐振器然后还包括位于谐振器部分和衬底之间的第二隔离结构。

9. 发明授权

US06496085B2 Solidly mounted multi-resonator bulk acoustic wave filter with a patterned acoustic mirror 有权
标题翻译：具有图案化声镜的固体多谐振荡器体声波滤波器
公开(公告)号：US06496085B2
公开(公告)日：2002-12-17
申请号：US09753214
申请日：2001-01-02
申请人： Juha Ellä , Jyrki Kaitila , Meeri Talvikki Partanen
发明人： Juha Ellä , Jyrki Kaitila , Meeri Talvikki Partanen
IPC分类号： H03H956
CPC分类号： H03H9/02125 , H03H3/04 , H03H9/564 , Y10T29/42
摘要： A method of fabricating a multi-resonator bulk acoustic wave (BAW) filter and a filter provided by such a method, the filter having a plurality of layers of materials serving as an acoustic mirror for a plurality of resonator sections, each resonator section including at least a top electrode and a bottom electrode sandwiching a piezolayer, the method including the steps of: choosing dielectric materials for some of the layers of materials serving as the acoustic mirror and metallic materials for the others of the layers; and providing at least one of the metallic layers via a fabrication procedure in which the metallic layer is patterned into distinct portions by an etching process that removes enough of the metallic layer between where different resonator sections are to be placed as to provide electrical isolation between the portions of the layer beneath the different resonator sections; thereby providing a multi-resonator BAW filter with reduced capacitive coupling between resonators, compared to the capacitive coupling present in a multi-resonator BAW filter fashioned in a similar manner except excluding the step of etching to pattern any metallic layers of the similarly fashioned acoustic mirror.
摘要翻译：一种制造多谐振器体声波（BAW）滤波器和由这种方法提供的滤波器的方法，该滤波器具有多层材料，用作多个谐振器部分的声反射镜，每个谐振器部分包括在至少顶部电极和底部电极夹着压电层，该方法包括以下步骤：选择用作声镜的材料层的介电材料和其他层的金属材料; 以及通过制造程序提供金属层中的至少一个，其中通过蚀刻工艺将金属层图案化成不同的部分，该蚀刻工艺在不同的谐振器部分之间移除足够的金属层，以在其之间提供电隔离不同谐振器部分下面的层的部分; 从而提供了一种多谐振器BAW滤波器，其具有在谐振器之间具有减小的电容耦合的谐振器，与以类似方式形成的多谐振器BAW滤波器中存在的电容耦合相比，除了排除刻蚀步骤以对类似形式的声镜的任何金属层进行图案化。

10. 发明授权

US09660687B2 Front-end circuit for band aggregation modes 有权
公开(公告)号：US09660687B2
公开(公告)日：2017-05-23
申请号：US14346622
申请日：2011-09-22
申请人： Juha Ellä , Pekka Ikonen , Edgar Schmidhammer , Pasi Tikka
发明人： Juha Ellä , Pekka Ikonen , Edgar Schmidhammer , Pasi Tikka
IPC分类号： H04B1/40 , H04W16/14 , H04B1/00 , H04B1/52 , H04B7/04 , H04L5/14
CPC分类号： H04B1/40 , H04B1/006 , H04B1/0064 , H04B1/52 , H04B7/04 , H04L5/14
摘要： A front-end circuit for a wireless communication unit includes at least two antenna feeds. At least one of the antennas is coupled to an antenna switch. The circuit comprises filters and duplexers and is prepared to operate a number of FDD frequency bands. Each FDD band comprises an Rx band for receive signals and a Tx band for transmit signals. The circuit provides a single band operation mode for each frequency band and aggregated band operation modes. In an aggregated band operation mode Rx signals can be received in two different frequency bands at the same time as well as Tx signals can be transmitted in at least one of the two different frequency bands. In addition, TDD bands as well as GSM bands are covered.

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