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1. 发明授权

US07616079B2 Bulk acoustic wave resonator and circuit comprising same 有权
标题翻译：体声波谐振器和包括其的电路
公开(公告)号：US07616079B2
公开(公告)日：2009-11-10
申请号：US10530507
申请日：2003-09-18
申请人： Pasi Tikka , Ralph Stömmer , Edgar Schmidhammer , Michael Unterberger
发明人： Pasi Tikka , Ralph Stömmer , Edgar Schmidhammer , Michael Unterberger
IPC分类号： H03H9/205 , H03H9/54
CPC分类号： H03H9/583
摘要： The invention relates to a resonator operating with bulk acoustic waves (BAW resonator, BAW=Bulk Acoustic Wave) and band-pass filters constructed of such resonators. To increase the edge steepness of the transmission band of a BAW band-pass filter, the invention proposes reducing the effective coupling of a BAW resonator by using the connection in parallel of a BAW resonator and a capacitor instead of only one resonator. In addition, to increase the edge steepness of the transmission band, the use of a connection of coupled BAW resonators in the serial branch of a filter circuit with another resonator or resonator stack in the parallel branch of the filter circuit is proposed, the additional resonator or resonator stack being connected to the center electrode of the resonator stack specified initially.
摘要翻译：本发明涉及一种使用体声波（BAW谐振器，BAW =体声波）和由这种谐振器构成的带通滤波器的谐振器。为了增加BAW带通滤波器的传输频带的边缘陡度，本发明通过使用与BAW谐振器和电容器并联的连接而不是只有一个谐振器来降低BAW谐振器的有效耦合。此外，为了增加传输频带的边缘陡度，提出了在滤波器电路的并联支路中使用与滤波器电路的串行分支中的另一谐振器或谐振器堆叠的耦合的BAW谐振器的连接，附加谐振器或谐振器堆叠连接到最初指定的谐振器叠层的中心电极。

2. 发明授权

US07354816B2 Field effect transistor with gate spacer structure and low-resistance channel coupling 失效
标题翻译：具有栅极间隔结构和低电阻沟道耦合的场效应晶体管
公开(公告)号：US07354816B2
公开(公告)日：2008-04-08
申请号：US11363263
申请日：2006-02-28
申请人： Matthias Goldbach , Ralph Stömmer
发明人： Matthias Goldbach , Ralph Stömmer
IPC分类号： H01L21/8238
CPC分类号： H01L21/823864 , H01L21/82345 , H01L21/823468 , H01L21/823842 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： Spacer structures of field effect transistor structures are enhanced at least in sections with immobile charge carriers. The charge accumulated in the spacer structures induces an enhancement zone of mobile charge carriers in the underlying semiconductor substrate. The enhancement zone reduces the resistance of a channel coupling between the respective source/drain region and a channel region of the respective field effect transistor structure, wherein the channel region being controlled by a potential of a gate electrode. Source/drain regions drawn back from the gate electrode of the field effect transistor structure reduce an overlap capacitance between the gate electrode and the respective source/drain regions. A method for fabricating transistor arrangements having n-FETs and p-FETs with enhanced spacer structures.
摘要翻译：场效应晶体管结构的间隔结构至少在具有固定电荷载流子的部分被增强。在间隔结构中累积的电荷在底层半导体衬底中引起移动电荷载流子的增强区。增强区减小相应的源极/漏极区域和相应的场效应晶体管结构的沟道区域之间的沟道耦合的电阻，其中沟道区域由栅电极的电位控制。从场效应晶体管结构的栅电极引出的源极/漏极区域减小了栅极电极和相应的源极/漏极区域之间的重叠电容。一种用于制造具有n-FET和具有增强的间隔结构的p-FET的晶体管布置的方法。

3. 发明授权

US07538637B2 Acoustic wave transducer with transverse mode suppression 有权
标题翻译：具有横向模式抑制的声波换能器
公开(公告)号：US07538637B2
公开(公告)日：2009-05-26
申请号：US10563890
申请日：2004-06-16
申请人： Markus Mayer , Ralph Stömmer , Günter Kovacs , Andreas Bergmann , Pasi Tikka
发明人： Markus Mayer , Ralph Stömmer , Günter Kovacs , Andreas Bergmann , Pasi Tikka
IPC分类号： H03H9/64 , H03H9/25
CPC分类号： H03H9/02992 , H03H9/02881 , H03H9/14532 , H03H9/1455
摘要： An acoustic wave transducer includes an acoustic track having electrode fingers for different electrodes. The electrode fingers engage to form exciting finger pairs. The acoustic track also includes marginal areas and an excitation area. The electrode fingers engage in the excitation area. The marginal areas and the excitation area are located along a transverse direction of the acoustic wave transducer. A longitudinal phase speed of an acoustic wave in the acoustic track is less in a marginal area than in the excitation area, and the acoustic wave is excitable and has a transversal basic mode. The following applies in the transversal basic mode for a wave number ky: (ky)2>0 in a marginal area, and (ky)2
摘要翻译：声波换能器包括具有用于不同电极的电极指的声轨。电极指接合以形成令人兴奋的手指对。声轨还包括边缘区域和激发区域。电极指接合在激发区域。边缘区域和激发区域沿着声波换能器的横向方向定位。声波的声波的纵向相位速度在边缘区域比激励区域少，声波是可兴奋的并且具有横向基本模式。以下适用于边缘区域中波数ky：（ky）2> 0的横向基本模式，以及在声轨外部的外部区域中的（ky）2 <0。激发区域的ky小于边缘区域和外部区域。

4. 发明授权

US07187109B2 Electrical component having overlapping electrodes, and method for the manufacture of same 有权
标题翻译：具有重叠电极的电气部件及其制造方法
公开(公告)号：US07187109B2
公开(公告)日：2007-03-06
申请号：US10900515
申请日：2004-07-28
申请人： Pasi Tikka , Ralph Stömmer , Edgar Schmidhammer , Habbo Heinze
发明人： Pasi Tikka , Ralph Stömmer , Edgar Schmidhammer , Habbo Heinze
IPC分类号： H01L41/08
CPC分类号： H03H9/132
摘要： Overlapped electrodes of an electrical component are dimensioned in such a way that when there is translational displacement of one electrode in relation to the electrode situated opposite, their area of overlap remains within a manufacturing tolerance β/2, and also remains constant within the tolerance limits when there is a simultaneous rotation of the electrodes with respect to one another. This is achieved in that the intersecting edge pairs of the overlapping electrodes are designed parallel to one another, whereby the length, measured in the direction parallel to the respective edge pair, of the corresponding electrode everywhere exceeds by β the corresponding length of the area of overlap.
摘要翻译：电气部件的重叠电极的尺寸设计成使得当相对于位于相对的电极存在一个电极的平移位移时，它们的重叠面积保持在制造公差β/ 2内，并且在公差范围内保持恒定当电极相对于彼此同时旋转时。这样做的原因在于，重叠电极的相交边缘对被设计为彼此平行，由此在相应电极的平行于相应边缘对的方向上测量的长度在每个地方超过了相应的长度交叠。

5. 发明授权

US07098573B2 Frequency-tunable resonator 有权
标题翻译：频率可调谐谐振器
公开(公告)号：US07098573B2
公开(公告)日：2006-08-29
申请号：US10482885
申请日：2002-05-21
申请人： Ralph Stömmer
发明人： Ralph Stömmer
IPC分类号： H01L41/08 , H03H9/17
CPC分类号： H03H9/175 , H03H3/04 , H03H9/171
摘要： A frequency-tunable resonator comprises a basic element having at least one piezoelectric layer and at least one semiconducting layer. The electrodes, formed on main surface situated opposite one another of the basic element, are loaded with an external voltage, whereby the resonant frequency of the basic element or of the resonator can be in dependence on the voltage.
摘要翻译：频率可调谐谐振器包括具有至少一个压电层和至少一个半导体层的基本元件。形成在基本元件彼此相对的主表面上的电极被加载有外部电压，由此基本元件或谐振器的谐振频率可以取决于电压。

6. 发明授权

US06927649B2 Component working with acoustic waves and having a matching network 有权
标题翻译：使用声波并具有匹配网络的组件
公开(公告)号：US06927649B2
公开(公告)日：2005-08-09
申请号：US10456105
申请日：2003-06-06
申请人： Thomas Metzger , Pasi Tikka , Edgar Schmidhammer , Ralph Stömmer , Habbo Heinze
发明人： Thomas Metzger , Pasi Tikka , Edgar Schmidhammer , Ralph Stömmer , Habbo Heinze
IPC分类号： H03H9/05 , H03H9/58 , H03H9/70 , H03H9/54 , H03H9/64
CPC分类号： H03H9/706 , H01L2224/48091 , H01L2224/48227 , H03H9/0557 , H03H9/0571 , H03H9/587 , H03H9/589 , H01L2924/00014
摘要： A component working with acoustic bulk waves is provided that has a multi-layer substrate, where the multi-layer substrate comprises an integrated matching network and further circuit elements for adapting the electrical filter properties and can serve as carrier substrate for thin-film resonators.
摘要翻译：提供了具有声学体波的部件，其具有多层基板，其中多层基板包括集成匹配网络，以及用于适应电过滤器特性的另外的电路元件，并且可以用作薄膜谐振器的载体基板。

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