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1. 发明授权

US08121162B2 Nanocrystal structures 有权
标题翻译：纳米晶体结构
公开(公告)号：US08121162B2
公开(公告)日：2012-02-21
申请号：US12275800
申请日：2008-11-21
申请人： Hans J. Eisler , Vikram C. Sundar , Michael E. Walsh , Victor I. Klimov , Moungi G. Bawendi , Henry I. Smith
发明人： Hans J. Eisler , Vikram C. Sundar , Michael E. Walsh , Victor I. Klimov , Moungi G. Bawendi , Henry I. Smith
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： C30B29/605 , C30B5/00 , G02B6/122 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02521 , H01L21/02601 , H01L29/06 , H01L29/20 , H01L29/22 , H01L29/26 , Y10S977/813 , Y10T428/12528 , Y10T428/24917 , Y10T428/252 , Y10T428/31678
摘要： A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
摘要翻译：在光栅上包括光栅和半导体纳米晶体层的结构可以是激光。半导体纳米晶体层可以包括多个包括II-VI族化合物的半导体纳米晶体，纳米晶体分布在金属氧化物基质中。光栅可以具有从200nm到500nm的周期。

2. 发明申请

US20090253224A1 Nanocrystal structures 有权
标题翻译：纳米晶体结构
公开(公告)号：US20090253224A1
公开(公告)日：2009-10-08
申请号：US12275800
申请日：2008-11-21
申请人： Hans J. Eisler , Vikram C. Sundar , Michael E. Walsh , Victor I. Klimov , Moungi G. Bawendi , Henry I. Smith
发明人： Hans J. Eisler , Vikram C. Sundar , Michael E. Walsh , Victor I. Klimov , Moungi G. Bawendi , Henry I. Smith
IPC分类号： H01L33/00
CPC分类号： C30B29/605 , C30B5/00 , G02B6/122 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02521 , H01L21/02601 , H01L29/06 , H01L29/20 , H01L29/22 , H01L29/26 , Y10S977/813 , Y10T428/12528 , Y10T428/24917 , Y10T428/252 , Y10T428/31678
摘要： A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
摘要翻译：在光栅上包括光栅和半导体纳米晶体层的结构可以是激光。半导体纳米晶体层可以包括多个包括II-VI族化合物的半导体纳米晶体，纳米晶体分布在金属氧化物基质中。光栅可以具有从200nm到500nm的周期。

3. 发明授权

US07150910B2 Nanocrystal structures 有权
公开(公告)号：US07150910B2
公开(公告)日：2006-12-19
申请号：US10294742
申请日：2002-11-15
申请人： Hans J. Eisler , Vikram C. Sundar , Michael E. Walsh , Victor I. Klimov , Moungi G. Bawendi , Henry I. Smith
发明人： Hans J. Eisler , Vikram C. Sundar , Michael E. Walsh , Victor I. Klimov , Moungi G. Bawendi , Henry I. Smith
IPC分类号： B32B9/04 , B32B18/00
CPC分类号： C30B29/605 , C30B5/00 , G02B6/122 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02521 , H01L21/02601 , H01L29/06 , H01L29/20 , H01L29/22 , H01L29/26 , Y10S977/813 , Y10T428/12528 , Y10T428/24917 , Y10T428/252 , Y10T428/31678
摘要： A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

4. 发明授权

US07470473B2 Nanocrystal structures 有权
标题翻译：纳米晶体结构
公开(公告)号：US07470473B2
公开(公告)日：2008-12-30
申请号：US11594732
申请日：2006-11-09
申请人： Hans J. Eisler , Vikram C. Sundar , Michael E. Walsh , Victor I. Klimov , Moungi G. Bawendi , Henry I. Smith
发明人： Hans J. Eisler , Vikram C. Sundar , Michael E. Walsh , Victor I. Klimov , Moungi G. Bawendi , Henry I. Smith
IPC分类号： B32B9/00
CPC分类号： C30B29/605 , C30B5/00 , G02B6/122 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02521 , H01L21/02601 , H01L29/06 , H01L29/20 , H01L29/22 , H01L29/26 , Y10S977/813 , Y10T428/12528 , Y10T428/24917 , Y10T428/252 , Y10T428/31678
摘要： A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
摘要翻译：在光栅上包括光栅和半导体纳米晶体层的结构可以是激光。半导体纳米晶体层可以包括多个包括II-VI族化合物的半导体纳米晶体，纳米晶体分布在金属氧化物基质中。光栅可以具有从200nm到500nm的周期。

5. 发明授权

US06819692B2 Optical amplifiers and lasers 有权
标题翻译：光放大器和激光器
公开(公告)号：US06819692B2
公开(公告)日：2004-11-16
申请号：US09805435
申请日：2001-03-14
申请人： Victor I. Klimov , Alexandre Mikhailovski , Jennifer A. Hollingsworth , Catherine A. Leatherdale , Moungi G. Bawendi
发明人： Victor I. Klimov , Alexandre Mikhailovski , Jennifer A. Hollingsworth , Catherine A. Leatherdale , Moungi G. Bawendi
IPC分类号： H01S314
CPC分类号： H01S3/169 , B82Y20/00 , H01S3/163 , H01S3/17 , H01S5/041 , H01S5/10 , H01S5/341 , H01S5/3412 , H01S5/50
摘要： An optical amplifier and laser having both broad band and wide range specific band capability can be based on semiconductor nanocrystal solids.
摘要翻译：具有宽带和宽范围特定带能力的光放大器和激光器可以基于半导体纳米晶体固体。

6. 发明授权

US06191861B1 Femtosecond chirp-free transient absorption method and apparatus 失效
标题翻译：飞秒无啁啾的瞬时吸收方法和装置
公开(公告)号：US06191861B1
公开(公告)日：2001-02-20
申请号：US09249726
申请日：1999-02-13
申请人： Duncan W. McBranch , Victor I. Klimov
发明人： Duncan W. McBranch , Victor I. Klimov
IPC分类号： G01N2159
CPC分类号： G01N21/1717
摘要： A method and apparatus for femtosecond transient absorption comprising phase-sensitive detection, spectral scanning and simultaneous controlling of a translation stage to obtain TA spectra information having at least a sensitivity two orders of magnitude higher than that for single-shot methods, with direct, simultaneous compensation for chirp as the data is acquired. The present invention includes a amplified delay translation stage which generates a splittable frequency-doubled laser signal at a predetermined frequency f, a controllable means for synchronously modulating one of the laser signals at a repetition rate of f/2, applying the laser signals to a material to be sample, and acquiring data from the excited sample while simultaneously controlling the controllable means for synchronously modulating.
摘要翻译：一种用于飞秒瞬态吸收的方法和装置，包括相敏检测，光谱扫描和翻译级的同时控制，以获得具有至少比单次方法高两个数量级的灵敏度的TA光谱信息，其具有直接，同时获取数据时对啁啾的补偿。本发明包括放大的延迟转换级，其产生预定频率f的可分开的倍频激光信号，用于以f / 2的重复频率同步调制其中一个激光信号的可控装置，将激光信号施加到要采样的材料，并且从同时控制用于同步调制的可控装置同时获取激发样品的数据。

7. 发明申请

US20100236614A1 HYBRID PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS AND AMORPHOUS SILICON 审中-公开
标题翻译：基于半导体纳米晶体和非晶硅的混合光伏
公开(公告)号：US20100236614A1
公开(公告)日：2010-09-23
申请号：US12701396
申请日：2010-02-05
申请人： Victor I. Klimov , Alp T. Findikoglu , Baoquan Sun , Donald J. Werder , Milan Sykora
发明人： Victor I. Klimov , Alp T. Findikoglu , Baoquan Sun , Donald J. Werder , Milan Sykora
IPC分类号： H01L31/00 , H01B1/04
CPC分类号： H01L31/03529 , H01L31/03921 , H01L31/074 , Y02E10/50
摘要： Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and perhaps, increased conversion efficiency in the ultraviolet through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs. On the other hand, in devices comprising narrow-gap PbS NCs, both the NCs and silicon contribute to photocurrent, which results in PV response extending from the visible to the near-infrared. This work demonstrates the feasibility of hybrid PV devices that combine advantages of mature silicon fabrication technologies with the unique electronic properties of semiconductor NCs.
摘要翻译：半导体纳米晶体（NC）是用于光伏（PV）结构的有希望的材料，可以受益于吸收光谱的尺寸控制可调谐性，各种串联架构的实现的容易性，以及通过载波倍增增加紫外线的转换效率。使用光伏技术中NC的独特性能的第一个实际步骤可以是通过与传统的硅基太阳能电池的集成。在这里，我们演示了将胶体NC与非晶硅组合的混合PV结构的一个例子。在这些结构中，NC和硅是电耦合的，并且可以通过改变关于硅带边缘的NC状态的对准来调节该耦合的状态。例如，使用宽间隙CdSe NC，我们展示了仅由NCs引起的光响应。另一方面，在包含窄间隙PbS NC的器件中，NC和硅都有助于光电流，这导致PV响应从可见光延伸到近红外。这项工作展示了将成熟硅制造技术的优点与半导体NC的独特电子性能相结合的混合光伏器件的可行性。

8. 发明申请

US20100013376A1 Mixed semiconductor nanocrystal compositions 有权
标题翻译：混合半导体纳米晶体组合物
公开(公告)号：US20100013376A1
公开(公告)日：2010-01-21
申请号：US12218716
申请日：2008-07-16
申请人： Garry R. Maskaly , Richard D. Schaller , Victor I. Klimov
发明人： Garry R. Maskaly , Richard D. Schaller , Victor I. Klimov
IPC分类号： H01J1/62 , G02B5/00
CPC分类号： B82Y30/00 , B82Y20/00
摘要： Composition comprising one or more energy donors and one or more energy acceptors, wherein energy is transferred from the energy donor to the energy acceptor and wherein: the energy acceptor is a colloidal nanocrystal having a lower band gap energy than the energy donor; the energy donor and the energy acceptor are separated by a distance of 40 nm or less; wherein the average peak absorption energy of the acceptor is at least 20 meV greater than the average peak emission energy of the energy donor; and wherein the ratio of the number of energy donors to the number of energy acceptors is from about 2:1 to about 1000:1.
摘要翻译：组合物，其包含一种或多种能量供体和一种或多种能量受体，其中能量从能量供体转移到能量受体，并且其中：所述能量受体是具有比所述能量供体更低的带隙能量的胶体纳米晶体; 能量供体和能量受体分开40nm或更小的距离; 其中受体的平均峰值吸收能量比能量给体的平均峰值发射能量大至少20meV; 并且其中能量供体的数量与能量受体的数量的比率为约2:1至约1000:1。

9. 发明授权

US07935419B1 Thick-shell nanocrystal quantum dots 有权
标题翻译：厚壳纳米晶体量子点
公开(公告)号：US07935419B1
公开(公告)日：2011-05-03
申请号：US12322813
申请日：2009-02-06
申请人： Jennifer A. Hollingsworth , Yongfen Chen , Victor I. Klimov , Han Htoon , Javier Vela
发明人： Jennifer A. Hollingsworth , Yongfen Chen , Victor I. Klimov , Han Htoon , Javier Vela
IPC分类号： B32B5/16
CPC分类号： C01B19/007 , B82Y10/00 , B82Y30/00 , C01P2002/84 , C01P2002/90 , C01P2004/64 , C01P2004/80 , C01P2006/40 , H01L29/127 , Y10T428/12028 , Y10T428/12049 , Y10T428/12181 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.
摘要翻译：包含平均直径为至少1.5nm的内芯和外壳的胶体纳米晶体量子点，其中所述外壳包含多个单层，其中至少30％的量子点的导通时间分数为0.80或更大，连续激发条件至少10分钟的时间。

10. 发明申请

US20090116524A1 Single-exciton nanocrystal laser 有权
标题翻译：单激子纳米晶体激光器
公开(公告)号：US20090116524A1
公开(公告)日：2009-05-07
申请号：US12152554
申请日：2008-05-15
申请人： Victor I. Klimov , Sergei A. Ivanov
发明人： Victor I. Klimov , Sergei A. Ivanov
IPC分类号： H01S5/04
CPC分类号： H01S5/327 , H01S3/169 , H01S5/041
摘要： A laser system employing amplification via a single exciton regime and to optical gain media having single exciton amplification is provided.
摘要翻译：提供了通过单个激子状态进行放大的激光系统和具有单个激子扩增的光学增益介质。

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