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    • 3. 发明授权
    • Liquid crystal display device with high aperture ratio
    • 具有高开口率的液晶显示装置
    • US08031279B2
    • 2011-10-04
    • US12382421
    • 2009-03-16
    • Seung Ryull ParkDong Guk Kim
    • Seung Ryull ParkDong Guk Kim
    • G02F1/1343
    • G02F1/134363G02F1/136213
    • Disclosed is an in-plane switching (IPS) mode liquid crystal display (LCD) device having an increased aperture ratio by overlapping a storage capacitor on a lower end of an electrode. The (IPS) mode liquid crystal display device (LCD) device includes first and second substrates; a gate line and a data line arranged horizontally and vertically to define a plurality of pixel regions on the first substrate; a switching device, having a gate electrode, a semiconductor layer and source and drain electrodes, at a crossing of the gate line and the data line; a passivation film on an entire surface of the first substrate including the switching device; a common electrode and a pixel electrode alternately disposed at an upper portion of the passivation film and generating an in-plane electric field, wherein at least one of the common and pixel electrodes has a first storage capacitor at its lower end; and a liquid crystal layer between the first and second substrates.
    • 公开了一种通过在电极的下端重叠存储电容器而具有增加的孔径比的平面内切换(IPS)模式液晶显示(LCD)装置。 (IPS)模式液晶显示装置(LCD)装置包括第一和第二基板; 水平和垂直布置的栅极线和数据线,以在第一基板上限定多个像素区域; 开关器件,在栅极线和数据线的交叉处具有栅极电极,半导体层以及源极和漏极电极; 在包括所述开关装置的所述第一基板的整个表面上的钝化膜; 公共电极和像素电极,交替地设置在所述钝化膜的上部并产生面内电场,其中所述公共电极和所述像素电极中的至少一个在其下端具有第一存储电容器; 以及在第一和第二基板之间的液晶层。
    • 4. 发明申请
    • Transflective type liquid crystal display device and a method for fabricating the same
    • 透反式液晶显示装置及其制造方法
    • US20070153174A1
    • 2007-07-05
    • US11639179
    • 2006-12-15
    • Dong Guk Kim
    • Dong Guk Kim
    • G02F1/1335
    • G02F1/136227G02F1/133555
    • A transflective type LCD device includes a substrate, gate and data lines perpendicularly arranged to each other to define unit pixel regions each including transmitting and reflective parts, a plurality of thin film transistors formed adjacent to crossing portions of the gate and data lines, a passivation layer formed on the substrate including the thin film transistors, a plurality of pixel electrodes formed on the passivation layer in each unit pixel region, a plurality of first reflective plates electrically connected with the pixel electrodes and formed in the reflective parts, and second reflective plates formed on a predetermined portions of the substrate corresponding to the boundaries between the transmitting parts and the reflective parts.
    • 半透射型LCD装置包括彼此垂直布置以限定单元像素区域的基板,栅极和数据线,每个像素区域包括透射和反射部分,与栅极和数据线的交叉部分相邻形成的多个薄膜晶体管,钝化层 形成在包括薄膜晶体管的基板上的多个像素电极,形成在每个单位像素区域中的钝化层上的多个像素电极,与像素电极电连接并形成在反射部分中的多个第一反射板,以及第二反射板 形成在与发送部分和反射部分之间的边界相对应的基板的预定部分上。
    • 5. 发明授权
    • Transflective liquid crystal display device and method for manufacturing the same
    • 半透射型液晶显示装置及其制造方法
    • US08115894B2
    • 2012-02-14
    • US12289074
    • 2008-10-20
    • Dong Guk KimWon Seok KangJoo Soo Lim
    • Dong Guk KimWon Seok KangJoo Soo Lim
    • G02F1/1335
    • G02F1/136227G02F1/133555G02F1/136213G02F2001/136231G02F2201/40
    • A transflective type LCD device and a method for manufacturing the same is disclosed, in which an aperture ratio of a reflective part is improved, and manufacturing process is simplified by decreasing the number of masks for forming contact holes. The transflective type LCD device includes a plurality of gate and data lines crossing each other, defining a plurality of pixel regions; a thin film transistor at a crossing point of the gate and data lines; a lower storage electrode formed by one portion of a preceding gate line, and an upper storage electrode above the lower storage electrode having a gate insulating layer in between; a transmitting electrode in contact the upper storage electrode; and a reflective electrode in contact with the transmitting electrode in the reflective part of the pixel region wherein the transmitting electrode is in between the reflective electrode and the substrate.
    • 公开了一种透反式LCD装置及其制造方法,其中反射部件的开口率得到改善,并且通过减少形成接触孔的掩模的数量来简化制造工艺。 半透射型LCD装置包括彼此交叉的多个栅极和数据线,限定多个像素区域; 在栅极和数据线的交叉点处的薄膜晶体管; 由前一栅极线的一部分形成的下部存储电极和位于下部存储电极上方的上部存储电极,其间具有栅极绝缘层; 与上部存储电极接触的发射电极; 以及在像素区域的反射部分中与发射电极接触的反射电极,其中发射电极位于反射电极和衬底之间。
    • 6. 发明申请
    • Transflective liquid crystal display device and method for manufacturing the same
    • 半透射型液晶显示装置及其制造方法
    • US20090066868A1
    • 2009-03-12
    • US12289074
    • 2008-10-20
    • Dong Guk KimWon Seok KangJoo Soo Lim
    • Dong Guk KimWon Seok KangJoo Soo Lim
    • G02F1/1335G02F1/133
    • G02F1/136227G02F1/133555G02F1/136213G02F2001/136231G02F2201/40
    • A transflective type LCD device and a method for manufacturing the same is disclosed, in which an aperture ratio of a reflective part is improved, and manufacturing process is simplified by decreasing the number of masks for forming contact holes. The transflective type LCD device includes a plurality of gate and data lines crossing each other, defining a plurality of pixel regions; a thin film transistor at a crossing point of the gate and data lines; a lower storage electrode formed by one portion of a preceding gate line, and an upper storage-electrode above the lower storage electrode having a gate insulating layer in between; a transmitting electrode in contact the upper storage electrode; and a reflective electrode in contact with the transmitting electrode in the reflective part of the pixel region wherein the transmitting electrode is in between the reflective electrode and the substrate.
    • 公开了一种透反式LCD装置及其制造方法,其中反射部件的开口率得到改善,并且通过减少形成接触孔的掩模的数量来简化制造工艺。 半透射型LCD装置包括彼此交叉的多个栅极和数据线,限定多个像素区域; 在栅极和数据线的交叉点处的薄膜晶体管; 由前一栅极线的一部分形成的下部存储电极和位于其下方的栅极绝缘层的下部存储电极之上的上部存储电极; 与上部存储电极接触的发射电极; 以及在像素区域的反射部分中与发射电极接触的反射电极,其中发射电极位于反射电极和衬底之间。
    • 7. 发明申请
    • Liquid crystal display device with high aperture ratio
    • 具有高开口率的液晶显示装置
    • US20090185092A1
    • 2009-07-23
    • US12382421
    • 2009-03-16
    • Seung Ryull ParkDong Guk Kim
    • Seung Ryull ParkDong Guk Kim
    • G02F1/1343
    • G02F1/134363G02F1/136213
    • Disclosed is an in-plane switching (IPS) mode liquid crystal display (LCD) device having an increased aperture ratio by overlapping a storage capacitor on a lower end of an electrode. The (IPS) mode liquid crystal display device (LCD) device includes first and second substrates; a gate line and a data line arranged horizontally and vertically to define a plurality of pixel regions on the first substrate; a switching device, having a gate electrode, a semiconductor layer and source and drain electrodes, at a crossing of the gate line and the data line; a passivation film on an entire surface of the first substrate including the switching device; a common electrode and a pixel electrode alternately disposed at an upper portion of the passivation film and generating an in-plane electric field, wherein at least one of the common and pixel electrodes has a first storage capacitor at its lower end; and a liquid crystal layer between the first and second substrates.
    • 公开了一种通过在电极的下端重叠存储电容器而具有增加的孔径比的平面内切换(IPS)模式液晶显示(LCD)装置。 (IPS)模式液晶显示装置(LCD)装置包括第一和第二基板; 水平和垂直布置的栅极线和数据线,以在第一基板上限定多个像素区域; 开关器件,在栅极线和数据线的交叉处具有栅极电极,半导体层以及源极和漏极电极; 在包括所述开关装置的所述第一基板的整个表面上的钝化膜; 公共电极和像素电极交替地设置在钝化膜的上部并产生面内电场,其中至少一个公共电极和像素电极在其下端具有第一存储电容器; 以及在第一和第二基板之间的液晶层。
    • 8. 发明授权
    • Liquid crystal display device with high aperture ratio having a metal layer and a storage electrode entirely overlapped with a common electrode
    • 具有高开口率的液晶显示装置具有金属层和与公共电极完全重叠的存储电极
    • US07515237B2
    • 2009-04-07
    • US11166094
    • 2005-06-27
    • Seung Ryull ParkDong Guk Kim
    • Seung Ryull ParkDong Guk Kim
    • G02F1/1343
    • G02F1/134363G02F1/136213
    • Disclosed is an in-plane switching (IPS) mode liquid crystal display (LCD) device having an increased aperture ratio by overlapping a storage capacitor on a lower end of an electrode. The (IPS) mode liquid crystal display device (LCD) device includes first and second substrates; a gate line and a data line arranged horizontally and vertically to define a plurality of pixel regions on the first substrate; a switching device, having a gate electrode, a semiconductor layer and source and drain electrodes, at a crossing of the gate line and the data line; a passivation film on an entire surface of the first substrate including the switching device; a common electrode and a pixel electrode alternately disposed at an upper portion of the passivation film and generating an in-plane electric field, wherein at least one of the common and pixel electrodes has a first storage capacitor at its lower end; and a liquid crystal layer between the first and second substrates.
    • 公开了一种通过在电极的下端重叠存储电容器而具有增加的孔径比的平面内切换(IPS)模式液晶显示(LCD)装置。 (IPS)模式液晶显示装置(LCD)装置包括第一和第二基板; 水平和垂直布置的栅极线和数据线,以在第一基板上限定多个像素区域; 开关器件,在栅极线和数据线的交叉处具有栅极电极,半导体层以及源极和漏极电极; 在包括所述开关装置的所述第一基板的整个表面上的钝化膜; 公共电极和像素电极交替地设置在钝化膜的上部并产生面内电场,其中至少一个公共电极和像素电极在其下端具有第一存储电容器; 以及在第一和第二基板之间的液晶层。
    • 9. 发明授权
    • Transflective liquid crystal display device and method for manufacturing the same
    • 半透射型液晶显示装置及其制造方法
    • US07453537B2
    • 2008-11-18
    • US11116178
    • 2005-04-28
    • Dong Guk KimWon Seok KangJoo Soo Lim
    • Dong Guk KimWon Seok KangJoo Soo Lim
    • G02F1/1335
    • G02F1/136227G02F1/133555G02F1/136213G02F2001/136231G02F2201/40
    • A transflective type LCD device and a method for manufacturing the same is disclosed, in which an aperture ratio of a reflective part is improved, and manufacturing process is simplified by decreasing the number of masks for forming contact holes. The transflective type LCD device includes a plurality of gate and data lines crossing each other, defining a plurality of pixel regions; a thin film transistor at a crossing point of the gate and data lines; a lower storage electrode formed by one portion of a preceding gate line, and an upper storage electrode above the lower storage electrode having a gate insulating layer in between; a transmitting electrode in contact the upper storage electrode; and a reflective electrode in contact with the transmitting electrode in the reflective part of the pixel region wherein the transmitting electrode is in between the reflective electrode and the substrate.
    • 公开了一种透反式LCD装置及其制造方法,其中反射部件的开口率得到改善,并且通过减少形成接触孔的掩模的数量来简化制造工艺。 半透射型LCD装置包括彼此交叉的多个栅极和数据线,限定多个像素区域; 在栅极和数据线的交叉点处的薄膜晶体管; 由前一栅极线的一部分形成的下部存储电极和位于下部存储电极上方的上部存储电极,其间具有栅极绝缘层; 与上部存储电极接触的发射电极; 以及在像素区域的反射部分中与发射电极接触的反射电极,其中发射电极位于反射电极和衬底之间。
    • 10. 发明授权
    • Reflective and transflective liquid crystal display device and its manufacturing method
    • 反射和透反液晶显示装置及其制造方法
    • US06867822B2
    • 2005-03-15
    • US10754532
    • 2004-01-12
    • Dong Guk KimWoong Kwon KimKyoung Su HaHeume Ti BaekYong Beom Kim
    • Dong Guk KimWoong Kwon KimKyoung Su HaHeume Ti BaekYong Beom Kim
    • G02F1/1335G02F1/1362G02F1/1343
    • G02F1/133555G02F1/136213
    • Disclosed are a reflective and transflective liquid crystal display device and its manufacturing method, which can raise light efficiency by removing a depressed part in a reflective device without forming a capacitor contact hole in a storage capacitor. The reflective liquid crystal display device includes: a plurality of gate lines and data lines intersecting on a first substrate, the gate line and the data line defining pixel areas; a thin film transistor formed at the intersection of the gate line and the data line, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode; a capacitor lower electrode of a storage capacitor formed on the same plane as the gate line; an capacitor upper electrode formed integrally with the drain electrode on the capacitor lower electrode; a first insulation film inserted between the capacitor upper electrode and the capacitor lower electrode; and a thin film transistor array substrate connected with the drain electrode and including the reflective electrode formed at the pixel area.
    • 公开了一种反射和半透射型液晶显示装置及其制造方法,其可以通过在反射装置中去除凹陷部而不在存储电容器中形成电容器接触孔来提高光效率。 反射型液晶显示装置包括:与第一基板相交的多条栅极线和数据线,栅极线和数据线限定像素区域; 薄膜晶体管,形成在栅极线和数据线的交点处,薄膜晶体管包括栅电极,半导体层,源电极和漏电极; 形成在与栅极线相同的平面上的存储电容器的电容器下电极; 电容器上电极,与电容器下电极上的漏电极整体形成; 插入电容器上电极和电容器下电极之间的第一绝缘膜; 以及与漏电极连接并且包括形成在像素区域处的反射电极的薄膜晶体管阵列基板。