专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110186545A1 FEEDFORWARD TEMPERATURE CONTROL FOR PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备的前级温度控制
公开(公告)号：US20110186545A1
公开(公告)日：2011-08-04
申请号：US12905624
申请日：2010-10-15
申请人： Chetan MAHADESWARASWAMY , Walter R. MERRY , Sergio Fukuda SHOJI , Chunlei ZHANG , Yashaswini B. PATTAR , Duy D. NGUYEN , Tina TSONG , Shane C. NEVIL , Douglas A. BUCHBERGER, JR. , Fernando M. SILVEIRA , Brad L. MAYS , Kartik RAMASWAMY , Hamid NOORBAKHSH
发明人： Chetan MAHADESWARASWAMY , Walter R. MERRY , Sergio Fukuda SHOJI , Chunlei ZHANG , Yashaswini B. PATTAR , Duy D. NGUYEN , Tina TSONG , Shane C. NEVIL , Douglas A. BUCHBERGER, JR. , Fernando M. SILVEIRA , Brad L. MAYS , Kartik RAMASWAMY , Hamid NOORBAKHSH
IPC分类号： C23F1/08 , C23F1/00 , C23C16/50 , C23C16/458 , C23C16/52 , G05D23/00
CPC分类号： H01J37/32009 , G05B6/02 , H01J37/3244 , H01J37/32715 , H01J37/32935 , H01J2237/334 , H05H1/0081
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

2. 发明授权

US09165804B2 Methods of cooling process chamber components 有权
标题翻译：冷却过程室组件的方法
公开(公告)号：US09165804B2
公开(公告)日：2015-10-20
申请号：US13452292
申请日：2012-04-20
申请人： Chetan Mahadeswaraswamy
发明人： Chetan Mahadeswaraswamy
IPC分类号： H01L23/34 , H01L21/67 , H01J37/32 , H01L23/473
CPC分类号： H01L21/67109 , H01J37/3244 , H01J37/32522 , H01L23/34 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： Methods for cooling process chamber components are provided herein. In some embodiments, a method of cooling a process chamber component may include reducing a power provided to a heater disposed proximate a surface of the process chamber component to reduce an amount of heat provided to the component by the heater; providing a coolant to coolant channels disposed within the process chamber component using a pulsed flow having a duty cycle until the process chamber component reaches a temperature that is less than or equal to a predetermined magnitude above a temperature of the coolant; and after the process chamber component reaches the temperature less than or equal to the predetermined magnitude above a temperature of the coolant, reducing the duty cycle of the pulsed flow of the coolant to zero.
摘要翻译：本文提供了冷却处理室部件的方法。在一些实施例中，冷却处理室部件的方法可以包括减小设置在处理室部件表面附近的加热器的功率，以减少由加热器提供给部件的热量; 使用具有占空比的脉冲流将冷却剂提供给设置在处理室部件内的冷却剂通道，直到处理室部件达到小于或等于超过冷却剂温度的预定大小的温度; 并且在处理室部件达到小于或等于超过冷却剂温度的预定大小的温度时，将冷却剂的脉冲流量的占空比减小到零。

3. 发明申请

US20140083978A1 TEMPERATURE CONTROLLED PLASMA PROCESSING CHAMBER COMPONENT WITH ZONE DEPENDENT THERMAL EFFICIENCES 审中-公开
标题翻译：温度控制等离子体加工室组件，具有相关的热效率
公开(公告)号：US20140083978A1
公开(公告)日：2014-03-27
申请号：US14087976
申请日：2013-11-22
申请人： Chetan Mahadeswaraswamy , Kallol Bera , Larry D. Elizaga
发明人： Chetan Mahadeswaraswamy , Kallol Bera , Larry D. Elizaga
IPC分类号： H01J37/02
CPC分类号： H01J37/02 , F28D2021/0028 , F28F7/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01L21/67069 , H01L21/67109 , H01L21/67248
摘要： Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.
摘要翻译：通过等离子体处理装置执行用于控制作为等离子体处理的工艺或室部件温度的部件和系统。第一传热流体通道设置在位于等离子体处理室内的工作表面的下方的部件中，使得位于工作表面的第一温度区域下方的第一通道的第一长度包括不同的传热系数h，或传热面积A比第一通道的第二长度低于工作表面的第二温度区域。在实施例中，提供不同的传热系数或传热面积作为温度区域的函数，以使第一和第二温度区域的温度控制更独立。

4. 发明授权

US08916793B2 Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow 有权
标题翻译：使用脉冲传热流体流动的等离子体处理装置中的温度控制
公开(公告)号：US08916793B2
公开(公告)日：2014-12-23
申请号：US13111334
申请日：2011-05-19
申请人： Fernando M. Silveira , Hamid Tavassoli , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger , Brad L. Mays , Tina Tsong , Chetan Mahadeswaraswamy , Yashaswini B. Pattar , Duy D. Nguyen , Walter R. Merry
发明人： Fernando M. Silveira , Hamid Tavassoli , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger , Brad L. Mays , Tina Tsong , Chetan Mahadeswaraswamy , Yashaswini B. Pattar , Duy D. Nguyen , Walter R. Merry
IPC分类号： B23K10/00 , H01J37/20 , H01J37/32
CPC分类号： H01J37/20 , H01J37/32724 , H01J37/32908 , H01J37/32926 , H01J37/32935 , H01J2237/2001 , H05H1/34
摘要： Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.
摘要翻译：通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。

5. 发明授权

US08880227B2 Component temperature control by coolant flow control and heater duty cycle control 有权
标题翻译：组件温度控制由冷却液流量控制和加热器占空比控制
公开(公告)号：US08880227B2
公开(公告)日：2014-11-04
申请号：US13040149
申请日：2011-03-03
申请人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
发明人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
IPC分类号： G06F19/00 , H01J37/32 , H01L21/67
CPC分类号： G05D23/19 , G05B15/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01J37/3299 , H01L21/67248
摘要： Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

6. 发明授权

US08608852B2 Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies 有权
标题翻译：具有区域依赖热效率的温度控制等离子体处理室部件
公开(公告)号：US08608852B2
公开(公告)日：2013-12-17
申请号：US13111384
申请日：2011-05-19
申请人： Chetan Mahadeswaraswamy , Kallol Bera , Larry D. Elizaga
发明人： Chetan Mahadeswaraswamy , Kallol Bera , Larry D. Elizaga
IPC分类号： C23C16/00
CPC分类号： H01J37/02 , F28D2021/0028 , F28F7/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01L21/67069 , H01L21/67109 , H01L21/67248
摘要： Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.
摘要翻译：通过等离子体处理装置执行用于控制作为等离子体处理的工艺或室部件温度的部件和系统。第一传热流体通道设置在位于等离子体处理室内的工作表面的下方的部件中，使得位于工作表面的第一温度区域下方的第一通道的第一长度包括不同的传热系数h，或传热区域A比第一通道的第二长度低于工作表面的第二温度区域。在实施例中，提供不同的传热系数或传热面积作为温度区域的函数，以使第一和第二温度区域的温度控制更独立。

7. 发明申请

US20130105084A1 COMPONENT TEMPERATURE CONTROL USING A COMBINATION OF PROPORTIONAL CONTROL VALVES AND PULSED VALVES 审中-公开
标题翻译：使用比例控制阀和脉冲阀组合的组件温度控制
公开(公告)号：US20130105084A1
公开(公告)日：2013-05-02
申请号：US13652257
申请日：2012-10-15
申请人： Chetan MAHADESWARASWAMY
发明人： Chetan MAHADESWARASWAMY
IPC分类号： C23F1/08 , F28F27/02
CPC分类号： H01L21/67109
摘要： Methods and systems for controlling temperatures in plasma processing chamber with a combination of proportional and pulsed fluid control valves. A heat transfer fluid loop is thermally coupled to a chamber component, such as a chuck. The heat transfer fluid loop includes a supply line and a return line to each of hot and cold fluid reservoirs. In an embodiment, an analog valve (e.g., in the supply line) is controlled between any of a closed state, a partially open state, and a fully open state based on a temperature control loop while a digital valve (e.g., in the return line) is controlled to either a closed state and a fully open state.
摘要翻译：用于通过比例和脉冲流体控制阀的组合来控制等离子体处理室中的温度的方法和系统。传热流体回路热耦合到腔室部件，例如卡盘。传热流体回路包括一个供应管线和一个返回管线到每个热和冷流体储存器。在一个实施例中，模拟阀（例如，在供应管线中）在数字阀（例如，在回报中）的基础上，基于温度控制回路在任何闭合状态，部分打开状态和完全打开状态之间进行控制线）被控制为关闭状态和完全打开状态。

8. 发明授权

US09338871B2 Feedforward temperature control for plasma processing apparatus 有权
标题翻译：等离子体处理装置的前馈温度控制
公开(公告)号：US09338871B2
公开(公告)日：2016-05-10
申请号：US12905624
申请日：2010-10-15
申请人： Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
发明人： Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
IPC分类号： G01L21/30 , G01R31/00 , H01L21/302 , H01L21/461 , H01L21/306 , C23F1/00 , H05H1/00 , H01J37/32
CPC分类号： H01J37/32009 , G05B6/02 , H01J37/3244 , H01J37/32715 , H01J37/32935 , H01J2237/334 , H05H1/0081
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

9. 发明申请

US20120273162A1 METHODS OF COOLING PROCESS CHAMBER COMPONENTS 有权
标题翻译：冷却过程室组件的方法
公开(公告)号：US20120273162A1
公开(公告)日：2012-11-01
申请号：US13452292
申请日：2012-04-20
申请人： CHETAN MAHADESWARASWAMY
发明人： CHETAN MAHADESWARASWAMY
IPC分类号： F25B29/00
CPC分类号： H01L21/67109 , H01J37/3244 , H01J37/32522 , H01L23/34 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： Methods for cooling process chamber components are provided herein. In some embodiments, a method of cooling a process chamber component may include reducing a power provided to a heater disposed proximate a surface of the process chamber component to reduce an amount of heat provided to the component by the heater; providing a coolant to coolant channels disposed within the process chamber component using a pulsed flow having a duty cycle until the process chamber component reaches a temperature that is less than or equal to a predetermined magnitude above a temperature of the coolant; and after the process chamber component reaches the temperature less than or equal to the predetermined magnitude above a temperature of the coolant, reducing the duty cycle of the pulsed flow of the coolant to zero.
摘要翻译：本文提供了冷却处理室部件的方法。在一些实施例中，冷却处理室部件的方法可以包括减小设置在处理室部件表面附近的加热器的功率，以减少由加热器提供给部件的热量; 使用具有占空比的脉冲流将冷却剂提供给设置在处理室部件内的冷却剂通道，直到处理室部件达到小于或等于超过冷却剂温度的预定大小的温度; 并且在处理室部件达到小于或等于超过冷却剂温度的预定大小的温度时，将冷却剂的脉冲流量的占空比减小到零。

10. 发明申请

US20120132397A1 TEMPERATURE CONTROL IN PLASMA PROCESSING APPARATUS USING PULSED HEAT TRANSFER FLUID FLOW 有权
标题翻译：使用脉冲热传递流体的等离子体处理装置中的温度控制
公开(公告)号：US20120132397A1
公开(公告)日：2012-05-31
申请号：US13111334
申请日：2011-05-19
申请人： Fernando M. Silveira , Hamid Tavassoli , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger , Brad L. Mays , Tina Tsong , Chetan Mahadeswaraswamy , Yashaswini B. Pattar , Duy D. Nguyen , Walter R. Merry
发明人： Fernando M. Silveira , Hamid Tavassoli , Xiaoping Zhou , Shane C. Nevil , Douglas A. Buchberger , Brad L. Mays , Tina Tsong , Chetan Mahadeswaraswamy , Yashaswini B. Pattar , Duy D. Nguyen , Walter R. Merry
IPC分类号： F28D15/00 , C23C16/52 , B05C13/02 , C23C16/458
CPC分类号： H01J37/20 , H01J37/32724 , H01J37/32908 , H01J37/32926 , H01J37/32935 , H01J2237/2001 , H05H1/34
摘要： Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.
摘要翻译：通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式