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    • 6. 发明授权
    • Write head with high moment film layer having tapered portion extending beyond write gap layer
    • 用具有锥形部分延伸超过写间隙层的高力矩膜层写头
    • US06873494B2
    • 2005-03-29
    • US10134799
    • 2002-04-29
    • Yingjian ChenXiaozhong Dang
    • Yingjian ChenXiaozhong Dang
    • G11B5/31G11B5/39G11B5/40
    • B82Y25/00B82Y10/00G11B5/3106G11B5/313G11B5/3133G11B5/3153G11B5/3163G11B5/40G11B2005/3996
    • An inductive write head structure incorporating a high moment film in conjunction with at least one pole (e.g., the bottom pole) for use with magnetic storage media and a process for producing the same in which a lift-off photoresist mask is used prior to the deposition of the high moment sputtered film. Following the lift-off process, the high moment film remains on the bottom pole (“P1”) pedestal (in the case of a PDZT type write head) or on the P1 itself (in the case of a Stitched Pole write head). The edge of the lift-off sputtered film is then covered by cured photoresist insulation which is placed at a distance away from the air bearing surface (“ABS”). The coverage of insulation at the edge of the sputtered film is desirable in order to avoid forming a topographic step which may have undesired consequences in the subsequent top pole formation processes.
    • 结合至少一个极(例如,底极)与磁存储介质一起使用的高力矩膜的感应写头结构及其制造方法,其中在剥离光刻胶掩模之前使用剥离光致抗蚀剂掩模 沉积高速溅射膜。 在剥离过程之后,高力矩胶片保留在底极(“P1”)底座上(在PDZT型写入头的情况下)或P1本身(在缝合杆写入头的情况下)。 然后,剥离溅射膜的边缘被固定的光致抗蚀剂绝缘体覆盖,该固化的光致抗蚀剂绝缘体被放置在远离空气支承表面(“ABS”)的一定距离处。 在溅射膜的边缘处的绝缘层的覆盖是期望的,以避免形成在随后的顶极形成过程中可能具有不期望的后果的地形步骤。
    • 9. 发明授权
    • Electronic device utilizing magnetic nanotubes
    • 使用磁性纳米管的电子设备
    • US07063753B1
    • 2006-06-20
    • US10611633
    • 2003-07-01
    • Yingjian ChenXiaozhong Dang
    • Yingjian ChenXiaozhong Dang
    • D01F9/12H01L21/00
    • D01F9/127B82Y10/00B82Y25/00B82Y30/00H01L21/76838H01L51/0012H01L51/0048H01L51/0512H01L2221/1094Y10S977/75Y10S977/84Y10S977/888
    • Present invention provides enabling techniques of integrating novel nanotube elements into semiconductor devices, particularly in transistors, as gate channels or/and as interconnects. This is done in a series of process steps, which consist of fabricating magnetic-core-containing nanotubes of selected size (diameter and length), filtration of nanotube powders, preparing nanotube precursor in aqueous chemicals to form colloidal solutions of proper concentration, dispersing nanotube-containing solutions onto wafer surface, and finally positioning nanotubes at desired locations by magnetic means to complete nanotube device structure. The key to this invention is to provide miniature nanotubes with tangible physical properties, in this case, magnetic properties, so that they can be aligned, filtered, and precisely directed to desired locations for device application. Such processes enable nanotubes to be compatible with typical semiconductor wafer processing technologies.
    • 本发明提供了将新型纳米管元件集成到半导体器件中,特别是在晶体管中作为栅极通道或/或作为互连的使能技术。 这是通过一系列工艺步骤完成的,其中包括制造选定尺寸(直径和长度)的含磁芯的纳米管,纳米管粉末的过滤,在含水化学品中制备纳米管前体以形成适当浓度的胶体溶液,分散纳米管 并且最后通过磁性手段将纳米管定位在期望的位置以完成纳米管装置结构。 本发明的关键是提供具有有形物理性能的微型纳米管,在这种情况下是磁性,使得它们可以对准,过滤并精确地定向到所需的位置用于器件应用。 这样的工艺使得纳米管能够与典型的半导体晶片处理技术兼容。
    • 10. 发明授权
    • Nanotube with at least a magnetic nanoparticle attached to the nanotube's exterior sidewall and electronic devices made thereof
    • 具有至少附着在纳米管外侧壁上的磁性纳米颗粒的纳米管和由其制成的电子器件
    • US06987302B1
    • 2006-01-17
    • US10611448
    • 2003-07-01
    • Yingjian ChenXiaozhong Dang
    • Yingjian ChenXiaozhong Dang
    • H01L29/76H01L29/94H01L31/062H01L31/113H01L31/119
    • B82Y10/00B82Y25/00B82Y30/00B82Y40/00C01B32/168G01N27/4146H01F1/0054Y10S977/745Y10S977/936
    • Present invention provides enabling methods of integrating novel nanotube elements into semiconductor devices, such as transistor containing electronic device. This is done in a series of process steps, which consist of attaching magnetic nanoparticles to nanotubes, tailoring magnetic nanotubes of selected size (diameter and length), filtration of nanotube to pre-determined sizes, preparing nanotube precursor in aqueous chemicals to form colloidal solutions of proper concentration, dispersing nanotube-containing solutions onto wafer surface, and finally positioning nanotubes at desired locations by magnetically assisted assembly to complete nanotube device structure. The key to this invention is to provide miniature nanotubes with tangible physical properties, in this case, magnetic properties, so that they can be aligned, filtered, and precisely directed to desired locations for device application. Such processes enable nanotubes to be compatible with typical semiconductor wafer processing technologies.
    • 本发明提供了将新型纳米管元件集成到诸如晶体管的电子器件等半导体器件中的使能方法。 这是通过一系列工艺步骤完成的,其中包括将磁性纳米颗粒附着到纳米管上,调整所选尺寸的磁性纳米管(直径和长度),将纳米管过滤到预定尺寸,在含水化学品中制备纳米管前体以形成胶体溶液 适当浓度,将含纳米管的溶液分散在晶片表面上,最后通过磁辅助组装将纳米管定位在所需位置,以完成纳米管器件结构。 本发明的关键是提供具有有形物理性能的微型纳米管,在这种情况下是磁性,使得它们可以对准,过滤并精确地定向到所需的位置用于器件应用。 这样的工艺使得纳米管能够与典型的半导体晶片处理技术兼容。