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    • 2. 发明授权
    • Tunable-wavelength optical filter and method of manufacturing the same
    • 可调谐波长光学滤波器及其制造方法
    • US07012752B2
    • 2006-03-14
    • US11045554
    • 2005-01-27
    • Chang Auck ChoiMyung Lae LeeChang Kyu KimChi Hoon JunYoun Tae Kim
    • Chang Auck ChoiMyung Lae LeeChang Kyu KimChi Hoon JunYoun Tae Kim
    • G02B27/00
    • G02B26/001G01J3/26G02B5/0833G02B6/29361G02B6/29389G02B6/29395
    • An active type tunable wavelength optical filter having a Fabry-Perot structure is disclosed. A tunable wavelength optical filter which comprises a lower mirror in which silicon films and oxide films are sequentially laminated in a multi-layer and the silicon film is laminated on the highest portion; an upper mirror in which silicon films and oxide films are sequentially laminated in a multi-layer and the silicon film is laminated on the highest portion and which is spaced away from the lower mirror by a predetermined distance; a connecting means for connecting and supporting the lower mirror and the upper mirror to a semiconductor substrate; and electrode pads for controlling the gap between the lower mirror and the upper mirror by an electrostatic force and the method of manufacturing the same are provided. Thereby, by finely driving the upper and lower mirrors composed of a multi-layer structure of the silicon film and the oxide film by the electrostatic force, the wavelength of the transmitted light with respect to the incident light can be selectively sent.
    • 公开了一种具有法布里 - 珀罗结构的有源型可调谐波长滤光器。 一种可调波长滤光器,包括下反射镜,其中硅膜和氧化物膜顺次层叠在多层中,并且硅膜层压在最高部分上; 其中硅膜和氧化物膜顺次层叠在多层中并且硅膜层压在最高部分上并且与下反射镜间隔预定距离的上反射镜; 用于将下反射镜和上反射镜连接和支撑到半导体基板的连接装置; 以及用于通过静电力控制下反射镜和上反射镜之间的间隙的电极焊盘及其制造方法。 由此,通过利用静电力微细地驱动由硅膜和氧化膜构成的上反射镜和下反射镜,可以选择性地发送透射光相对于入射光的波长。
    • 6. 发明授权
    • Tunable-wavelength optical filter and method of manufacturing the same
    • 可调谐波长光学滤波器及其制造方法
    • US07163872B2
    • 2007-01-16
    • US10671825
    • 2003-09-25
    • Chang Auck ChoiMyung Lae LeeChang Kyu KimChi Hoon JunYoun Tae Kim
    • Chang Auck ChoiMyung Lae LeeChang Kyu KimChi Hoon JunYoun Tae Kim
    • H01L21/00
    • G02B26/001G01J3/26G02B5/0833G02B6/29361G02B6/29389G02B6/29395
    • An active type tunable wavelength optical filter having a Fabry-Perot structure is disclosed. A tunable wavelength optical filter which comprises a lower mirror in which silicon films and oxide films are sequentially laminated in a multi-layer and the silicon film is laminated on the highest portion; an upper mirror in which silicon films and oxide films are sequentially laminated in a multi-layer and the silicon film is laminated on the highest portion and which is spaced away from the lower mirror by a predetermined distance; a connecting means for connecting and supporting the lower mirror and the upper mirror to a semiconductor substrate; and electrode pads for controlling the gap between the lower mirror and the upper mirror by an electrostatic force and the method of manufacturing the same are provided. Thereby, by finely driving the upper and lower mirrors composed of a multi-layer structure of the silicon film and the oxide film by the electrostatic force, the wavelength of the transmitted light with respect to the incident light can be selectively sent.
    • 公开了一种具有法布里 - 珀罗结构的有源型可调谐波长滤光器。 一种可调波长滤光器,包括下反射镜,其中硅膜和氧化物膜顺次层叠在多层中,并且硅膜层压在最高部分上; 其中硅膜和氧化物膜顺次层叠在多层中并且硅膜层压在最高部分上并且与下反射镜间隔预定距离的上反射镜; 用于将下反射镜和上反射镜连接和支撑到半导体基板的连接装置; 以及用于通过静电力控制下反射镜和上反射镜之间的间隙的电极焊盘及其制造方法。 由此,通过利用静电力微细地驱动由硅膜和氧化膜构成的上反射镜和下反射镜,可以有选择地发射透射光相对于入射光的波长。
    • 7. 发明授权
    • Method of fabricating microchannel array structure embedded in silicon substrate
    • 制造嵌入硅衬底的微通道阵列结构的方法
    • US06582987B2
    • 2003-06-24
    • US10022093
    • 2001-12-14
    • Chi Hoon JunChang Auck ChoiYoun Tae Kim
    • Chi Hoon JunChang Auck ChoiYoun Tae Kim
    • H01L2100
    • B81C1/00119B81B2201/0214B81B2201/058
    • The present invention is disclosed a microchannel array structure embedded in a silicon substrate and a fabrication method thereof. The microchannel array structure of the present invention is formed deep inside the substrate and has high-density microscopic micro-channels. Besides, going through surface micromachining, physical and chemical properties of the silicon substrate are hardly influenced by the fabrication procedures. With microchannels buried in the substrate, the top of a microchannel array structure becomes flat, minimizing the effect of step height. That way, additional devices such as passive components, micro sensors, micro actuators and electronic devices can be easily integrated onto the microchannel array structure. The microchannel array structure of the present invention can be employed as a basic fluidic platform for miniaturizing and improving perfomances of electronic device coolers as well as such fluidic micro-electro-mechanical system (MEMS) devices as biochips, microfluidic components and chemical analyzers, lab-on-a-chips, polymerase chain reaction (PCR) amplifiers, micro reactors and drug delivery systems.
    • 本发明公开了一种嵌入硅衬底的微通道阵列结构及其制造方法。 本发明的微通道阵列结构形成在衬底的内部,并且具有高密度微观微通道。 此外,通过表面微加工,硅衬底的物理和化学性质几乎不受制造程序的影响。 由于微通道埋在基板中,微通道阵列结构的顶部变得平坦,从而最小化台阶高度的影响。 这样,诸如无源组件,微传感器,微执行器和电子设备的附加设备可以容易地集成到微通道阵列结构上。 本发明的微通道阵列结构可用作电子装置冷却器的微型化和改进的基本流体平台,以及诸如生物芯片,微流体组件和化学分析仪的实验室的这种流体微机电系统(MEMS)装置 - 聚合酶链反应(PCR)放大器,微反应器和药物递送系统。
    • 8. 发明授权
    • Humidity sensor and method of manufacturing the same
    • 湿度传感器及其制造方法
    • US08047074B2
    • 2011-11-01
    • US12617701
    • 2009-11-12
    • Chi Hoon JunSang Choon KoChang Auck ChoiByoung Gon Yu
    • Chi Hoon JunSang Choon KoChang Auck ChoiByoung Gon Yu
    • G01N27/12
    • G01N27/121
    • Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.The humidity sensor includes a substrate, an open cavity with an open upper portion formed to have a depth and a width in the substrate, a plurality of electrode pads formed on the substrate, a heater connected to one pad of the electrode pads at one end, and connected to another pad of the electrode pads at the other end to be suspended over the open cavity, a plurality of sensing electrodes formed on the same plane as the heater, and suspended over the open cavity to output a sensed signal to the electrode pads, a humidity sensitive layer formed on the heater and the sensing electrodes, suspended over the open cavity, and changed in characteristic according to the humidity, and an ambient temperature measurement part configured to measure the temperature around the humidity sensor, wherein the temperature is used as a reference temperature to control a heating temperature of the heater.
    • 提供了一种湿度传感器及其制造方法。 湿度传感器灵敏度高,响应时间快,温度特性好,滞后小,耐久性好。 此外,对于湿度传感器,湿度敏感层可以由各种材料形成。 湿度传感器可以大规模制造。 湿度传感器包括基底,具有形成为在基底中具有深度和宽度的敞开上部的开口腔,形成在基底上的多个电极垫,一端连接到电极垫的一个垫 并且在另一端连接到电极焊盘的另一焊盘以悬挂在开放空腔上,多个感测电极形成在与加热器相同的平面上,并且悬挂在开放空腔上以将感测到的信号输出到电极 衬垫,形成在加热器上的湿度敏感层和悬挂在开放空腔上的感测电极,并且根据湿度改变特性;以及环境温度测量部件,被配置为测量湿度传感器周围的温度,其中温度为 用作参考温度来控制加热器的加热温度。
    • 9. 发明申请
    • HIGH-SENSITIVITY Z-AXIS VIBRATION SENSOR AND METHOD OF FABRICATING THE SAME
    • 高灵敏度Z轴振动传感器及其制造方法
    • US20100132467A1
    • 2010-06-03
    • US12509360
    • 2009-07-24
    • Sang Choon KoChi Hoon JunByoung Gon YuChang Auck Choi
    • Sang Choon KoChi Hoon JunByoung Gon YuChang Auck Choi
    • G01P15/125H01L21/306
    • G01P15/0802G01H11/06G01P1/023G01P15/125H04R19/005
    • Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.
    • 提供了一种高灵敏度的MEMS型z轴振动传感器,其可以通过将掺杂的上硅层和上电极之间的电容从正向或者反向偏移来感测z轴振动,当中心质量为 掺杂多晶硅层由于z轴振动而移动。 特别地,由于掺杂的上硅层的一部分另外连接到掺杂多晶硅层的中心质量块,因此由掺杂多晶硅层的中心质量造成的误差最小化,可以敏感地响应低的振动弱 频率如地震波。 因此,由于高灵敏度的MEMS型z轴振动传感器对低频带中的少量振动敏感地作出响应,因此可以应用于地震仪中,以便感测具有极小振动频率的低频地震波 和低振动速度。 此外,由于高灵敏度的MEMS型z轴振动传感器具有比相同尺寸的MEMS型z轴振动传感器更高的振动灵敏度,所以在逐渐减小的电子设备中是有用的。