专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08047074B2 Humidity sensor and method of manufacturing the same 有权
标题翻译：湿度传感器及其制造方法
公开(公告)号：US08047074B2
公开(公告)日：2011-11-01
申请号：US12617701
申请日：2009-11-12
申请人： Chi Hoon Jun , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
发明人： Chi Hoon Jun , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
IPC分类号： G01N27/12
CPC分类号： G01N27/121
摘要： Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.The humidity sensor includes a substrate, an open cavity with an open upper portion formed to have a depth and a width in the substrate, a plurality of electrode pads formed on the substrate, a heater connected to one pad of the electrode pads at one end, and connected to another pad of the electrode pads at the other end to be suspended over the open cavity, a plurality of sensing electrodes formed on the same plane as the heater, and suspended over the open cavity to output a sensed signal to the electrode pads, a humidity sensitive layer formed on the heater and the sensing electrodes, suspended over the open cavity, and changed in characteristic according to the humidity, and an ambient temperature measurement part configured to measure the temperature around the humidity sensor, wherein the temperature is used as a reference temperature to control a heating temperature of the heater.
摘要翻译：提供了一种湿度传感器及其制造方法。湿度传感器灵敏度高，响应时间快，温度特性好，滞后小，耐久性好。此外，对于湿度传感器，湿度敏感层可以由各种材料形成。湿度传感器可以大规模制造。湿度传感器包括基底，具有形成为在基底中具有深度和宽度的敞开上部的开口腔，形成在基底上的多个电极垫，一端连接到电极垫的一个垫并且在另一端连接到电极焊盘的另一焊盘以悬挂在开放空腔上，多个感测电极形成在与加热器相同的平面上，并且悬挂在开放空腔上以将感测到的信号输出到电极衬垫，形成在加热器上的湿度敏感层和悬挂在开放空腔上的感测电极，并且根据湿度改变特性;以及环境温度测量部件，被配置为测量湿度传感器周围的温度，其中温度为用作参考温度来控制加热器的加热温度。

2. 发明申请

US20100147070A1 HUMIDITY SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：湿度传感器及其制造方法
公开(公告)号：US20100147070A1
公开(公告)日：2010-06-17
申请号：US12617701
申请日：2009-11-12
申请人： Chi Hoon JUN , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
发明人： Chi Hoon JUN , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
IPC分类号： G01N19/10 , B05D5/12 , B44C1/22
CPC分类号： G01N27/121
摘要： Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.The humidity sensor includes a substrate, an open cavity with an open upper portion formed to have a depth and a width in the substrate, a plurality of electrode pads formed on the substrate, a heater connected to one pad of the electrode pads at one end, and connected to another pad of the electrode pads at the other end to be suspended over the open cavity, a plurality of sensing electrodes formed on the same plane as the heater, and suspended over the open cavity to output a sensed signal to the electrode pads, a humidity sensitive layer formed on the heater and the sensing electrodes, suspended over the open cavity, and changed in characteristic according to the humidity, and an ambient temperature measurement part configured to measure the temperature around the humidity sensor, wherein the temperature is used as a reference temperature to control a heating temperature of the heater.
摘要翻译：提供了一种湿度传感器及其制造方法。湿度传感器灵敏度高，响应时间快，温度特性好，滞后小，耐久性好。此外，对于湿度传感器，湿度敏感层可以由各种材料形成。湿度传感器可以大规模制造。湿度传感器包括基底，具有形成为在基底中具有深度和宽度的敞开上部的开口腔，形成在基底上的多个电极垫，一端连接到电极垫的一个垫并且在另一端连接到电极焊盘的另一焊盘以悬挂在开放空腔上，多个感测电极形成在与加热器相同的平面上，并且悬挂在开放空腔上以将感测到的信号输出到电极衬垫，形成在加热器上的湿度敏感层和悬挂在开放空腔上的感测电极，并且根据湿度改变特性;以及环境温度测量部件，被配置为测量湿度传感器周围的温度，其中温度为用作参考温度来控制加热器的加热温度。

3. 发明授权

US08263426B2 High-sensitivity z-axis vibration sensor and method of fabricating the same 失效
标题翻译：高灵敏度z轴振动传感器及其制造方法
公开(公告)号：US08263426B2
公开(公告)日：2012-09-11
申请号：US12509360
申请日：2009-07-24
申请人： Sang Choon Ko , Chi Hoon Jun , Byoung Gon Yu , Chang Auck Choi
发明人： Sang Choon Ko , Chi Hoon Jun , Byoung Gon Yu , Chang Auck Choi
IPC分类号： H01L21/00
CPC分类号： G01P15/0802 , G01H11/06 , G01P1/023 , G01P15/125 , H04R19/005
摘要： Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.
摘要翻译：提供了一种高灵敏度的MEMS型z轴振动传感器，其可以通过将掺杂的上硅层和上电极之间的电容从正向或者反向偏移来感测z轴振动，当中心质量为掺杂多晶硅层由于z轴振动而移动。特别地，由于掺杂的上硅层的一部分另外连接到掺杂多晶硅层的中心质量块，因此由掺杂多晶硅层的中心质量造成的误差最小化，可以敏感地响应低的振动弱频率如地震波。因此，由于高灵敏度的MEMS型z轴振动传感器对低频带中的少量振动敏感地作出响应，因此可以应用于地震仪中，以便感测具有极小振动频率的低频地震波和低振动速度。此外，由于高灵敏度的MEMS型z轴振动传感器具有比相同尺寸的MEMS型z轴振动传感器更高的振动灵敏度，所以在逐渐减小的电子设备中是有用的。

4. 发明申请

US20100132467A1 HIGH-SENSITIVITY Z-AXIS VIBRATION SENSOR AND METHOD OF FABRICATING THE SAME 失效
标题翻译：高灵敏度Z轴振动传感器及其制造方法
公开(公告)号：US20100132467A1
公开(公告)日：2010-06-03
申请号：US12509360
申请日：2009-07-24
申请人： Sang Choon Ko , Chi Hoon Jun , Byoung Gon Yu , Chang Auck Choi
发明人： Sang Choon Ko , Chi Hoon Jun , Byoung Gon Yu , Chang Auck Choi
IPC分类号： G01P15/125 , H01L21/306
CPC分类号： G01P15/0802 , G01H11/06 , G01P1/023 , G01P15/125 , H04R19/005
摘要： Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.
摘要翻译：提供了一种高灵敏度的MEMS型z轴振动传感器，其可以通过将掺杂的上硅层和上电极之间的电容从正向或者反向偏移来感测z轴振动，当中心质量为掺杂多晶硅层由于z轴振动而移动。特别地，由于掺杂的上硅层的一部分另外连接到掺杂多晶硅层的中心质量块，因此由掺杂多晶硅层的中心质量造成的误差最小化，可以敏感地响应低的振动弱频率如地震波。因此，由于高灵敏度的MEMS型z轴振动传感器对低频带中的少量振动敏感地作出响应，因此可以应用于地震仪中，以便感测具有极小振动频率的低频地震波和低振动速度。此外，由于高灵敏度的MEMS型z轴振动传感器具有比相同尺寸的MEMS型z轴振动传感器更高的振动灵敏度，所以在逐渐减小的电子设备中是有用的。

5. 发明授权

US07884328B2 Microbolometer with improved mechanical stability and method of manufacturing the same 失效
标题翻译：具有改善机械稳定性的微热辐射计及其制造方法
公开(公告)号：US07884328B2
公开(公告)日：2011-02-08
申请号：US12181871
申请日：2008-07-29
申请人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： H01L27/14
CPC分类号： G01J5/20 , B81B3/007 , B81B2201/0207 , B81B2203/0118 , G01J5/02 , G01J5/023 , G01J5/024
摘要： Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.
摘要翻译：本发明提供一种具有悬臂结构的微电热计及其制造方法，特别是具有三维悬臂结构的微电热计，其从传统的二维悬臂结构得到改进，及其制造方法。该方法包括提供包括读出集成电路和用于形成吸收结构的反射层的衬底，在衬底上形成牺牲层，在牺牲层中形成具有不均匀横截面的悬臂结构，形成传感器部分通过悬臂结构从衬底隔离，并去除牺牲层。

6. 发明申请

US20090140148A1 BOLOMETER AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：测量仪及其制造方法
公开(公告)号：US20090140148A1
公开(公告)日：2009-06-04
申请号：US12181893
申请日：2008-07-29
申请人： Woo Seok Yang , Seong Mok Cho , Ho Jun Ryu , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Woo Seok Yang , Seong Mok Cho , Ho Jun Ryu , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： H01L27/14 , H01L21/00
CPC分类号： G01J5/20
摘要： A bolometer having decreased noise and increased temperature sensitivity and a method of manufacturing the same are provided. The bolometer has a resistive layer formed of single crystalline silicon (Si) or silicon germanium (Si1-xGex, x=0.2˜0.5) having high crystallinity, such that 1/f noise can be reduced and temperature sensitivity can be significantly improved compared to a conventional amorphous silicon bolometer.
摘要翻译：提供了具有降低的噪声和增加的温度敏感度的辐射热量计及其制造方法。测辐射热计具有由具有高结晶度的单晶硅（Si）或硅锗（Si1-xGex，x = 0.2〜0.5）形成的电阻层，使得1 / f噪声可以降低，并且与一种常规的非晶硅测辐射热计。

7. 发明授权

US07667202B2 Multilayer-structured bolometer and method of fabricating the same 失效
标题翻译：多层结构测辐射热计及其制造方法
公开(公告)号：US07667202B2
公开(公告)日：2010-02-23
申请号：US12182456
申请日：2008-07-30
申请人： Sang Hoon Cheon , Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Byoung Gon Yu , Chang Auck Choi
发明人： Sang Hoon Cheon , Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Byoung Gon Yu , Chang Auck Choi
IPC分类号： G01J5/20
CPC分类号： G01J5/20 , G01J5/02 , G01J5/023
摘要： Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.
摘要翻译：提供一种多层结构的测辐射热计及其制造方法。在多层结构的测辐射热计中，支撑传感器结构的主体的支撑臂的数量减少到一个，并且在一个支撑臂上形成两个电极。因此，传感器结构通过仅一个支撑臂与基板电连接。根据多层结构的测辐射热计和制造测辐射热计的方法，传感器结构的导热性显着降低，显着提高了对温度的敏感性，还减小了测辐射热计的像素尺寸以获得高分辨率的热图像。此外，由于具有足够大的红外线吸收层，多层结构的测辐射热计可以具有高的填充因子，因此可以提高红外吸收。

8. 发明授权

US07696478B2 Resistive materials for microbolometer, method for preparation of resistive materials and microbolometer containing the resistive materials 失效
标题翻译：微电热计的电阻材料，电阻材料的制备方法和含电阻材料的微电热计
公开(公告)号：US07696478B2
公开(公告)日：2010-04-13
申请号：US12182496
申请日：2008-07-30
申请人： Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： G01J5/00
CPC分类号： G01J5/20 , C22C1/04 , C23C14/14 , C23C14/3464
摘要： Provided are resistive materials for a microbolometer, a method for preparation of resistive materials and a microbolometer containing the resistive materials. The resistive materials for the microbolometer include an alloy of silicon and antimony or an alloy of silicon, antimony and germanium, which has a high TCR and a low resistance.
摘要翻译：提供了用于微电热计的电阻材料，用于制备电阻材料的方法和包含电阻材料的微电热计。用于微热辐射计的电阻材料包括硅和锑的合金或硅，锑和锗的合金，其具有高TCR和低电阻。

9. 发明申请

US20090152467A1 MULTILAYER-STRUCTURED BOLOMETER AND METHOD OF FABRICATING THE SAME 失效
标题翻译：多层结构的玻璃及其制造方法
公开(公告)号：US20090152467A1
公开(公告)日：2009-06-18
申请号：US12182456
申请日：2008-07-30
申请人： Sang Hoon Cheon , Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Byoung Gon Yu , Chang Auck Choi
发明人： Sang Hoon Cheon , Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Byoung Gon Yu , Chang Auck Choi
IPC分类号： G01J5/10 , H01L21/00
CPC分类号： G01J5/20 , G01J5/02 , G01J5/023
摘要： Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.
摘要翻译：提供一种多层结构的测辐射热计及其制造方法。在多层结构的测辐射热计中，支撑传感器结构的主体的支撑臂的数量减少到一个，并且在一个支撑臂上形成两个电极。因此，传感器结构通过仅一个支撑臂与基板电连接。根据多层结构的测辐射热计和制造测辐射热计的方法，传感器结构的导热性显着降低，显着提高了对温度的敏感性，还减小了测辐射热计的像素尺寸以获得高分辨率的热图像。此外，由于具有足够大的红外线吸收层，多层结构的测辐射热计可以具有高的填充因子，因此可以提高红外吸收。

10. 发明申请

US20090152466A1 MICROBOLOMETER WITH IMPROVED MECHANICAL STABILITY AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：具有改进的机械稳定性的微型测量仪及其制造方法
公开(公告)号：US20090152466A1
公开(公告)日：2009-06-18
申请号：US12181871
申请日：2008-07-29
申请人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： H01L27/14
CPC分类号： G01J5/20 , B81B3/007 , B81B2201/0207 , B81B2203/0118 , G01J5/02 , G01J5/023 , G01J5/024
摘要： Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.
摘要翻译：本发明提供一种具有悬臂结构的微电热计及其制造方法，特别是具有三维悬臂结构的微电热计，其从传统的二维悬臂结构得到改进，及其制造方法。该方法包括提供包括读出集成电路和用于形成吸收结构的反射层的衬底，在衬底上形成牺牲层，在牺牲层中形成具有不均匀横截面的悬臂结构，形成传感器部分通过悬臂结构从衬底隔离，并去除牺牲层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式