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1. 发明授权

US07012752B2 Tunable-wavelength optical filter and method of manufacturing the same 有权
标题翻译：可调谐波长光学滤波器及其制造方法
公开(公告)号：US07012752B2
公开(公告)日：2006-03-14
申请号：US11045554
申请日：2005-01-27
申请人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
发明人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
IPC分类号： G02B27/00
CPC分类号： G02B26/001 , G01J3/26 , G02B5/0833 , G02B6/29361 , G02B6/29389 , G02B6/29395
摘要： An active type tunable wavelength optical filter having a Fabry-Perot structure is disclosed. A tunable wavelength optical filter which comprises a lower mirror in which silicon films and oxide films are sequentially laminated in a multi-layer and the silicon film is laminated on the highest portion; an upper mirror in which silicon films and oxide films are sequentially laminated in a multi-layer and the silicon film is laminated on the highest portion and which is spaced away from the lower mirror by a predetermined distance; a connecting means for connecting and supporting the lower mirror and the upper mirror to a semiconductor substrate; and electrode pads for controlling the gap between the lower mirror and the upper mirror by an electrostatic force and the method of manufacturing the same are provided. Thereby, by finely driving the upper and lower mirrors composed of a multi-layer structure of the silicon film and the oxide film by the electrostatic force, the wavelength of the transmitted light with respect to the incident light can be selectively sent.
摘要翻译：公开了一种具有法布里 - 珀罗结构的有源型可调谐波长滤光器。一种可调波长滤光器，包括下反射镜，其中硅膜和氧化物膜顺次层叠在多层中，并且硅膜层压在最高部分上; 其中硅膜和氧化物膜顺次层叠在多层中并且硅膜层压在最高部分上并且与下反射镜间隔预定距离的上反射镜; 用于将下反射镜和上反射镜连接和支撑到半导体基板的连接装置; 以及用于通过静电力控制下反射镜和上反射镜之间的间隙的电极焊盘及其制造方法。由此，通过利用静电力微细地驱动由硅膜和氧化膜构成的上反射镜和下反射镜，可以选择性地发送透射光相对于入射光的波长。

2. 发明授权

US06947656B2 Variable optical attenuator with tunable wavelength selectivity 有权
公开(公告)号：US06947656B2
公开(公告)日：2005-09-20
申请号：US10412580
申请日：2003-04-14
申请人： Chang-Kyu Kim , Myung Lae Lee , Chi Hoon Jun , Chang Auck Choi , Youn Tae Kim
发明人： Chang-Kyu Kim , Myung Lae Lee , Chi Hoon Jun , Chang Auck Choi , Youn Tae Kim
IPC分类号： G02B26/02 , G02B6/26 , G02B6/34 , G02B6/35 , G02B6/00
CPC分类号： G02B6/352 , G02B6/266 , G02B6/29358 , G02B6/29389 , G02B6/29395 , G02B6/3514 , G02B6/3552 , G02B6/356 , G02B6/357 , G02B6/3572 , G02B6/3576 , G02B6/3578 , G02B6/3594
摘要： A variable optical attenuator with tunable wavelength selectivity includes at least two reflectors disposed parallel to each other at a predetermined angle from an optic axis and driving units connected to said at least two reflectors for allowing the reflectors to move back and forth in a direction perpendicular or parallel to the optic axis or to revolve centering on an axis perpendicular or parallel to the optic axis. Since the variable optical attenuator of the present invention serves as a variable optical attenuator and, at the same time, as a tunable wavelength filter, problems of insertion loss and optical alignment that might be caused by separately installing a variable optical attenuator and a wavelength filter can be effectively prevented. Moreover, by implementing the variable optical attenuator and the tunable wavelength filter by using a single device, the size of a system using the optical attenuator can be reduced.

3. 再颁专利

USRE44356E1 Tunable-wavelength optical filter and method of manufacturing the same 有权
标题翻译：可调谐波长光学滤波器及其制造方法
公开(公告)号：USRE44356E1
公开(公告)日：2013-07-09
申请号：US12828908
申请日：2010-07-01
申请人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
发明人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
IPC分类号： H01L21/302 , B29D11/00
CPC分类号： G02B26/001 , G01J3/26 , G02B5/0833 , G02B6/29361 , G02B6/29389 , G02B6/29395
摘要： A method of manufacturing a tunable wavelength optical filter. The method includes steps of forming a first sacrificial oxide film for floating a lower mirror on a semiconductor substrate; sequentially laminating conductive silicon films and oxide films for defining a mirror region on the first sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form a lower mirror; sequentially laminating conductive silicon films and oxide films for defining the mirror region on a second sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form an upper mirror and forming an optical tuning space between the lower mirror and the upper mirror and etching the first sacrificial oxide film and the second sacrificial oxide film such that the lower mirror is floated on the semiconductor substrate.
摘要翻译：一种可调波长光学滤波器的制造方法。该方法包括以下步骤：在半导体衬底上形成用于浮置下反射镜的第一牺牲氧化膜; 依次层叠导电硅膜和用于在多层中在第一牺牲氧化膜上限定反射镜区域的氧化物膜，并层叠另一导电硅膜以形成下反射镜; 依次层叠导电硅膜和用于在多层中的第二牺牲氧化膜上限定反射镜区域的氧化物膜，并层叠另一导电硅膜以形成上反射镜并在下反射镜和上反射镜之间形成光学调谐空间，以及蚀刻第一牺牲氧化物膜和第二牺牲氧化物膜，使得下反射镜浮在半导体衬底上。

4. 发明授权

US07393793B2 Tunable-wavelength optical filter and method of manufacturing the same 有权
标题翻译：可调谐波长光学滤波器及其制造方法
公开(公告)号：US07393793B2
公开(公告)日：2008-07-01
申请号：US11508017
申请日：2006-08-21
申请人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
发明人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
IPC分类号： H01L21/302
CPC分类号： G02B26/001 , G01J3/26 , G02B5/0833 , G02B6/29361 , G02B6/29389 , G02B6/29395
摘要： A method of manufacturing a tunable wavelength optical filter. The method includes steps of forming a first sacrificial oxide film for floating a lower mirror on a semiconductor substrate; sequentially laminating conductive silicon films and oxide films for defining a mirror region on the first sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form a lower mirror; sequentially laminating conductive silicon films and oxide films for defining the mirror region on a second sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form an upper mirror and forming an optical tuning space between the lower mirror and the upper mirror and etching the first sacrificial oxide film and the second sacrificial oxide film such that the lower mirror is floated on the semiconductor substrate.
摘要翻译：一种可调波长光学滤波器的制造方法。该方法包括以下步骤：在半导体衬底上形成用于浮置下反射镜的第一牺牲氧化膜; 依次层叠导电硅膜和用于在多层中在第一牺牲氧化膜上限定反射镜区域的氧化物膜，并层叠另一导电硅膜以形成下反射镜; 依次层叠导电硅膜和用于在多层中的第二牺牲氧化膜上限定反射镜区域的氧化物膜，并层叠另一导电硅膜以形成上反射镜并在下反射镜和上反射镜之间形成光学调谐空间，以及蚀刻第一牺牲氧化物膜和第二牺牲氧化物膜，使得下反射镜浮在半导体衬底上。

5. 发明授权

US07163872B2 Tunable-wavelength optical filter and method of manufacturing the same 有权
标题翻译：可调谐波长光学滤波器及其制造方法
公开(公告)号：US07163872B2
公开(公告)日：2007-01-16
申请号：US10671825
申请日：2003-09-25
申请人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
发明人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
IPC分类号： H01L21/00
CPC分类号： G02B26/001 , G01J3/26 , G02B5/0833 , G02B6/29361 , G02B6/29389 , G02B6/29395
摘要： An active type tunable wavelength optical filter having a Fabry-Perot structure is disclosed. A tunable wavelength optical filter which comprises a lower mirror in which silicon films and oxide films are sequentially laminated in a multi-layer and the silicon film is laminated on the highest portion; an upper mirror in which silicon films and oxide films are sequentially laminated in a multi-layer and the silicon film is laminated on the highest portion and which is spaced away from the lower mirror by a predetermined distance; a connecting means for connecting and supporting the lower mirror and the upper mirror to a semiconductor substrate; and electrode pads for controlling the gap between the lower mirror and the upper mirror by an electrostatic force and the method of manufacturing the same are provided. Thereby, by finely driving the upper and lower mirrors composed of a multi-layer structure of the silicon film and the oxide film by the electrostatic force, the wavelength of the transmitted light with respect to the incident light can be selectively sent.
摘要翻译：公开了一种具有法布里 - 珀罗结构的有源型可调谐波长滤光器。一种可调波长滤光器，包括下反射镜，其中硅膜和氧化物膜顺次层叠在多层中，并且硅膜层压在最高部分上; 其中硅膜和氧化物膜顺次层叠在多层中并且硅膜层压在最高部分上并且与下反射镜间隔预定距离的上反射镜; 用于将下反射镜和上反射镜连接和支撑到半导体基板的连接装置; 以及用于通过静电力控制下反射镜和上反射镜之间的间隙的电极焊盘及其制造方法。由此，通过利用静电力微细地驱动由硅膜和氧化膜构成的上反射镜和下反射镜，可以有选择地发射透射光相对于入射光的波长。

6. 发明授权

US08261617B2 Micro piezoresistive pressure sensor and manufacturing method thereof 有权
标题翻译：微压阻式压力传感器及其制造方法
公开(公告)号：US08261617B2
公开(公告)日：2012-09-11
申请号：US12745745
申请日：2008-04-21
申请人： Chang Auck Choi , Chang Han Je , Gunn Hwang , Youn Tae Kim , Sung Hae Jung , Myung Lae Lee , Sung Sik Lee , Seok Hwan Moon
发明人： Chang Auck Choi , Chang Han Je , Gunn Hwang , Youn Tae Kim , Sung Hae Jung , Myung Lae Lee , Sung Sik Lee , Seok Hwan Moon
IPC分类号： G01L9/06 , B23P17/04
CPC分类号： G01L9/0042 , Y10T29/42 , Y10T29/49
摘要： A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.
摘要翻译：提供一种微型半导体型压力传感器及其制造方法。微型半导体型压力传感器通过蚀刻衬底的空腔形成区域以形成多个沟槽来实现，通过热氧化工艺氧化多个沟槽以形成空腔形成氧化物层，形成膜在形成空腔的氧化物层和衬底的上部上形成一层形成材料层，在膜形成材料层中形成多个蚀刻孔，通过多个蚀刻孔去除腔形成氧化物层，以形成埋入腔在所述基板中，在所述膜形成材料层的上部形成膜增强层，以形成用于封闭所述空腔的膜，并且在所述膜的上部形成由压阻材料制成的敏感膜。

7. 发明申请

US20100251826A1 MICRO PIEZORESISTIVE PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：微型PIEZORESISTIVE压力传感器及其制造方法
公开(公告)号：US20100251826A1
公开(公告)日：2010-10-07
申请号：US12745745
申请日：2008-04-21
申请人： Chang Auck Choi , Chang Han Je , Gunn Hwang , Youn Tae Kim , Sung Hae Jung , Myung Lae Lee , Sung Sik Lee , Seok Hwan Moon
发明人： Chang Auck Choi , Chang Han Je , Gunn Hwang , Youn Tae Kim , Sung Hae Jung , Myung Lae Lee , Sung Sik Lee , Seok Hwan Moon
IPC分类号： G01L9/06 , H01L41/22
CPC分类号： G01L9/0042 , Y10T29/42 , Y10T29/49
摘要： A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.
摘要翻译：提供一种微型半导体型压力传感器及其制造方法。微型半导体型压力传感器通过蚀刻衬底的空腔形成区域以形成多个沟槽来实现，通过热氧化工艺氧化多个沟槽以形成空腔形成氧化物层，形成膜在形成空腔的氧化物层和衬底的上部上形成一层形成材料层，在膜形成材料层中形成多个蚀刻孔，通过多个蚀刻孔去除腔形成氧化物层，以形成埋入腔在所述基板中，在所述膜形成材料层的上部形成膜增强层，以形成用于封闭所述空腔的膜，并且在所述膜的上部形成由压阻材料制成的敏感膜。

8. 发明授权

US06896780B2 Microelectrode, microelectrode array and method for manufacturing the microelectrode 有权
标题翻译：微电极，微电极阵列及微电极制造方法
公开(公告)号：US06896780B2
公开(公告)日：2005-05-24
申请号：US10020774
申请日：2001-12-11
申请人： Hae Sik Yang , Chi Hoon Jun , Chang Auck Choi , Youn Tae Kim
发明人： Hae Sik Yang , Chi Hoon Jun , Chang Auck Choi , Youn Tae Kim
IPC分类号： B81B7/04 , B01J19/00 , G01N27/403 , G01N27/28 , G01N27/327
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00853 , B01J2219/00873 , G01N27/403
摘要： The present invention relates to a microelectrode, a microelectrode array, and a method of manufacturing the microelectrode of which temperature can be controlled. The microelectrode comprises a sealed cavity formed in a silicon substrate for thermal isolation, a microheater formed on the sealed cavity, and an electrode heated indirectly by the microheater. According to the present invention, it is possible to manufacture with CMOS process the microelectrode and the microelectrode array which have excellent electric insulation and thermal isolation between a microheater and a silicon substrate, which has a small power consumption, which has high heating and cooling speed and which has no corrosion.
摘要翻译：本发明涉及一种微电极，微电极阵列，以及可以控制温度的微电极的制造方法。微电极包括形成在用于热隔离的硅衬底中的密封空腔，形成在密封空腔上的微加热器和由微加热器间接加热的电极。根据本发明，可以通过CMOS工艺制造微电极和微电极阵列，其在微加热器和硅基板之间具有优异的电绝缘和热隔离，其功耗小，具有高的加热和冷却速度没有腐蚀。

9. 发明授权

US06822776B2 Scanning micromirror for optical communication systems and method of manufacturing the same 有权
公开(公告)号：US06822776B2
公开(公告)日：2004-11-23
申请号：US10308137
申请日：2002-12-03
申请人： Doo-Young Hah , Ho-Jun Ryu , Chang-Auck Choi , Chi-Hoon Jun , Youn Tae Kim
发明人： Doo-Young Hah , Ho-Jun Ryu , Chang-Auck Choi , Chi-Hoon Jun , Youn Tae Kim
IPC分类号： G02B2608
CPC分类号： G02B6/3518 , G02B6/3556 , G02B6/357 , G02B6/3584 , G02B26/0841 , Y10S359/90
摘要： The present invention relates to a scanning micromirror for optical communications. The scanning micromirror comprises an outer frame having an aperture therein, an inner frame located within the aperture of the outer frame and having an aperture therein, an optical reflecting means located within the aperture of the inner frame, a plurality of first torsion springs connected between an inner wall of the outer frame and an outer wall of the inner frame, for supporting the inner frame, a plurality of second torsion springs connected between the inner wall of the inner frame and the optical reflecting means, for supporting the optical reflecting means, first comb-type electrostatic actuators for applying electrostatic torque by which the inner frame is rotated about an axis of the first torsion springs, and second comb-type electrostatic actuators for applying electrostatic torque by which the optical reflecting means is rotated about an axis of the second torsion springs. Therefore, as the present invention uses vertical comb-type electrostatic actuators, an available rotation angle can be made large compared to a conventional case using a parallel-plate type electrostatic actuator. As the vertical asymmetry of the fixed combs and the movable combs are large, a large rotation angle can be obtained in non-resonant mode as well as resonant mode.

10. 发明授权

US06582987B2 Method of fabricating microchannel array structure embedded in silicon substrate 有权
标题翻译：制造嵌入硅衬底的微通道阵列结构的方法
公开(公告)号：US06582987B2
公开(公告)日：2003-06-24
申请号：US10022093
申请日：2001-12-14
申请人： Chi Hoon Jun , Chang Auck Choi , Youn Tae Kim
发明人： Chi Hoon Jun , Chang Auck Choi , Youn Tae Kim
IPC分类号： H01L2100
CPC分类号： B81C1/00119 , B81B2201/0214 , B81B2201/058
摘要： The present invention is disclosed a microchannel array structure embedded in a silicon substrate and a fabrication method thereof. The microchannel array structure of the present invention is formed deep inside the substrate and has high-density microscopic micro-channels. Besides, going through surface micromachining, physical and chemical properties of the silicon substrate are hardly influenced by the fabrication procedures. With microchannels buried in the substrate, the top of a microchannel array structure becomes flat, minimizing the effect of step height. That way, additional devices such as passive components, micro sensors, micro actuators and electronic devices can be easily integrated onto the microchannel array structure. The microchannel array structure of the present invention can be employed as a basic fluidic platform for miniaturizing and improving perfomances of electronic device coolers as well as such fluidic micro-electro-mechanical system (MEMS) devices as biochips, microfluidic components and chemical analyzers, lab-on-a-chips, polymerase chain reaction (PCR) amplifiers, micro reactors and drug delivery systems.
摘要翻译：本发明公开了一种嵌入硅衬底的微通道阵列结构及其制造方法。本发明的微通道阵列结构形成在衬底的内部，并且具有高密度微观微通道。此外，通过表面微加工，硅衬底的物理和化学性质几乎不受制造程序的影响。由于微通道埋在基板中，微通道阵列结构的顶部变得平坦，从而最小化台阶高度的影响。这样，诸如无源组件，微传感器，微执行器和电子设备的附加设备可以容易地集成到微通道阵列结构上。本发明的微通道阵列结构可用作电子装置冷却器的微型化和改进的基本流体平台，以及诸如生物芯片，微流体组件和化学分析仪的实验室的这种流体微机电系统（MEMS）装置 - 聚合酶链反应（PCR）放大器，微反应器和药物递送系统。

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