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1. 发明申请

US20070265478A1 DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS AND PREPARATION METHOD THEREOF 有权
标题翻译：用于半导体工艺的干式气体及其制备方法
公开(公告)号：US20070265478A1
公开(公告)日：2007-11-15
申请号：US11535035
申请日：2006-09-25
申请人： Hae Seok JI , Ook Jae Cho , Jae Gug Ryu , Jong Yeol Yang , Young Hoon Ahn , Bong Suk Kim , Dong Hyun Kim
发明人： Hae Seok JI , Ook Jae Cho , Jae Gug Ryu , Jong Yeol Yang , Young Hoon Ahn , Bong Suk Kim , Dong Hyun Kim
IPC分类号： C07C17/20
CPC分类号： C07C17/208 , C07C17/38 , C07C17/383 , C07C23/08
摘要： The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.
摘要翻译：本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。该方法包括使八氯环戊烯与KF连续反应，并纯化粗八氟环戊烯。在反应步骤中，平行安装两个带有KF的过滤器，并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。在纯化步骤中，除去沸点低于八氟环戊烯的有机物，分离沸点高于八氟环戊烯的金属成分和有机物，以回收作为气体的八氟环戊烯。气态八氟环戊烯组合物含有99.995体积％以上的C 5 C 5 N 8 N 8，50体积ppm以下的氮，5重量％的氧体积ppm以下的水，5体积ppm以下的水，5重量ppm以下的金属成分。

2. 发明申请

US20080203353A1 DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS 审中-公开
标题翻译：用于半导体工艺的干蚀气体
公开(公告)号：US20080203353A1
公开(公告)日：2008-08-28
申请号：US12013975
申请日：2008-01-14
申请人： Hae Seok JI , Ook Jae Cho , Jae Gug Ryu , Jong Yeol Yang , Young Hoon Ahn , Bong Suk Kim , Dong Hyun Kim
发明人： Hae Seok JI , Ook Jae Cho , Jae Gug Ryu , Jong Yeol Yang , Young Hoon Ahn , Bong Suk Kim , Dong Hyun Kim
IPC分类号： C09K13/00
CPC分类号： C07C17/208 , C07C17/38 , C07C17/383 , C07C23/08
摘要： The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.
摘要翻译：本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。该方法包括使八氯环戊烯与KF连续反应，并纯化粗八氟环戊烯。在反应步骤中，平行安装两个带有KF的过滤器，并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。在纯化步骤中，除去沸点低于八氟环戊烯的有机物，分离沸点高于八氟环戊烯的金属成分和有机物，以回收作为气体的八氟环戊烯。气态八氟环戊烯组合物含有99.995体积％以上的C 5 C 5 N 8 N 8，50体积ppm以下的氮，5重量％的氧体积ppm以下的水，5体积ppm以下的水，5重量ppm以下的金属成分。

3. 发明授权

US07319174B2 Dry-etching gas for semiconductor process and preparation method thereof 有权
标题翻译：用于半导体工艺的干蚀刻气体及其制备方法
公开(公告)号：US07319174B2
公开(公告)日：2008-01-15
申请号：US11535035
申请日：2006-09-25
申请人： Hae Seok Ji , Ook Jae Cho , Jae Gug Ryu , Jong Yeol Yang , Young Hoon Ahn , Bong Suk Kim , Dong Hyun Kim
发明人： Hae Seok Ji , Ook Jae Cho , Jae Gug Ryu , Jong Yeol Yang , Young Hoon Ahn , Bong Suk Kim , Dong Hyun Kim
IPC分类号： C07C17/20 , C09K13/00
CPC分类号： C07C17/208 , C07C17/38 , C07C17/383 , C07C23/08
摘要： The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.
摘要翻译：本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。该方法包括使八氯环戊烯与KF连续反应，并纯化粗八氟环戊烯。在反应步骤中，平行安装两个带有KF的过滤器，并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。在纯化步骤中，除去沸点低于八氟环戊烯的有机物，分离沸点高于八氟环戊烯的金属成分和有机物，以回收作为气体的八氟环戊烯。气态八氟环戊烯组合物含有99.995体积％以上的C 5 C 5 N 8 N 8，50体积ppm以下的氮，5重量％的氧体积ppm以下的水，5体积ppm以下的水，5重量ppm以下的金属成分。

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