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    • 1. 发明申请
    • DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS
    • 用于半导体工艺的干蚀气体
    • US20080203353A1
    • 2008-08-28
    • US12013975
    • 2008-01-14
    • Hae Seok JIOok Jae ChoJae Gug RyuJong Yeol YangYoung Hoon AhnBong Suk KimDong Hyun Kim
    • Hae Seok JIOok Jae ChoJae Gug RyuJong Yeol YangYoung Hoon AhnBong Suk KimDong Hyun Kim
    • C09K13/00
    • C07C17/208C07C17/38C07C17/383C07C23/08
    • The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.
    • 本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。 该方法包括使八氯环戊烯与KF连续反应,并纯化粗八氟环戊烯。 在反应步骤中,平行安装两个带有KF的过滤器,并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。 在纯化步骤中,除去沸点低于八氟环戊烯的有机物,分离沸点高于八氟环戊烯的金属成分和有机物,以回收作为气体的八氟环戊烯。 气态八氟环戊烯组合物含有99.995体积%以上的C 5 C 5 N 8 N 8,50体积ppm以下的氮,5重量%的氧 体积ppm以下的水,5体积ppm以下的水,5重量ppm以下的金属成分。
    • 2. 发明授权
    • Dry-etching gas for semiconductor process and preparation method thereof
    • 用于半导体工艺的干蚀刻气体及其制备方法
    • US07319174B2
    • 2008-01-15
    • US11535035
    • 2006-09-25
    • Hae Seok JiOok Jae ChoJae Gug RyuJong Yeol YangYoung Hoon AhnBong Suk KimDong Hyun Kim
    • Hae Seok JiOok Jae ChoJae Gug RyuJong Yeol YangYoung Hoon AhnBong Suk KimDong Hyun Kim
    • C07C17/20C09K13/00
    • C07C17/208C07C17/38C07C17/383C07C23/08
    • The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.
    • 本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。 该方法包括使八氯环戊烯与KF连续反应,并纯化粗八氟环戊烯。 在反应步骤中,平行安装两个带有KF的过滤器,并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。 在纯化步骤中,除去沸点低于八氟环戊烯的有机物,分离沸点高于八氟环戊烯的金属成分和有机物,以回收作为气体的八氟环戊烯。 气态八氟环戊烯组合物含有99.995体积%以上的C 5 C 5 N 8 N 8,50体积ppm以下的氮,5重量%的氧 体积ppm以下的水,5体积ppm以下的水,5重量ppm以下的金属成分。
    • 4. 发明申请
    • DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS AND PREPARATION METHOD THEREOF
    • 用于半导体工艺的干式气体及其制备方法
    • US20070265478A1
    • 2007-11-15
    • US11535035
    • 2006-09-25
    • Hae Seok JIOok Jae ChoJae Gug RyuJong Yeol YangYoung Hoon AhnBong Suk KimDong Hyun Kim
    • Hae Seok JIOok Jae ChoJae Gug RyuJong Yeol YangYoung Hoon AhnBong Suk KimDong Hyun Kim
    • C07C17/20
    • C07C17/208C07C17/38C07C17/383C07C23/08
    • The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C5F8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.
    • 本发明是用于连续制备用于干蚀刻工艺的高纯度八氟环戊烯的方法。 该方法包括使八氯环戊烯与KF连续反应,并纯化粗八氟环戊烯。 在反应步骤中,平行安装两个带有KF的过滤器,并使其与含有八氯环戊烯的反应器以交替方式连通以产生粗制八氟环戊烯。 在纯化步骤中,除去沸点低于八氟环戊烯的有机物,分离沸点高于八氟环戊烯的金属成分和有机物,以回收作为气体的八氟环戊烯。 气态八氟环戊烯组合物含有99.995体积%以上的C 5 C 5 N 8 N 8,50体积ppm以下的氮,5重量%的氧 体积ppm以下的水,5体积ppm以下的水,5重量ppm以下的金属成分。
    • 6. 发明授权
    • Manufacturing method for perfluoroethane
    • 全氟乙烷的制造方法
    • US6162955A
    • 2000-12-19
    • US591852
    • 2000-06-12
    • Doo-Chan NaOok-Jae ChoJae-Gug Ryu
    • Doo-Chan NaOok-Jae ChoJae-Gug Ryu
    • B01J27/128C07B61/00C07C17/10C07C19/08
    • C07C17/10C07C19/08
    • A method for producing a high purity of perfluoroethane from hydrofluoroethane (C.sub.2 F.sub.x H.sub.y 1.ltoreq.x, 1.ltoreq.y.ltoreq.5, x+y=6). Cobalt difluoride (CoF.sub.2) as a catalyst is activated into cobalt trifluoride (CoF.sub.3) as a result of the contact reaction with fluorine gas in a reactor. The reactor is purged by removing the fluorine gas remaining in the reactor. The remaining gas is allowed to react with sulfur to give sulfur hexafluoride (SF.sub.6) which is then removed. The hydrofluoroethane is converted into perfluoroethane as a result of the catalyst of the activated cobalt trifluoride at 300-350.degree. C. The feedstock is safer and less corrosive than triple bond-containing compounds such as acetylene. In the method of the present invention, the formation of CF.sub.4 is extremely restrained and no inert gases are employed, so that a very high purity of C.sub.2 F.sub.6 can be obtained at a high conversion rate.
    • 一种从氢氟乙烷制备高纯度全氟乙烷的方法(C2FxHy1,x,1,y = 5,x + y = 6)。 作为催化剂的二氟化碳(CoF 2)由于与反应器中的氟气接触反应而被活化成三氟化钴(CoF 3)。 通过除去残留在反应器中的氟气来清除反应器。 剩余的气体与硫反应得到六氟化硫(SF6),然后将其除去。 由于活化的三氟化钴的催化剂在300-350℃,氢氟乙烷被转化为全氟乙烷。原料比三炔化合物如乙炔更安全,腐蚀性更差。 在本发明的方法中,CF4的形成被极度地抑制,并且不使用惰性气体,从而可以以高转化率获得非常高纯度的C2F6。