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1. 发明授权

US5139288A Coupling device for providing electrical and thermal insulation under high pressure, cryogenic conditions 失效
标题翻译：用于在高压，低温条件下提供电气和绝热的耦合装置
公开(公告)号：US5139288A
公开(公告)日：1992-08-18
申请号：US575459
申请日：1990-08-30
申请人： Habib Najm , Cecil J. Davis , Gregory E. Gardner
发明人： Habib Najm , Cecil J. Davis , Gregory E. Gardner
IPC分类号： F16L25/02 , F16L59/14 , F16L59/18 , F17C13/00
CPC分类号： F16L59/184 , F16L25/026 , F16L59/141 , F17C13/00 , Y10S285/911
摘要： A coupling device (10) provides sealing members (24), (26), preferably Indium wire O-rings (72), (74), suitable for sealing engagement with an insulating member (28) under cryogenic, high-pressure conditions. Coupling device (10) is designed to couple a first metal pipe attached to a first adapter (12), and a second metal pipe attached to a second adapter (14), so that fluid may be conveyed via bore (36), chamber (84), and bore (48) under such cryogenic high-pressure conditions. According to the invention, the coupling device (10) provides effective sealing under these extreme conditions while also providing thermal and electrical insulation due to the advantageous construction featuring insulating member (28), first collar member (20) and second collar member (22). Thus, two metal pipes may be joined together, one in a high-voltage, low temperature state, the other in an electrically grounded condition, each pipe being maintained substantially in its respective condition by virtue of the insulating properties of coupling device (10).
摘要翻译：耦合装置（10）提供适于在低温，高压条件下与绝缘构件（28）密封接合的密封构件（24），（26），优选铟线O形环（72），（74）。耦合装置（10）被设计成将附接到第一适配器（12）的第一金属管和附接到第二适配器（14）的第二金属管耦合，使得流体可以经由孔（36），室（ 84）和孔（48）在这样的低温高压条件下。根据本发明，耦合装置（10）在这些极端条件下提供有效的密封，同时由于具有绝缘构件（28），第一环构件（20）和第二环构件（22）的有利结构，还提供热和电绝缘，。因此，两个金属管可以连接在一起，一个处于高电压，低温状态，另一个处于电接地状态，由于耦合装置（10）的绝缘性能，每个管基本维持在其各自的状态，。

2. 发明授权

US06705394B1 Rapid cycle chuck for low-pressure processing 失效
标题翻译：快速循环卡盘用于低压处理
公开(公告)号：US06705394B1
公开(公告)日：2004-03-16
申请号：US09664011
申请日：2000-09-19
申请人： Mehrdad M. Moslehi , Xiangqun Chen , Shiyuan Cheng , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Xiangqun Chen , Shiyuan Cheng , Cecil J. Davis
IPC分类号： C23C1602
CPC分类号： H01L21/67248 , C23C16/4586 , C23C16/46 , C23C16/463 , H01L21/67109
摘要： Rapid thermal cycling of substrates in low-pressure processing environments is achieved by movable temperature conditioners located outside the processing environments. The substrates are mounted on thermally conductive pedestals for processing in the low-pressure environment. The temperature conditioners are movable both into and out of thermal contact with the pedestals outside the low-pressure environment to regulate transfers of heat through the pedestals between the substrates and the temperature conditioners. A translatable cooler block with a high thermal mass and a large interface area with the pedestal can be used as a temperature conditioner for more rapidly withdrawing heat from the substrate.
摘要翻译：在低压处理环境中，基板的快速热循环是通过位于加工环境之外的可移动温度调节器实现的。基板安装在导热底座上，用于在低压环境中进行加工。温度调节器可以与低压环境之外的基座进行热接触，以便调节通过基板和温度调节器之间的基座的热传递。可以使用具有高热质量和与基座的大的接口面积的可翻转的冷却器块作为用于更快速地从基板排出热量的温度调节器。

3. 发明授权

US5653838A Glass heating and sealing system 失效
标题翻译：玻璃加热密封系统
公开(公告)号：US5653838A
公开(公告)日：1997-08-05
申请号：US535423
申请日：1995-09-28
申请人： Ming-Jang Hwang , Chi-Cheong Shen , Cecil J. Davis , Robert T. Matthews , Phillip Chapados, Jr.
发明人： Ming-Jang Hwang , Chi-Cheong Shen , Cecil J. Davis , Robert T. Matthews , Phillip Chapados, Jr.
IPC分类号： C03B23/24 , C03B29/02 , H01J9/26 , B32B31/24
CPC分类号： C03B23/245 , C03B29/02 , H01J9/261 , Y02P40/57
摘要： A glass heating and sealing system (10, 30, 60) and method for manufacturing a flat panel display including anode and cathode glass panels with a vacuum compartment between them includes a plurality of vacuum chambers (12, 14, 16, 18, 20, 32, 34, 36, 38, 61, 76) for processing glass panels (39, 63, 74). Transfer of glass panels (39, 63, 74) between chambers (12, 14, 16, 18, 20, 32, 34, 36, 38, 61, 76) is accomplished by a transfer mechanism (24, 42, 68, 72) located within a central vacuum chamber (22, 40, 70) commonly connected to the other chambers. System (10, 30, 60) may include a rapid thermal processing (RTP) chamber (14, 34, 38, 76) for quick and even heating of the panels (39, 63, 74). System (10) includes an e-beam bombardment chamber (16) for preconditioning the anode glass panels, and a heating chamber (18) for fusing anode glass panels to cathode glass panels. Different levels of vacuum may be established in different chambers.
摘要翻译：一种玻璃加热和密封系统（10,30,60）以及用于制造平板显示器的方法，包括在它们之间具有真空室的阳极和阴极玻璃面板包括多个真空室（12,14,16,18,20， 32,34,36,38,61,76），用于加工玻璃面板（39,63,74）。在室（12,14,16,18,20,32,34,36,38,61,76）之间转移玻璃面板（39,63,74）由转印机构（24,42,68,72 ）位于通常连接到其它室的中央真空室（22,40,70）内。系统（10,30,60）可以包括用于快速并均匀加热面板（39,63,74）的快速热处理（RTP）室（14,34,38,76）。系统（10）包括用于预处理阳极玻璃面板的电子束轰击室（16）和用于将阳极玻璃面板熔合到阴极玻璃面板的加热室（18）。可以在不同的室中建立不同程度的真空。

4. 发明授权

US5262610A Low particulate reliability enhanced remote microwave plasma discharge device 失效
标题翻译：低微粒可靠性增强了远程微波等离子体放电装置
公开(公告)号：US5262610A
公开(公告)日：1993-11-16
申请号：US677048
申请日：1991-03-29
申请人： Steve S. Huang , Cecil J. Davis , Rhett B. Jucha , Lee M. Loewenstein
发明人： Steve S. Huang , Cecil J. Davis , Rhett B. Jucha , Lee M. Loewenstein
IPC分类号： H01J37/32 , B23K9/00
CPC分类号： H01J37/32256 , H01J37/32357
摘要： A remote microwave plasma generator comprises the combination of two parts, a tunable microwave applicator, and a double wall, water cooled quartz/sapphire tube. The tunable waveguide applicator is a nonconducting adjustable waveguide short with a quartz/sapphire tube inserted through it. The adjustable end is one quarter of a guide wavelength from the center line of the tube, and the other side is 0.1 inches less in distance, thus permitting the applicator to be used with a triple stub tuner for optimum coupling.
摘要翻译：远程微波等离子体发生器包括两部分的组合，可调谐微波施加器和双壁水冷石英/蓝宝石管。可调谐波导管施加器是一个不导电的可调节波导管，其中插入有石英/蓝宝石管。可调节端距离管的中心线的四分之一的引导波长，另一侧距离较小0.1英寸，因此允许施加器与三根短线调谐器一起使用以实现最佳耦合。

5. 发明授权

US5217559A Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing 失效
标题翻译：用于原位深紫外光子辅助半导体晶片加工的装置和方法
公开(公告)号：US5217559A
公开(公告)日：1993-06-08
申请号：US625186
申请日：1990-12-10
申请人： Mehrdad M. Moslehi , Ajit P. Paranjpe , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Ajit P. Paranjpe , Cecil J. Davis
IPC分类号： H01L21/302 , H01L21/00 , H01L21/205 , H01L21/268 , H01L21/3065
CPC分类号： H01L21/67115 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/2686
摘要： An in-situ deep-ultraviolet light generation module (126) for photon-assisted processing of semiconductor wafers (44) comprises a process environment space (152) for photochemical processing applications. Process gas injection space (182) receives reactive process gases and injects them into process environment space (152). Plasma fill space (124) receives a plasma (120) and may direct plasma (120) away from or into the process environment space (152) according to the presence or absence of control gas (160) flow. Control gas space (174) and flow/pressure switch space (154) receive control gas (160) to selectively permit deep-ultraviolet photons or plasma to reach process environment space (152) and interact with wafer (44) for photo-enhanced or plasma-enhanced wafer processing.
摘要翻译：用于半导体晶片（44）的光子辅助处理的原位深紫外光发生模块（126）包括用于光化学处理应用的工艺环境空间（152）。工艺气体注入空间（182）接收反应性工艺气体并将其注入工艺环境空间（152）。等离子体填充空间（124）接收等离子体（120）并且可以根据是否存在控制气体（160）流将等离子体（120）引导到过程环境空间（152）或进入过程环境空间（152）。控制气体空间（174）和流量/压力开关空间（154）接收控制气体（160）以选择性地允许深紫外光子或等离子体到达处理环境空间（152）并与晶片（44）相互作用以进行光增强或等离子体增强晶片处理。

6. 发明授权

US5082542A Distributed-array magnetron-plasma processing module and method 失效
标题翻译：分布式阵列磁控管等离子体处理模块及方法
公开(公告)号：US5082542A
公开(公告)日：1992-01-21
申请号：US561851
申请日：1990-08-02
申请人： Mehrdad M. Moslehi , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A semiconductor wafer plasma processing magnetron module (12) for magnetron-plasma-enhanced processing of semiconductor wafers comprises a base (50) and distributed magnet array (52). The magnet array (52) comprises a plurality of associated magnet unit cells (54). Unit cells (54) associated for producing a periodic magnetic field at the semiconductor wafer (22). The magnetron (12), including the magnetic array (52), mounts to base (50). Unit cells (54) form a repetitive pattern across the surface of magnet array (52). Magnetron module (12) produces a magnetic field possessing periodic uniformity. Unit cells (54) associate to permit expansion of magnet array (52) for any wafer size. A preferred embodiment of the invention includes a hexagonal configuration of magnets (56) and (58) that form unit cells (54).
摘要翻译：用于半导体晶片的磁控管等离子体增强处理的半导体晶片等离子体处理磁控管模块（12）包括基座（50）和分布磁体阵列（52）。磁体阵列（52）包括多个相关联的磁体单元电池（54）。用于在半导体晶片（22）处产生周期性磁场的单元电池（54）。包括磁性阵列（52）的磁控管（12）安装到基座（50）上。单元电池（54）在磁体阵列（52）的表面上形成重复的图案。磁控管模块（12）产生具有周期性均匀性的磁场。单元电池（54）关联以允许用于任何晶片尺寸的磁体阵列（52）的扩展。本发明的优选实施例包括形成单位电池（54）的磁体（56）和（58）的六边形构造。

7. 发明授权

US4997520A Method for etching tungsten 失效
标题翻译：蚀刻钨的方法
公开(公告)号：US4997520A
公开(公告)日：1991-03-05
申请号：US204821
申请日：1988-06-10
申请人： Rhett B. Jucha , Cecil J. Davis , Duane Carter , Jeff D. Achenbach
发明人： Rhett B. Jucha , Cecil J. Davis , Duane Carter , Jeff D. Achenbach
IPC分类号： C23F4/00 , H01L21/3213
CPC分类号： H01L21/32135 , C23F4/00
摘要： A method for etching a tungsten film which includes introducing activated species of a halogenated hydrocarbon to the tungsten film.
摘要翻译：一种用于蚀刻钨膜的方法，其包括将活化的卤代烃类引入到钨膜中。

8. 发明授权

US4867841A Method for etch of polysilicon film 失效
标题翻译：多晶硅膜蚀刻方法
公开(公告)号：US4867841A
公开(公告)日：1989-09-19
申请号：US203585
申请日：1988-05-27
申请人： Lee M. Loewenstein , Cecil J. Davis , Rhett B. Jucha
发明人： Lee M. Loewenstein , Cecil J. Davis , Rhett B. Jucha
IPC分类号： H01L21/3213
CPC分类号： H01L21/32137
摘要： A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium and a source of Fluorine with the process chamber within the process module being generally at ambient temperatures.
摘要翻译：用于蚀刻多晶硅膜的方法，其利用低压工艺模块中的远程和原位等离子体的组合以及来自氦和氟源的混合物的等离子体，处理模块内的处理室通常为环境温度温度。

9. 发明授权

US4842680A Advanced vacuum processor 失效
标题翻译：先进的真空处理器
公开(公告)号：US4842680A
公开(公告)日：1989-06-27
申请号：US188633
申请日：1988-05-02
申请人： Cecil J. Davis , Timothy J. Wooldridge , Duane E. Carter
发明人： Cecil J. Davis , Timothy J. Wooldridge , Duane E. Carter
IPC分类号： H01L21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/67201 , H01L21/6719 , H01L21/67772 , H01L21/68785
摘要： A complete integrated circuit processing module, wherein multiple processing stations, each with its own vacuum isolation, are located inside a single module which is held at hard vacuum. A wafer transport arm mechanism permits interchange of wafers among the processing stations and a load lock. The load lock is equipped to remove and replace wafers from a vacuum-sealed wafer carrier. The wafers remain face-down and under hard vacuum during all the wafer handling steps.
摘要翻译：一个完整的集成电路处理模块，其中具有其自身真空隔离的多个处理站位于保持在硬真空下的单个模块内部。晶片传送臂机构允许在处理站之间交换晶片和加载锁定。负载锁被设置为从真空密封的晶片载体中移除和替换晶片。在所有晶片处理步骤期间，晶片保持面朝下且在硬真空下。

10. 发明授权

US4842676A Process for etch of tungsten 失效
标题翻译：钨蚀刻工艺
公开(公告)号：US4842676A
公开(公告)日：1989-06-27
申请号：US122605
申请日：1987-11-17
申请人： Rhett B. Jucha , Cecil J. Davis , Lee M. Loewenstein
发明人： Rhett B. Jucha , Cecil J. Davis , Lee M. Loewenstein
IPC分类号： C23F4/00 , H01L21/3213
CPC分类号： H01L21/32136 , C23F4/00
摘要： A process for etch of tungsten which utilizes both in situ and remote plasmas, and a gas mixture for the plasma which comprises SF.sub.6, HBr, and a source of hydrocarbons at low pressure and ambient temperature to product an etch which is both selective to silicon dioxide and photoresist and anisotropic.
摘要翻译：用于蚀刻钨的方法，其利用原位和远程等离子体，以及用于等离子体的气体混合物，其包含SF 6，HBr和在低压和环境温度下的烃源，以产生对二氧化硅有选择性的蚀刻和光致抗蚀剂和各向异性。

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