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1. 发明授权

US5496762A Highly resistive structures for integrated circuits and method of manufacturing the same 失效
标题翻译：用于集成电路的高电阻结构及其制造方法
公开(公告)号：US5496762A
公开(公告)日：1996-03-05
申请号：US253049
申请日：1994-06-02
申请人： Gurtej S. Sandhu , Trung T. Doan , David A. Cathey
发明人： Gurtej S. Sandhu , Trung T. Doan , David A. Cathey
IPC分类号： H01L21/02 , H01L21/8244 , H01L27/11 , H01L21/70
CPC分类号： H01L28/24 , H01L27/11 , H01L27/1112 , Y10S148/117 , Y10S148/136
摘要： This invention is a process for making resistor structures having high stability and reliability characteristics. Process parameters are easily modifiable to adjust the resistivity of the structures. A layer of titanium nitride, which may contain certain impurities such as carbon, is deposited via chemical vapor deposition by pyrolization of an organometallic precursor compound of the formula Ti(NR.sub.2).sub.4 either alone or in the presence of either a nitrogen source (e.g. ammonia or nitrogen gas) or an activated species (which may include a halogen, NH.sub.3, or hydrogen radicals, or combinations thereof). The TiN film is then oxidized to create a structure that demonstrates highly stable, highly reliable resistive characteristics, with bulk resistivity values in giga ohm range. In a preferred embodiment of the invention, a predominantly amorphous titanium carbonitride film is deposited on an insulative substrate in a chemical vapor deposition chamber. A layer of titanium is then deposited on top of the titanium carbonitride film. The titanium layer is then patterned with photoresist. The exposed titanium is then etched with a reagent that is selective for titanium over titanium carbonitride (HF, for example, has better than 10:1 selectivity) so that the etch essentially stops when the titanium carbonitride film is exposed. The exposed titanium carbonitride film is then oxidized to achieve the desired resistivity.
摘要翻译：本发明是制造具有高稳定性和可靠性特性的电阻器结构的方法。工艺参数易于修改以调整结构的电阻率。可以通过化学气相沉积通过单独或在氮源（例如氨）的存在下热分解式Ti（NR 2）4的有机金属前体化合物来沉积可能含有某些杂质如碳的氮化钛层或氮气）或活化物质（其可以包括卤素，NH 3或氢基团，或其组合）。然后将TiN膜氧化，形成表现出高度稳定，高度可靠的电阻特性的结构，体电阻率为千兆欧姆范围。在本发明的优选实施方案中，主要是无定形的碳氮化钛膜沉积在化学气相沉积室中的绝缘衬底上。然后将钛层沉积在碳氮化钛膜的顶部。然后用光致抗蚀剂对钛层进行图案化。然后用暴露的钛蚀刻钛对碳氮化钛（HF，例如优于10：1选择性）选择性的试剂，使得当碳氮化钛膜暴露时，蚀刻基本上停止。然后将暴露的碳氮化钛膜氧化以获得所需的电阻率。

2. 发明授权

US07009298B2 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer 失效
标题翻译：具有硅化钛界面的硅的低电阻接触和无定形氮化钛氮化硼阻挡层
公开(公告)号：US07009298B2
公开(公告)日：2006-03-07
申请号：US10639120
申请日：2003-08-11
申请人： Gurtej S. Sandhu , Trung T. Doan , Tyler A. Lowrey
发明人： Gurtej S. Sandhu , Trung T. Doan , Tyler A. Lowrey
IPC分类号： H01L21/302
CPC分类号： H01L21/76855 , C23C16/34 , H01L21/28518 , H01L21/28556 , H01L21/28568 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76862
摘要： A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor.
摘要翻译：提供了一种接触结构，其结合使用四 - 二烷基酰氨基 - 钛，Ti（NMe 2 O 3）4 Si 3 O 4的低压化学气相沉积（LPCVD）形成的无定形氮化钛阻挡层。，作为前体。

3. 发明授权

US06793736B2 Method of providing high flux of point of use activated reactive species for semiconductor processing 失效
标题翻译：提供高通量使用激活活性物质进行半导体加工的方法
公开(公告)号：US06793736B2
公开(公告)日：2004-09-21
申请号：US10392940
申请日：2003-03-20
申请人： Gurtej S. Sandhu , Trung T. Doan
发明人： Gurtej S. Sandhu , Trung T. Doan
IPC分类号： B08B702
CPC分类号： H01L21/67069
摘要： A method for providing a high flux of point of use activated reactive species for semiconductor processing wherein a workpiece is exposed to a gaseous atmosphere containing a transmission gas that is substantially nonattenuating to preselected wavelengths of electromagnetic radiation. A laminar flow of a gaseous constituent is also provided over a substantially planar surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the gaseous atmosphere such that it converges in the laminar flow to provide maximum beam energy in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The gaseous constituent is dissociated by the beam producing an activated reactive species that reacts with the surface of the workpiece.
摘要翻译：一种用于提供用于半导体加工的高通量使用激活活性物质的方法，其中工件暴露于含有基本上不衰减到预选的电磁辐射波长的透射气体的气体气氛中。气体成分的层流还设置在工件的基本上平坦的表面上，其中电磁辐射的束被引导到气态气氛中，使得其在层流中会聚以提供最接近表面的最大束能的距离。气体组分由光束解离，产生与工件表面反应的活化反应物质。

4. 发明授权

US5320880A Method of providing a silicon film having a roughened outer surface 失效
标题翻译：提供具有粗糙化外表面的硅膜的方法
公开(公告)号：US5320880A
公开(公告)日：1994-06-14
申请号：US155585
申请日：1993-11-18
申请人： Gurtej S. Sandhu , Trung T. Doan
发明人： Gurtej S. Sandhu , Trung T. Doan
IPC分类号： C23C16/24 , C23C16/505 , H01L21/02 , H01L21/205 , B05D3/06 , B05D3/02 , C23C16/00
CPC分类号： H01L28/84 , C23C16/24 , C23C16/505 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： A method of providing a silicon film having a roughened outer surface atop a semiconductor wafer comprises: a) placing a semiconductor wafer into a plasma enhanced RF powered chemical vapor deposition reactor; and b) plasma enhanced chemical vapor depositing a layer of silicon over the wafer surface by providing quantities of a silicon source gas, a carrier gas, and TiCl.sub.4 to the reactor, the atomic ratio of the quantities of silicon source gas and TiCl.sub.4 being greater than or equal to 4 at the wafer surface; and by maintaining the reactor at a selected RF power, pressure and temperature; the RF power being supplied at a frequency of at least 5 MHz and preferably at least 10 MHz, the quantities of silicon source gas, RF power, temperature and pressure being effective to produce a predominately silicon film having an outer surface, the quantity of TiCl.sub.4 being effective to induce roughness into the outer silicon surface as compared to an outer silicon surface prepared under identical conditions but for introduction of TiCl.sub.4 but ineffective to produce a predominately titanium silicide film.
摘要翻译：提供在半导体晶片顶部具有粗糙化的外表面的硅膜的方法包括：a）将半导体晶片放置在等离子体增强的RF功率化学气相沉积反应器中; 和b）通过向反应器提供大量的硅源气体，载气和TiCl 4，等离子体增强化学气相沉积在晶片表面上的硅层，硅源气体和TiCl 4的量的原子比大于或在晶片表面等于4; 并通过将反应器维持在选定的RF功率，压力和温度; RF功率以至少5MHz，优选至少10MHz的频率提供，硅源气体的量，RF功率，温度和压力有效地产生主要具有外表面的硅膜，TiCl 4的量与在相同条件下制备的但用于引入TiCl 4但不能产生主要的硅化钛膜的外硅表面相比，有效地将粗糙度引入外硅表面。

5. 发明授权

US5278100A Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers 失效
标题翻译：用于在半导体晶片上沉积硅化钛的化学气相沉积技术
公开(公告)号：US5278100A
公开(公告)日：1994-01-11
申请号：US789585
申请日：1991-11-08
申请人： Trung T. Doan , Gurtej S. Sandhu
发明人： Trung T. Doan , Gurtej S. Sandhu
IPC分类号： H01L21/205 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/441
CPC分类号： H01L21/76855 , H01L21/285 , H01L21/28518 , H01L21/76843 , H01L21/76877 , Y10S148/147
摘要： A method of providing a conformal layer of TiSi.sub.x atop a semiconductor wafer within a chemical vapor deposition reactor includes the following steps: a) positioning a wafer within the reactor; b) injecting selected quantities of gaseous Ti(NR.sub.2).sub.4 precursor, gaseous silane and a carrier gas to within the reactor, where R is selected from the group consisting of H and a carbon containing radical, the quantities of Ti(NR.sub.2).sub.4 precursor and silane being provided in a volumetric ratio of Ti(NR.sub.2).sub.4 to silane of from 1:300 to 1:10, the quantity of carrier gas being from about 50 sccm to about 2000 sccm and comprising at least one noble gas; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the precursor and silane to deposit a film on the wafer, the film comprising a mixture of TiSi.sub.x and TiN, the selected temperature being from about 100.degree. C. to about 500.degree. C., and the selected pressure being from about 150 mTorr to about 100 Torr.
摘要翻译：在化学气相沉积反应器内提供半导体晶片顶部的TiSix共形层的方法包括以下步骤：a）将晶片定位在反应器内; b）将选定量的气态Ti（NR 2）4前体，气态硅烷和载气注入反应器内，其中R选自H和含碳基团，Ti（NR 2）4前体的量硅烷以Ti（NR 2）4与硅烷的体积比为1:300至1:10，载气量为约50sccm至约2000sccm并包含至少一种惰性气体; 以及c）将所述反应器保持在选择的压力和所选择的温度下，所述选择的温度对于使所述前体和硅烷反应以在所述晶片上沉积膜是有效的，所述膜包含TiSix和TiN的混合物，所述选定温度为约100℃ 至约500℃，并且所选择的压力为约150mTorr至约100Torr。

6. 发明授权

US5252518A Method for forming a mixed phase TiN/TiSi film for semiconductor manufacture using metal organometallic precursors and organic silane 失效
标题翻译：使用金属有机金属前体和有机硅烷形成用于半导体制造的混合TiN / TiSi膜的方法
公开(公告)号：US5252518A
公开(公告)日：1993-10-12
申请号：US845215
申请日：1992-03-03
申请人： Gurtej S. Sandhu , Trung T. Doan
发明人： Gurtej S. Sandhu , Trung T. Doan
IPC分类号： H01L21/285 , H01L21/768 , H01L23/532 , H01L21/441
CPC分类号： H01L23/53257 , H01L21/28518 , H01L21/76889 , H01L2924/0002 , Y10S148/147 , Y10S438/935
摘要： A LPCVD method for depositing a film of TiN on a semiconductor structure includes reacting an organometallic titanium source gas such as TMAT and organic silane as a reactive gas. The deposited film is a mixed phase of TiN and TiSi.sub.2 and is characterized by a low contact resistance, good step coverage and good barrier properties. The reaction is preferably carried out in a cold wall CVD reactor at relatively low temperatures (i.e. 200.degree. C.) and at pressures of from about 0.05 to 30 Torr.
摘要翻译：用于在半导体结构上沉积TiN膜的LPCVD方法包括使诸如TMAT的有机金属钛源气体和有机硅烷作为反应气体反应。沉积膜是TiN和TiSi2的混合相，其特征在于接触电阻低，阶梯覆盖率好，阻隔性好。该反应优选在相对低的温度（即200℃）和约0.05至30托的压力下在冷壁CVD反应器中进行。

7. 发明授权

US5232875A Method and apparatus for improving planarity of chemical-mechanical planarization operations 失效
标题翻译：改善化学机械平面化操作平面性的方法和装置
公开(公告)号：US5232875A
公开(公告)日：1993-08-03
申请号：US961565
申请日：1992-10-15
申请人： Mark E. Tuttle , Trung T. Doan , Angus C. Fox , Gurtej S. Sandhu , Hugh E. Stroupe
发明人： Mark E. Tuttle , Trung T. Doan , Angus C. Fox , Gurtej S. Sandhu , Hugh E. Stroupe
IPC分类号： B24B1/00 , B24B37/10 , H01L21/00 , H01L21/304
CPC分类号： B24B37/102 , H01L21/67023 , Y10S438/959
摘要： A method and apparatus for improving planarity of chemical mechanical planarization of semiconductor wafers. The wafer is affixed to the planar surface of a wafer carrier. A planar platen, on which is mounted a polishing pad, is moved about in a plane parallel to the pad surface with either an orbital, fixed-direction vibratory, or random-direction vibratory motion. In one embodiment of the invention, pressure between the surface of the wafer to be polished and the moving polishing pad is generated by the force of gravity acting on at least the wafer and the carrier; in another it is provided by a mechanical force applied normal to the wafer surface. The polishing pad is wetted with a slurry having abrasive particles suspended in a liquid which may be chemically reactive with respect to at least one material on the wafer.
摘要翻译：一种用于改善半导体晶片的化学机械平面化的平面性的方法和装置。晶片固定在晶片载体的平面上。安装有抛光垫的平面压板在与轨道，固定方向振动或随机振动运动平行的平面中移动。在本发明的一个实施例中，待抛光的晶片的表面与移动的抛光垫之间的压力通过作用于至少晶片和载体的重力产生; 在另一个中，它由通常施加于晶片表面的机械力提供。抛光垫用具有悬浮在液体中的研磨颗粒的浆液润湿，该液体可以相对于晶片上的至少一种材料具有化学反应性。

8. 发明授权

US07220670B2 Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same 失效
标题翻译：通过使用脉冲等离子体化学气相沉积法生产粗多晶硅的方法及其制备的产品
公开(公告)号：US07220670B2
公开(公告)日：2007-05-22
申请号：US10930443
申请日：2004-08-31
申请人： Gurtej S. Sandhu , Trung T. Doan
发明人： Gurtej S. Sandhu , Trung T. Doan
IPC分类号： H01L21/44
CPC分类号： H01L28/82 , C23C16/24 , C23C16/515 , H01L21/28525 , Y10S438/964
摘要： A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.
摘要翻译：公开了一种在基板上沉积粗多晶硅膜的方法。该方法包括将反应气体氩和硅烷引入沉积室，并且在沉积过程中在不同时间启用和禁用等离子体。

9. 发明授权

US07001481B2 Method and system providing high flux of point of use activated reactive species for semiconductor processing 失效
公开(公告)号：US07001481B2
公开(公告)日：2006-02-21
申请号：US09998073
申请日：2001-11-30
申请人： Gurtej S. Sandhu , Trung T. Doan
发明人： Gurtej S. Sandhu , Trung T. Doan
IPC分类号： C23F1/00
CPC分类号： H01L21/67069
摘要： A method and system providing a high flux of point of use activated reactive species for semiconductor processing wherein a workpiece is exposed to a gaseous atmosphere containing a transmission gas that is substantially nonattenuating to preselected wavelengths of electromagnetic radiation. A laminar flow of a gaseous constituent is also provided over a substantially planar surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the gaseous atmosphere such that it converges in the laminar flow to provide maximum beam energy in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The gaseous constituent is dissociated by the beam producing an activated reactive species that reacts with the surface of the workpiece.

10. 发明授权

US06953743B2 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer 失效
公开(公告)号：US06953743B2
公开(公告)日：2005-10-11
申请号：US10637108
申请日：2003-08-08
申请人： Gurtej S. Sandhu , Trung T. Doan , Tyler A. Lowrey
发明人： Gurtej S. Sandhu , Trung T. Doan , Tyler A. Lowrey
IPC分类号： C23C16/34 , H01L21/285 , H01L21/768 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/76855 , C23C16/34 , H01L21/28518 , H01L21/28556 , H01L21/28568 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76862
摘要： A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

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