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1. 发明申请

US20100154872A1 SOLAR CELL AND METHOD OF FABRICATING THE SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100154872A1
公开(公告)日：2010-06-24
申请号：US12635660
申请日：2009-12-10
申请人： Gug-Il JUN , Woo-Su Lee , Dong-Seop Kim , Jin-Seock Kim , Byoung-Dong Kim , Kang-Hee Lee , Dong-Gi Ahn , Byung-Joo Lee , Hyoung-Jin Park , In-Ki Kim
发明人： Gug-Il JUN , Woo-Su Lee , Dong-Seop Kim , Jin-Seock Kim , Byoung-Dong Kim , Kang-Hee Lee , Dong-Gi Ahn , Byung-Joo Lee , Hyoung-Jin Park , In-Ki Kim
IPC分类号： H01L31/0296 , H01L31/18 , H01L21/06
CPC分类号： C23C14/14 , C23C14/5866 , H01L31/0322 , H01L31/03923 , H01L31/065 , Y02E10/52 , Y02E10/541 , Y02E10/544
摘要： A solar cell and a method of fabricating the same are provided according to one or more embodiments. According to an embodiment, the solar cell includes a substrate, a back electrode layer formed on the substrate, a light absorbing layer formed on the back electrode layer, and a transparent electrode layer formed on the light absorbing layer, wherein the light absorbing layer is comprised of copper (Cu), gallium (Ga), indium (In), sulfur (S), and selenium (Se) and includes a first concentration region in which concentrations of sulfur (S) gradually decrease in the light absorbing layer going in a first direction from the back electrode layer to the transparent electrode layer.
摘要翻译：根据一个或多个实施例提供太阳能电池及其制造方法。根据一个实施例，太阳能电池包括基板，形成在基板上的背面电极层，形成在背面电极层上的光吸收层和形成在光吸收层上的透明电极层，其中光吸收层是包括铜（Cu），镓（Ga），铟（In），硫（S）和硒（Se）组成的第一浓度区域，其中吸光层中硫（S）的浓度逐渐降低从背电极层到透明电极层的第一方向。

2. 发明授权

US08916767B2 Solar cell and method of fabricating the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08916767B2
公开(公告)日：2014-12-23
申请号：US12635660
申请日：2009-12-10
申请人： Gug-Il Jun , Woo-Su Lee , Dong-Seop Kim , Jin-Seock Kim , Byoung-Dong Kim , Kang-Hee Lee , Dong-Gi Ahn , Byung-Joo Lee , Hyoung-Jin Park , In-Ki Kim
发明人： Gug-Il Jun , Woo-Su Lee , Dong-Seop Kim , Jin-Seock Kim , Byoung-Dong Kim , Kang-Hee Lee , Dong-Gi Ahn , Byung-Joo Lee , Hyoung-Jin Park , In-Ki Kim
IPC分类号： H01L31/00 , H01L21/00 , H01L31/0392 , C23C14/58 , H01L31/065 , C23C14/14 , H01L31/032
CPC分类号： C23C14/14 , C23C14/5866 , H01L31/0322 , H01L31/03923 , H01L31/065 , Y02E10/52 , Y02E10/541 , Y02E10/544
摘要： A solar cell and a method of fabricating the same are provided according to one or more embodiments. According to an embodiment, the solar cell includes a substrate, a back electrode layer formed on the substrate, a light absorbing layer formed on the back electrode layer, and a transparent electrode layer formed on the light absorbing layer, wherein the light absorbing layer is comprised of copper (Cu), gallium (Ga), indium (In), sulfur (S), and selenium (Se) and includes a first concentration region in which concentrations of sulfur (S) gradually decrease in the light absorbing layer going in a first direction from the back electrode layer to the transparent electrode layer.
摘要翻译：根据一个或多个实施例提供太阳能电池及其制造方法。根据一个实施例，太阳能电池包括基板，形成在基板上的背面电极层，形成在背面电极层上的光吸收层和形成在光吸收层上的透明电极层，其中光吸收层是包括铜（Cu），镓（Ga），铟（In），硫（S）和硒（Se）组成的第一浓度区域，其中吸光层中硫（S）的浓度逐渐降低从背电极层到透明电极层的第一方向。

3. 发明授权

US09412895B2 Method of manufacturing photoelectric device 有权
标题翻译：制造光电器件的方法
公开(公告)号：US09412895B2
公开(公告)日：2016-08-09
申请号：US13612687
申请日：2012-09-12
申请人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
发明人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
摘要翻译：一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

4. 发明申请

US20130267059A1 METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE 有权
标题翻译：制造光电器件的方法
公开(公告)号：US20130267059A1
公开(公告)日：2013-10-10
申请号：US13612687
申请日：2012-09-12
申请人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
发明人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
摘要翻译：一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

5. 发明授权

US06524880B2 Solar cell and method for fabricating the same 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US06524880B2
公开(公告)日：2003-02-25
申请号：US09912061
申请日：2001-07-25
申请人： In-Sik Moon , Dong-Seop Kim , Soo-Hong Lee
发明人： In-Sik Moon , Dong-Seop Kim , Soo-Hong Lee
IPC分类号： H01L3104
CPC分类号： H01L31/022425 , H01L31/18 , Y02E10/50
摘要： A technique for fabricating a solar cell includes an n+ emitter region first being formed on a front surface of the cell, and then front and rear insulating layers being formed on both sides of the cell. P (Phosphorus)-source and B (Boron)-source are printed on the front and rear insulating layers, respectively, and then both dopants are diffused into the cell at high temperature. Therefore, n++ region in the front side of the cell and BSF (back surface field) region in the rear side of the cell is formed. Front and rear contact patterns are formed on the front and rear insulating layers, respectively. The n++ region and BSF region are exposed after front and rear contacts are formed on the front and rear insulating layers, respectively. The front and rear contacts contact the n++ region and BSF region, respectively.
摘要翻译：制造太阳能电池的技术包括首先形成在电池的前表面上的n +发射极区，然后在电池的两侧形成前后绝缘层。 P（磷）源和B（硼）源分别印刷在前后绝缘层上，然后两种掺杂剂在高温下扩散到电池中。因此，形成电池前侧的n ++区域和电池背面的BSF（背面场）区域。前后接触图案分别形成在前后绝缘层上。在分别在前后绝缘层上形成前后接触后，露出n ++区域和BSF区域。前后触点分别接触n ++区域和BSF区域。

6. 发明申请

US20130095597A1 METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE 有权
标题翻译：制造光电器件的方法
公开(公告)号：US20130095597A1
公开(公告)日：2013-04-18
申请号：US13568462
申请日：2012-08-07
申请人： Sang-Jin Park , Min-Chul Song , Sung-Chan Park , Dong-Seop Kim , Won-Gyun Kim , Sang-Won Seo
发明人： Sang-Jin Park , Min-Chul Song , Sung-Chan Park , Dong-Seop Kim , Won-Gyun Kim , Sang-Won Seo
IPC分类号： H01L31/0232 , H01L31/0248
CPC分类号： H01L31/1804 , H01L21/223 , H01L21/2255 , H01L21/2256 , H01L21/268 , H01L31/02363 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.
摘要翻译：一种制造太阳能电池的方法，包括提供具有第一导电类型的半导体衬底; 执行包括形成具有不同于第一导电类型的第二导电类型的第一掺杂材料层的第一沉积工艺; 执行包括在其上加热具有第一掺杂材料层的衬底的驱入工艺; 在执行所述驱入工艺之后执行第二沉积工艺，并且包括在所述第一掺杂材料层上形成第二掺杂材料层，其中所述第二掺杂材料层具有第二导电类型; 用激光局部加热基板，第一掺杂材料层和第二掺杂材料层的部分，以在基板的第一表面上形成接触层; 以及在所述接触层上形成第一电极，在所述基板的与所述第一表面相对的第二表面上形成第二电极。

7. 发明申请

US20120107997A1 METHOD OF MANUFACTURING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120107997A1
公开(公告)日：2012-05-03
申请号：US13239197
申请日：2011-09-21
申请人： Young-Jin KIM , Dong-Seop Kim , Doo-Youl Lee , Jun-Hyun Park , Sang-Ho Kim , Ju-Hyun Jeong , Young-Soo Kim , Chan-Bin Mo , Young-Su Kim , Myeong-Woo Kim , Sang-Joon Lee
发明人： Young-Jin KIM , Dong-Seop Kim , Doo-Youl Lee , Jun-Hyun Park , Sang-Ho Kim , Ju-Hyun Jeong , Young-Soo Kim , Chan-Bin Mo , Young-Su Kim , Myeong-Woo Kim , Sang-Joon Lee
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/18 , Y02E10/547
摘要： In a method of manufacturing a solar cell, a first dopant layer is formed on a lower surface of a substrate and a diffusion-preventing layer is formed on an upper surface of the substrate. Then, the first dopant layer is patterned to expose portions of the lower surface of the substrate, and a second dopant layer is formed on the exposed portion of the lower surface of the substrate. A third dopant layer is formed on the diffusion-preventing layer, and the substrate is heated to diffuse dopants from the first, second, and third dopant layers into the substrate, thereby forming semiconductor areas in the substrate.
摘要翻译：在制造太阳能电池的方法中，在基板的下表面上形成第一掺杂剂层，在基板的上表面形成防扩散层。然后，将第一掺杂剂层图案化以暴露衬底的下表面的部分，并且在衬底的下表面的暴露部分上形成第二掺杂剂层。在扩散防止层上形成第三掺杂剂层，并且加热衬底以将掺杂剂从第一，第二和第三掺杂剂层扩散到衬底中，从而在衬底中形成半导体区域。

8. 发明授权

US08889981B2 Photoelectric device 有权
标题翻译：光电器件
公开(公告)号：US08889981B2
公开(公告)日：2014-11-18
申请号：US13424450
申请日：2012-03-20
申请人： Doo-Youl Lee , Young-Jin Kim , Dong-Seop Kim , Chan-Bin Mo , Young-Su Kim , Young-Sang Park
发明人： Doo-Youl Lee , Young-Jin Kim , Dong-Seop Kim , Chan-Bin Mo , Young-Su Kim , Young-Sang Park
IPC分类号： H01L31/00 , H01L31/0224 , H01L31/0352 , H01L31/075 , H01L31/0747
CPC分类号： H01L31/022441 , H01L31/0352 , H01L31/0745 , H01L31/0747 , H01L31/075 , Y02E10/547 , Y02E10/548
摘要： A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.
摘要翻译：光电器件在衬底上包括第一半导体结构和第二半导体结构，并且第一半导体结构包括与第二半导体结构不同的导电类型。光电器件还包括第一半导体结构上的第一电极和第二半导体结构上的第二电极以及与第二半导体结构相邻的层间绝缘结构。层间绝缘结构将第一半导体结构与第二半导体结构分开，并将第一半导体结构与第二电极分离。

9. 发明授权

US08664015B2 Method of manufacturing photoelectric device 有权
标题翻译：制造光电器件的方法
公开(公告)号：US08664015B2
公开(公告)日：2014-03-04
申请号：US13568462
申请日：2012-08-07
申请人： Sang-Jin Park , Min-Chul Song , Sung-Chan Park , Dong-Seop Kim , Won-Gyun Kim , Sang-Won Seo
发明人： Sang-Jin Park , Min-Chul Song , Sung-Chan Park , Dong-Seop Kim , Won-Gyun Kim , Sang-Won Seo
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L21/223 , H01L21/2255 , H01L21/2256 , H01L21/268 , H01L31/02363 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.
摘要翻译：一种制造太阳能电池的方法，包括提供具有第一导电类型的半导体衬底; 执行包括形成具有不同于第一导电类型的第二导电类型的第一掺杂材料层的第一沉积工艺; 执行包括在其上加热具有第一掺杂材料层的衬底的驱入工艺; 在执行所述驱入工艺之后执行第二沉积工艺，并且包括在所述第一掺杂材料层上形成第二掺杂材料层，其中所述第二掺杂材料层具有第二导电类型; 用激光局部加热基板，第一掺杂材料层和第二掺杂材料层的部分，以在基板的第一表面上形成接触层; 以及在所述接触层上形成第一电极，在所述基板的与所述第一表面相对的第二表面上形成第二电极。

10. 发明申请

US20120149144A1 METHOD FOR MANUFACTURING SOLAR CELL 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120149144A1
公开(公告)日：2012-06-14
申请号：US13276044
申请日：2011-10-18
申请人： Myung-Su KIM , Min-Chul Song , Soon-Young Park , Dong-Seop Kim , Sung Chan Park , Yoon-Mook Kang , Tae-Jun Kim , Min-Ki Shin , Sang-Won Lee , Heung-Kyoon Lim
发明人： Myung-Su KIM , Min-Chul Song , Soon-Young Park , Dong-Seop Kim , Sung Chan Park , Yoon-Mook Kang , Tae-Jun Kim , Min-Ki Shin , Sang-Won Lee , Heung-Kyoon Lim
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.
摘要翻译：提出了一种制造太阳能电池的方法。该方法包括：在光吸收层的第一表面上形成非晶硅层; 用掺杂剂掺杂非晶硅层; 通过用激光将掺杂剂扩散到非晶硅层中形成掺杂剂层; 通过去除保留在掺杂剂层外部的掺杂剂形成半导体层; 通过使用蚀刻剂蚀刻半导体层的表面; 在所述半导体层上形成第一电极; 以及在所述光吸收层的第二表面上形成第二电极。

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