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1. 发明授权

US08500906B2 Device for jetting gas and solar cell manufacturing method using the same 失效
标题翻译：用于喷射气体的装置和使用其的太阳能电池制造方法
公开(公告)号：US08500906B2
公开(公告)日：2013-08-06
申请号：US13117431
申请日：2011-05-27
申请人： Gug-Il Jun , In-Ki Kim
发明人： Gug-Il Jun , In-Ki Kim
IPC分类号： C23C16/00
CPC分类号： H01L31/18 , C23C14/165 , C23C14/5866 , H01L31/0322 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A device for disposing a gas, the device including: a chamber; a plurality of gas jetting plates disposed in the chamber, each gas jetting plate of the plurality of gas jetting plates including a plurality of gas jetting holes disposed on a surface thereof; and a gas pipe fluidly connected to the gas jetting plate and extending outside the chamber, wherein each gas jetting plate includes a first stage, which is fluidly connected to the gas pipe, and a final stage, which includes the plurality of gas jetting holes.
摘要翻译：一种用于设置气体的装置，所述装置包括：腔室; 设置在所述室中的多个气体喷射板，所述多个气体喷射板中的每个气体喷射板包括设置在其表面上的多个气体喷射孔; 以及气体管道，其流体地连接到气体喷射板并延伸到室外，其中每个气体喷射板包括流体连接到气体管道的第一级，以及包括多个气体喷射孔的最后一级。

2. 发明申请

US20100154872A1 SOLAR CELL AND METHOD OF FABRICATING THE SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100154872A1
公开(公告)日：2010-06-24
申请号：US12635660
申请日：2009-12-10
申请人： Gug-Il JUN , Woo-Su Lee , Dong-Seop Kim , Jin-Seock Kim , Byoung-Dong Kim , Kang-Hee Lee , Dong-Gi Ahn , Byung-Joo Lee , Hyoung-Jin Park , In-Ki Kim
发明人： Gug-Il JUN , Woo-Su Lee , Dong-Seop Kim , Jin-Seock Kim , Byoung-Dong Kim , Kang-Hee Lee , Dong-Gi Ahn , Byung-Joo Lee , Hyoung-Jin Park , In-Ki Kim
IPC分类号： H01L31/0296 , H01L31/18 , H01L21/06
CPC分类号： C23C14/14 , C23C14/5866 , H01L31/0322 , H01L31/03923 , H01L31/065 , Y02E10/52 , Y02E10/541 , Y02E10/544
摘要： A solar cell and a method of fabricating the same are provided according to one or more embodiments. According to an embodiment, the solar cell includes a substrate, a back electrode layer formed on the substrate, a light absorbing layer formed on the back electrode layer, and a transparent electrode layer formed on the light absorbing layer, wherein the light absorbing layer is comprised of copper (Cu), gallium (Ga), indium (In), sulfur (S), and selenium (Se) and includes a first concentration region in which concentrations of sulfur (S) gradually decrease in the light absorbing layer going in a first direction from the back electrode layer to the transparent electrode layer.
摘要翻译：根据一个或多个实施例提供太阳能电池及其制造方法。根据一个实施例，太阳能电池包括基板，形成在基板上的背面电极层，形成在背面电极层上的光吸收层和形成在光吸收层上的透明电极层，其中光吸收层是包括铜（Cu），镓（Ga），铟（In），硫（S）和硒（Se）组成的第一浓度区域，其中吸光层中硫（S）的浓度逐渐降低从背电极层到透明电极层的第一方向。

3. 发明申请

US20050240033A1 Hydrogenation catalyst, preparation thereof, and method for the preparation of gamma-butyrolactone from maleic anhydride using the catalyst 失效
标题翻译：氢化催化剂及其制备方法以及使用催化剂从马来酸酐制备γ-丁内酯的方法
公开(公告)号：US20050240033A1
公开(公告)日：2005-10-27
申请号：US10512041
申请日：2003-04-18
申请人： Jung-Ho Lee , Hyung-Rok Kim , Yo-Han Han , Suk-Jong Jeong , Nak-Mo Choi , Hang-Soo Woo , In-Ki Kim
发明人： Jung-Ho Lee , Hyung-Rok Kim , Yo-Han Han , Suk-Jong Jeong , Nak-Mo Choi , Hang-Soo Woo , In-Ki Kim
IPC分类号： C07D307/33 , B01J23/00 , B01J23/80 , B01J23/889 , B01J37/03 , B01J37/04 , B01J37/10 , C07B61/00 , C07D305/12
CPC分类号： B01J37/036 , B01J23/002 , B01J23/8892 , B01J2523/00 , B01J2523/17 , B01J2523/27 , B01J2523/41 , B01J2523/72
摘要： The present invention relates to a hydrogenation catalyst represented by the following formula 1, a method for the preparation thereof, and a method for preparing gamma-butyrolactone using this catalyst. The method for preparing gamma-butyrolactone from maleic anhydride using the catalyst of the invention prepared by stabilizing the precursor particles of copper oxide, zinc oxide, and manganese oxide with a silica exhibits high selectivity, high yield, and high productivity under the operation conditions of a low molar ratio of hydrogen with regard to the reactants, and enables the preparation of gamma-butyrolactone from maleic anhydride with long-term stability without requiring frequent re-activation of the catalyst: Formula (1) CuO(a)ZnO(b)MnO2(c)SiO2(d) wherein a, b, c, and d are represented on the basis of weight, wherein a is 20 to 90, b is 0.01 to 10, c is 0.01 to 5, and d is 5 to 50.
摘要翻译：本发明涉及由下式1表示的氢化催化剂，其制备方法和使用该催化剂制备γ-丁内酯的方法。使用本发明的催化剂由马来酸酐制备γ-丁内酯的方法，其通过用二氧化硅稳定氧化铜，氧化锌和氧化锰的前体颗粒制备，在操作条件下表现出高选择性，高产率和高生产率氢的相对于反应物的摩尔比低，能够长时间稳定地从马来酸酐制备γ-丁内酯，而不需要频繁地重新催化催化剂：式（1）CuO（a）ZnO（b） MnO 2（c）SiO 2（d）其中a，b，c和d以重量为基准表示，其中a为20至90，b为 0.01〜10，c为0.01〜5，d为5〜50。

4. 发明授权

US5992575A Personal rapid transit braking systems 失效
标题翻译：个人快速通行制动系统
公开(公告)号：US5992575A
公开(公告)日：1999-11-30
申请号：US952654
申请日：1998-01-30
申请人： In Ki Kim
发明人： In Ki Kim
IPC分类号： F16D63/00 , B61B13/06 , B61H7/12 , B61H9/00 , B61H11/00 , B61H7/00
CPC分类号： B61H7/12
摘要： The present invention relates to a Personal Rapid Transit system for transporting passengers along a pre-set guideway, and more particularly relates to a future Personal Rapid Transit vehicle braking system. A conventional braking system can not provide the large braking force required for very short headway operation under the effect of weather and environmental conditions due to variations in the available coefficients of friction at the running surfaces. In particular, the Personal Rapid Transit which is a public transportation system can not adopt the conventional braking system since the vehicles are powered by linear motors and are independent of traction. The PRT brake system comprises brake reaction rails (120) mounted on each inside of the guideway and brakes (300) acting on these brake reaction rails (120) as calipers. The brakes are automatically actuated when electric power supply is cut off, and thus can serve as parking brakes and emergency brakes. Since the braking system of the present invention is supplied with power via the strain energy stored in steel spring members, no external power source for its operation is required. Furthermore, the system comprises a redundant failure monitored brake releasing unit (380) which is driven by duplicate redundant electric motors. Accordingly, the PRT braking system of the present invention represents a highly efficient fail-safe parking or emergency brake.
摘要翻译： PCT No.PCT / KR97 / 00044 Sec。 371日期1998年1月30日 102（e）日期1998年1月30日PCT 1997年3月24日PCT公布。公开号WO97 / 35757 日期1997年10月2日本发明涉及一种用于沿着预设导轨运输乘客的个人快速公交系统，更具体地涉及未来的个人快速公交车辆制动系统。传统的制动系统由于在行驶表面上可用的摩擦系数的变化，不能在天气和环境条件的作用下提供非常短的前进作业所需的大的制动力。特别地，作为公共交通系统的个人快速公交系统不能采用传统的制动系统，因为车辆由直线电动机驱动并且独立于牵引力。 PRT制动系统包括安装在导轨的每个内部的制动器反作用轨（120）和作为卡钳作用在这些制动反作用轨道（120）上的制动器（300）。当电源切断时，制动器自动启动，因此可以作为驻车制动器和紧急制动器。由于本发明的制动系统通过存储在钢弹簧构件中的应变能被供给电力，因此不需要用于其操作的外部电源。此外，该系统包括由重复的冗余电动机驱动的冗余故障监视制动释放单元（380）。因此，本发明的PRT制动系统表示高效率的故障安全停车或紧急制动。

5. 发明申请

US20120094423A1 DEVICE FOR JETTING GAS AND SOLAR CELL MANUFACTURING METHOD USING THE SAME 失效
标题翻译：用于喷射气体的装置和使用该气体的太阳能电池制造方法
公开(公告)号：US20120094423A1
公开(公告)日：2012-04-19
申请号：US13117431
申请日：2011-05-27
申请人： Gug-Il JUN , In-Ki KIM
发明人： Gug-Il JUN , In-Ki KIM
IPC分类号： H01L31/18 , B67D7/06 , C23C16/455
CPC分类号： H01L31/18 , C23C14/165 , C23C14/5866 , H01L31/0322 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A device for disposing a gas, the device including: a chamber; a plurality of gas jetting plates disposed in the chamber, each gas jetting plate of the plurality of gas jetting plates including a plurality of gas jetting holes disposed on a surface thereof; and a gas pipe fluidly connected to the gas jetting plate and extending outside the chamber, wherein each gas jetting plate includes a first stage, which is fluidly connected to the gas pipe, and a final stage, which includes the plurality of gas jetting holes.
摘要翻译：一种用于设置气体的装置，所述装置包括：腔室; 设置在所述室中的多个气体喷射板，所述多个气体喷射板中的每个气体喷射板包括设置在其表面上的多个气体喷射孔; 以及气体管道，其流体地连接到气体喷射板并延伸到室外，其中每个气体喷射板包括流体连接到气体管道的第一级，以及包括多个气体喷射孔的最后一级。

6. 发明申请

US20120055544A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120055544A1
公开(公告)日：2012-03-08
申请号：US13222433
申请日：2011-08-31
申请人： Dong-Gi AHN , Kwang Soo Huh , Hyong Jin Park , In-ki Kim , Su Jin Kim
发明人： Dong-Gi AHN , Kwang Soo Huh , Hyong Jin Park , In-ki Kim , Su Jin Kim
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022466 , H01L31/02167 , H01L31/022483 , H01L31/046 , H01L31/0465 , Y02E10/50
摘要： A solar cell with improved energy efficiency is presented. The solar cell includes a substrate having a plurality of cell areas separated by a cell separation area, back electrodes spaced apart from each other by a gap, a light absorbing layer, a transparent electrode layer, and a buffer layer. Each of the back electrodes is disposed over neighboring cell areas and a cell separation area. The light absorbing layer is disposed on the back electrodes and in the gap to absorb incident light. A contact hole extends through the light absorbing layer to a portion of the back electrodes. The transparent electrode layer disposed on the light absorbing layer connects to the back electrodes through the contact hole. The buffer layer is disposed between the light absorbing layer and the transparent electrode layer to cover upper and side surfaces of the light absorbing layer.
摘要翻译：提出了一种提高能源效率的太阳能电池。太阳能电池包括具有由电池分离区域隔开的多个电池区域的基板，通过间隙彼此间隔开的背电极，光吸收层，透明电极层和缓冲层。每个背电极设置在相邻的电池区域和电池分离区域上。光吸收层设置在背电极和间隙中以吸收入射光。接触孔延伸穿过光吸收层到背电极的一部分。设置在光吸收层上的透明电极层通过接触孔与后电极连接。缓冲层设置在光吸收层和透明电极层之间以覆盖光吸收层的上表面和侧表面。

7. 发明授权

US07493148B2 Battery charging device for a mobile apparatus using an ear-microphone jack 有权
标题翻译：使用耳麦麦克风插孔的移动设备的电池充电装置
公开(公告)号：US07493148B2
公开(公告)日：2009-02-17
申请号：US10915941
申请日：2004-08-06
申请人： Min-Woong Ha , In-Ki Kim
发明人： Min-Woong Ha , In-Ki Kim
IPC分类号： H04B1/38 , H04M1/00
CPC分类号： H02J7/0055 , H02J7/0044 , H02J7/0054 , H02J2007/006
摘要： A battery charging device using an ear-microphone jack of a mobile apparatus. The battery charging device comprises a battery; an ear-microphone socket having a microphone contact, an earphone contact, and a common ground contact; a modem chip having a microphone input port connected to the microphone contact or an internal microphone and an earphone output port connected to the earphone contact or an internal speaker; and a cutting-off element connected between a power supply contact and the battery, for providing a charging voltage provided via the power supply contact to the battery and preventing a current from flowing backward from the battery to the modem chip. A power supply device comprises a plug having terminals connectable to contacts of the ear-microphone socket; and a power source connector for connecting a power supply source to the plug.
摘要翻译：一种使用移动装置的耳麦式插座的电池充电装置。电池充电装置包括电池; 具有麦克风触点的耳麦式插座，耳机触点和公共接地触点; 调制解调器芯片具有连接到麦克风接点的麦克风输入端口或连接到耳机接点或内部扬声器的内部麦克风和耳机输出端口; 以及连接在电源触点和电池之间的切断元件，用于通过电源触点向电池提供充电电压，并防止电流从电池向后流向调制解调器芯片。电源装置包括具有可连接到耳麦克插座的触点的端子的插头; 以及用于将电源连接到插头的电源连接器。

8. 发明申请

US20080293699A1 Inhibitors of thapsigargin-induced cell death 审中-公开
标题翻译：毒胡萝卜素诱导的细胞死亡抑制剂
公开(公告)号：US20080293699A1
公开(公告)日：2008-11-27
申请号：US12154544
申请日：2008-05-23
申请人： John C. Reed , In-Ki Kim
发明人： John C. Reed , In-Ki Kim
IPC分类号： A61K31/5513 , C12Q1/02 , C07D243/38 , A61K31/495 , C12N5/02 , A61K31/496 , C07D241/04 , C07D403/10
CPC分类号： C07D243/38 , A61K31/495 , A61K31/496 , A61K31/5513 , C07D295/192 , C07D403/06 , C07D403/10 , C07D513/04 , C12N5/0623 , C12N2503/02
摘要： Methods for screening for inhibitors of endoplasmic reticulum (ER) stress are provided. These methods involve the addition of thapsigargin, which induces ER stress, and a test agent to mammalian cells in multi-well plates. Cell survival can be readily monitored by measuring intracellular ATP content using a bioluminescent reagent. Screening a commercially available library of 50,000 compounds led to the identification of 93 hit compounds that were subjected to secondary assays to confirm their ability to rescue cells from thapsigargin-induced cell death.
摘要翻译：提供了筛选内质网（ER）应激抑制剂的方法。这些方法涉及添加诱导ER应激的毒胡萝卜素，以及多孔板中的哺乳动物细胞的测试试剂。使用生物发光试剂测量细胞内ATP含量可以容易地监测细胞存活。筛选50,000种化合物的商业化库产生93种命中化合物的鉴定，这些化合物进行二次测定，以确认其从毒胡萝卜素诱导的细胞死亡中拯救细胞的能力。

9. 发明申请

US20080246159A1 PLANARIZED PASSIVATION LAYER FOR SEMICONDUCTOR DEVICES 有权
标题翻译：用于半导体器件的平面钝化层
公开(公告)号：US20080246159A1
公开(公告)日：2008-10-09
申请号：US12062534
申请日：2008-04-04
申请人： Sin Leng LIM , In Ki KIM , Jong Sung PARK , Min Hwan KIM , Wei LU
发明人： Sin Leng LIM , In Ki KIM , Jong Sung PARK , Min Hwan KIM , Wei LU
IPC分类号： H01L23/48 , H01L21/00
CPC分类号： G02F1/1333 , G02F1/136277 , G02F2001/133357 , Y10S438/954
摘要： A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.
摘要翻译：半导体器件包括在衬底上具有电介质层和器件层的衬底。设备层具有开口。第一和第二子层设置在器件层上并对开口进行排列。第二子层用作平坦化的停止层，以为半导体器件提供基本平坦化的顶表面。

10. 发明授权

US07166901B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07166901B2
公开(公告)日：2007-01-23
申请号：US10950828
申请日：2004-09-27
申请人： Naoto Inoue , Hitomi Sakurai , Min Paek , Sang Yeon Kim , In Ki Kim
发明人： Naoto Inoue , Hitomi Sakurai , Min Paek , Sang Yeon Kim , In Ki Kim
IPC分类号： H01L29/00
CPC分类号： H01L27/0921 , H01L21/76237 , H01L21/823814 , H01L21/823878
摘要： A semiconductor device comprises a semiconductor substrate having a high voltage region and a low voltage region, at least a pair of adjacent high voltage MOS transistors disposed on the high voltage region of the semiconductor substrate, and low voltage MOS transistors disposed on the low voltage region of the semiconductor substrate. A first element isolator comprises a first shallow trench disposed on a surface of the low voltage, region of the semiconductor substrate, and a first dielectric embedded in the first shallow trench. A pair of second element isolators comprises two second shallow trenches spaced apart at an interval between a source region or a drain region of the pair of the adjacent high voltage MOS transistors and a source or a drain region of the other of the pair of the adjacent high voltage MOS transistors, and a second dielectric embedded in each of the second shallow trenches. The second shallow trenches are disposed on a surface of the high voltage region of the semiconductor substrate. A channel cut region having a high impurity concentration is disposed on the surface of the substrate between the second shallow trenches.
摘要翻译：半导体器件包括具有高电压区域和低电压区域的半导体衬底，设置在半导体衬底的高电压区域上的至少一对相邻的高压MOS晶体管和设置在低电压区域上的低压MOS晶体管的半导体衬底。第一元件隔离器包括设置在半导体衬底的低电压区域的表面上的第一浅沟槽和嵌入在第一浅沟槽中的第一电介质。一对第二元件隔离器包括在一对相邻高压MOS晶体管的源极区域或漏极区域之间间隔开的两个第二浅沟槽和一对相邻的高压MOS晶体管中的另一个的源极或漏极区域高电压MOS晶体管和嵌入在每个第二浅沟槽中的第二电介质。第二浅沟槽设置在半导体衬底的高压区域的表面上。具有高杂质浓度的沟道切割区域设置在第二浅沟槽之间的衬底表面上。

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