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1. 发明申请

US20080090402A1 DENSIFYING SURFACE OF POROUS DIELECTRIC LAYER USING GAS CLUSTER ION BEAM 审中-公开
标题翻译：使用气体离子束对多孔介质层的表面进行测量
公开(公告)号：US20080090402A1
公开(公告)日：2008-04-17
申请号：US11536893
申请日：2006-09-29
申请人： Griselda Bonilla , Shyng-Tsong Chen , John A. Fitzsimmons , Sanjay Mehta , Shom Ponoth
发明人： Griselda Bonilla , Shyng-Tsong Chen , John A. Fitzsimmons , Sanjay Mehta , Shom Ponoth
IPC分类号： H01L21/44
CPC分类号： H01L21/76825 , H01J2237/0812 , H01L21/76883
摘要： A method of fabricating and a structure of an integrated circuit (IC) incorporating a porous dielectric layer are disclosed. A metal line is formed in the porous dielectric layer. A gas cluster ion beam process is applied to the porous dielectric layer so that an upper portion of the dielectric layer is densified to be not porous or non-interconnected low porous, while a lower portion of the porous dielectric layer still maintains its ultra-low dielectric constant after the gas cluster ion beam process.
摘要翻译：公开了一种制造方法和结合有多孔介电层的集成电路（IC）的结构。在多孔介电层中形成金属线。将气体簇离子束工艺应用于多孔介电层，使得电介质层的上部被致密化为不是多孔的或不互连的低多孔，而多孔介电层的下部仍保持其超低气体离子束过程后的介电常数。

2. 发明申请

US20130171829A1 Titanium-Nitride Removal 有权
标题翻译：去除钛 - 氮化物
公开(公告)号：US20130171829A1
公开(公告)日：2013-07-04
申请号：US13343190
申请日：2012-01-04
申请人： John A. Fitzsimmons , Shyng-Tsong Chen , David L. Rath , Muthumanickam Sankarapandian , Oscar van der Straten
发明人： John A. Fitzsimmons , Shyng-Tsong Chen , David L. Rath , Muthumanickam Sankarapandian , Oscar van der Straten
IPC分类号： H01L21/3065 , C11D7/60
CPC分类号： C09K13/00 , H01L21/02063 , H01L21/31144 , H01L21/32134 , H01L21/76802 , H01L21/76804
摘要： A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present invention decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result.
摘要翻译：一种去除不需要的金属硬掩模的化学溶液，但仍然对器件布线冶金和电介质材料具有选择性。本发明通过在接收结构金属化之前选择性去除金属硬掩模而不损害限定半导体器件所需的任何现有金属或介电材料，从而降低纵横比，例如，铜冶金或器件电介质。因此，将导致金属填充物的改进的纵横比，而不会对设备的限定的金属接收结构引入任何过大的梯形横截面特征。

3. 发明授权

US08835326B2 Titanium-nitride removal 有权
标题翻译：氮化钛去除
公开(公告)号：US08835326B2
公开(公告)日：2014-09-16
申请号：US13343190
申请日：2012-01-04
申请人： John A. Fitzsimmons , Shyng-Tsong Chen , David L. Rath , Muthumanickam Sankarapandian , Oscar van der Straten
发明人： John A. Fitzsimmons , Shyng-Tsong Chen , David L. Rath , Muthumanickam Sankarapandian , Oscar van der Straten
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/02
CPC分类号： C09K13/00 , H01L21/02063 , H01L21/31144 , H01L21/32134 , H01L21/76802 , H01L21/76804
摘要： A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present invention decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result.
摘要翻译：一种去除不需要的金属硬掩模的化学溶液，但仍然对器件布线冶金和电介质材料具有选择性。本发明通过在接收结构金属化之前选择性去除金属硬掩模而不损害限定半导体器件所需的任何现有金属或介电材料，从而降低纵横比，例如，铜冶金或器件电介质。因此，将导致金属填充物的改进的纵横比，而不会对设备的限定的金属接收结构引入任何过大的梯形横截面特征。

4. 发明申请

US20090008361A1 OXIDANT AND PASSIVANT COMPOSITION AND METHOD FOR USE IN TREATING A MICROELECTRONIC STRUCTURE 失效
标题翻译：氧化剂和有害成分及其在微电子结构处理中的应用
公开(公告)号：US20090008361A1
公开(公告)日：2009-01-08
申请号：US11774041
申请日：2007-07-06
申请人： John A. Fitzsimmons , David L. Rath , Shom Ponoth , Michael Beck
发明人： John A. Fitzsimmons , David L. Rath , Shom Ponoth , Michael Beck
IPC分类号： H01B13/00 , B05D5/12 , C09K13/00 , C09K13/08
CPC分类号： C23G1/103 , H01L21/02063
摘要： A composition that may be used for cleaning a metal containing conductor layer, such as a copper containing conductor layer, within a microelectronic structure includes an aqueous acid, along with an oxidant material and a passivant material contained within the aqueous acid. The composition does not include an abrasive material. The composition is particularly useful for cleaning a residue from a copper containing conductor layer and an adjoining dielectric layer that provides an aperture for accessing the copper containing conductor layer within a microelectronic structure.
摘要翻译：微电子结构中可用于清洗含金属导体层（例如含铜导电体层）的组合物包括酸水溶液以及氧化剂材料和含水酸性物质中的钝化材料。组合物不包括研磨材料。所述组合物特别可用于从含铜导体层和邻接的介电层清洁残留物，所述相邻介电层提供用于在微电子结构内进入含铜导体层的孔。

5. 发明授权

US07670497B2 Oxidant and passivant composition and method for use in treating a microelectronic structure 失效
标题翻译：氧化剂和钝化剂组合物和用于处理微电子结构的方法
公开(公告)号：US07670497B2
公开(公告)日：2010-03-02
申请号：US11774041
申请日：2007-07-06
申请人： John A. Fitzsimmons , David L. Rath , Shom Ponoth , Michael Beck
发明人： John A. Fitzsimmons , David L. Rath , Shom Ponoth , Michael Beck
IPC分类号： H01B13/00
CPC分类号： C23G1/103 , H01L21/02063
摘要： A composition that may be used for cleaning a metal containing conductor layer, such as a copper containing conductor layer, within a microelectronic structure includes an aqueous acid, along with an oxidant material and a passivant material contained within the aqueous acid. The composition does not include an abrasive material. The composition is particularly useful for cleaning a residue from a copper containing conductor layer and an adjoining dielectric layer that provides an aperture for accessing the copper containing conductor layer within a microelectronic structure.
摘要翻译：微电子结构中可用于清洗含金属导体层（例如含铜导电体层）的组合物包括酸水溶液以及氧化剂材料和含水酸性物质中的钝化材料。组合物不包括研磨材料。所述组合物特别可用于从含铜导体层和邻接的介电层清洁残留物，所述相邻介电层提供用于在微电子结构内进入含铜导体层的孔。

6. 发明授权

US08796150B2 Bilayer trench first hardmask structure and process for reduced defectivity 有权
标题翻译：双层沟槽第一硬掩模结构和减少缺陷的过程
公开(公告)号：US08796150B2
公开(公告)日：2014-08-05
申请号：US13012166
申请日：2011-01-24
申请人： Hakeem B. S. Akinmade-Yusuff , Samuel Sung Shik Choi , Edward R. Engbrecht , John A. Fitzsimmons
发明人： Hakeem B. S. Akinmade-Yusuff , Samuel Sung Shik Choi , Edward R. Engbrecht , John A. Fitzsimmons
IPC分类号： H01L21/311 , H01L21/32 , H01L29/06
CPC分类号： H01L21/31144 , H01L21/76804 , H01L21/76807
摘要： A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.
摘要翻译：用于将光刻图案转印到基板中的方法和结构包括在电介质基底上形成电介质硬掩模层。在介电硬掩模层上形成金属硬掩模层。在金属硬掩模层上形成保护性覆盖硬掩模层或覆盖膜，并且在覆盖层上形成用于图案转印的光刻结构。使用限定的光刻结构将图案转移到电介质基板中。在后续处理过程中，可以移除加盖硬掩模层。

7. 发明申请

US20130334691A1 SIDEWALLS OF ELECTROPLATED COPPER INTERCONNECTS 有权
标题翻译：电镀铜互连的边界
公开(公告)号：US20130334691A1
公开(公告)日：2013-12-19
申请号：US13525823
申请日：2012-06-18
申请人： Mukta G. Farooq , John A. Fitzsimmons , Troy L. Graves-Abe
发明人： Mukta G. Farooq , John A. Fitzsimmons , Troy L. Graves-Abe
IPC分类号： H01L23/52 , H01L21/283
CPC分类号： H05K3/423 , H01L21/76844 , H01L21/76846 , H01L21/76858 , H01L21/76898 , H01L23/481 , H01L23/53209 , H01L23/53214 , H01L23/53238 , H01L23/53242 , H01L23/53257 , H01L2924/0002 , Y10T428/12764 , H01L2924/00
摘要： A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure including a diffusion barrier covering the sidewall and a fill composed of conductive material. The structure including a first intermetallic compound separating the diffusion barrier from the conductive material, the first intermetallic compound comprises an alloying material and the conductive material, and is mechanically bound to the conductive material, the alloying material is at least one of the materials selected from the group of chromium, tin, nickel, magnesium, cobalt, aluminum, manganese, titanium, zirconium, indium, palladium, and silver; and a first high friction interface located between the diffusion barrier and the first intermetallic compound and parallel to the sidewall of the opening, wherein the first high friction interface results in a mechanical bond between the diffusion barrier and the first intermetallic compound.
摘要翻译：一种形成在开口中的结构，其具有由非金属材料限定的基本上垂直的侧壁，并且具有由导电垫限定的基本上水平的底部，该结构包括覆盖侧壁的扩散阻挡层和由导电材料构成的填充物。所述结构包括将所述扩散阻挡物与所述导电材料分离的第一金属间化合物，所述第一金属间化合物包括合金材料和所述导电材料，并且机械地结合到所述导电材料上，所述合金材料是选自以下的至少一种材料：铬，锡，镍，镁，钴，铝，锰，钛，锆，铟，钯和银的组合; 以及位于所述扩散阻挡层和所述第一金属间化合物之间且平行于所述开口的侧壁的第一高摩擦界面，其中所述第一高摩擦界面导致所述扩散阻挡层和所述第一金属间化合物之间的机械结合。

8. 发明授权

US08288271B2 Method for reworking antireflective coating over semiconductor substrate 有权
标题翻译：在半导体衬底上重新制造抗反射涂层的方法
公开(公告)号：US08288271B2
公开(公告)日：2012-10-16
申请号：US12610679
申请日：2009-11-02
申请人： Hakeem Akinmade Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
发明人： Hakeem Akinmade Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
IPC分类号： H01L33/44 , H01L51/00
CPC分类号： H01L21/31138 , G03F7/091 , G03F7/422 , H01L21/0276 , H01L21/31144
摘要： A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
摘要翻译：一种用于在半导体衬底上再加工抗反射涂层（ARC）层的方法和结构。该方法包括提供具有材料层的基板，在材料层上形成平坦化层，在平坦化层上形成有机溶剂可溶层，在有机溶剂可溶层上形成ARC层，在ARC层中形成图案，并且用有机溶剂除去有机溶剂可溶层和ARC层，同时留下平坦化层不被除去。该结构包括具有材料层的基板，材料层上的平坦化层，平坦化层上的有机溶剂可溶层和有机溶剂可溶层上的ARC层。

9. 发明申请

US20110193199A1 ELECTROMIGRATION IMMUNE THROUGH-SUBSTRATE VIAS 有权
标题翻译：电磁辐射穿过基底VIAS
公开(公告)号：US20110193199A1
公开(公告)日：2011-08-11
申请号：US12702463
申请日：2010-02-09
申请人： Ronald G. Filippi , John A. Fitzsimmons , Kevin Kolvenbach , Ping-Chuan Wang
发明人： Ronald G. Filippi , John A. Fitzsimmons , Kevin Kolvenbach , Ping-Chuan Wang
IPC分类号： H01L23/48 , H01L21/50
CPC分类号： H01L25/0657 , H01L21/76898 , H01L24/13 , H01L24/16 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/9202 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/00 , H01L2224/05552
摘要： A through-substrate via (TSV) structure includes at least two electrically conductive via segments embedded in a substrate and separated from each other by an electrically conductive barrier layer therebetween. The length of each individual conductive via segment is typically equal to, or less than, the Blech length of the conductive material so that the stress-induced back flow force, generated by each conductive barrier layer, cancels the electromigration force in each conductive via segment. Consequently, the TSV structures are immune to electromigration, and provide reliable electrical connections among a chips stacked in 3 dimensions.
摘要翻译：贯穿衬底通孔（TSV）结构包括至少两个嵌入衬底中的导电通路段，并且通过它们之间的导电阻挡层彼此分离。每个单独的导电通路段的长度通常等于或小于导电材料的漂浮长度，使得由每个导电阻挡层产生的应力引起的后向流动力抵消每个导电通路段中的电迁移力。因此，TSV结构免于电迁移，并且在三维堆叠的芯片之间提供可靠的电连接。

10. 发明申请

US20110101507A1 METHOD AND STRUCTURE FOR REWORKING ANTIREFLECTIVE COATING OVER SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于在半导体衬底上重新制造抗反射涂层的方法和结构
公开(公告)号：US20110101507A1
公开(公告)日：2011-05-05
申请号：US12610679
申请日：2009-11-02
申请人： Hakeem Akinmade Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
发明人： Hakeem Akinmade Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
IPC分类号： H01L23/28 , H01L21/312
CPC分类号： H01L21/31138 , G03F7/091 , G03F7/422 , H01L21/0276 , H01L21/31144
摘要： A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
摘要翻译：一种用于在半导体衬底上再加工抗反射涂层（ARC）层的方法和结构。该方法包括提供具有材料层的基板，在材料层上形成平坦化层，在平坦化层上形成有机溶剂可溶层，在有机溶剂可溶层上形成ARC层，在ARC层中形成图案，并且用有机溶剂除去有机溶剂可溶层和ARC层，同时留下平坦化层不被除去。该结构包括具有材料层的基板，材料层上的平坦化层，平坦化层上的有机溶剂可溶层和有机溶剂可溶层上的ARC层。

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