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    • 8. 发明申请
    • INTEGRATED CIRCUIT INTERCONNECT STRUCTURE
    • 集成电路互连结构
    • US20110254168A1
    • 2011-10-20
    • US12760594
    • 2010-04-15
    • Hanyi DingRonald G. FilippiJong-Ru GuoPing-Chuan Wang
    • Hanyi DingRonald G. FilippiJong-Ru GuoPing-Chuan Wang
    • H01L23/522H01L21/768G06F17/50
    • H01L23/528H01L23/5286H01L2924/0002H01L2924/00
    • An integrated circuit (IC) interconnect structure that includes a first via positioned in a dielectric and coupled to a high current device at one end, and a buffer metal segment positioned in a dielectric and coupled to the first via at an opposite end thereof. The buffer metal segment includes a plurality of electrically insulating inter-dielectric (ILD) pads forming an ILD cheesing pattern thereon, to direct current. The IC interconnect structure further includes a second via positioned in a dielectric formed over the buffer metal segment and coupled to the buffer metal segment at one end and a metal power line formed in a dielectric and coupled to the second via at an opposite end thereof. The use of the ILD pads on the buffer metal segment enables a more even distribution of current along the metal power line.
    • 一种集成电路(IC)互连结构,其包括位于电介质中并且在一端耦合到高电流器件的第一通孔和位于电介质中的缓冲金属段,并在其相对端耦合到第一通孔。 缓冲金属段包括在其上形成ILD干酪糖化图案的多个电绝缘介电层(ILD)焊盘以引导电流。 IC互连结构还包括位于介质上的第二通孔,该电介质形成在缓冲金属段上并且在一端耦合到缓冲金属段,并且金属电源线形成在电介质中,并在其相对端耦合到第二通孔。 缓冲金属片段上的ILD焊盘的使用使得能够沿着金属电源线更均匀地分布电流。