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1. 发明授权

US06599447B2 Zirconium-doped BST materials and MOCVD process forming same 失效
公开(公告)号：US06599447B2
公开(公告)日：2003-07-29
申请号：US09726183
申请日：2000-11-29
申请人： Gregory T. Stauf , Philip S. Chen , Jeffrey F. Roeder
发明人： Gregory T. Stauf , Philip S. Chen , Jeffrey F. Roeder
IPC分类号： H01B108
CPC分类号： C23C16/409 , H01L21/31691
摘要： A Zr-doped (Ba,Sr)TiO3 perovskite crystal material dielectric thin film. Such dielectric thin film is characterized by at least one of the characteristics including: (a) a breakdown strength of at least 1.3 MV/cm; (b) a leakage current of not more than 1×10−3 A/cm2 under applied voltage of about ±3V or above and at temperature of about 100° C. or above; and (c) an energy storage density of at least 15 J/cc. The dielectric thin film comprises zirconium dopant in the amount of 0.5% to 50% by total weight of the Zr-doped (Ba,Sr)TiO3 perovskite crystal material, preferably 2-15%, more preferably 4% to 14%, and most preferably 5% to 12%. Such dielectric thin film in a preferred aspect is deposited by a MOCVD process using metal precursors Ba(thd)2-polyamine, Sr(thd)2-polyamine, Zr(thd)4, and Ti(OiPr)2(thd)2 at a deposition temperature in the range from about 560° C. to 700° C.

2. 发明申请

US20070281476A1 Methods for forming thin copper films and structures formed thereby 审中-公开
标题翻译：用于形成薄铜膜的方法及由此形成的结构
公开(公告)号：US20070281476A1
公开(公告)日：2007-12-06
申请号：US11446339
申请日：2006-06-02
申请人： Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon , Valery M. Dubin , Harsono S. Simka , Joseph H. Han , Bryan C. Hendrix , Gregory T. Stauf , Jeffrey F. Roeder , Tiannu Chen , Chongying Xu , Thomas H. Baum
发明人： Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon , Valery M. Dubin , Harsono S. Simka , Joseph H. Han , Bryan C. Hendrix , Gregory T. Stauf , Jeffrey F. Roeder , Tiannu Chen , Chongying Xu , Thomas H. Baum
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/45525 , C23C16/45553 , C23C16/56
摘要： Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a thin conformal copper layer on a surface by utilizing a formation temperature below about 125 degrees Celsius.
摘要翻译：描述了形成微电子结构的方法和相关结构。那些方法可以包括通过利用低于约125摄氏度的地层温度在表面上形成薄的共形铜层。

3. 发明申请

US20090305458A1 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 有权
标题翻译：用于金属薄膜CVD / ALD的抗反应和锗复合物
公开(公告)号：US20090305458A1
公开(公告)日：2009-12-10
申请号：US12307101
申请日：2007-03-12
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/06 , C07F7/30 , C09D5/00
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

4. 发明授权

US06277436B1 Liquid delivery MOCVD process for deposition of high frequency dielectric materials 有权
标题翻译：用于沉积高频电介质材料的液体输送MOCVD工艺
公开(公告)号：US06277436B1
公开(公告)日：2001-08-21
申请号：US09216673
申请日：1998-12-18
申请人： Gregory T. Stauf , Jeffrey F. Roeder , Thomas H. Baum
发明人： Gregory T. Stauf , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： C23C1640
CPC分类号： H01L28/55 , C23C16/40 , C23C16/4481 , H01L21/31691 , H01L27/10852
摘要： A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100° C. to about 300° C. and carried via a carrier gas such as argon, nitrogen, helium, ammonia or the like, into a chemical vapor deposition reactor wherein the precursor vapor is mixed with an oxidizing co-reactant gas such as oxygen, ozone, N2O, etc., to deposit the high dielectric metal oxide film on the substrate at a temperature of from about 400° C. to about 1200° C. at a chemical vapor deposition chamber pressure of from about 0.1 torr to about 760 torr. Such process may for example be employed to form a (Ba,Sr) titanate dielectric material wherein at least 60 atomic % of the total metal content of the oxide is titanium. The high dielectric material of the invention may be used to form capacitive microelectronic device structures for applications such as dynamic random access memories and high frequency capacitors.
摘要翻译：用于沉积诸如（Ba，Sr）钛酸盐和（Zr，Sn）钛酸盐的电介质材料的液体输送MOCVD方法，其中金属源化合物溶解或悬浮在溶剂中并在约100℃的温度下闪蒸至约300℃，并通过诸如氩气，氮气，氦气，氨等的载气进入化学气相沉积反应器，其中前体蒸气与氧气，臭氧，N 2 O等氧化性共反应气体混合等等，以在约0.1托至约760托的化学气相沉积室压力下在约400℃至约1200℃的温度下将高介电金属氧化物膜沉积在基底上。这种方法可以例如用于形成（Ba，Sr）钛酸盐电介质材料，其中氧化物的总金属含量的至少60原子％为钛。本发明的高介电材料可用于形成用于例如动态随机存取存储器和高频电容器的应用的电容微电子器件结构。

5. 发明授权

US08268665B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films 有权
标题翻译：用于金属薄膜的CVD / ALD的锑和锗络合物
公开(公告)号：US08268665B2
公开(公告)日：2012-09-18
申请号：US13168979
申请日：2011-06-26
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

6. 发明授权

US08008117B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films 有权
标题翻译：用于金属薄膜的CVD / ALD的锑和锗络合物
公开(公告)号：US08008117B2
公开(公告)日：2011-08-30
申请号：US12860906
申请日：2010-08-22
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

7. 发明申请

US20100279011A1 NOVEL BISMUTH PRECURSORS FOR CVD/ALD OF THIN FILMS 审中-公开
标题翻译：用于薄膜CVD / ALD的新型双面前驱物
公开(公告)号：US20100279011A1
公开(公告)日：2010-11-04
申请号：US12740992
申请日：2008-10-31
申请人： Tianniu Chen , Chongying Xu , Bryan C. Hendrix , William Hunks , Thomas M. Cameron , Matthias Stender , Gregory T. Stauf , Jeffrey F. Roeder
发明人： Tianniu Chen , Chongying Xu , Bryan C. Hendrix , William Hunks , Thomas M. Cameron , Matthias Stender , Gregory T. Stauf , Jeffrey F. Roeder
IPC分类号： C23C16/18 , C07F9/94 , C07F7/08 , C09D4/00
CPC分类号： C07F9/94
摘要： Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (
摘要翻译：铋前体可用于通过低温（<300℃）气相沉积方法如CVD和ALD形成高保形含铋的膜，包括氨基铋，胍铋酸盐，异钌酸铋，氨基甲酸铋和硫代氨基甲酸铋，铋β- 二酮酸酯，二酮基铋，二酮亚胺铋，铋烯丙基酯，环戊二烯基铋，烷基铋，醇铋，铋配合物的铋甲硅烷基，铋甲硅烷基酰胺，铋螯合酰胺和铋二碲酰亚氨基二膦酸铋。还描述了制备这种前体的方法，以及适用于制造微电子器件产品的这种前体的包装形式。这些铋前体有利地用于形成含铋的膜，例如GBT，Bi2Te3，Bi4Ti3O12，SrBi2Ta2O9，Bi-Ta-O，BiP和含有铋的含铋膜的膜。

8. 发明申请

US20130029456A1 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 有权
公开(公告)号：US20130029456A1
公开(公告)日：2013-01-31
申请号：US13622233
申请日：2012-09-18
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

9. 发明授权

US07838329B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films 有权
标题翻译：用于金属薄膜的CVD / ALD的锑和锗络合物
公开(公告)号：US07838329B2
公开(公告)日：2010-11-23
申请号：US12307101
申请日：2007-05-12
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

10. 发明申请

US20100112211A1 ZIRCONIUM, HAFNIUM, TITANIUM, AND SILICON PRECURSORS FOR ALD/CVD 审中-公开
标题翻译：用于ALD / CVD的ZIRCONIUM，HAFNIUM，TITANIUM和SILICON PRECURSORS
公开(公告)号：US20100112211A1
公开(公告)日：2010-05-06
申请号：US12595383
申请日：2008-04-13
申请人： Chongying Xu , Jeffrey F. Roeder , Tianniu Chen , Bryan C. Hendrix , Brian Benac , Thomas M. Cameron , David W. Peters , Gregory T. Stauf , Leah Maylott
发明人： Chongying Xu , Jeffrey F. Roeder , Tianniu Chen , Bryan C. Hendrix , Brian Benac , Thomas M. Cameron , David W. Peters , Gregory T. Stauf , Leah Maylott
IPC分类号： C23C16/00 , C07F7/00 , C09D1/00
CPC分类号： C23C16/405 , C07C211/65 , C07F7/003 , C07F17/00 , C23C16/18
摘要： Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium-containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation.
摘要翻译：分别用于相应的含锆，含铪，含钛和含硅膜的原子层沉积（ALD）和化学气相沉积（CVD）的锆，铪，钛和硅前体。所公开的前体实现了以最小碳掺入为特征的高度保形的沉积膜。

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