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    • 4. 发明授权
    • Method for manufacturing an integral thin-film metal resistor
    • 制造整体薄膜金属电阻的方法
    • US06232042B1
    • 2001-05-15
    • US09111189
    • 1998-07-07
    • Gregory J. DunnJovica SavicAllyson Beuhler
    • Gregory J. DunnJovica SavicAllyson Beuhler
    • G03F700
    • H05K1/167G03F7/00H01C17/07H05K3/0023H05K3/025H05K3/048H05K3/386H05K2201/0317H05K2201/09881H05K2203/0152H05K2203/1461
    • A method for manufacturing a microelectronic assembly to have a resistor, and particularly a metal resistive film, with desirable processing and dimensional characteristics. The method generally entails applying a photosensitive dielectric to a substrate to form a dielectric layer. The dielectric layer is photoimaged to polymerize a first portion of the dielectric layer on a first region of the substrate, leaving the remainder of the dielectric layer unpolymerized. An electrically resistive film is then applied to the dielectric layer, and the dielectric layer is developed to remove concurrently the unpolymerized portion thereof and the portion of the resistive film overlying the unpolymerized portion, so that a portion of the resistive film remains over the second portion to form the resistor. An alternative process order is to apply the resistive film prior to exposing the dielectric layer to radiation, and then exposing the dielectric layer through the resistive film. The resistive film is preferably a multilayer film that includes an electrically resistive layer, such as NiP, NiCr or another nickel-containing alloy, and a sacrificial backing such as a layer of copper.
    • 一种用于制造具有所需加工和尺寸特性的电阻器,特别是金属电阻膜的微电子组件的方法。 该方法通常需要将光敏电介质施加到衬底以形成电介质层。 介电层被光刻以在基板的第一区域上聚合电介质层的第一部分,留下介电层的其余部分未聚合。 然后将电阻膜施加到电介质层,并且电介质层被显影以同时除去其未聚合部分和覆盖未聚合部分的电阻膜的部分,使得电阻膜的一部分保留在第二部分上 以形成电阻器。 替代的处理顺序是在将电介质层暴露于辐射之前施加电阻膜,然后将电介质层暴露于电阻膜。 电阻膜优选为包含电阻层的多层膜,例如NiP,NiCr或其它含镍合金,以及牺牲衬底,例如铜层。
    • 7. 发明授权
    • Two-layer patterned resistor
    • 双层图案电阻
    • US07105913B2
    • 2006-09-12
    • US10743589
    • 2003-12-22
    • Gregory J. DunnScott N. CarneyJovica Savic
    • Gregory J. DunnScott N. CarneyJovica Savic
    • H01L27/082
    • H01C7/006H01C1/148H01C17/065H01L23/49822H01L2924/0002H01L2924/00
    • A technique for fabricating a patterned resistor on a substrate produces a patterned resistor (101, 801, 1001, 1324, 1374) including two conductive end terminations (110, 810, 1010) on the substrate, a pattern of first resistive material (120, 815, 1015) having a first width (125) and a first sheet resistance, and a pattern of second resistive material (205, 820, 1020) having a second width (210) and a second sheet resistance that at least partially overlies the pattern of first resistive material. One of the first and second sheet resistances is a low sheet resistance and the other of the first and second resistances is a high sheet resistance. A ratio of the high sheet resistance to the low sheet resistance is at least ten to one. The pattern having the higher sheet resistance is substantially wider than the pattern having the low sheet resistance. The patterned resistor can be precision trimmed 1225.
    • 用于在衬底上制造图案化电阻器的技术产生包括在衬底上的两个导电端接(110,810,1010)的图案化电阻器(101,801,1001,1324,1374),第一电阻材料(120, 具有第一宽度(125)和第一薄层电阻的第二电阻材料(205,820,1020)的图案,以及具有至少部分地覆盖图案的第二宽度(210)和第二薄层电阻的图案 的第一电阻材料。 第一和第二薄层电阻之一是低的薄层电阻,第一和第二电阻中的另一个是高的薄层电阻。 高薄层电阻与低薄层电阻的比例至少为10比1。 具有较高薄层电阻的图案基本上比具有低薄层电阻的图案更宽。 图案化电阻器可精密修整1225。