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1. 发明授权

US07434196B2 Renesting interaction map into design for efficient long range calculations 有权
标题翻译：将交互图重新设计成有效的长距离计算
公开(公告)号：US07434196B2
公开(公告)日：2008-10-07
申请号：US11242723
申请日：2005-10-03
申请人： Gregg M Gallatin , Emanuel Gofman , Kafai Lai , Mark A Lavin , Maharaj Mukherjee , Dov Ramm , Alan E Rosenbluth , Shlomo Shlafman
发明人： Gregg M Gallatin , Emanuel Gofman , Kafai Lai , Mark A Lavin , Maharaj Mukherjee , Dov Ramm , Alan E Rosenbluth , Shlomo Shlafman
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/68 , G06F17/5068
摘要： Methods, and program storage devices, for performing model-based optical lithography corrections by partitioning a cell array layout, having a plurality of polygons thereon, into a plurality of cells covering the layout. This layout is representative of a desired design data hierarchy. A density map is then generated corresponding to interactions between the polygons and plurality of cells, and then the densities within each cell are convolved. An interaction map is formed using the convolved densities, followed by truncating the interaction map to form a map of truncated cells. Substantially identical groupings of the truncated cells are then segregated respectively into differing ones of a plurality of buckets, whereby each of these buckets comprise a single set of identical groupings of truncated cells. A hierarchical arrangement is generated using these buckets, and the desired design data hierarchy enforced using the hierarchical arrangement to ultimately correct for optical lithography.
摘要翻译：方法和程序存储装置，用于通过将具有多个多边形的单元阵列布局划分成覆盖布局的多个单元来执行基于模型的光学光刻校正。该布局代表了所需的设计数据层次结构。然后根据多边形与多个单元之间的相互作用产生密度图，然后卷积每个单元内的密度。使用卷积密度形成交互图，然后截断交互图以形成截断单元格的图。截短的细胞的基本相同的分组然后分别分离成多个桶中的不同的桶，由此这些桶中的每一个都包含一组相同的截断细胞组。使用这些桶生成分层布置，并且使用分层布置强制执行所需的设计数据层级以最终校正光刻。

2. 发明授权

US08880382B2 Analyzing a patterning process using a model of yield 有权
公开(公告)号：US08880382B2
公开(公告)日：2014-11-04
申请号：US13352713
申请日：2012-01-18
申请人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
发明人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
IPC分类号： G06G7/48
CPC分类号： G06F17/5009 , G03F1/36 , G03F1/70 , G06F2217/10
摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.

3. 发明授权

US08682634B2 Analyzing a patterning process using a model of yield 失效
标题翻译：使用产量模型分析图案化过程
公开(公告)号：US08682634B2
公开(公告)日：2014-03-25
申请号：US13613061
申请日：2012-09-13
申请人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
发明人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
IPC分类号： G06F17/50 , G06G7/62
CPC分类号： G06F17/5009 , G03F1/36 , G03F1/70 , G06F2217/10
摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.
摘要翻译：提出了包括访问电路产量正向模拟的结果的技术，结果至少包括电路产量结果，包括模拟设备形状。使用电路产量结果，确定至少模拟装置形状的高级特征。基于确定的高水平特征和使用电路产量结果，构建了一种预测产量的紧凑模型，该紧凑模型包括多个可调参数，并构建了用于预测产量的紧凑模型，包括调整可调参数直到满足至少一个第一预定标准。构建最优化问题，其至少包括用于产量，目标和多个约束的紧凑模型。使用优化问题，根据多个约束修改目标，直到满足至少一个第二预定标准。

4. 发明授权

US08266556B2 Fracturing continuous photolithography masks 有权
标题翻译：压裂连续光刻掩模
公开(公告)号：US08266556B2
公开(公告)日：2012-09-11
申请号：US12849171
申请日：2010-08-03
申请人： Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
发明人： Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.
摘要翻译：在说明性实施例中提供了用于压裂可用于光刻的连续掩模的方法，系统和计算机可用程序产品。从连续掩码边缘上的一组点中选择第一个原点。在边缘上识别第一终点，使得第一原点和第一终点之间的间隔度量至少等于阈值。使用第一原点和第一终点确定用于断裂的几种替代方案。计算与几种替代方案中的每一种相关联的成本，并且选择替代方案之一作为优选的压裂。从该组点形成几对原点和终点。每对都有一对优选的压裂成本。连续掩模使用几对的子集进行断裂。

5. 发明授权

US08448098B2 Fracturing continuous photolithography masks 有权
标题翻译：压裂连续光刻掩模
公开(公告)号：US08448098B2
公开(公告)日：2013-05-21
申请号：US13453262
申请日：2012-04-23
申请人： Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
发明人： Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.
摘要翻译：在说明性实施例中提供了用于压裂可用于光刻的连续掩模的方法，系统和计算机可用程序产品。从连续掩码边缘上的一组点中选择第一个原点。在边缘上识别第一终点，使得第一原点和第一终点之间的间隔度量至少等于阈值。使用第一原点和第一终点确定用于压裂的几种替代方案。计算与几种替代方案中的每一种相关联的成本，并且选择替代方案之一作为优选的压裂。从该组点形成几对原点和终点。每对都有一对优选的压裂成本。连续掩模使用几对的子集进行断裂。

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