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1. 发明授权

US07777178B2 Plasma generating apparatus and method using neutral beam 有权
标题翻译：等离子体发生装置和使用中性束的方法
公开(公告)号：US07777178B2
公开(公告)日：2010-08-17
申请号：US11277261
申请日：2006-03-23
申请人： Geun-Young Yeom , Sang-Duk Park , Chang-Kwon Oh
发明人： Geun-Young Yeom , Sang-Duk Park , Chang-Kwon Oh
IPC分类号： H05H3/02
CPC分类号： H05H1/46 , H05H2001/4667
摘要： A plasma generating apparatus and method using a neutral beam, capable of readily generating plasma at the same gas flow rate by changing the structure of an ion gun, without a separate ignition device, are provided. The apparatus includes a plasma generating part formed of a quartz cup, a radio frequency (RF) applying antenna disposed at the periphery of the plasma generating part, a cooling water supply part disposed at the periphery of the plasma generating part, and an igniter in direct communication with the plasma generating part, wherein a gas for generating plasma is supplied into the igniter, and the igniter has a higher local pressure than the plasma generating part at the same gas flow rate. The ion gun is also cheaper to manufacture since it does not require a separate power supply.
摘要翻译：提供了一种使用中性束的等离子体发生装置和方法，其能够通过改变离子枪的结构而容易地以相同的气体流量产生等离子体，而不需要单独的点火装置。该装置包括由石英杯形成的等离子体产生部件，设置在等离子体产生部件周边的射频（RF）施加天线，设置在等离子体产生部件周边的冷却水供应部分，以及点火器与等离子体产生部件的直接连通，其中用于产生等离子体的气体被供应到点火器中，并且点火器具有比等离子体产生部件具有相同气体流量的更高的局部压力。离子枪制造成本也便宜，因为它不需要单独的电源。

2. 发明申请

US20110192820A1 ATOMIC LAYER ETCHING APPARATUS AND ETCHING METHOD USING THE SAME 审中-公开
标题翻译：原子层蚀刻装置及其蚀刻方法
公开(公告)号：US20110192820A1
公开(公告)日：2011-08-11
申请号：US12712944
申请日：2010-02-25
申请人： Geun-Young Yeom , Woong-Sun Lim , Sang-Duk Park , Yi-Yeon Kim , Byoung-Jae Park , Je-Kwan Yeon
发明人： Geun-Young Yeom , Woong-Sun Lim , Sang-Duk Park , Yi-Yeon Kim , Byoung-Jae Park , Je-Kwan Yeon
IPC分类号： B44C1/22 , H01L21/3065
CPC分类号： H01L21/32137 , H01J37/32009 , H01J37/32357 , H01J37/32422 , H01L21/3065
摘要： An atomic layer etching apparatus using reactive radicals and neutral beams and an etching method using the same are provided. The atomic layer etching apparatus includes a reaction chamber including a stage on which a substrate to be etched is seated, a plasma generator including a plasma chamber configured to supply reactive radicals and neutral beams into the reaction chamber and receive a source gas to generate plasma, an inductive coil configured to surround the exterior of the plasma chamber to generate an electric field, a grid assembly disposed at a lower part of the plasma chamber and including first, second and third grids for extracting ion beams, and a reflective body disposed under the grid assembly and configured to supply electrons to the ion beams to convert the ion beams into neutral beams, a shutter installed between the plasma generator and the reactive chamber and configured to adjust supply of the neutral beams into the reaction chamber, a purge gas supply part configured to supply a purge gas into the reaction chamber, and a controller configured to control supply of the source gas, an etching gas and the purge gas, and opening/closing of the shutter.
摘要翻译：提供了使用反应性基团和中性光束的原子层蚀刻装置和使用其的蚀刻方法。原子层蚀刻装置包括：反应室，包括待刻蚀的基板的载置台;等离子体发生器，其包括等离子体室，该等离子体室被配置为将反应性基团和中性光束提供到反应室中并接收源气体以产生等离子体; 构造成围绕等离子体室的外部以产生电场的感应线圈，设置在等离子体室的下部并包括用于提取离子束的第一，第二和第三栅格的栅格组件，以及设置在等离子体下方的反射体网格组件并且被配置为向离子束供应电子以将离子束转换成中性光束;安装在等离子体发生器和反应室之间并被配置为调节向反应室供应中性光束的快门，吹扫气体供应部分被配置为将净化气体供应到所述反应室中;以及控制器，被配置为控制所述源气体的供应，清洁气体和净化气体，以及快门的打开/关闭。

3. 发明授权

US08974630B2 Inductively coupled plasma processing apparatus having internal linear antenna for large area processing 有权
标题翻译：具有用于大面积处理的内部线性天线的感应耦合等离子体处理装置
公开(公告)号：US08974630B2
公开(公告)日：2015-03-10
申请号：US12332927
申请日：2008-12-11
申请人： Geun-Young Yeom , Young-Joon Lee , Kyong-Nam Kim
发明人： Geun-Young Yeom , Young-Joon Lee , Kyong-Nam Kim
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/321
摘要： An inductively coupled plasma processing apparatus for a large area processing includes a reaction chamber and a bending type antenna structure. The bending type antenna structure includes bending type linear antennas. Each of the bending type linear antennas has a first end, a second end and a bended portion. The bending type linear antennas are arranged horizontally in parallel with the substrate to pass through the reaction chamber inside the reaction chamber. The bending type linear antennas are spaced apart from each other. A bended portion of a bending type linear antenna is protruded out of the reaction chamber, a first end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to an RF power, and a second end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to a ground.
摘要翻译：用于大面积处理的电感耦合等离子体处理装置包括反应室和弯曲型天线结构。弯曲型天线结构包括弯曲型线性天线。每个弯曲型线性天线具有第一端，第二端和弯曲部。弯曲型线状天线与基板水平配置，通过反应室内的反应室。弯曲型线性天线彼此间隔开。弯曲型线性天线的弯曲部分突出到反应室外，每个弯曲型线性天线的第一端从反应室突出并耦合到RF功率，并且每个的第二端弯曲型线性天线从反应室突出并耦合到地面。

4. 发明申请

US20050194361A1 Neutral beam source having electromagnet used for etching semiconductor device 失效
标题翻译：具有用于蚀刻半导体器件的电磁体的中性束源
公开(公告)号：US20050194361A1
公开(公告)日：2005-09-08
申请号：US10825099
申请日：2004-04-16
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park
IPC分类号： H01L21/3065 , B23K9/00
CPC分类号： H01L21/3065 , H01J37/321 , H01J37/32422 , H01J37/3266 , H01L21/31116 , H05H3/02
摘要： Disclosed is a neutral beam source used for etching a semiconductor device. The neutral beam source includes a plasma chamber having quartz provided at an outer wall thereof with an RF coil, a grid assembly, a reflective member, and an electromagnet arranged around the plasma chamber while surrounding the plasma chamber. Plasma density becomes high due to the magnetic field applied to the plasma chamber so that an amount of ion flux is increased.
摘要翻译：公开了一种用于蚀刻半导体器件的中性束源。中性束源包括具有在其外壁处设置有RF线圈的石英等离子体室，栅格组件，反射构件和围绕等离子体室围绕等离子体室的电磁体。由于施加到等离子体室的磁场，等离子体密度变高，使得离子通量增加。

5. 发明授权

US08293069B2 Inductively coupled plasma apparatus 有权
标题翻译：电感耦合等离子体装置
公开(公告)号：US08293069B2
公开(公告)日：2012-10-23
申请号：US12331981
申请日：2008-12-10
申请人： Geun-Young Yeom , Kyong-Nam Kim , Seung-Jae Jung
发明人： Geun-Young Yeom , Kyong-Nam Kim , Seung-Jae Jung
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/321
摘要： A inductively coupled plasma apparatus includes reaction chamber in which a substrate is loaded, and a double comb type antenna structure including first linear antennas and second linear antennas respectively arranged horizontally to pass through the reaction chamber inside the reaction chamber. The first and second linear antenna are alternately aligned each other. First ends the first linear antennas are protruded out of the reaction chamber and coupled to each other so as to be coupled to a first induced RF power, and first ends of the second linear antennas are protruded out of the reaction chamber in opposition to the first ends of the first linear antennas and coupled to each other so as to be coupled to a second induced RF power. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.
摘要翻译：电感耦合等离子体装置包括其中装载有基板的反应室，以及包括分别水平布置以通过反应室内的反应室的第一线性天线和第二线性天线的双梳型天线结构。第一和第二线性天线彼此交替地对准。首先，第一线性天线从反应室突出并彼此耦合，以便耦合到第一感应RF功率，并且第二线性天线的第一端与第一线性天线相反地突出出反应室第一线性天线的端部并且彼此耦合，以便耦合到第二感应RF功率。等离子体均匀性得到改善，并且通过根据基板的尺寸调节天线之间的距离来维持优异的等离子体均匀性。

6. 发明申请

US20090173445A1 INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS HAVING INTERNAL LINEAR ANTENNA FOR LARGE ARE PROCESSING 有权
标题翻译：具有内部线性天线的电感耦合等离子体处理装置
公开(公告)号：US20090173445A1
公开(公告)日：2009-07-09
申请号：US12332927
申请日：2008-12-11
申请人： Geun-Young Yeom , Young-Joon Lee , Kyong-Nam Kim
发明人： Geun-Young Yeom , Young-Joon Lee , Kyong-Nam Kim
IPC分类号： C23F1/00
CPC分类号： H01J37/321
摘要： An inductively coupled plasma processing apparatus for a large area processing includes a reaction chamber and a bending type antenna structure. The bending type antenna structure includes bending type linear antennas. Each of the bending type linear antennas has a first end, a second end and a bended portion. The bending type linear antennas are arranged horizontally in parallel with the substrate to pass through the reaction chamber inside the reaction chamber. The bending type linear antennas are spaced apart from each other. A bended portion of a bending type linear antenna is protruded out of the reaction chamber, a first end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to an RF power, and a second end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to a ground.
摘要翻译：用于大面积处理的电感耦合等离子体处理装置包括反应室和弯曲型天线结构。弯曲型天线结构包括弯曲型线性天线。每个弯曲型线性天线具有第一端，第二端和弯曲部。弯曲型线状天线与基板水平配置，通过反应室内的反应室。弯曲型线性天线彼此间隔开。弯曲型线性天线的弯曲部分突出到反应室外，每个弯曲型线性天线的第一端从反应室突出并耦合到RF功率，并且每个的第二端弯曲型线性天线从反应室突出并耦合到地面。

7. 发明申请

US20070101938A1 Inductively coupled plasma processing apparatus having internal linear antenna for large area processing 审中-公开
标题翻译：具有用于大面积处理的内部线性天线的感应耦合等离子体处理装置
公开(公告)号：US20070101938A1
公开(公告)日：2007-05-10
申请号：US11643664
申请日：2006-12-22
申请人： Geun-Young Yeom , Young-Joon Lee , Kyoung-Nam Kim
发明人： Geun-Young Yeom , Young-Joon Lee , Kyoung-Nam Kim
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/321
摘要： An inductively coupled plasma processing apparatus for a large area processing, the inductively coupled plasma processing apparatus comprising: a reaction chamber; a plurality of linear antennas horizontally arranged at an inner upper portion of the reaction chamber while being spaced from each other by a predetermined distance for receiving induced RF power, the linear antennas being coupled to each other at an outer portion of the reaction chamber, the linear antennas including at least one bending antenna formed by connecting first ends of adjacent antennas, which are exposed to the outer portion of the reaction chamber, to each other; and at least one magnet positioned adjacent to the linear antennas for creating a magnetic field perpendicularly crossing an electric field created by the linear antennas in such a manner that electrons perform a spiral movement.
摘要翻译：一种用于大面积处理的电感耦合等离子体处理装置，所述电感耦合等离子体处理装置包括：反应室; 水平地布置在反应室的内部上部的多个线性天线，同时彼此隔开预定距离以接收感应RF功率，线性天线在反应室的外部彼此耦合，线性天线，其包括通过将暴露于反应室的外部的相邻天线的第一端连接而形成的至少一个弯曲天线; 以及邻近线性天线定位的至少一个磁体，用于产生垂直于由线性天线产生的电场的磁场，使得电子执行螺旋运动。

8. 发明申请

US20060213443A1 Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same 有权
标题翻译：使用中性光束的原子层沉积设备和使用其沉积原子层的方法
公开(公告)号：US20060213443A1
公开(公告)日：2006-09-28
申请号：US11348471
申请日：2006-02-07
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
IPC分类号： C23C16/00 , B29C71/04
CPC分类号： C23C16/45536 , C23C16/452 , C23C16/4551 , C23C16/45544
摘要： Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.
摘要翻译：公开了使用中性光束的原子层沉积设备和使用该设备沉积原子层的方法，其能够将离子束转换成中性光束并将其辐射到待处理的衬底上。该方法使用一种装置，用于将含有不能被化学吸附的材料的第一反应气体提供到待处理的基材上，并将其加载到其中装载基材的反应室中，以及形成含有不能被化学吸附的材料的第一反应物吸附层基材; 并且将由所述第二反应气体产生的中性束辐射到形成有所述第一反应物吸附层的基板上，并从所述第一反应物吸附层除去未化学吸附到所述基板上的材料，以形成第二反应物吸附层。可以通过使用中性光束对用于沉积原子层的装置进行充电而进行无损伤的处理以及使用该装置沉积原子层的方法。

9. 发明申请

US20110162581A1 ATOMIC LAYER DEPOSITION APPARATUS USING NEUTRAL BEAM AND METHOD OF DEPOSITING ATOMIC LAYER USING THE SAME 审中-公开
标题翻译：使用中性光束的原子层沉积装置和使用其沉积原子层的方法
公开(公告)号：US20110162581A1
公开(公告)日：2011-07-07
申请号：US13050507
申请日：2011-03-17
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
IPC分类号： C23C16/48 , C23C16/455
CPC分类号： C23C16/45536 , C23C16/452 , C23C16/4551 , C23C16/45544
摘要： Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.
摘要翻译：公开了使用中性光束的原子层沉积设备和使用该设备沉积原子层的方法，其能够将离子束转换成中性光束并将其辐射到待处理的衬底上。该方法使用一种装置，用于将含有不能被化学吸附的材料的第一反应气体提供到待处理的基材上，并将其加载到其中装载基材的反应室中，以及形成含有不能被化学吸附的材料的第一反应物吸附层基材; 并且将由所述第二反应气体产生的中性束辐射到形成有所述第一反应物吸附层的基板上，并从所述第一反应物吸附层除去未化学吸附到所述基板上的材料，以形成第二反应物吸附层。可以通过使用中性光束对用于沉积原子层的装置进行充电而进行无损伤的处理以及使用该装置沉积原子层的方法。

10. 发明授权

US07919142B2 Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same 有权
标题翻译：使用中性光束的原子层沉积设备和使用其沉积原子层的方法
公开(公告)号：US07919142B2
公开(公告)日：2011-04-05
申请号：US11348471
申请日：2006-02-07
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
IPC分类号： C23C16/00 , C23C14/28 , C23C14/30 , H05B6/00 , H05B7/00
CPC分类号： C23C16/45536 , C23C16/452 , C23C16/4551 , C23C16/45544
摘要： Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.
摘要翻译：公开了使用中性光束的原子层沉积设备和使用该设备沉积原子层的方法，其能够将离子束转换成中性光束并将其辐射到待处理的衬底上。该方法使用一种装置，用于将含有不能被化学吸附的材料的第一反应气体提供到待处理的基材上，并将其加载到其中装载基材的反应室中，以及形成含有不能被化学吸附的材料的第一反应物吸附层基材; 并且将由所述第二反应气体产生的中性束辐射到形成有所述第一反应物吸附层的基板上，并从所述第一反应物吸附层除去未化学吸附到所述基板上的材料，以形成第二反应物吸附层。可以通过使用中性光束对用于沉积原子层的装置进行充电而进行无损伤的处理以及使用该装置沉积原子层的方法。

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