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1. 发明申请

US20140370699A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20140370699A1
公开(公告)日：2014-12-18
申请号：US14145188
申请日：2013-12-31
申请人： Ju-Youn Kim , Chul-Woong Lee , Tae-Sun Kim , Sang-Duk Park , Bum-Joon Youn , Tae-Won Ha
发明人： Ju-Youn Kim , Chul-Woong Lee , Tae-Sun Kim , Sang-Duk Park , Bum-Joon Youn , Tae-Won Ha
IPC分类号： H01L21/308 , H01L21/28
CPC分类号： H01L21/28008 , H01L21/31138 , H01L21/32139 , H01L21/823431 , H01L21/82345 , H01L29/4966 , H01L29/517 , H01L29/66545
摘要： A method of fabricating a semiconductor device includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench and a second trench, forming a first conductive layer along sidewall surfaces and bottom surface of the first trench and forming a second conductive layer along sidewall surfaces and bottom surface of the second trench, forming a mask pattern on the second conductive layer, the mask pattern filling the second trench and being a bottom anti-reflective coating (BARC), and removing the first conductive layer using the mask pattern.
摘要翻译：制造半导体器件的方法包括在衬底上形成层间绝缘层，所述层间绝缘层包括第一沟槽和第二沟槽，沿着所述第一沟槽的侧壁表面和底表面形成第一导电层，并形成第二导电层，沿着第二沟槽的侧壁表面和底表面，在第二导电层上形成掩模图案，掩模图案填充第二沟槽并且是底部抗反射涂层（BARC），并且使用掩模去除第一导电层模式。

2. 发明授权

US07777178B2 Plasma generating apparatus and method using neutral beam 有权
标题翻译：等离子体发生装置和使用中性束的方法
公开(公告)号：US07777178B2
公开(公告)日：2010-08-17
申请号：US11277261
申请日：2006-03-23
申请人： Geun-Young Yeom , Sang-Duk Park , Chang-Kwon Oh
发明人： Geun-Young Yeom , Sang-Duk Park , Chang-Kwon Oh
IPC分类号： H05H3/02
CPC分类号： H05H1/46 , H05H2001/4667
摘要： A plasma generating apparatus and method using a neutral beam, capable of readily generating plasma at the same gas flow rate by changing the structure of an ion gun, without a separate ignition device, are provided. The apparatus includes a plasma generating part formed of a quartz cup, a radio frequency (RF) applying antenna disposed at the periphery of the plasma generating part, a cooling water supply part disposed at the periphery of the plasma generating part, and an igniter in direct communication with the plasma generating part, wherein a gas for generating plasma is supplied into the igniter, and the igniter has a higher local pressure than the plasma generating part at the same gas flow rate. The ion gun is also cheaper to manufacture since it does not require a separate power supply.
摘要翻译：提供了一种使用中性束的等离子体发生装置和方法，其能够通过改变离子枪的结构而容易地以相同的气体流量产生等离子体，而不需要单独的点火装置。该装置包括由石英杯形成的等离子体产生部件，设置在等离子体产生部件周边的射频（RF）施加天线，设置在等离子体产生部件周边的冷却水供应部分，以及点火器与等离子体产生部件的直接连通，其中用于产生等离子体的气体被供应到点火器中，并且点火器具有比等离子体产生部件具有相同气体流量的更高的局部压力。离子枪制造成本也便宜，因为它不需要单独的电源。

3. 发明申请

US20070221833A1 PLASMA GENERATING APPARATUS AND METHOD USING NEUTRAL BEAM 有权
标题翻译：等离子体发生装置和使用中性光束的方法
公开(公告)号：US20070221833A1
公开(公告)日：2007-09-27
申请号：US11277261
申请日：2006-03-23
申请人： Geun-Young YEOM , Sang-Duk PARK , Chang-Kwon OH
发明人： Geun-Young YEOM , Sang-Duk PARK , Chang-Kwon OH
IPC分类号： H05H1/00
CPC分类号： H05H1/46 , H05H2001/4667
摘要： A plasma generating apparatus and method using a neutral beam, capable of readily generating plasma at the same gas flow rate by changing the structure of an ion gun, without a separate ignition device, are provided. The apparatus includes a plasma generating part formed of a quartz cup, a radio frequency (RF) applying antenna disposed at the periphery of the plasma generating part, a cooling water supply part disposed at the periphery of the plasma generating part, and an igniter in direct communication with the plasma generating part, wherein a gas for generating plasma is supplied into the igniter, and the igniter has a higher local pressure than the plasma generating part at the same gas flow rate. The ion gun is also cheaper to manufacture since it does not require a separate power supply.
摘要翻译：提供了一种使用中性束的等离子体产生装置和方法，其能够通过改变离子枪的结构而容易地以相同的气体流量产生等离子体，而不需要单独的点火装置。该装置包括由石英杯形成的等离子体产生部件，设置在等离子体产生部件周边的射频（RF）施加天线，设置在等离子体产生部件周边的冷却水供应部分，以及点火器与等离子体产生部件的直接连通，其中用于产生等离子体的气体被供应到点火器中，并且点火器具有比等离子体产生部件具有相同气体流量的更高的局部压力。离子枪制造成本也便宜，因为它不需要单独的电源。

4. 发明申请

US20140370672A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20140370672A1
公开(公告)日：2014-12-18
申请号：US14169608
申请日：2014-01-31
申请人： Ju-Youn Kim , Sang-Duk Park , Jae-Kyung Seo , Kwang-Sub Yoon , In-Gu Yoon
发明人： Ju-Youn Kim , Sang-Duk Park , Jae-Kyung Seo , Kwang-Sub Yoon , In-Gu Yoon
IPC分类号： H01L21/8238
CPC分类号： H01L27/1104 , H01L21/26513 , H01L21/266 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/823828 , H01L29/66545
摘要： In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.
摘要翻译：在制造半导体器件的方法中，第一栅电极和第二栅电极分别设置在衬底上，第一栅极电极和第二栅电极分别形成在衬底的第一区域和第二区域中。导电缓冲层沿着第一栅电极和第二栅电极的侧壁以及第一栅电极和第二栅电极的上表面形成。形成覆盖缓冲层上的基板的第一区域的第一掩模图案。使用第一掩模图案作为离子注入工艺的掩模，在第二栅电极的侧面的衬底中形成第一杂质区。

5. 发明申请

US20160190142A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20160190142A1
公开(公告)日：2016-06-30
申请号：US15061038
申请日：2016-03-04
申请人： Ju-Youn Kim , Sang-Duk Park , Jae-Kyung Seo , Kwang-Sub Yoon , In-Gu Yoon
发明人： Ju-Youn Kim , Sang-Duk Park , Jae-Kyung Seo , Kwang-Sub Yoon , In-Gu Yoon
IPC分类号： H01L27/11 , H01L21/266 , H01L21/265 , H01L21/8238 , H01L29/66
CPC分类号： H01L27/1104 , H01L21/26513 , H01L21/266 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/823828 , H01L29/66545
摘要： In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.
摘要翻译：在制造半导体器件的方法中，第一栅电极和第二栅电极分别设置在衬底上，第一栅极电极和第二栅电极分别形成在衬底的第一区域和第二区域中。导电缓冲层沿着第一栅电极和第二栅电极的侧壁以及第一栅电极和第二栅电极的上表面形成。形成覆盖缓冲层上的基板的第一区域的第一掩模图案。使用第一掩模图案作为离子注入工艺的掩模，在第二栅电极的侧面的衬底中形成第一杂质区。

6. 发明申请

US20110192820A1 ATOMIC LAYER ETCHING APPARATUS AND ETCHING METHOD USING THE SAME 审中-公开
标题翻译：原子层蚀刻装置及其蚀刻方法
公开(公告)号：US20110192820A1
公开(公告)日：2011-08-11
申请号：US12712944
申请日：2010-02-25
申请人： Geun-Young Yeom , Woong-Sun Lim , Sang-Duk Park , Yi-Yeon Kim , Byoung-Jae Park , Je-Kwan Yeon
发明人： Geun-Young Yeom , Woong-Sun Lim , Sang-Duk Park , Yi-Yeon Kim , Byoung-Jae Park , Je-Kwan Yeon
IPC分类号： B44C1/22 , H01L21/3065
CPC分类号： H01L21/32137 , H01J37/32009 , H01J37/32357 , H01J37/32422 , H01L21/3065
摘要： An atomic layer etching apparatus using reactive radicals and neutral beams and an etching method using the same are provided. The atomic layer etching apparatus includes a reaction chamber including a stage on which a substrate to be etched is seated, a plasma generator including a plasma chamber configured to supply reactive radicals and neutral beams into the reaction chamber and receive a source gas to generate plasma, an inductive coil configured to surround the exterior of the plasma chamber to generate an electric field, a grid assembly disposed at a lower part of the plasma chamber and including first, second and third grids for extracting ion beams, and a reflective body disposed under the grid assembly and configured to supply electrons to the ion beams to convert the ion beams into neutral beams, a shutter installed between the plasma generator and the reactive chamber and configured to adjust supply of the neutral beams into the reaction chamber, a purge gas supply part configured to supply a purge gas into the reaction chamber, and a controller configured to control supply of the source gas, an etching gas and the purge gas, and opening/closing of the shutter.
摘要翻译：提供了使用反应性基团和中性光束的原子层蚀刻装置和使用其的蚀刻方法。原子层蚀刻装置包括：反应室，包括待刻蚀的基板的载置台;等离子体发生器，其包括等离子体室，该等离子体室被配置为将反应性基团和中性光束提供到反应室中并接收源气体以产生等离子体; 构造成围绕等离子体室的外部以产生电场的感应线圈，设置在等离子体室的下部并包括用于提取离子束的第一，第二和第三栅格的栅格组件，以及设置在等离子体下方的反射体网格组件并且被配置为向离子束供应电子以将离子束转换成中性光束;安装在等离子体发生器和反应室之间并被配置为调节向反应室供应中性光束的快门，吹扫气体供应部分被配置为将净化气体供应到所述反应室中;以及控制器，被配置为控制所述源气体的供应，清洁气体和净化气体，以及快门的打开/关闭。

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