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1. 发明授权

US06308654B1 Inductively coupled parallel-plate plasma reactor with a conical dome 失效
标题翻译：具有锥形圆顶的电感耦合平行板等离子体反应器
公开(公告)号：US06308654B1
公开(公告)日：2001-10-30
申请号：US08734015
申请日：1996-10-18
申请人： Gerhard Schneider , Viktor Shel , Andrew Nguyen , Robert W. Wu , Gerald Z. Yin
发明人： Gerhard Schneider , Viktor Shel , Andrew Nguyen , Robert W. Wu , Gerald Z. Yin
IPC分类号： C23C1600
CPC分类号： H01J37/321
摘要： A plasma reactor appropriate for fabrication, especially etching, of semiconductor integrated circuits and similar processes in which the chamber has a top comprising a truncated conical dome and, preferably, a counter electrode disposed at the top of the conical dome. An RF coil is wrapped around the conical dome to inductively couple RF energy into a plasma within the chamber dome. The dome temperature can be controlled in a number of ways. A heat sink can be attached to the outside rim of the dome. A rigid conical thermal control sheath can be fit to the outside of the dome, and any differential thermal expansion between the two is accommodated by the conical geometry, thus assuring good thermal contact. The rigid thermal control sheath can include resistive heating, fluid cooling, or both. Alternatively, a flexible resistive heater can be wrapped around the dome inside the RF coil. The resistive heater includes a heater wire wound in a serpentine path that has straight portions overlying and perpendicular to the RF coil but has bends located away from the RF coil. The path prevents the heater wire from shorting the azimuthal electric field induced by the RF coil and also acts as a Faraday shield preventing capacitive coupling from the coil into the chamber plasma.
摘要翻译：适用于半导体集成电路的制造，特别是蚀刻的等离子体反应器和类似的工艺，其中腔室具有顶部，该顶部包括截顶圆锥形圆顶，优选地，设置在锥形圆顶顶部的对置电极。 RF线圈围绕圆锥形圆顶包裹以将射频能量感应耦合到腔室内的等离子体中。圆顶温度可以以多种方式进行控制。散热器可以连接到圆顶的外边缘。刚性圆锥形热控制护套可以配合到圆顶的外部，并且两者之间的任何差别的热膨胀由锥形几何形状适应，从而确保良好的热接触。刚性热控鞘可以包括电阻加热，流体冷却或两者。或者，柔性电阻加热器可以缠绕在RF线圈内的圆顶周围。电阻加热器包括缠绕在蛇形路径中的加热线，其具有覆盖并垂直于RF线圈的直线部分，但具有远离RF线圈的弯曲。该路径防止加热线短路由RF线圈引起的方位电场，并且还用作防止从线圈到室等离子体的电容耦合的法拉第屏蔽。

2. 发明授权

US06183655B2 Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon 失效
标题翻译：使用氟丙烯和氢氟烃选择性地蚀刻氧化物的可调谐方法
公开(公告)号：US06183655B2
公开(公告)日：2001-02-06
申请号：US09049862
申请日：1998-03-27
申请人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
发明人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
IPC分类号： C03C2568
CPC分类号： H01L21/31116
摘要： A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and producing no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropylene (C3F6) is the principal etching gas and another hydrofluorocarbon such as CH2F2 or C3H2F6 is added at least in part for its polymer-forming ability, which increases selectivity of etching oxide to nitride. The process gas also includes a substantial amount of an inactive gas such as argon. The process gas mixture can be balanced between the active etching gas and the polymer former in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
摘要翻译：等离子体蚀刻工艺，特别适用于需要对氮化物或其他非氧化物材料的高选择性并且不产生蚀刻停止的自对准接触蚀刻或其它高级结构。该方法优选在高密度等离子体反应器中进行，用于蚀刻具有高或低纵横比的孔。在该方法中，六氟丙烯（C 3 F 6）是主要的蚀刻气体，并且至少部分地由于其聚合物形成能力而添加另一种氢氟烃，例如CH 2 F 2或C 3 H 2 F 6，这增加了蚀刻氧化物对氮化物的选择性。工艺气体还包括大量惰性气体如氩气。工艺气体混合物可以在有效蚀刻气体和聚合物成型剂之间以比例平衡，以优于其它材料的选择性，而不会在狭窄的接触孔和宽的工艺窗口中发生蚀刻停止。

3. 发明授权

US6074959A Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide 失效
标题翻译：表现出广泛的工艺窗口并使用六氟丙烷或其他氢氟丙烷来选择性地蚀刻氧化物的方法
公开(公告)号：US6074959A
公开(公告)日：2000-06-13
申请号：US964504
申请日：1997-11-05
申请人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
发明人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/31116
摘要： A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropane (C.sub.3 H.sub.2 F.sub.6) is the principal etching gas in the presence of a substantial amount of an inactive gas such as argon. The process can also be used with the closely related gases heptafluoropropane (C.sub.3 HF.sub.7) and pentafluoropropane (C.sub.3 H.sub.3 F.sub.5). The process may use one or more of the these gases in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window. Difluoromethane (CH.sub.2 F.sub.2) or other fluorocarbons may be combined with the above gases for optimum selectivity for a design of a specific contact feature.
摘要翻译：等离子体蚀刻工艺，特别适用于需要对氮化物或其他非氧化物材料进行高选择性且无蚀刻停止的自对准接触蚀刻或其他高级结构。该方法优选在高密度等离子体反应器中进行，用于蚀刻具有高或低纵横比的孔。在该方法中，六氟丙烷（C 3 H 2 F 6）是在大量惰性气体如氩气存在下的主蚀刻气体。该方法也可与紧密相关的气体七氟丙烷（C 3 H F 7）和五氟丙烷（C 3 H 3 F 5）一起使用。该方法可以使用一种或多种这些气体的比例来优化比其它材料的选择性，而不会在狭窄的接触孔中和在宽的工艺窗口中发生蚀刻停止。二氟甲烷（CH 2 F 2）或其它碳氟化合物可与上述气体组合，以获得特定接触特征设计的最佳选择性。

4. 发明授权

US06361705B1 Plasma process for selectively etching oxide using fluoropropane or fluoropropylene 有权
标题翻译：使用氟丙烷或氟丙烯选择性蚀刻氧化物的等离子体方法
公开(公告)号：US06361705B1
公开(公告)日：2002-03-26
申请号：US09259536
申请日：1999-03-01
申请人： Ruiping Wang , Gerald Z. Yin , Hao A. Lu , Robert W. Wu , Jian Ding
发明人： Ruiping Wang , Gerald Z. Yin , Hao A. Lu , Robert W. Wu , Jian Ding
IPC分类号： H01L21316
CPC分类号： H01L21/31116
摘要： A plasma etch process, particularly applicable to an self-aligned contact etch in a high-density plasma for selectively etching oxide over nitride, although selectivity to silicon is also achieved. In the process, a fluoropropane or a fluoropropylene is a principal etching gas in the presence of a substantial amount of an inactive gas such as argon. Good nitride selectivity has been achieved with hexafluoropropylene (C3F6), octafluoropropane (C3F8), heptafluoropropane (C3HF7), hexafluoropropane (C3H2F6). The process may use one or more of the these gases in proportions to optimize selectivity and a wide process window. Difluoromethane (CH2F2) or other fluorocarbons may be combined with the above gases, particularly with C3F6 for optimum selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
摘要翻译：等离子体蚀刻工艺，特别适用于高密度等离子体中的自对准接触蚀刻，用于选择性地蚀刻氮化物上的氧化物，尽管也可以实现对硅的选择性。在此过程中，氟丙烷或氟丙烯是在大量惰性气体如氩气存在下的主要蚀刻气体。使用六氟丙烯（C 3 F 6），八氟丙烷（C 3 F 8），七氟丙烷（C 3 H F 7），六氟丙烷（C 3 H 2 F 6）已经实现了良好的氮化物选择性。该方法可以使用一种或多种这些气体的比例来优化选择性和宽的工艺窗口。二氟甲烷（CH 2 F 2）或其它碳氟化合物可以与上述气体，特别是与C3F6组合，以优于其他材料的选择性，而不会在狭窄的接触孔和宽的工艺窗口中发生蚀刻停止。

5. 发明授权

US6009830A Independent gas feeds in a plasma reactor 失效
标题翻译：独立气体在等离子体反应器中进料
公开(公告)号：US6009830A
公开(公告)日：2000-01-04
申请号：US975907
申请日：1997-11-21
申请人： Haojiang Li , Robert W. Wu
发明人： Haojiang Li , Robert W. Wu
IPC分类号： H01J37/32 , H01L21/311 , C23C16/00
CPC分类号： H01J37/3244 , H01L21/31116
摘要： A plasma etch reactor having independent gas feeds above the wafer and either at the sides or below the wafer. Preferably, a carrier gas such as argon is supplied from a showerhead electrode above the wafer while an etching gas is supplied from below. In the case of selectively etching an oxide over a non-oxide layer, the etchant gas should include one or more fluorocarbons.
摘要翻译：一种等离子体蚀刻反应器，其具有在晶片上方和晶片侧面或下方独立的气体进料。优选地，当从下方供应蚀刻气体时，从晶片上方的喷头电极提供诸如氩的载气。在非氧化物层上选择性地蚀刻氧化物的情况下，蚀刻剂气体应包括一种或多种碳氟化合物。

6. 发明授权

US06800213B2 Precision dielectric etch using hexafluorobutadiene 失效
标题翻译：使用六氟丁二烯的精密电介质蚀刻
公开(公告)号：US06800213B2
公开(公告)日：2004-10-05
申请号：US10165249
申请日：2002-06-07
申请人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman (Raymond) Hung
发明人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman (Raymond) Hung
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.
摘要翻译：具有F / C比小于2，优选C4F6，含氧气体如O 2或CO，重质碳氟化合物或氢氟碳化合物的稀无机氟碳氟化合物和诸如Ar或Xe的稀有稀释气体的氧化物蚀刻配方。选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例的前两个选择的比例F / C在1.5和2之间。

7. 发明授权

US5910221A Bonded silicon carbide parts in a plasma reactor 失效
标题翻译：在等离子体反应器中粘合的碳化硅部件
公开(公告)号：US5910221A
公开(公告)日：1999-06-08
申请号：US878223
申请日：1997-06-18
申请人： Robert W. Wu
发明人： Robert W. Wu
IPC分类号： H05H1/46 , C04B35/565 , C23C16/44 , C23C16/50 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/32467 , C23C16/4404 , C23C16/50 , H01J37/321 , Y10S156/914
摘要： A plasma reactor, for example, for processing a semiconductor wafer, in which parts of the chamber are formed of multiple pieces of silicon carbide that have been bonded together. The bonding may be performed by diffusion bonding or by using a bonding agent such as polyimide. These silicon carbide parts typically face and define a plasma region. Preferably, the surface facing the plasma is coated with a silicon carbide film, such as that deposited by chemical vapor deposition, which is more resistant to erosion by the plasma. Advantageously, the different parts are formed with different electrical resistivities consistent with forming an advantageous plasma.
摘要翻译：等离子体反应器，例如用于处理半导体晶片的等离子体反应器，其中室的一部分由多个已经结合在一起的碳化硅片形成。可以通过扩散接合或通过使用诸如聚酰亚胺之类的粘合剂进行接合。这些碳化硅部件通常面对并限定等离子体区域。优选地，面向等离子体的表面涂覆有碳化硅膜，例如通过化学气相沉积沉积的碳化硅膜，其更耐抗等离子体侵蚀。有利地，不同的部分形成为与形成有利的等离子体一致的不同的电阻率。

8. 发明授权

US06379574B1 Integrated post-etch treatment for a dielectric etch process 失效
标题翻译：用于电介质蚀刻工艺的集成后蚀刻处理
公开(公告)号：US06379574B1
公开(公告)日：2002-04-30
申请号：US09320251
申请日：1999-05-26
申请人： Hui Ou-Yang , Chih-Ping Yang , Lin Ye , Robert W. Wu , Chih-Pang Chen , You-Neng Cheng , Yang Chan-Lon , Tong-Yu Chen
发明人： Hui Ou-Yang , Chih-Ping Yang , Lin Ye , Robert W. Wu , Chih-Pang Chen , You-Neng Cheng , Yang Chan-Lon , Tong-Yu Chen
IPC分类号： B44C122
CPC分类号： H01L21/02063 , H01L21/31116
摘要： The present disclosure pertains to an integrated post-etch treatment method which is performed after a dielectric etch process. Using the method of the invention, byproducts formed on the sidewalls of contact vias during the dielectric etch process can be removed efficiently. The method of the invention also reduces or eliminates the problem of polymer accumulation on process chamber surfaces. An overlying photoresist layer and anti-reflection layer are removed during the performance of the post-etch treatment method. Typically, after the etch of a dielectric material to define pattern or interconnect filling spaces, a series of post-etch treatment steps is performed to remove residues remaining on the wafer after the dielectric etch process. According to the method of the present invention, a post-etch treatment method including one or more steps is performed after the dielectric etch process, preferably within the same processing chamber in which the dielectric etch process was performed. The post-etch treatment method comprises exposing a semiconductor structure to a plasma generated from a source gas comprising oxygen, a nitrogen-comprising gas, and a reactive gas comprising hydrogen, carbon, and fluorine. Two optional steps, a flushing step prior to the post-etch treatment and a cleaning step subsequent to the post-etch treatment, can be performed for the purpose of enhancing the fluorine and byproduct removal and post-etch chamber cleaning.
摘要翻译：本公开涉及在电介质蚀刻工艺之后执行的集成后蚀刻处理方法。使用本发明的方法，可以有效地去除在电介质蚀刻工艺期间在接触通孔的侧壁上形成的副产物。本发明的方法还减少或消除了聚合物在处理室表面上积聚的问题。在蚀刻后处理方法的执行期间，去除覆盖的光致抗蚀剂层和抗反射层。通常，在蚀刻电介质材料以限定图案或互连填充空间之后，执行一系列后蚀刻处理步骤以在电介质蚀刻工艺之后去除残留在晶片上的残留物。根据本发明的方法，在电介质蚀刻工艺之后，优选在进行电介质蚀刻工艺的相同处理室内执行包括一个或多个步骤的后蚀刻处理方法。蚀刻后处理方法包括将半导体结构暴露于由包含氧，含氮气体和包含氢，碳和氟的反应性气体的源气体产生的等离子体。可以执行两个可选步骤，即在蚀刻后处理之前的冲洗步骤和在蚀刻后处理之后的清洁步骤，以便增强氟和副产物去除以及蚀刻后清洁。

9. 发明授权

US06221782B1 Adjusting DC bias voltage in plasma chamber 失效
公开(公告)号：US06221782B1
公开(公告)日：2001-04-24
申请号：US09287701
申请日：1999-04-06
申请人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
发明人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
IPC分类号： H01L213065
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

10. 发明授权

US5965463A Silane etching process 失效
标题翻译：硅烷蚀刻工艺
公开(公告)号：US5965463A
公开(公告)日：1999-10-12
申请号：US888370
申请日：1997-07-03
申请人： Chunshi Cui , Robert W. Wu , Gerald Zheyao Yin
发明人： Chunshi Cui , Robert W. Wu , Gerald Zheyao Yin
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/00
CPC分类号： H01J37/32871 , H01L21/31116
摘要： A low-temperature process for selectively etching oxide with high selectivity over silicon in a high-density plasma reactor. The principal etching gas is a hydrogen-free fluorocarbon, such as C.sub.2 F.sub.6 or C.sub.4 F.sub.8, to which is added a silane or similar silicon-bearing gas, e.g., the monosilane SiH.sub.4. The fluorocarbon and silane are added in a ratio within the range of 2 to 5, preferably 2.5 to 3. The process provides high polysilicon selectivity, high photoresist facet selectivity, and steep profile angles. Selectivity is enhanced by operating at high flow rates. Silicon tetrafluoride may be added to enhance the oxide etching rate. The process may operate at temperatures of chamber parts below 180.degree. C. and even down to 120.degree. C. The process enables the fabrication of a bi-level contact structure with a wide process window.
摘要翻译：一种用于在高密度等离子体反应器中以高选择性选择性地氧化氧化物的硅的低温方法。主要蚀刻气体是无氢碳氟化合物，例如C 2 F 6或C 4 F 8，向其中加入硅烷或类似的含硅气体，例如单硅烷SiH 4。碳氟化合物和硅烷以2至5，优选2.5至3的比例加入。该方法提供高多晶硅选择性，高光致抗蚀剂面选择性和陡峭的轮廓角。选择性通过高流量运行而提高。可以加入四氟化硅以提高氧化物蚀刻速率。该过程可以在低于180℃，甚至低至120℃的室部件的温度下操作。该工艺使得能够制造具有宽工艺窗口的双层接触结构。

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