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1. 发明授权

US08210838B2 Method and device for producing electrodes for batteries 有权
标题翻译：电池用电极的制造方法及装置
公开(公告)号：US08210838B2
公开(公告)日：2012-07-03
申请号：US12814868
申请日：2010-06-14
申请人： Gerd Fehrmann , Thomas Fischer , Thomas Hucke , Roland Staub , Jürgen Drews , Tim Traulsen
发明人： Gerd Fehrmann , Thomas Fischer , Thomas Hucke , Roland Staub , Jürgen Drews , Tim Traulsen
IPC分类号： B29C43/18
CPC分类号： H01M4/0473 , H01M4/043 , H01M4/0435 , H01M4/048 , H01M4/13 , H01M4/622 , H01M4/624 , H01M4/72 , H01M10/052
摘要： A method and device for producing a battery electrode (5) by: pouring a powder mixture quantity (6a) into a cavity (2), laying an electrically conductive diverter (4) on powder mixture (6a), pouring a further quantity (6b) of same powder mixture (6) into same cavity (2), and compressing the two powder mixture quantities (6a, 6b). The device has a filling cavity (2) for powder mixture (6), at least one compression means (1) for compressing powder mixture (6), and support (7) and fixing means (8) for positioning and fixing an electrically conductive diverter (4). The diverter (4) is situated so that partial quantities (6a, 6b) of powder mixture (6) are located above and below diverter (4). The support means (7) and fixing means (8) are situated in such a way that a ratio of the partial quantities (6a, 6b) of powder mixture (6) above and below the diverter (4) remains essentially maintained.
摘要翻译：一种电池电极（5）的制造方法，其特征在于，通过以下方式制造电池电极（5）：将粉末混合物量（6a）注入空腔（2），将导电性导向器（4）铺设在粉末混合物（6a）上，）相同的粉末混合物（6）进入相同的空腔（2），并压缩两个粉末混合物量（6a，6b）。该装置具有用于粉末混合物（6）的填充腔（2），用于压缩粉末混合物（6）的至少一个压缩装置（1）和用于定位和固定导电的支撑件（7）和固定装置（8）分流器（4）。转向器（4）的位置使得粉末混合物（6）的部分量（6a，6b）位于转向器（4）上方和下方。支撑装置（7）和固定装置（8）的位置使得转向器（4）上方和下方的粉末混合物（6）的部分量（6a，6b）的比率基本保持不变。

2. 发明授权

US07758782B2 Method and device for producing electrodes for batteries 有权
标题翻译：电池用电极的制造方法及装置
公开(公告)号：US07758782B2
公开(公告)日：2010-07-20
申请号：US11608111
申请日：2006-12-07
申请人： Gerd Fehrmann , Thomas Fischer , Thomas Hucke , Roland Staub , Jürgen Drews , Tim Traulsen
发明人： Gerd Fehrmann , Thomas Fischer , Thomas Hucke , Roland Staub , Jürgen Drews , Tim Traulsen
IPC分类号： B29C43/04 , B29C43/18
CPC分类号： H01M4/0473 , H01M4/043 , H01M4/0435 , H01M4/048 , H01M4/13 , H01M4/622 , H01M4/624 , H01M4/72 , H01M10/052
摘要： A method and device for producing a battery electrode (5) by: pouring a powder mixture quantity (6a) into a cavity (2), laying an electrically conductive diverter (4) on powder mixture (6a), pouring a further quantity (6b) of same powder mixture (6) into same cavity (2), and compressing the two powder mixture quantities (6a, 6b). The device has a filling cavity (2) for powder mixture (6), at least one compression means (1) for compressing powder mixture (6), and support (7) and fixing means (8) for positioning and fixing an electrically conductive diverter (4). The diverter (4) is situated so that partial quantities (6a, 6b) of powder mixture (6) are located above and below diverter (4). The support means (7) and fixing means (8) are situated in such a way that a ratio of the partial quantities (6a, 6b) of powder mixture (6) above and below the diverter (4) remains essentially maintained.
摘要翻译：一种电池电极（5）的制造方法，其特征在于，通过以下方式制造电池电极（5）：将粉末混合物量（6a）注入空腔（2），将导电性导向器（4）放置在粉末混合物（6a）上，）相同的粉末混合物（6）进入相同的空腔（2），并压缩两个粉末混合物量（6a，6b）。该装置具有用于粉末混合物（6）的填充腔（2），用于压缩粉末混合物（6）的至少一个压缩装置（1）和用于定位和固定导电的支撑件（7）和固定装置（8）分流器（4）。转向器（4）的位置使得粉末混合物（6）的部分量（6a，6b）位于转向器（4）上方和下方。支撑装置（7）和固定装置（8）的位置使得转向器（4）上方和下方的粉末混合物（6）的部分量（6a，6b）的比率基本保持不变。

3. 发明申请

US20100243102A1 METHOD AND DEVICE FOR PRODUCING ELECTRODES FOR BATTERIES 有权
标题翻译：用于生产电池电极的方法和装置
公开(公告)号：US20100243102A1
公开(公告)日：2010-09-30
申请号：US12814868
申请日：2010-06-14
申请人： Gerd Fehrmann , Thomas Fischer , Thomas Hucke , Roland Staub , Jürgen Drews , Tim Traulsen
发明人： Gerd Fehrmann , Thomas Fischer , Thomas Hucke , Roland Staub , Jürgen Drews , Tim Traulsen
IPC分类号： B65B1/24 , H01M4/04
CPC分类号： H01M4/0473 , H01M4/043 , H01M4/0435 , H01M4/048 , H01M4/13 , H01M4/622 , H01M4/624 , H01M4/72 , H01M10/052
摘要： A method and device for producing a battery electrode (5) by: pouring a powder mixture quantity (6a) into a cavity (2), laying an electrically conductive diverter (4) on powder mixture (6a), pouring a further quantity (6b) of same powder mixture (6) into same cavity (2), and compressing the two powder mixture quantities (6a, 6b). The device has a filling cavity (2) for powder mixture (6), at least one compression means (1) for compressing powder mixture (6), and support (7) and fixing means (8) for positioning and fixing an electrically conductive diverter (4). The diverter (4) is situated so that partial quantities (6a, 6b) of powder mixture (6) are located above and below diverter (4). The support means (7) and fixing means (8) are situated in such a way that a ratio of the partial quantities (6a, 6b) of powder mixture (6) above and below the diverter (4) remains essentially maintained.
摘要翻译：一种电池电极（5）的制造方法，其特征在于，通过以下方式制造电池电极（5）：将粉末混合物量（6a）注入空腔（2），将导电性导向器（4）铺设在粉末混合物（6a）上，）相同的粉末混合物（6）进入相同的空腔（2），并压缩两个粉末混合物量（6a，6b）。该装置具有用于粉末混合物（6）的填充腔（2），用于压缩粉末混合物（6）的至少一个压缩装置（1）和用于定位和固定导电的支撑件（7）和固定装置（8）分流器（4）。转向器（4）的位置使得粉末混合物（6）的部分量（6a，6b）位于转向器（4）上方和下方。支撑装置（7）和固定装置（8）的位置使得转向器（4）上方和下方的粉末混合物（6）的部分量（6a，6b）的比率基本保持不变。

4. 发明申请

US20090179303A1 Vertical Bipolar Transistor 有权
标题翻译：垂直双极晶体管
公开(公告)号：US20090179303A1
公开(公告)日：2009-07-16
申请号：US11792015
申请日：2005-12-12
申请人： Bernd Heinemann , Holger Rücker , Jürgen Drews , Steffen Marschmayer
发明人： Bernd Heinemann , Holger Rücker , Jürgen Drews , Steffen Marschmayer
IPC分类号： H01L29/732 , H01L21/331
CPC分类号： H01L29/66287 , H01L29/1004 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline semiconductor material of a second conductivity type, which is either in the form of a collector or an emitter, and which has a first heightwise portion and an adjoining second heightwise portion which is further away from the substrate interior in a heightwise direction, wherein only the first heightwise portion is enclosed by the insulation region in lateral directions perpendicular to the heightwise direction, a second semiconductor electrode of semiconductor material of the second conductivity type, which is in the form of the other type of semiconductor electrode, a base of monocrystalline semiconductor material of the first conductivity type, and a base connection region having a monocrystalline portion which in a lateral direction laterally surrounds the second heightwise portion, which is further towards the substrate interior as viewed from the base, of the first semiconductor electrode, and which rests with its underside directly on the insulation region.
摘要翻译：一种垂直异双极晶体管，包括第一导电类型的半导体材料的衬底和设置在其中的绝缘区域，布置在绝缘区域的开口中的第一半导体电极，并且包括第二导电类型的单晶半导体材料，收集器或发射器的形式，并且具有第一高度部分和相邻的第二高度部分，其在高度方向上远离基板内部，其中只有第一高度方向部分被垂直的横向方向上的绝缘区域包围第二导电类型的半导体材料的第二半导体电极是另一种类型的半导体电极的形式的第二半导体电极，第一导电类型的单晶半导体材料的基底和具有第一导电类型的基底连接区域单晶部分横向方向横向地围绕第二高度方向部分，第二高度方向部分从第一半导体电极的基部朝向基板内部，并且其下侧直接位于绝缘区域上。

5. 发明申请

US20090206335A1 Bipolar complementary semiconductor device 有权
标题翻译：双极互补半导体器件
公开(公告)号：US20090206335A1
公开(公告)日：2009-08-20
申请号：US10581127
申请日：2004-12-01
申请人： Bernd Heinemann , Jürgen Drews , Steffen Marschmayer , Holger Rücker
发明人： Bernd Heinemann , Jürgen Drews , Steffen Marschmayer , Holger Rücker
IPC分类号： H01L27/082 , H01L29/04 , H01L21/8228 , H01L21/782
CPC分类号： H01L21/82285 , H01L21/8249 , H01L27/0623 , H01L27/0826
摘要： The invention relates to a BiCMOS device comprising a substrate having a first type of conductivity and a number of active regions that are provided therein and are delimited in a lateral direction by flat field-insulating regions. Vertical npn bipolar epitaxial base transistors are disposed in a first partial number of the active regions while vertical pnp bipolar epitaxial base transistors are arranged in a second partial number of the active regions of the BiCMOS device. One transistor type or both transistor types are provided with both a collector region and a collector contact region in one and the same respective active region. In order to improve the high frequency characteristics, an insulation doping region that is configured so as to electrically insulate the collector and the substrate is provided between the collector region and the substrate exclusively in a first transistor type in which the type of conductivity of the substrate corresponds to that of the collector region. In addition, the collector region of the first transistor type or both transistor types is laterally delimited by the flat field-insulating regions.
摘要翻译：本发明涉及一种BiCMOS器件，其包括具有第一类型的导电性的衬底和设置在其中的多个有源区，并且通过平坦的场绝缘区在横向方向上界定。垂直npn双极外延基极晶体管被布置在第一部分数量的有源区中，而垂直pnp双极外延基极晶体管被布置在BiCMOS器件的有效区的第二部分数目中。一个晶体管类型或两个晶体管类型在同一个相同的有源区域中设置有集电极区域和集电极接触区域。为了提高高频特性，仅在集电极区域和衬底之间设置用于使集电极和衬底电绝缘的绝缘掺杂区域仅以基板的导电性类型的第一晶体管类型提供对应于集电极区域。此外，第一晶体管类型或两种晶体管类型的集电极区域由平坦的场绝缘区域横向界定。

6. 发明授权

US08330237B2 Corrosion-resistant MEMS component and method for the production thereof 有权
标题翻译：耐腐蚀MEMS元件及其制造方法
公开(公告)号：US08330237B2
公开(公告)日：2012-12-11
申请号：US12452426
申请日：2008-06-27
申请人： Jürgen Drews , Karl-Ernst Ehwald , Katrin Schulz
发明人： Jürgen Drews , Karl-Ernst Ehwald , Katrin Schulz
IPC分类号： H01L29/84
CPC分类号： B81B7/0012 , G01N11/16
摘要： An MEMS component including a monolithically integrated electronic component with a multi-plane conductor track layer stack which is arranged on a substrate and into which is integrated a cantilevered elastically movable metallic actuator which is arranged in the multi-plane conductor track layer stack at the level of a conductor track plane and is connected by via contacts to conductor track planes which are arranged thereabove or therebeneath and which apart from an opening in the region of the actuator are separated from the conductor track plane of the actuator by a respective intermediate plane insulator layer, wherein the actuator is formed from a metallically conductive layer or layer combination which is resistant to corrosive liquids or gases and which contains titanium nitride or consists of titanium nitride.
摘要翻译：一种MEMS组件，包括具有多平面导体轨道层堆叠的单片集成电子部件，其布置在基板上并且集成有悬臂弹性可移动金属致动器，其布置在多平面导体轨道层堆叠中的导体轨道平面，并且通过通孔触点连接到布置在其上方或其下方的导体轨道平面，并且除了致动器的区域中的开口之外，通过相应的中间平面绝缘体层与致动器的导体轨道平面分离其中所述致动器由对腐蚀性液体或气体具有耐受氮化钛或由氮化钛组成的金属导电层或层组合形成。

7. 发明授权

US07855404B2 Bipolar complementary semiconductor device 有权
标题翻译：双极互补半导体器件
公开(公告)号：US07855404B2
公开(公告)日：2010-12-21
申请号：US10581127
申请日：2004-12-01
申请人： Bernd Heinenman , Jürgen Drews , Steffen Marschmayer , Holger Rücker
发明人： Bernd Heinenman , Jürgen Drews , Steffen Marschmayer , Holger Rücker
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L21/82285 , H01L21/8249 , H01L27/0623 , H01L27/0826
摘要： A complementary BiCMOS semiconductor device comprises a substrate of a first conductivity type and a number of active regions which are provided therein and which are delimited in the lateral direction by shallow field insulation regions, in which vertical npn-bipolar transistors with an epitaxial base are arranged in a first subnumber of the active regions and vertical pnp-bipolar transistors with an epitaxial base are arranged in a second subnumber of the active regions, wherein either one transistor type or both transistor types have both a collector region and also a collector contact region in one and the same respective active region. To improve the high-frequency properties exclusively in a first transistor type in which the conductivity type of the substrate is identical to that of the collector region, an insulation doping region is provided between the collector region and the substrate.
摘要翻译：互补BiCMOS半导体器件包括第一导电类型的衬底和设置在其中的多个有源区，并且通过浅场绝缘区在横向上限定，其中布置有具有外延基底的垂直npn双极晶体管在有源区的第一子数目和具有外延基极的垂直pnp双极晶体管布置在有源区的第二子数目中，其中一个晶体管类型或两个晶体管类型都具有集电极区和集电极接触区同一个相同的活跃区域。为了提高专用于基板的导电类型与集电极区域的导电类型相同的第一晶体管类型的高频特性，在集电极区域和基板之间设置绝缘掺杂区域。

8. 发明授权

US07880270B2 Vertical bipolar transistor 有权
标题翻译：垂直双极晶体管
公开(公告)号：US07880270B2
公开(公告)日：2011-02-01
申请号：US11792015
申请日：2005-12-12
申请人： Bernd Heinemann , Holger Rücker , Jürgen Drews , Steffen Marschmeyer
发明人： Bernd Heinemann , Holger Rücker , Jürgen Drews , Steffen Marschmeyer
IPC分类号： H01L29/732
CPC分类号： H01L29/66287 , H01L29/1004 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline semiconductor material of a second conductivity type, which is either in the form of a collector or an emitter, and which has a first heightwise portion and an adjoining second heightwise portion which is further away from the substrate interior in a heightwise direction, wherein only the first heightwise portion is enclosed by the insulation region in lateral directions perpendicular to the heightwise direction, a second semiconductor electrode of semiconductor material of the second conductivity type, which is in the form of the other type of semiconductor electrode, a base of monocrystalline semiconductor material of the first conductivity type, and a base connection region having a monocrystalline portion which in a lateral direction laterally surrounds the second heightwise portion, which is further towards the substrate interior as viewed from the base, of the first semiconductor electrode, and which rests with its underside directly on the insulation region.
摘要翻译：一种垂直异双极晶体管，包括第一导电类型的半导体材料的衬底和设置在其中的绝缘区域，布置在绝缘区域的开口中的第一半导体电极，并且包括第二导电类型的单晶半导体材料，收集器或发射器的形式，并且具有第一高度部分和相邻的第二高度部分，其在高度方向上远离基板内部，其中只有第一高度方向部分被垂直的横向方向上的绝缘区域包围第二导电类型的半导体材料的第二半导体电极是另一种类型的半导体电极的形式的第二半导体电极，第一导电类型的单晶半导体材料的基底和具有第一导电类型的基底连接区域单晶部分横向方向横向地围绕第二高度方向部分，第二高度方向部分从第一半导体电极的基部朝向基板内部，并且其下侧直接位于绝缘区域上。

9. 发明申请

US20100207216A1 CORROSION-RESISTANT MEMS COMPONENT AND METHOD FOR THE PRODUCTION THEREOF 有权
标题翻译：耐腐蚀MEMS组件及其生产方法
公开(公告)号：US20100207216A1
公开(公告)日：2010-08-19
申请号：US12452426
申请日：2008-06-27
申请人： Jürgen Drews , Karl-Ernst Ehwald , Katrin Schulz
发明人： Jürgen Drews , Karl-Ernst Ehwald , Katrin Schulz
IPC分类号： H01L29/84 , H01L21/30
CPC分类号： B81B7/0012 , G01N11/16
摘要： An MEMS component including a monolithically integrated electronic component with a multi-plane conductor track layer stack which is arranged on a substrate and into which is integrated a cantilevered elastically movable metallic actuator which is arranged in the multi-plane conductor track layer stack at the level of a conductor track plane and is connected by via contacts to conductor track planes which are arranged thereabove or therebeneath and which apart from an opening in the region of the actuator are separated from the conductor track plane of the actuator by a respective intermediate plane insulator layer, wherein the actuator is formed from a metallically conductive layer or layer combination which is resistant to corrosive liquids or gases and which contains titanium nitride or consists of titanium nitride.
摘要翻译：一种MEMS组件，包括具有多平面导体轨道层堆叠的单片集成电子部件，其布置在基板上并且集成有悬臂弹性可移动金属致动器，其布置在多平面导体轨道层堆叠中的导体轨道平面，并且通过通孔触点连接到布置在其上方或其下方的导体轨道平面，并且除了致动器的区域中的开口之外，通过相应的中间平面绝缘体层与致动器的导体轨道平面分离其中所述致动器由对腐蚀性液体或气体具有耐受氮化钛或由氮化钛组成的金属导电层或层组合形成。

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