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    • 4. 发明授权
    • Photoelectron switching in semiconductors in the picosecond time domain
    • 皮秒时域的半导体光电子切换
    • US4431914A
    • 1984-02-14
    • US296721
    • 1981-08-27
    • Gerard MourouSteven L. Williamson
    • Gerard MourouSteven L. Williamson
    • H01J31/26H03K17/78H01J40/14H01J31/50
    • H01J31/26H03K17/78
    • Picosecond switching of electric current in response to optical signals is obtained by conversion of the optical signal, such as an optical pulse, into a photoelectron burst (a photoelectronic signal) which is a faithful temporal replica of the optical signal. Electron optics increase the energy of the electrons of the photoelectronic signal which is imaged so as to illuminate essentially the entire gap formed between electrodes on a body of semiconductor material. The photoelectrons are absorbed in the semiconductor material to create throughout the gap a degenerate layer. The gap geometry and the image formed by the optical signal on a photocathode, which provides the photoelectronic signal, are such that space charge effects do not distort the photoelectronic signal and a temporal replica of the optical signal illuminates the entire gap. The gap geometry affords broad bandwidth operation. Due to the gain in the system, the high photoelectron energy obtainable after electron acceleration permits the use of large band gap semiconductor materials which have high dielectric strength and are not prone to thermal breakdown effects. By deflecting the photoelectrons across a plurality of side-by-side gaps on the semiconductor, extremely high speed demultiplexing of extremely high frequency optical signals (in picosecond samples) can be obtained.
    • 通过将光信号(例如光脉冲)转换成光信号的光电子脉冲(光电子信号)获得响应于光信号的电流的皮秒转换,这是光信号的忠实时间复制品。 电子光学器件增加被成像的光电子信号的电子的能量,以基本上照射形成在半导体材料体上的电极之间的整个间隙。 光电子被吸收在半导体材料中以在整个间隙中形成退化层。 由提供光电子信号的光电阴极上的光学信号形成的间隙几何形状和图像使得空间电荷效应不会使光电子信号失真,并且光信号的时间副本照亮整个间隙。 间隙几何提供宽带宽操作。 由于系统的增益,电子加速后可获得的高光电子能量允许使用具有高介电强度并且不易发生热击穿效应的大带隙半导体材料。 通过偏转半导体上的多个并排间隙的光电子,可以获得超高频光信号(皮秒样本)的极高速解复用。
    • 5. 发明授权
    • Laser system using organic dye amplifier
    • 激光系统采用有机染料放大器
    • US4425652A
    • 1984-01-10
    • US162842
    • 1980-06-25
    • Gerard Mourou
    • Gerard Mourou
    • H01S3/094H01S3/23H01S3/09
    • H01S3/2358H01S3/094034H01S3/2308
    • A laser system generates high energy ultra-short pulses using a dye cell amplifier driven by ultra-short pulses from a dye laser and pumped by pump pulses from a laser amplifier. The laser amplifier and dye laser are synchronously driven and pumped by the same laser such that the signal pulse from the dye laser arrives at the dye cell amplifier immediately upon the completion of population inversion therein in response to the pump pulse. Efficient high-power, ultra-short laser pulses are obtained from the dye amplifier, since amplified spontaneous emission (ASE) is avoided. Doubler crystals are used to provide the pump pulses to the dye laser from the common driver laser and to provide pump pulses from the laser amplifier to the dye cell amplifier at the proper wave length for the materials used therein. This system is tunable by selecting appropriate dyes for the dye laser and dye cell amplifier and/or tuning elements within the dye laser cavity.
    • 激光系统使用由染料激光器的超短脉冲驱动并由来自激光放大器的泵浦脉冲泵浦的染料单元放大器产生高能超短脉冲。 激光放大器和染料激光器由相同的激光器同步驱动和泵浦,使得来自染料激光器的信号脉冲在响应于泵浦脉冲完成其总体反转之后立即到达染料单元放大器。 从染料放大器获得高效的大功率超短激光脉冲,因为避免了放大的自发发射(ASE)。 双峰晶体用于从普通驱动激光器向染料激光器提供泵浦脉冲,并为其中使用的材料以适当的波长提供从激光放大器到染料单元放大器的泵浦脉冲。 该系统可以通过为染料激光器和染料单元放大器和/或染料激光器腔内的调谐元件选择合适的染料来调节。
    • 7. 发明授权
    • Methods and apparatus for generating microwave pulses and for the
measurement and control thereof
    • 用于产生微波脉冲并用于其测量和控制的方法和装置
    • US4329686A
    • 1982-05-11
    • US160691
    • 1980-06-18
    • Gerard Mourou
    • Gerard Mourou
    • G01S7/282G01S13/86
    • G01S7/282
    • Picosecond duration microwave pulses are generated used a laser activated semiconductor switch. High voltages are switched with picosecond rise time and result in the establishment of microwave pulses of frequency spectrum commensurate with the rise time of the voltage and wave guide parameters of a wave guide in which the switch is disposed. The activating light pulse is synchronous with the microwave pulse. A system, including an antenna and radar receiver, is responsive to the light pulse and return signals from a target on which the microwave pulse is incident. Reflection measurements of the microwave pulses from a body of semiconductor material which is optically excited by the light pulses relatively delayed between the generation of successive microwave pulses, indicate the duration of the microwave pulses.
    • 使用激光激活半导体开关产生皮秒持续时间微波脉冲。 高电压以皮秒上升时间切换,导致建立与设置开关的波导的电压和波导参数的上升时间相当的频谱的微波脉冲。 激活光脉冲与微波脉冲同步。 包括天线和雷达接收器的系统响应光脉冲并从微波脉冲入射的目标返回信号。 来自半导体材料体的微波脉冲的反射测量,其由在产生连续的微波脉冲之间相对延迟的光脉冲光学激发,表示微波脉冲的持续时间。
    • 10. 发明授权
    • Apparatus for switching high voltage pulses with picosecond accuracy
    • 用于以皮秒精度切换高电压脉冲的装置
    • US4218618A
    • 1980-08-19
    • US13642
    • 1979-02-21
    • Gerard Mourou
    • Gerard Mourou
    • G02F1/03H01L31/02H01L31/0248H01L31/08H01L31/09H03K3/36H03K3/42H03K3/57H03K17/78H01J40/14
    • G02F1/0327H01L31/08H01L31/09H03K17/78H03K3/42H03K3/57
    • Switching of high voltage pulses (of the order of 10 kV) of durations from about 10.mu.s (microseconds) to 10ms (milliseconds) with picosecond accuracy is accomplished by a laser activated semiconductor switch made up of a body (18) of high resistivity semiconductor material, such as nearly intrinsic silicon, integrated into a wide band (10GHz) geometry, which is part of a transmission line (28). The high bias voltage pulses are obtained by charging the line in synchronism with the generation of the laser pulse. The high voltage bias pulse width can be typically in the range of 10.mu.s- 10ms, and the length of the body (18) is selected so as to prevent thermal breakdown of the semiconductor with such pulse widths. The energy of the laser pulse switches the high voltage to produce a multikilovolt output pulse suitable for driving devices, such as streak cameras or Pockels cells, by the same laser, which need to be synchronized with picosecond accuracy to the laser pulse. The length of the transmission line may be varied to adjust the width of the multikilovolt output pulse.
    • 通过由高电阻率的主体(18)组成的激光激活的半导体开关来实现具有皮秒精度的持续时间从10μs(微秒)到10ms(毫秒)的高电压脉冲(大约10kV) 集成到作为传输线(28)的一部分的宽带(10GHz)几何形状的诸如几乎本征的硅的半导体材料。 通过与产生激光脉冲同步地对线路充电来获得高偏压脉冲。 高电压偏置脉冲宽度通常可以在10μs-10ms的范围内,并且选择主体(18)的长度,以便防止具有这种脉冲宽度的半导体的热击穿。 激光脉冲的能量切换高电压,以产生适用于驱动器件的多千兆伏特输出脉冲,例如条纹相机或Pockels单元,需要与激光脉冲的皮秒精度同步。 可以改变传输线的长度以调整多千伏特输出脉冲的宽度。