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1. 发明授权

US09093293B2 High voltage low current surface emitting light emitting diode 有权
标题翻译：高压低电流表面发光二极管
公开(公告)号：US09093293B2
公开(公告)日：2015-07-28
申请号：US13190094
申请日：2011-07-25
申请人： James Ibbetson , Sten Heikman , Julio Garceran , George Brandes
发明人： James Ibbetson , Sten Heikman , Julio Garceran , George Brandes
IPC分类号： H01L27/15 , H01L25/075 , H01L33/00 , H01L33/62
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/62 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode chip includes a submount, a reflective layer on the submount, an insulating layer on the reflective layer opposite the submount, and a plurality of sub-LEDs on the insulating layer. Each of the sub-LEDs includes a first face adjacent to the submount and a transparent contact on the first face between the sub-LED and the insulating layer and electrical interconnects between adjacent ones of the sub-LEDs.
摘要翻译：一种发光二极管芯片，包括基座，底座上的反射层，与基座相反的反射层上的绝缘层，以及绝缘层上的多个子LED。每个子LED包括与子基座相邻的第一面和在子LED与绝缘层之间的第一面上的透明触点和相邻的子LED之间的电互连。

2. 发明申请

US20080112452A1 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US20080112452A1
公开(公告)日：2008-05-15
申请号：US11600604
申请日：2006-11-15
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01S5/00 , H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

3. 发明申请

US20050009310A1 Semi-insulating GaN and method of making the same 有权
标题翻译：半绝缘GaN及其制造方法
公开(公告)号：US20050009310A1
公开(公告)日：2005-01-13
申请号：US10618024
申请日：2003-07-11
申请人： Robert Vaudo , Xueping Xu , George Brandes
发明人： Robert Vaudo , Xueping Xu , George Brandes
IPC分类号： H01L21/205 , H01L29/20 , H01L29/207 , H01L21/337 , H01L21/265 , H01L29/06 , H01L31/153
CPC分类号： H01L29/207 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L21/02581 , H01L21/0262 , H01L29/2003
摘要： Large-area, single crystal semi-insulating gallium nitride that is usefully employed to form substrates for fabricating GaN devices for electronic and/or optoelectronic applications. The large-area, semi-insulating gallium nitride is readily formed by doping the growing gallium nitride material during growth thereof with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride.
摘要翻译：大面积的单晶半绝缘氮化镓，其有效地用于形成用于制造用于电子和/或光电应用的GaN器件的衬底。大面积半绝缘氮化镓容易通过在其生长期间掺杂生长的氮化镓材料与深受主掺杂物质（例如Mn，Fe，Co，Ni，Cu等）来形成，以补偿在氮化镓，并赋予氮化镓半绝缘特性。

4. 发明申请

US20100273281A1 LASER DIODE AND METHOD FOR FABRICATING SAME 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US20100273281A1
公开(公告)日：2010-10-28
申请号：US12826305
申请日：2010-06-29
申请人： ARPAN CHAKRABORTY , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： ARPAN CHAKRABORTY , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01L21/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

5. 发明申请

US20090206322A1 BROADBAND LIGHT EMITTING DEVICE LAMPS FOR PROVIDING WHITE LIGHT OUTPUT 有权
标题翻译：用于提供白光输出的宽带灯发光装置灯
公开(公告)号：US20090206322A1
公开(公告)日：2009-08-20
申请号：US12371226
申请日：2009-02-13
申请人： George Brandes
发明人： George Brandes
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： A multi-chip light emitting device (LED) lamp for providing white light includes first and second broadband LED chips. The first LED chip includes a multi-quantum well active region having a first plurality of alternating active and barrier layers. The first plurality of active layers respectively include different relative concentrations of at least two elements of a first semiconductor compound, and are respectively configured to emit light of a plurality of different emission wavelengths over a first wavelength range. The second LED chip includes a multi-quantum well active region having a second plurality of alternating active and barrier layers. The second plurality of active layers respectively include different relative concentrations of at least two elements of a second semiconductor compound, and are respectively configured to emit light of a plurality of different emission wavelengths over a second wavelength range including wavelengths greater than those of the first wavelength range. The light emitted by the first and second LED chips combines to provide white light. Related devices are also discussed.
摘要翻译：用于提供白光的多芯片发光器件（LED）灯包括第一和第二宽带LED芯片。第一LED芯片包括具有第一多个交替的有源层和阻挡层的多量子阱有源区。第一多个有源层分别包括第一半导体化合物的至少两个元素的不同相对浓度，并且分别被配置为发射在第一波长范围上的多个不同发射波长的光。第二LED芯片包括具有第二多个交替的有源和阻挡层的多量子阱有源区。第二多个有源层分别包括第二半导体化合物的至少两个元件的不同相对浓度，并且分别被配置为在包括比第一波长的波长大的波长的第二波长范围内发射多个不同发射波长的光范围。由第一和第二LED芯片发出的光结合起来提供白光。还讨论了相关设备。

6. 发明申请

US20060228584A1 Vicinal gallium nitride substrate for high quality homoepitaxy 有权
标题翻译：用于高质量同质外延的最终氮化镓衬底
公开(公告)号：US20060228584A1
公开(公告)日：2006-10-12
申请号：US11431990
申请日：2006-05-11
申请人： Xueping Xu , Robert Vaudo , Jeffrey Flynn , George Brandes
发明人： Xueping Xu , Robert Vaudo , Jeffrey Flynn , George Brandes
IPC分类号： B32B9/00 , B32B19/00
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L29/045 , H01L29/2003 , Y10T83/0524 , Y10T428/31
摘要： A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.
摘要翻译： III-V族氮化物，例如GaN，衬底，其包括从<0001>方向切除的（0001）表面主要朝向选自<10-10>和<11-20>方向的方向切割在约0.2至约10度的范围内的角度，其中表面具有通过50×50μm2μmAFM扫描测量的RMS粗糙度小于1nm，位错密度小于 3E6厘米-2。可以通过在对应的邻位异质外延基底（例如切断蓝宝石）上的基底主体的切削研磨或生长来对对应的原子块或晶片坯料进行切割切片来形成基底。在制造III-V族氮化物微电子和光电子器件时，该衬底有效地用于同质外延沉积。

7. 发明授权

US08679876B2 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US08679876B2
公开(公告)日：2014-03-25
申请号：US12826305
申请日：2010-06-29
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

8. 发明授权

US08022388B2 Broadband light emitting device lamps for providing white light output 有权
标题翻译：用于提供白光输出的宽带发光装置灯
公开(公告)号：US08022388B2
公开(公告)日：2011-09-20
申请号：US12371226
申请日：2009-02-13
申请人： George Brandes
发明人： George Brandes
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： A multi-chip light emitting device (LED) lamp for providing white light includes first and second broadband LED chips. The first LED chip includes a multi-quantum well active region having a first plurality of alternating active and barrier layers. The first plurality of active layers respectively include different relative concentrations of at least two elements of a first semiconductor compound, and are respectively configured to emit light of a plurality of different emission wavelengths over a first wavelength range. The second LED chip includes a multi-quantum well active region having a second plurality of alternating active and barrier layers. The second plurality of active layers respectively include different relative concentrations of at least two elements of a second semiconductor compound, and are respectively configured to emit light of a plurality of different emission wavelengths over a second wavelength range including wavelengths greater than those of the first wavelength range. The light emitted by the first and second LED chips combines to provide white light. Related devices are also discussed.
摘要翻译：用于提供白光的多芯片发光器件（LED）灯包括第一和第二宽带LED芯片。第一LED芯片包括具有第一多个交替的有源层和阻挡层的多量子阱有源区。第一多个有源层分别包括第一半导体化合物的至少两个元件的不同相对浓度，并且分别被配置为发射在第一波长范围上的多个不同发射波长的光。第二LED芯片包括具有第二多个交替的有源和阻挡层的多量子阱有源区。第二多个有源层分别包括第二半导体化合物的至少两个元件的不同相对浓度，并且分别被配置为在包括比第一波长的波长大的波长的第二波长范围内发射多个不同发射波长的光范围。由第一和第二LED芯片发出的光结合起来提供白光。还讨论了相关设备。

9. 发明申请

US20060152140A1 Light emission device 有权
标题翻译：发光装置
公开(公告)号：US20060152140A1
公开(公告)日：2006-07-13
申请号：US11032363
申请日：2005-01-10
申请人： George Brandes
发明人： George Brandes
IPC分类号： H01J1/62
CPC分类号： C09K11/623 , C09K11/586 , C09K11/7421 , C09K11/7702 , C09K11/7721 , C09K11/7734 , F21K9/00 , F21Y2113/17 , F21Y2115/10 , H01L25/0753 , H01L2924/0002 , Y02B20/181 , Y10S362/80 , H01L2924/00
摘要： A light emission device, including at least two LED dies having differing spectral output from one another; and phosphor material including one or more phosphors, arranged to receive spectral output from at least one of the LED dies and to responsively emit a phosphor output, as a component of a spectral output of the light emission device. In a specific arrangement, the multiple LED dies and phosphor material are arranged to produce a white light output having a color temperature selected from among (i) color temperature in a range of from 1350° K to 1550° K, (ii) color temperature in a range of from 2400° K to 3550° K and (iii) color temperature in a range of from 4950° K to 6050° K.
摘要翻译：一种发光器件，包括彼此具有不同光谱输出的至少两个LED管芯; 以及包括一种或多种磷光体的磷光体材料，其布置成从所述LED管芯中的至少一个接收光谱输出并响应地发射磷光体输出，作为所述发光器件的光谱输出的分量。在具体的布置中，多个LED管芯和磷光体材料被布置成产生具有选自（i）1350°至1550°K范围内的色温的色温的白光输出，（ii）色温在2400°K至3550°K的范围内，（iii）色温范围为4950°K至6050°K。

10. 发明申请

US20050167697A1 High voltage switching devices and process for forming same 有权
标题翻译：高压开关器件及其形成工艺
公开(公告)号：US20050167697A1
公开(公告)日：2005-08-04
申请号：US10513009
申请日：2003-04-30
申请人： Jeffrey Flynn , George Brandes , Robert Vaudo
发明人： Jeffrey Flynn , George Brandes , Robert Vaudo
IPC分类号： C30B25/02 , C30B29/40 , H01L21/20 , H01L21/205 , H01L29/20 , H01L29/47 , H01L29/861 , H01L29/868 , H01L29/872 , H01L29/739
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/40 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/02664 , H01L29/861 , H01L29/868 , H01L29/872
摘要： The present invention relates to various switching device structures including Schottky diode (10), P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers (16) of low dopant concentration ( 2 KV).
摘要翻译：本发明涉及包括肖特基二极管（10），PN二极管和PIN二极管的各种开关器件结构，其特征在于低缺陷密度，低裂纹密度，低凹坑密度和足够厚度（>2.5μm）的GaN层（16 ）在导电GaN层（14）上生长的低掺杂浓度（<1E16cm-3）。这些器件在异质外延衬底（<2 KV）上实现了更高的击穿电压，并且在同质外延衬底（> 2KV）上实现了极高的击穿电压。

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