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1. 发明申请

US20070018198A1 High electron mobility electronic device structures comprising native substrates and methods for making the same 审中-公开
标题翻译：包括天然底物的高电子迁移率电子器件结构及其制造方法
公开(公告)号：US20070018198A1
公开(公告)日：2007-01-25
申请号：US11186001
申请日：2005-07-20
申请人： George Brandes , Xueping Xu , Joseph Dion , Robert Vaudo , Jeffrey Flynn
发明人： George Brandes , Xueping Xu , Joseph Dion , Robert Vaudo , Jeffrey Flynn
IPC分类号： H01L29/732
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： An electronic device structure comprises a substrate layer of semi-insulating AlxGayInzN, a first layer comprising AlxGayInzN, a second layer comprising Alx′Gay′Inz′N, and at least one conductive terminal disposed in or on any of the foregoing layers, with the first and second layers being adapted to form a two dimensional electron gas is provided. A thin (
摘要翻译：电子器件结构包括半绝缘的衬底层，包括Al x的第一层，在N z中，第二层包括Al x Si x Ga y In， SUB> z'N，以及至少一个导电端子，其设置在上述层中的任一层中或之中，其中第一层和第二层适于形成二维电子气。在天然半绝缘III-V衬底上同时外延生长薄（<1000nm）III-氮化物层，以提供改进的电子器件（例如，HEMT）结构。

2. 发明申请

US20050104162A1 Vicinal gallium nitride substrate for high quality homoepitaxy 有权
标题翻译：用于高质量同质外延的最终氮化镓衬底
公开(公告)号：US20050104162A1
公开(公告)日：2005-05-19
申请号：US10714307
申请日：2003-11-14
申请人： Xueping Xu , Robert Vaudo , Jeffrey Flynn , George Brandes
发明人： Xueping Xu , Robert Vaudo , Jeffrey Flynn , George Brandes
IPC分类号： H01L29/04 , H01L29/20
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L29/045 , H01L29/2003 , Y10T83/0524 , Y10T428/31
摘要： A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.
摘要翻译： III-V族氮化物，例如GaN，衬底，其包括从<0001>方向切除的（0001）表面主要朝向选自<10-10>和<11-20>方向的方向切割在约0.2至约10度的范围内的角度，其中表面具有通过50×50μm2μmAFM扫描测量的RMS粗糙度小于1nm，位错密度小于 3E6厘米-2。可以通过在对应的邻位异质外延基底（例如切断蓝宝石）上的基底主体的切削研磨或生长来对对应的原子块或晶片坯料进行切割切片来形成基底。在制造III-V族氮化物微电子和光电子器件时，该衬底有效地用于同质外延沉积。

3. 发明申请

US20060228584A1 Vicinal gallium nitride substrate for high quality homoepitaxy 有权
标题翻译：用于高质量同质外延的最终氮化镓衬底
公开(公告)号：US20060228584A1
公开(公告)日：2006-10-12
申请号：US11431990
申请日：2006-05-11
申请人： Xueping Xu , Robert Vaudo , Jeffrey Flynn , George Brandes
发明人： Xueping Xu , Robert Vaudo , Jeffrey Flynn , George Brandes
IPC分类号： B32B9/00 , B32B19/00
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L29/045 , H01L29/2003 , Y10T83/0524 , Y10T428/31
摘要： A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.
摘要翻译： III-V族氮化物，例如GaN，衬底，其包括从<0001>方向切除的（0001）表面主要朝向选自<10-10>和<11-20>方向的方向切割在约0.2至约10度的范围内的角度，其中表面具有通过50×50μm2μmAFM扫描测量的RMS粗糙度小于1nm，位错密度小于 3E6厘米-2。可以通过在对应的邻位异质外延基底（例如切断蓝宝石）上的基底主体的切削研磨或生长来对对应的原子块或晶片坯料进行切割切片来形成基底。在制造III-V族氮化物微电子和光电子器件时，该衬底有效地用于同质外延沉积。

4. 发明申请

US20050009310A1 Semi-insulating GaN and method of making the same 有权
标题翻译：半绝缘GaN及其制造方法
公开(公告)号：US20050009310A1
公开(公告)日：2005-01-13
申请号：US10618024
申请日：2003-07-11
申请人： Robert Vaudo , Xueping Xu , George Brandes
发明人： Robert Vaudo , Xueping Xu , George Brandes
IPC分类号： H01L21/205 , H01L29/20 , H01L29/207 , H01L21/337 , H01L21/265 , H01L29/06 , H01L31/153
CPC分类号： H01L29/207 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L21/02581 , H01L21/0262 , H01L29/2003
摘要： Large-area, single crystal semi-insulating gallium nitride that is usefully employed to form substrates for fabricating GaN devices for electronic and/or optoelectronic applications. The large-area, semi-insulating gallium nitride is readily formed by doping the growing gallium nitride material during growth thereof with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride.
摘要翻译：大面积的单晶半绝缘氮化镓，其有效地用于形成用于制造用于电子和/或光电应用的GaN器件的衬底。大面积半绝缘氮化镓容易通过在其生长期间掺杂生长的氮化镓材料与深受主掺杂物质（例如Mn，Fe，Co，Ni，Cu等）来形成，以补偿在氮化镓，并赋予氮化镓半绝缘特性。

5. 发明申请

US20060029832A1 High surface quality GaN wafer and method of fabricating same 审中-公开
标题翻译：高表面质量的GaN晶圆及其制造方法
公开(公告)号：US20060029832A1
公开(公告)日：2006-02-09
申请号：US11213535
申请日：2005-08-26
申请人： Xueping Xu , Robert Vaudo
发明人： Xueping Xu , Robert Vaudo
IPC分类号： B32B3/02 , B32B9/00 , B32B19/00
CPC分类号： C30B33/00 , C09G1/02 , C09K3/1409 , C09K3/1463 , C30B25/02 , C30B29/403 , H01L21/02005 , H01L21/02019 , H01L21/02024 , H01L21/30617 , H01L33/0075 , Y10T428/21
摘要： AlxGayInzN, wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10×10 μm2 area. The AlxGayInzN may be in the form of a wafer, which is chemically mechanically polished (CMP) using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. High quality AlxGayInzN wafers can be fabricated by steps including lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. CMP processing may be usefully employed to highlight crystal defects of an AlxGayInzN wafer.
摘要翻译：其中0 <= x <=1,0,0≤y≤1,0

6. 发明申请

US20080003786A1 LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PROCESS FOR MAKING THE SAME 有权
标题翻译：大面积，均匀的低偏差密度基体及其制造方法
公开(公告)号：US20080003786A1
公开(公告)日：2008-01-03
申请号：US11856222
申请日：2007-09-17
申请人： Xueping Xu , Robert Vaudo
发明人： Xueping Xu , Robert Vaudo
IPC分类号： H01L21/20 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/406 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L31/184 , H01L33/0075 , Y10T428/21 , Y10T428/265
摘要： Large area, uniformly low dislocation density single crystal Ill-V nitride material, e.g., gallium nitride having a large area of greater than 15 cm2, a thickness of at least 1 mm, an average dislocation density not exceeding 5E5 cm−2, and a dislocation density standard deviation ratio of less than 25%, and methods of forming same, are disclosed. Such material can be formed on a substrate by a process including (i) a first phase of growing the Ill-V nitride material on the substrate under pitted growth conditions, e.g., forming pits over at least 50% of the growth surface of the III-V nitride material, wherein the pit density on the growth surface is at least 102 pits/cm2 of the growth surface, and (ii) a second phase of growing the III-V nitride material under pit-filling conditions.
摘要翻译：大面积均匀低位错密度的单晶III-V族氮化物材料，例如具有大于15cm 2的大面积的氮化镓，至少1mm的厚度，不是的平均位错密度超过5E5cm -2，位错密度标准偏差比小于25％，以及其形成方法。这样的材料可以通过以下工艺在基底上形成，该方法包括：（i）在凹陷生长条件下在衬底上生长III-V族氮化物材料的第一阶段，例如在III的生长表面的至少50％上形成凹坑 -V氮化物材料，其中生长表面上的凹坑密度为生长表面的至少10 2个/厘米2，和（ii）生长的第二阶段在填埋条件下的III-V族氮化物材料。

7. 发明申请

US20050103257A1 Large area, uniformly low dislocation density GaN substrate and process for making the same 有权
标题翻译：大面积均匀低位错密度GaN衬底及其制造方法
公开(公告)号：US20050103257A1
公开(公告)日：2005-05-19
申请号：US10712351
申请日：2003-11-13
申请人： Xueping Xu , Robert Vaudo
发明人： Xueping Xu , Robert Vaudo
IPC分类号： C30B25/02 , C30B29/40 , H01L21/20 , H01L21/205 , H01L33/00 , B32B15/04 , B32B1/00 , B32B9/00 , B32B19/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/406 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L31/184 , H01L33/0075 , Y10T428/21 , Y10T428/265
摘要： Large area, uniformly low dislocation density single crystal III-V nitride material, e.g., gallium nitride having a large area of greater than 15 cm2, a thickness of at least 1 mm, an average dislocation density not exceeding 5E5 cm−2, and a dislocation density standard deviation ratio of less than 25%. Such material can be formed on a substrate by a process including (i) a first phase of growing the III-V nitride material on the substrate under pitted growth conditions, e.g., forming pits over at least 50% of the growth surface of the III-V nitride material, wherein the pit density on the growth surface is at least 102 pits/cm2 of the growth surface, and (ii) a second phase of growing the III-V nitride material under pit-filling conditions.
摘要翻译：大面积均匀低位错密度的单晶III-V族氮化物材料，例如，具有大于15cm 2的大面积的氮化镓，至少1mm的厚度，不是的平均位错密度超过5E5cm -2，位错密度标准偏差比小于25％。这样的材料可以通过以下工艺在基底上形成，该方法包括：（i）在凹陷生长条件下在衬底上生长III-V族氮化物材料的第一相，例如在III的生长表面的至少50％上形成凹坑 -V氮化物材料，其中生长表面上的凹坑密度为生长表面的至少10 2个/厘米2，和（ii）生长的第二阶段在填埋条件下的III-V族氮化物材料。

8. 发明授权

US08562937B2 Production of carbon nanotubes 有权
标题翻译：生产碳纳米管
公开(公告)号：US08562937B2
公开(公告)日：2013-10-22
申请号：US12158318
申请日：2006-12-19
申请人： J. Donald Carruthers , Xueping Xu , Luping Wang
发明人： J. Donald Carruthers , Xueping Xu , Luping Wang
IPC分类号： D01F9/127 , D01F9/12
CPC分类号： B01J20/205 , B01J20/20 , B01J21/185 , B01J23/74 , B01J23/881 , B01J23/882 , B01J23/883 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/08 , C01B2202/36 , Y02P20/582
摘要： A method and apparatus for manufacture of carbon nanotubes, in which a substrate is contacted with a hydrocarbonaceous feedstock containing a catalytically effective metal to deposit the feedstock on the substrate, followed by oxidation of the deposited feedstock to remove hydrocarbonaceous and carbonaceous components from the substrate, while retaining the catalytically effective metal thereon, and contacting of the substrate having retained catalytically effective metal thereon with a carbon source material to grow carbon nanotubes on the substrate. The manufacture can be carried out with a petroleum feedstock such as an oil refining atmospheric tower residue, to produce carbon nanotubes in high volume at low cost. Also disclosed is a composite including porous material having single-walled carbon nanotubes in pores thereof.
摘要翻译：一种用于制造碳纳米管的方法和装置，其中将基底与含有催化有效金属的含烃原料接触以将原料沉积在基底上，随后氧化沉积的原料以从基底中除去含碳和碳质的组分，同时在其上保留催化有效的金属，并且将具有保留的催化有效金属的基材与碳源材料接触以在基材上生长碳纳米管。可以用石油原料如炼油大气塔渣进行制造，以低成本大量生产碳纳米管。还公开了一种复合材料，其包括在其孔中具有单壁碳纳米管的多孔材料。

9. 发明申请

US20080265379A1 Laser Diode Orientation on Mis-Cut Substrates 有权
标题翻译：错误切割基板上的激光二极管方向
公开(公告)号：US20080265379A1
公开(公告)日：2008-10-30
申请号：US11994406
申请日：2006-06-27
申请人： George R. Brandes , Robert P. Vaudo , Xueping Xu
发明人： George R. Brandes , Robert P. Vaudo , Xueping Xu
IPC分类号： H01L29/04
CPC分类号： H01S5/32341 , Y10S438/973
摘要： A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate (201). In an illustrative implementation, a laser diode is oriented on a GaN substrate (201) wherein the GaN substrate includes a GaN (0001) surface off-cut from the direction predominantly towards either the or the family of directions. For a off-cut substrate, a laser diode cavity (207) may be oriented along the direction parallel to lattice surface steps (202) of the substrate (201) in order to have a cleaved laser facet that is orthogonal to the surface lattice steps. For off-cut substrate, the laser diode cavity may be oriented along the direction orthogonal to lattice surface steps (207) of the substrate (201) in order to provide a cleave laser facet that is aligned with the surface lattice steps.
摘要翻译：一种微电子组件，其中半导体器件结构定向地定位在离轴衬底（201）上。在说明性实施例中，激光二极管定向在GaN衬底（201）上，其中GaN衬底包括从主要朝向<1120>或<11 00>的方向从<0001>方向偏离的GaN（0001）家庭方向。对于<11 20>截割基板，激光二极管空腔（207）可以沿着平行于基板（201）的格子表面台阶（202）的<100°方向取向，以便具有切割的激光刻面这与表面晶格步骤正交。对于<11 00>切割衬底，激光二极管腔可以沿着与衬底（201）的晶格表面台阶（207）正交的<100°方向取向，以便提供与表面晶格步骤。

10. 发明申请

US20080124510A1 LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PROCESS FOR MAKING THE SAME 有权
标题翻译：大面积，均匀的低偏差密度基体及其制造方法
公开(公告)号：US20080124510A1
公开(公告)日：2008-05-29
申请号：US12026552
申请日：2008-02-05
申请人： Xueping Xu , Robert P. Vaudo
发明人： Xueping Xu , Robert P. Vaudo
IPC分类号： C01B21/06 , B32B3/02
CPC分类号： C30B29/406 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L31/184 , H01L33/0075 , Y10T428/21 , Y10T428/265
摘要： Large area single crystal III-V nitride material having an area of at least 2 cm2, having a uniformly low dislocation density not exceeding 3×106 dislocations per cm2 of growth surface area, and including a plurality of distinct regions having elevated impurity concentration, wherein each distinct region has at least one dimension greater than 50 microns, is disclosed. Such material can be formed on a substrate by a process including (i) a first phase of growing the III-V nitride material on the substrate under pitted growth conditions, e.g., forming pits over at least 50% of the growth surface of the III-V nitride material, wherein the pit density on the growth surface is at least 102 pits/cm2 of the growth surface, and (ii) a second phase of growing the III-V nitride material under pit-filling conditions.
摘要翻译：面积为至少2cm 2的大面积单晶III-V族氮化物材料，具有均匀低位错密度，不超过3×10 6个位错/ cm 2 并且包括具有升高的杂质浓度的多个不同区域，其中每个不同区域具有大于50微米的至少一个尺寸。这样的材料可以通过以下工艺在基底上形成，该方法包括：（i）在凹陷生长条件下在衬底上生长III-V族氮化物材料的第一相，例如在III的生长表面的至少50％上形成凹坑 -V氮化物材料，其中生长表面上的凹坑密度为生长表面的至少10 2个/厘米2，和（ii）生长的第二阶段在填埋条件下的III-V族氮化物材料。

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