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1. 发明申请

US20060105584A1 Device and method for thermally treating semiconductor wafers 有权
标题翻译：用于热处理半导体晶片的装置和方法
公开(公告)号：US20060105584A1
公开(公告)日：2006-05-18
申请号：US10524871
申请日：2003-07-25
申请人： Georg Roters , Steffen Frigge , Sing Tay , Yao Zhi Hu , Regina Hayn , Jens-Uwe Sachse , Erwin Schoer , Wilhelm Kegel
发明人： Georg Roters , Steffen Frigge , Sing Tay , Yao Zhi Hu , Regina Hayn , Jens-Uwe Sachse , Erwin Schoer , Wilhelm Kegel
IPC分类号： H01L21/324
CPC分类号： H01L21/67115 , H01L21/28247 , H01L21/32105
摘要： A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.
摘要翻译：一种用于热处理半导体晶片的装置，其具有至少一个待氧化的硅层和不被氧化的金属层，优选钨层。本发明的装置包括：至少一个辐射源; 接收衬底的处理室，其中至少一个壁部分位于辐射源附近，并且对于所述辐射源的辐射基本上是透明的; 以及至少一个覆盖板，位于基板与位于辐射源附近的处理室的壁部分之间，所述盖板的尺寸被选择为使得其相对于基板完全覆盖处理室的透明壁部分为了防止包含来自所述衬底的金属，金属氧化物或金属氢氧化物如钨，氧化钨或氢氧化钨的材料沉积在或蒸发到处理室的透明壁部分上。

2. 发明授权

US07151060B2 Device and method for thermally treating semiconductor wafers 有权
公开(公告)号：US07151060B2
公开(公告)日：2006-12-19
申请号：US10524871
申请日：2003-07-25
申请人： Georg Roters , Steffen Frigge , Sing Pin Tay , Yao Zhi Hu , Regina Hayn , Jens-Uwe Sachse , Erwin Schoer , Wilhelm Kegel
发明人： Georg Roters , Steffen Frigge , Sing Pin Tay , Yao Zhi Hu , Regina Hayn , Jens-Uwe Sachse , Erwin Schoer , Wilhelm Kegel
IPC分类号： H01L21/324 , H01L21/477 , H01L21/42 , H01L21/26
CPC分类号： H01L21/67115 , H01L21/28247 , H01L21/32105
摘要： A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.

3. 发明授权

US07094637B2 Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates 有权
标题翻译：在钨硅栅极的选择性侧壁氧化期间最小化氧化钨的气相沉积的方法
公开(公告)号：US07094637B2
公开(公告)日：2006-08-22
申请号：US10694593
申请日：2003-10-27
申请人： Olaf Storbeck , Wilhelm Kegel , Jens-Uwe Sachse , Michael Stadtmüller , Regina Hayn , Erwin Schoer , Georg Roters , Steffen Frigge
发明人： Olaf Storbeck , Wilhelm Kegel , Jens-Uwe Sachse , Michael Stadtmüller , Regina Hayn , Erwin Schoer , Georg Roters , Steffen Frigge
IPC分类号： H01L21/337
CPC分类号： H01L21/32105 , H01L21/28061
摘要： During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.
摘要翻译：在包括本身已知的多晶硅层和钨层的栅极结构的选择性氧化期间，通过特殊工艺防止或至少大大降低了氧化钨的气相沉积。栅极结构在氢/水混合物的处理步骤之前和（如果合适的话）之后由含氢非水惰性气体起作用。

4. 发明授权

US07144747B2 Method for thermally treating a substrate that comprises several layers 有权
标题翻译：用于热处理包含数层的衬底的方法
公开(公告)号：US07144747B2
公开(公告)日：2006-12-05
申请号：US10487573
申请日：2002-07-26
申请人： Hin Yiu Chung , Georg Roters
发明人： Hin Yiu Chung , Georg Roters
IPC分类号： H01L21/00
CPC分类号： H01S5/18352 , H01L21/31683 , H01S5/18311
摘要： A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such that, via the following steps, a defined central portion is not oxidized. The substrate is heated in a process chamber to a prescribed treatment temperature. A hydrogen-rich water vapor is introduced into the process chamber for a specified period of time, wherein such introduction is effected prior to, during and/or after the step of heating the substrate to the prescribed temperature. After conclusion of the specified period of time, introduced into the process chamber is one of the group consisting of: dry oxygen, namely pure oxygen in the form of at least one of atomic O, molecular O2 and O3; a mixture of oxygen and an inert gas that does not chemically react with the layers of the substrate; an oxygen-containing compound that contains no water; and an oxygen-rich water vapor.
摘要翻译：提供了一种热处理具有多层的衬底的方法。被覆在相对侧的基底层从其侧边缘朝向其中心被氧化，使得经由以下步骤，限定的中心部分不被氧化。将衬底在处理室中加热到规定的处理温度。将富氢水蒸气引入处理室一段特定的时间，其中这种引入是在将基片加热至规定温度之前，期间和/或之后进行的。在规定的时间段内结束后，引入处理室是由以下组成的组之一：干氧，即原子O，分子O 2 2中至少一个的形式的纯氧和 O 3; 氧和惰性气体的混合物，其不与衬底的层发生化学反应; 不含水的含氧化合物; 和富氧水蒸汽。

5. 发明授权

US08236706B2 Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures 有权
标题翻译：用于在硅上生长薄氧化膜同时最小化对现有结构的影响的方法和装置
公开(公告)号：US08236706B2
公开(公告)日：2012-08-07
申请号：US12334425
申请日：2008-12-12
申请人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
发明人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

6. 发明授权

US5935650A Method of oxidation of semiconductor wafers in a rapid thermal processing (RTP) system 失效
标题翻译：在快速热处理（RTP）系统中半导体晶片的氧化方法
公开(公告)号：US5935650A
公开(公告)日：1999-08-10
申请号：US953590
申请日：1997-10-17
申请人： Wilfried Lerch , Georg Roters , Peter Muenzinger , Roland Mader
发明人： Wilfried Lerch , Georg Roters , Peter Muenzinger , Roland Mader
IPC分类号： H01L21/314 , H01L21/316 , C23C16/00 , H01L21/02
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/31658
摘要： A method of producing a film on the surface of a semiconductor wafer in an RTP system, comprising: a) rapidly processing the wafer at a first temperature T.sub.1 in an atmosphere containing a substantial vapor pressure of a first reactive gas; then b) rapidly processing the wafer at a second temperature T.sub.2 in an atmosphere substantially free of the first reactive gas is described.
摘要翻译：一种在RTP系统中的半导体晶片的表面上制造膜的方法，包括：a）在包含第一反应气体的实质蒸气压的气氛中，以第一温度T1快速处理晶片; 然后b）在基本上不含第一反应气体的气氛中在第二温度T2下快速处理晶片。

7. 发明授权

US07101812B2 Method of forming and/or modifying a dielectric film on a semiconductor surface 有权
标题翻译：在半导体表面上形成和/或修饰电介质膜的方法
公开(公告)号：US07101812B2
公开(公告)日：2006-09-05
申请号：US10386163
申请日：2003-03-10
申请人： Ignaz Eisele , Alexandra Ludsteck , Jörg Schulze , Zsolt Nenyei , Waltraud Dietl , Georg Roters
发明人： Ignaz Eisele , Alexandra Ludsteck , Jörg Schulze , Zsolt Nenyei , Waltraud Dietl , Georg Roters
IPC分类号： H01L21/44
CPC分类号： H01L21/0214 , H01L21/02167 , H01L21/0217 , H01L21/02227 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02255 , H01L21/02312 , H01L21/02326 , H01L21/02337 , H01L21/3144 , H01L21/31662
摘要： A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.
摘要翻译：公开了一种用于在半导体衬底上形成和/或修饰电介质膜的工艺。根据本发明，半导体晶片暴露于含有反应成分的工艺气体中。选择加热半导体晶片的温度和反应性组分的分压，使得在该过程的某个时间，反应组分的扩散通过电介质膜发生到膜/半导体衬底界面。此外，通过电介质膜的半导体原子也发生到膜的外表面的扩散。已经发现本发明的方法非常适合于形成和/或改性非常薄的电介质膜，例如厚度小于8nm的膜。

8. 发明申请

US20100151694A1 METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES 有权
标题翻译：在最小化现有结构影响下生长硅氧化物薄膜的方法和装置
公开(公告)号：US20100151694A1
公开(公告)日：2010-06-17
申请号：US12334425
申请日：2008-12-12
申请人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
发明人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
IPC分类号： H01L21/316 , C23C16/00
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

9. 发明授权

US07144826B2 Method and apparatus for the production of process gas that includes water vapor and hydrogen formed by burning oxygen in a hydrogen-rich environment 有权
标题翻译：用于生产工艺气体的方法和装置，包括通过在富含氢气的环境中燃烧氧而形成的水蒸气和氢
公开(公告)号：US07144826B2
公开(公告)日：2006-12-05
申请号：US10476136
申请日：2002-04-19
申请人： Georg Roters , Roland Mader , Helmut Sommer , Genrih Erlikh , Yehuda Pashut
发明人： Georg Roters , Roland Mader , Helmut Sommer , Genrih Erlikh , Yehuda Pashut
IPC分类号： H01L21/473 , C23C16/00
CPC分类号： F22B1/003 , H01L21/31658
摘要： The aim of the invention is the simple and economical production of a hydrogen-rich process gas from water vapour and hydrogen, whereby the proportion of water vapour to hydrogen may be precisely controllable and reproducible. Said aim is achieved, with a method and device for the production of a process gas for the treatment of substrates, in particular semiconductor substrates, in which the oxygen for formation of a process gas, comprising water vapour and hydrogen, is burnt in a hydrogen-rich environment in a combustion chamber.
摘要翻译：本发明的目的是从水蒸气和氢气中简单而经济地生产富氢工艺气体，从而水蒸汽与氢气的比例可以精确控制和重现。所述目的是通过用于生产用于处理衬底，特别是半导体衬底的工艺气体的方法和装置，其中用于形成包含水蒸气和氢气的工艺气体的氧被燃烧在氢气中在燃烧室中的大气环境。

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