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    • 8. 发明授权
    • Power sag detection and control in ion implanting system
    • 离子注入系统中的功率下垂检测与控制
    • US07067829B2
    • 2006-06-27
    • US10995836
    • 2004-11-23
    • Steven RichardsJulian G. BlakeSteven Campbell
    • Steven RichardsJulian G. BlakeSteven Campbell
    • H01J37/317
    • H01J37/241H01J37/304H01J2237/0203
    • In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.
    • 一方面,本发明提供了一种管理提供给半导体处理装置的功率波动的方法,该方法包括监视提供给该装置的功率,以检测半导体处理会话期间发生功率波动事件。 在检测到功率波动事件时,可以中断半导体处理。 在功率波动事件结束之后,可以测量设备的至少一个操作参数,例如真空处理室中的真空度,并且当测量的操作参数在可接受的范围内时,可以恢复半导体处理。 测量的操作参数可以优选地包括当受到功率波动事件的不利影响时,比其他参数恢复得更慢的参数。
    • 9. 发明申请
    • POWER SAG DETECTION AND CONTROL IN ION IMPLANTING SYSTEM
    • 离子植入系统中的电源检测和控制
    • US20060108544A1
    • 2006-05-25
    • US10995836
    • 2004-11-23
    • Steven RichardsJulian BlakeSteven Campbell
    • Steven RichardsJulian BlakeSteven Campbell
    • H01J37/08
    • H01J37/241H01J37/304H01J2237/0203
    • In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.
    • 一方面,本发明提供了一种管理提供给半导体处理装置的功率波动的方法,该方法包括监视提供给该装置的功率,以检测半导体处理会话期间发生功率波动事件。 在检测到功率波动事件时,可以中断半导体处理。 在功率波动事件结束之后,可以测量设备的至少一个操作参数,例如真空处理室中的真空度,并且当测量的操作参数在可接受的范围内时,可以恢复半导体处理。 测量的操作参数可以优选地包括当受到功率波动事件的不利影响时,比其他参数恢复得更慢的参数。