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1. 发明授权

US07439526B2 Beam neutralization in low-energy high-current ribbon-beam implanters 有权
标题翻译：在低能量大电流带状束注入机中的束中和
公开(公告)号：US07439526B2
公开(公告)日：2008-10-21
申请号：US11312055
申请日：2005-12-20
申请人： Kenneth H. Purser , Norman L. Turner
发明人： Kenneth H. Purser , Norman L. Turner
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/0042 , H01J2237/055 , H01J2237/057
摘要： The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.
摘要翻译：现代半导体集成电路的制造通常需要涉及高电流的低能带电掺杂原子的注入步骤。当使用这种光束时，添加电子或负离子来中和空间电荷的作用对于获得成功往往是至关重要的。没有这个补充，离子束可以“爆炸”，导致强度的损失和光束聚焦的破坏。在本公开中，提出了用于在磁场偏转区域内的带状束的边界内引入和约束中和低能电子和负离子的方法。描述了用于基于电子损耗，等离子体桥连接和二次电子产生的减少来维持中和的装置。作为等离子体引入偏转区域的一部分，新型的低温泵送装置选择性地从等离子体流中除去中性原子。

2. 发明授权

US07365340B2 Resonance method for production of intense low-impurity ion beams of atoms and molecules 有权
标题翻译：用于生成原子和分子强度低杂质离子束的共振方法
公开(公告)号：US07365340B2
公开(公告)日：2008-04-29
申请号：US11185141
申请日：2005-07-20
申请人： Kenneth H. Purser , Albert E. Litherland , Norman L. Turner
发明人： Kenneth H. Purser , Albert E. Litherland , Norman L. Turner
IPC分类号： H01J7/24
CPC分类号： H01J37/08 , H01J37/3171 , H01J49/145 , H01J2237/0815 , H01J2237/31705 , H05H3/02
摘要： The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields. An example having commercial importance is ionization of the decaborane molecule, B10H14 where an almost perfect ionization resonance match occurs between decaborane molecules and arsenic atoms.
摘要翻译：本发明包括一种紧凑且经济的装置，用于产生以前不可能以有用强度预先产生的各种各样的所需正，负分子和原子离子束的强度。此外，本发明提供了与所需离子频繁同时发射的伴随背景离子的显着排除。本发明的基本原理是谐振电离转移，其中利用共振和非共振过程之间的能量差异来增强或减弱特定的电荷变化过程。这种新的源技术与加速器质谱技术相关; 分子离子注入定向中性梁的生成和磁场中离子束中和所需的电子的生产。具有商业重要性的实例是十硼烷分子的电离，其中在十硼烷分子和砷原子之间发生几乎完美的电离谐振匹配的B 10 H 14 N 14。

3. 发明授权

US07301156B2 Controlling the characteristics of implanter ion-beams 有权
标题翻译：控制注入离子束的特性
公开(公告)号：US07301156B2
公开(公告)日：2007-11-27
申请号：US11154085
申请日：2005-06-16
申请人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
发明人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
IPC分类号： H01L21/425
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
摘要翻译：一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。此外，该方法和装置可用于沿着光束线引入四极场。

4. 发明申请

US20070170369A1 Technique for Improving Uniformity of a Ribbon Beam 有权
标题翻译：提高丝带梁均匀性的技术
公开(公告)号：US20070170369A1
公开(公告)日：2007-07-26
申请号：US11537011
申请日：2006-09-29
申请人： Kenneth H. Purser , Atul Gupta
发明人： Kenneth H. Purser , Atul Gupta
IPC分类号： H01J37/153
CPC分类号： H01J37/147 , H01J37/3007 , H01J2237/1501 , H01J2237/152 , H01J2237/30477 , H01J2237/31701
摘要： A technique for improving uniformity of a ribbon beam is disclosed. In one particular exemplary embodiment, an apparatus may comprise a first corrector-bar assembly and a second corrector-bar assembly, wherein the second corrector-bar assembly is located at a predetermined distance from the first corrector-bar assembly. Each of a first plurality of coils in the first corrector-bar assembly may be individually excited to deflect at least one beamlet in the ribbon beam, thereby causing the beamlets to arrive at the second corrector-bar assembly in a desired spatial spread. Each of a second plurality of coils in the second corrector-bar assembly may be individually excited to further deflect one or more beamlets in the ribbon beam, thereby causing the beamlets to exit the second corrector-bar assembly at desired angles.
摘要翻译：公开了一种用于提高带状束的均匀性的技术。在一个特定示例性实施例中，装置可以包括第一校正杆组件和第二校正杆组件，其中第二校正杆组件位于距离第一校正杆组件预定距离处。第一校正棒组件中的第一组多个线圈中的每一个可以被单独地激发以偏转带束束中的至少一个子束，从而使子束以期望的空间扩展到达第二校正器组件。可以单独地激励第二校正棒组件中的第二组多个线圈中的每一个以进一步偏转带状束中的一个或多个子束，从而使子束以期望的角度离开第二校正棒组件。

5. 发明授权

US5438194A Ultra-sensitive molecular identifier 失效
标题翻译：超敏感分子标识符
公开(公告)号：US5438194A
公开(公告)日：1995-08-01
申请号：US99844
申请日：1993-07-30
申请人： Reijer Koudijs , Marcel M. Mulder , Kenneth H. Purser , Frans W. Saris
发明人： Reijer Koudijs , Marcel M. Mulder , Kenneth H. Purser , Frans W. Saris
IPC分类号： G01N27/62 , G01N30/72 , H01J27/02 , H01J49/00 , H01J49/04 , H01J49/26
CPC分类号： H01J27/028 , H01J49/0086 , G01N30/7206 , G01N30/7233
摘要： Samples are directed into a liquid or gas chromatograph, and the output from the liquid or gas chromatograph is directed into the ion source of an accelerator mass spectrometry system so as to provide an ultra-sensitive identifier of molecules in the samples.
摘要翻译：样品被引导到液体或气相色谱仪中，液体或气相色谱仪的输出被引导到加速器质谱系统的离子源中，以便在样品中提供分子的超敏感标识符。

6. 发明授权

US5391870A High-speed precision mass selection system 失效
标题翻译：高速精密质量选择系统
公开(公告)号：US5391870A
公开(公告)日：1995-02-21
申请号：US115878
申请日：1993-09-01
申请人： Kenneth H. Purser
发明人： Kenneth H. Purser
IPC分类号： H01J49/32 , H01S49/26
CPC分类号： H01J49/32 , H01J49/0086
摘要： Compact and economical apparatus for use in accelerator mass spectrometry for mass selection and attenuation of each isotope by a predetermined fraction that is necessary to permit isotope sequencing through the accelerator stage, by a rotating shutter whose attenuation characteristics are defined by its mechanical shape.
摘要翻译：用于加速器质谱的紧凑而经济的装置，用于通过其衰减特性由其机械形状限定的旋转快门，通过预定分数进行质量选择和衰减每个同位素，该预定分数是允许通过加速器阶段同位素排序所必需的。

7. 发明授权

US4973841A Precision ultra-sensitive trace detector for carbon-14 when it is at concentration close to that present in recent organic materials 失效
标题翻译：当浓度接近现有的有机材料浓度时，用于碳-14的精密超灵敏痕量探测器
公开(公告)号：US4973841A
公开(公告)日：1990-11-27
申请号：US474376
申请日：1990-02-02
申请人： Kenneth H. Purser
发明人： Kenneth H. Purser
IPC分类号： B01D59/48 , H01J49/26
CPC分类号： B01D59/48 , H01J49/0086 , H01J49/26 , Y10T436/24
摘要： A method of detecting the amount of C-14 in a sample, comprising the following steps:ionizing the sample to form a negative-ion beam; deflecting said beam in a magnetic field and directing the deflected beam through a first acceptance aperture to remove all negative ions except mass-14 particles; accelerating said mass-14 negative ions to an energy E of the order of 10 MeV by a high voltage electrostatic field; stripping three electrons from a majority of said negative ions to form doubly-charged positive ions; deflecting said doubly-charged positive ions in an electrostatic deflecting field through 180.degree. and directing the deflected beam through a second acceptance aperture to remove particles in other than the 2.sup.+ charge state and particles with an energy other than E; accelerating the remaining particles to an energy of about 3E by said high-voltage electrostatic field; stripping an additional electron from about half of said 3E ions, whereby metastable mass-14 molecules are dissociated; directing the remaining 3E ions through a magnetic sector field which focuses the C-14 ions through a final defining aperture and onto a detector.
摘要翻译：一种检测样品中C-14量的方法，包括以下步骤：离子化样品以形成负离子束; 在所述磁场中偏转所述光束，并且将所述偏转的光束引导通过第一接收孔以除去除了质量-14颗粒之外的所有负离子; 通过高压静电场将所述质量-14负离子加速到10MeV量级的能量E; 从大部分负离子剥离三个电子以形成双重带电的正离子; 将静电偏转场中的所述双重带电的正离子偏转180°，并将偏转的光束引导通过第二接收孔以除了2+电荷状态以外的颗粒和具有除E以外的能量的颗粒; 通过所述高压静电场将剩余的颗粒加速到约3E的能量; 从大约一半的所述3E离子中除去另外的电子，由此亚稳质粒子14分子被解离; 将剩余的3E离子引导通过磁场区域，其将C-14离子聚焦到最终限定的孔并且到达检测器。

8. 发明授权

US06933507B2 Controlling the characteristics of implanter ion-beams 有权
标题翻译：控制注入离子束的特性
公开(公告)号：US06933507B2
公开(公告)日：2005-08-23
申请号：US10619702
申请日：2003-07-15
申请人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
发明人： Kenneth H. Purser , Harald A. Enge , Norman L. Turner
IPC分类号： H01J37/141 , H01J37/08 , H01J37/14 , H01J37/147 , H01J37/315 , H01J37/317 , H01L21/425
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
摘要翻译：一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。此外，该方法和装置可用于沿着光束线引入四极场。

9. 发明授权

US5719403A MeV scanning ions implanter 失效
标题翻译： MeV扫描离子注入机
公开(公告)号：US5719403A
公开(公告)日：1998-02-17
申请号：US804249
申请日：1997-02-21
申请人： Kenneth H. Purser
发明人： Kenneth H. Purser
IPC分类号： G21K5/04 , C23C14/48 , H01J37/317 , H01L21/265 , H05H3/00 , H05H3/02 , H05H5/06 , H05H5/04
CPC分类号： H05H3/00 , H01J37/3171 , H05H3/02
摘要： A method and apparatus for the direct current acceleration and scanning of ions of all species to energies as high as a few million electron volts (MeV). These method and apparatus have particular relevance for the controlled doping of semiconductor materials and flat panel display units. The apparatus employs high velocity neutral beams of dopant atoms to deliver atoms to the high voltage terminal where they are converted to positive ions having a low electric rigidity. This low electric rigidity makes possible a compact charge state analyzer prior to final positive ion acceleration together with compact electrostatic scanning of the ions for individual wafer implantation at MeV energies. This technology makes possible a compact implanter system.
摘要翻译：用于直流加速和扫描所有物质的离子的能量高达几百万电子伏特（MeV）的方法和装置。这些方法和装置与半导体材料和平板显示单元的受控掺杂特别相关。该装置采用掺杂原子的高速中性光束将原子输送到高压端子，在那里它们被转换成具有低电刚性的正离子。这种低电刚性使得在最终正离子加速之前的紧凑的电荷状态分析仪成为可能，并且在MeV能量下用于单独晶片植入的离子的紧密静电扫描成为可能。这种技术使得一个紧凑的注入机系统成为可能。

10. 发明授权

US5693939A MeV neutral beam ion implanter 失效
标题翻译： MeV中性束离子注入机
公开(公告)号：US5693939A
公开(公告)日：1997-12-02
申请号：US675567
申请日：1996-07-03
申请人： Kenneth H. Purser
发明人： Kenneth H. Purser
IPC分类号： G21K5/04 , C23C14/48 , H01J37/317 , H01L21/265 , H05H3/00 , H05H3/02 , H05H5/06
CPC分类号： H05H3/00 , H01J37/3171 , H05H3/02
摘要： This invention relates to a method and apparatus for the direct current acceleration of ions of all species to energies as high as a few million electron volts (MeV). This invention has particular relevance for the controlled doping of semiconductor materials and flat panel display units where MeV doping may be needed for the production of deep wells, isolation layers, the sub-circuit crystal damage that is useful for gettering unwanted impurity atoms and for the developments of etch pits. The apparatus disclosed uses an acceleration procedure that employs high velocity neutral beams of dopant atoms to deliver atoms to the high voltage terminal of a dc. accelerator where they are converted to positive polarity and accelerated in a manner similar to that of a single ended dc accelerator. The disclosed method permits of a compact apparatus that does not require the use of negative ions, as do tandem-based accelerators, or the large power consumption of rf linacs and radio frequency quadrupoles. Neutral injection makes possible a compact implanter geometry that can include electrostatic scanning of the ions for individual wafer implantation. Key Words Integrated circuits, flat panel, implantation, deep wells, tubs, MeV implantation, gettering, latchup, neutral beams, semiconductor doping, ion implantation.
摘要翻译：本发明涉及一种用于将所有物质的离子直接加速到高达几百万电子伏特（MeV）的能量的方法和装置。本发明与半导体材料和平板显示单元的受控掺杂特别相关，其中可能需要MeV掺杂用于生产深阱，隔离层，用于吸收不需要的杂质原子的子电路晶体损伤蚀刻坑的发展。所公开的装置使用加速过程，其使用掺杂剂原子的高速中性束将原子输送到直流的高电压端。加速器，它们被转换为正极性并以类似于单端直流加速器的方式加速。所公开的方法允许不需要使用负离子的紧凑装置，如基于串联的加速器，或者是直线加速器和射频四极杆的大功率消耗。中性注射使得可以实现紧凑的植入器几何形状，其可以包括用于单独晶片植入的离子的静电扫描。关键词集成电路，平板，植入，深井，桶，MeV植入，吸气，闭锁，中性束，半导体掺杂，离子注入。

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