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1. 发明授权

US07670884B2 Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device 有权
标题翻译：具有导电层的基板的制造方法和半导体装置的制造方法
公开(公告)号：US07670884B2
公开(公告)日：2010-03-02
申请号：US12268039
申请日：2008-11-10
申请人： Gen Fujii , Masafumi Morisue , Hironobu Shoji , Junya Maruyama , Kouji Dairiki , Tomoyuki Aoki
发明人： Gen Fujii , Masafumi Morisue , Hironobu Shoji , Junya Maruyama , Kouji Dairiki , Tomoyuki Aoki
IPC分类号： H01L21/00 , H01L21/24 , H01L21/20
CPC分类号： H01L27/12 , H01L23/48 , H01L23/5227 , H01L24/11 , H01L27/0629 , H01L27/1266 , H01L27/1292 , H01L27/13 , H01L28/10 , H01L29/78621 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2924/00014 , H01L2924/07811 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/3011 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
摘要翻译：具有导电层的基板的制造方法具有以下步骤：在基板上形成无机绝缘层; 在无机绝缘层上形成具有所需形状的有机树脂层; 在无机绝缘层的第一暴露部分上相对于含有导电颗粒的组合物形成低润湿性层; 去除有机树脂层; 并用含有导电颗粒的组合物涂覆无机绝缘层的第二暴露部分并进行烘烤，由此形成导电层。

2. 发明授权

US07449372B2 Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device 有权
标题翻译：具有导电层的基板的制造方法和半导体装置的制造方法
公开(公告)号：US07449372B2
公开(公告)日：2008-11-11
申请号：US11295471
申请日：2005-12-07
申请人： Gen Fujii , Masafumi Morisue , Hironobu Shoji , Junya Maruyama , Kouji Dairiki , Tomoyuki Aoki
发明人： Gen Fujii , Masafumi Morisue , Hironobu Shoji , Junya Maruyama , Kouji Dairiki , Tomoyuki Aoki
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , H01L23/48 , H01L23/5227 , H01L24/11 , H01L27/0629 , H01L27/1266 , H01L27/1292 , H01L27/13 , H01L28/10 , H01L29/78621 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2924/00014 , H01L2924/07811 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/3011 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
摘要翻译：具有导电层的基板的制造方法具有以下步骤：在基板上形成无机绝缘层; 在无机绝缘层上形成具有所需形状的有机树脂层; 在无机绝缘层的第一暴露部分上相对于含有导电颗粒的组合物形成低润湿性层; 去除有机树脂层; 并用含有导电颗粒的组合物涂覆无机绝缘层的第二暴露部分并进行烘烤，由此形成导电层。

3. 发明申请

US20060134918A1 Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device 有权
标题翻译：具有导电层的基板的制造方法和半导体装置的制造方法
公开(公告)号：US20060134918A1
公开(公告)日：2006-06-22
申请号：US11295471
申请日：2005-12-07
申请人： Gen Fujii , Masafumi Morisue , Hironobu Shoji , Junya Maruyama , Kouji Dairiki , Tomoyuki Aoki
发明人： Gen Fujii , Masafumi Morisue , Hironobu Shoji , Junya Maruyama , Kouji Dairiki , Tomoyuki Aoki
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L27/12 , H01L23/48 , H01L23/5227 , H01L24/11 , H01L27/0629 , H01L27/1266 , H01L27/1292 , H01L27/13 , H01L28/10 , H01L29/78621 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2924/00014 , H01L2924/07811 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/3011 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer, forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
摘要翻译：具有导电层的基板的制造方法具有以下步骤：在基板上形成无机绝缘层; 在所述无机绝缘层上形成具有所需形状的有机树脂层，在所述无机绝缘层的第一暴露部分上相对于含有导电颗粒的组合物形成低润湿性层; 去除有机树脂层; 并用含有导电颗粒的组合物涂覆无机绝缘层的第二暴露部分并进行烘烤，由此形成导电层。

4. 发明授权

US07476572B2 Method for manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07476572B2
公开(公告)日：2009-01-13
申请号：US10592527
申请日：2005-03-15
申请人： Masafumi Morisue , Gen Fujii
发明人： Masafumi Morisue , Gen Fujii
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L27/12 , H01L27/1292 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2224/16 , H01L2224/48227 , H01L2224/48465 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01029 , H01L2924/01037 , H01L2924/01046 , H01L2924/01055 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/07811 , H01L2924/09701 , H01L2924/10253 , H01L2924/12044 , H01L2924/19041 , H01L2924/3025 , H01L2924/00
摘要： An object of the invention is to provide a method for manufacturing a thin film transistor in a self-aligning manner by using the droplet discharging method regardless of the accuracy of a discharge position for a droplet discharging device. In view of the object, an organic resin film or the like is applied and processed into a predetermined shape by etch-back, exposure, development and the like. By utilizing the organic resin film with the predetermined shape as a mask, a semiconductor layer containing an impurity of one conductivity type is etched. By utilizing the organic resin film with the predetermined shape, regions with different wettabilities are formed.
摘要翻译：本发明的目的是提供一种通过使用液滴排放方法以自对准方式制造薄膜晶体管的方法，而不管液滴排放装置的排出位置的精度如何。鉴于目的，通过回蚀，曝光，显影等将有机树脂膜等施加并加工成预定的形状。通过利用具有预定形状的有机树脂膜作为掩模，蚀刻含有一种导电类型的杂质的半导体层。通过利用具有预定形状的有机树脂膜，形成具有不同润湿性的区域。

5. 发明申请

US20050158665A1 Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television 有权
标题翻译：具有膜图案的基板及其制造方法，半导体装置，液晶电视和EL电视机的制造方法
公开(公告)号：US20050158665A1
公开(公告)日：2005-07-21
申请号：US11025921
申请日：2005-01-03
申请人： Shinji Maekawa , Gen Fujii , Hiroko Shiroguchi , Masafumi Morisue
发明人： Shinji Maekawa , Gen Fujii , Hiroko Shiroguchi , Masafumi Morisue
IPC分类号： H01L21/469 , B05D1/12 , G02B5/20 , G03F7/00 , H01L21/02
CPC分类号： G02B5/201 , G03F7/0007 , H01L27/1285 , H01L27/1292 , H01L27/3281 , H01L27/3295 , H01L29/66757 , H01L29/66765 , H01L51/56
摘要： The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.
摘要翻译：本发明通过简单的步骤提供了具有包括绝缘膜，半导体膜，导电膜等的膜图案的基板的制造方法，以及低成本，高生产率的半导体器件的制造方法，产量。根据本发明，在形成在基材上具有低润湿性的第一保护膜之后，在第一掩模图案的外边缘上施加或排出具有高润湿性的材料，从而形成膜图案和具有膜图案的基板形成。

6. 发明授权

US08293457B2 Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television 有权
标题翻译：具有膜图案的基板及其制造方法，半导体装置，液晶电视和EL电视机的制造方法
公开(公告)号：US08293457B2
公开(公告)日：2012-10-23
申请号：US12537005
申请日：2009-08-06
申请人： Shinji Maekawa , Gen Fujii , Hiroko Shiroguchi , Masafumi Morisue
发明人： Shinji Maekawa , Gen Fujii , Hiroko Shiroguchi , Masafumi Morisue
IPC分类号： G03F7/26
CPC分类号： G02B5/201 , G03F7/0007 , H01L27/1285 , H01L27/1292 , H01L27/3281 , H01L27/3295 , H01L29/66757 , H01L29/66765 , H01L51/56
摘要： The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.
摘要翻译：本发明通过简单的步骤提供了具有包括绝缘膜，半导体膜，导电膜等的膜图案的基板的制造方法，以及低成本，高生产率的半导体器件的制造方法，产量。根据本发明，在形成在基材上具有低润湿性的第一保护膜之后，在第一掩模图案的外边缘上施加或排出具有高润湿性的材料，从而形成膜图案和具有膜图案的基板形成。

7. 发明授权

US07635889B2 Semiconductor device, electronic device, and method of manufacturing semiconductor device 有权
标题翻译：半导体器件，电子器件和半导体器件的制造方法
公开(公告)号：US07635889B2
公开(公告)日：2009-12-22
申请号：US11333701
申请日：2006-01-17
申请人： Toshiyuki Isa , Gen Fujii , Masafumi Morisue , Ikuko Kawamata
发明人： Toshiyuki Isa , Gen Fujii , Masafumi Morisue , Ikuko Kawamata
IPC分类号： H01L23/48
CPC分类号： H01L21/288 , H01L21/02672 , H01L21/76838 , H01L27/12 , H01L27/124 , H01L27/1285 , H01L27/1292 , H01L27/3248 , H01L27/3276 , H01L51/0019 , H01L51/0022 , H01L51/0023 , H01L2924/0002 , Y02P80/30 , H01L2924/00
摘要： Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.
摘要翻译：具有结的导电层相邻地形成，其间具有均匀的距离。导电层的液滴在布线的长度方向上被排出到液滴的错开中心，使得排出的液滴的中心在相邻导电层之间的线宽方向上不在相同的线上。由于液滴的中心是错开的，所以每个具有最宽的线宽（结的最宽的宽度）的导电层的部分彼此不连接，导电层可以以较短的距离相邻地形成。

8. 发明申请

US20060113894A1 Semiconductor device, display device and method for manufacturing thereof, and television device 有权
公开(公告)号：US20060113894A1
公开(公告)日：2006-06-01
申请号：US11271800
申请日：2005-11-14
申请人： Gen Fujii , Masafumi Morisue
发明人： Gen Fujii , Masafumi Morisue
IPC分类号： H05B33/00 , H01J1/62
CPC分类号： H01L29/4908 , H01L27/1292 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： The purpose of the present invention is to provide a semiconductor device or a display device that can be manufactured by improving the use efficiency of a material as well as simplifying the manufacturing process, and a manufacturing technique of those devices. Also, another purpose of the present invention is to provide a technique for forming a pattern of wirings, etc., constituting the semiconductor device or the display device, in a desired shape and with good adhesiveness. The adhesiveness between first and second conductive layers is increased by forming a conductive buffer layer including at least one pore between them. The second conductive layer is formed by filling the pores of the buffer layer including at least one pore with a particle shaped conductive material which is solidified by baking. The conductive layer solidified in the pores functions like a wedge, and the second conductive layer is formed over the first conductive layer with good adhesiveness and stability.

9. 发明申请

US20060040435A1 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20060040435A1
公开(公告)日：2006-02-23
申请号：US11195725
申请日：2005-08-03
申请人： Masafumi Morisue , Gen Fujii
发明人： Masafumi Morisue , Gen Fujii
IPC分类号： H01L21/84
CPC分类号： H01L27/1285 , H01L27/1292
摘要： It is an object of the present invention to provide a method for manufacturing a substrate having film patterns such as an insulating film, a semiconductor film, and a conductive film in simple processes. It is another object of the invention to provide a method for manufacturing a semiconductor device with high throughput and high yield at low cost. A method for manufacturing a semiconductor device including the steps of: forming a first film over a substrate; discharging a solution containing a mask material to the first film thereby forming a mask over the first film; patterning the first film with the use of the mask thereby forming low wettability regions and a high wettability region over the substrate; removing the mask; and discharging a solution containing a material of an insulating film, a semiconductor film, or a conductive film to the high wettability region provided between the low wettability regions thereby forming a pattern of the insulating film, the semiconductor film, or the conductive film.
摘要翻译：本发明的目的是提供一种在简单的工艺中制造具有绝缘膜，半导体膜和导电膜等膜图案的基板的方法。本发明的另一个目的是提供一种以低成本生产高产量和高产率的半导体器件的方法。一种制造半导体器件的方法，包括以下步骤：在衬底上形成第一膜; 将含有掩模材料的溶液排放到第一膜上，从而在第一膜上形成掩模; 通过使用掩模图案化第一膜，从而在衬底上形成低润湿性区域和高润湿性区域; 去除面膜; 并且将包含绝缘膜，半导体膜或导电膜的材料的溶液排出到设置在低润湿性区域之间的高润湿性区域，从而形成绝缘膜，半导体膜或导电膜的图案。

10. 发明授权

US08324018B2 Semiconductor device, electronic device, and method of manufacturing semiconductor device 有权
标题翻译：半导体器件，电子器件和半导体器件的制造方法
公开(公告)号：US08324018B2
公开(公告)日：2012-12-04
申请号：US12641701
申请日：2009-12-18
申请人： Toshiyuki Isa , Gen Fujii , Masafumi Morisue , Ikuko Kawamata
发明人： Toshiyuki Isa , Gen Fujii , Masafumi Morisue , Ikuko Kawamata
IPC分类号： H01L21/00
CPC分类号： H01L21/288 , H01L21/02672 , H01L21/76838 , H01L27/12 , H01L27/124 , H01L27/1285 , H01L27/1292 , H01L27/3248 , H01L27/3276 , H01L51/0019 , H01L51/0022 , H01L51/0023 , H01L2924/0002 , Y02P80/30 , H01L2924/00
摘要： Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.
摘要翻译：具有结的导电层相邻地形成，其间具有均匀的距离。导电层的液滴在布线的长度方向上被排出到液滴的错开中心，使得排出的液滴的中心在相邻导电层之间的线宽方向上不在相同的线上。由于液滴的中心是错开的，所以每个具有最宽的线宽（结的最宽的宽度）的导电层的部分彼此不连接，导电层可以以较短的距离相邻地形成。

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