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1. 发明申请

US20060096707A1 Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge 审中-公开
标题翻译：大气压射频非热等离子体放电中的加工材料
公开(公告)号：US20060096707A1
公开(公告)日：2006-05-11
申请号：US11304257
申请日：2005-12-14
申请人： Gary Selwyn , Ivars Henins , Jaeyoung Park , Hans Herrmann
发明人： Gary Selwyn , Ivars Henins , Jaeyoung Park , Hans Herrmann
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , B08B7/0035 , C23G5/00 , H01J37/32082 , H01J37/32733 , H01L21/31
摘要： Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.
摘要翻译：用于处理材料的装置，包括放置放置在射频电极和接地电极之间的材料，或者其本身是电极之一。这是在大气压力条件下完成的。该设备有效地蚀刻或清洁诸如硅晶片的基底，或提供线轴和滚筒的清洁，并且使用含有惰性气体和化学反应性气体的气体。

2. 发明申请

US20050199340A1 processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge 有权
标题翻译：处理材料在大气压射频非热等离子体放电中
公开(公告)号：US20050199340A1
公开(公告)日：2005-09-15
申请号：US09776086
申请日：2001-02-02
申请人： Gary Selwyn , Ivars Henins , Jaeyoung Park , Hans Herrmann
发明人： Gary Selwyn , Ivars Henins , Jaeyoung Park , Hans Herrmann
IPC分类号： H05H1/24 , B08B7/00 , C23G5/00 , H01J37/32 , H01L21/00 , H01L21/304 , H01L21/3065 , H01L21/31 , C23F1/02
CPC分类号： H01L21/67069 , B08B7/0035 , C23G5/00 , H01J37/32082 , H01J37/32733 , H01L21/31
摘要： Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.
摘要翻译：用于处理材料的装置，包括放置放置在射频电极和接地电极之间的材料，或者其本身是电极之一。这是在大气压力条件下完成的。该设备有效地蚀刻或清洁诸如硅晶片的基底，或提供线轴和滚筒的清洁，并且使用含有惰性气体和化学反应性气体的气体。

3. 发明授权

US06909237B1 Production of stable, non-thermal atmospheric pressure rf capacitive plasmas using gases other than helium or neon 有权
标题翻译：使用氦气或氖气以外的气体生产稳定的非热大气压rf电容等离子体
公开(公告)号：US06909237B1
公开(公告)日：2005-06-21
申请号：US10205786
申请日：2002-07-25
申请人： Jaeyoung Park , Ivars Henins
发明人： Jaeyoung Park , Ivars Henins
IPC分类号： H05H1/24 , H01J7/24
CPC分类号： H05H1/2406 , H05H2001/2412 , H05H2240/10
摘要： The present invention enables the production of stable, steady state, non-thermal atmospheric pressure rf capacitive α-mode plasmas using gases other than helium and neon. In particular, the current invention generates and maintains stable, steady-state, non-thermal atmospheric pressure rf α-mode plasmas using pure argon or argon with reactive gas mixtures, pure oxygen or air. By replacing rare and expensive helium with more readily available gases, this invention makes it more economical to use atmospheric pressure rf α-mode plasmas for various materials processing applications.
摘要翻译：本发明能够使用除氦和氖之外的气体来生产稳定，稳态，非热大气压rf电容式α模式等离子体。特别地，本发明使用具有反应气体混合物，纯氧气或空气的纯氩或氩产生并维持稳定的，稳态的，非热的大气压rfα模式等离子体。通过用更容易获得的气体代替稀有和昂贵的氦气，本发明使得使用大气压rfα模式等离子体用于各种材料处理应用是更经济的。

4. 发明授权

US07025856B2 Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge 有权
公开(公告)号：US07025856B2
公开(公告)日：2006-04-11
申请号：US09776086
申请日：2001-02-02
申请人： Gary S. Selwyn , Ivars Henins , Jaeyoung Park , Hans W. Herrmann
发明人： Gary S. Selwyn , Ivars Henins , Jaeyoung Park , Hans W. Herrmann
IPC分类号： C23F1/00 , H01L21/306 , C23C16/509
CPC分类号： H01L21/67069 , B08B7/0035 , C23G5/00 , H01J37/32082 , H01J37/32733 , H01L21/31
摘要： Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.

5. 发明申请

US20100164358A1 FILTER FOR PLASMA DISPLAY AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：等离子显示过滤器及其制作方法
公开(公告)号：US20100164358A1
公开(公告)日：2010-07-01
申请号：US12641544
申请日：2009-12-18
申请人： Jinyoung Lee , Sungyong Lee , Jaeyoung Park , Jaehyung Kim , Dohyukl Kwon
发明人： Jinyoung Lee , Sungyong Lee , Jaeyoung Park , Jaehyung Kim , Dohyukl Kwon
IPC分类号： H01J1/52 , B05D5/12 , H05K9/00
CPC分类号： H05K9/0096 , H01J11/10 , H01J11/44 , H01J2211/444 , H01J2211/446
摘要： A filter for a plasma display includes an electromagnetic interference shielding mesh formed on a substrate to shield electromagnetic waves and a hard coating layer made of inorganic material formed on the electromagnetic interference shielding mesh. The filter is fabricated so as to provide a reduced thickness of a plasma display, to prevent cracks from being generated on surfaces of the mesh and to reduce manufacturing costs.
摘要翻译：用于等离子体显示器的过滤器包括形成在基板上以屏蔽电磁波的电磁干扰屏蔽网以及形成在电磁干扰屏蔽网上的由无机材料制成的硬涂层。制造过滤器以提供等离子体显示器的减小的厚度，以防止在网的表面上产生裂纹并降低制造成本。

6. 发明申请

US20050274122A1 Spinning cold plasma apparatus and methods relating thereto 有权
标题翻译：旋转冷等离子体装置及其相关方法
公开(公告)号：US20050274122A1
公开(公告)日：2005-12-15
申请号：US11064300
申请日：2005-02-23
申请人： Choongseock Chang , Jemo Kang , Jaeyoung Park
发明人： Choongseock Chang , Jemo Kang , Jaeyoung Park
IPC分类号： A61L2/14 , F25B9/02 , F25B9/04
CPC分类号： F25B9/04 , A61L2/14 , H05H1/46 , H05H2001/3468 , H05H2240/20
摘要： Disclosed herein is an apparatus for generating a spinning cold plasma. A preferred embodiment of the spinning cold plasma apparatus is portable and includes a vortex tube having an inner wall to form a vortex reaction chamber. The vortex tube preferably has a cold gas outlet formed at a first end of the vortex tube and a hot gas outlet formed at a second end of the vortex tube. The vortex tube preferably has a plurality of gas inlet openings formed therein for directing pressurized gas tangentially to the inner wall into the vortex reaction chamber. A preferred embodiment of the portable spinning cold plasma apparatus also includes a valve positioned at least partially within the cold gas outlet and a valve positioned at least partially within the hot gas outlet. The portable device preferably also includes an ionizing device, such as an RF source or microwave source, for transmitting electromagnetic energy into the vortex reaction chamber to ionize pressurized gas therein. Additional apparatus and methods are also disclosed herein.
摘要翻译：本文公开了一种用于产生旋转冷等离子体的装置。旋转冷等离子体装置的优选实施例是便携式的，并且包括具有内壁以形成涡流反应室的涡流管。涡流管优选地具有形成在涡流管的第一端处的冷气出口和形成在涡流管的第二端处的热气体出口。涡流管优选地具有形成在其中的多个气体入口，用于将加压气体切向地引导到内壁进入涡流反应室。便携式旋转冷等离子体装置的优选实施例还包括至少部分地位于冷气出口内的阀和至少部分位于热气出口内的阀。便携式设备优选地还包括用于将电磁能量传输到涡流反应室中以将加压气体电离其中的电离装置，例如RF源或微波源。本文还公开了另外的装置和方法。

7. 发明授权

US08598253B2 Polypropylene carbonate paint composition 有权
标题翻译：聚丙烯碳酸酯漆组成
公开(公告)号：US08598253B2
公开(公告)日：2013-12-03
申请号：US13325774
申请日：2011-12-14
申请人： Seunggweon Hong , Jaeyoung Park , Hyelim Kim , Kwangjin Chung , Myungahn Ok
发明人： Seunggweon Hong , Jaeyoung Park , Hyelim Kim , Kwangjin Chung , Myungahn Ok
IPC分类号： C08J9/32
CPC分类号： C09D169/00 , C08G18/44 , C08K3/34 , C09D175/06
摘要： Provided is a polypropylene carbonate (hereinafter, PPC) paint composition, and more particularly, a pre-coated metal (PCM) paint composition for coil coating, which is mainly applied to cases for home appliances requiring high hardness, such as cases of a refrigerator. The composition can be used to provide a PCM paint, which has very low smoke density at the time of burning and emits remarkably low amounts of combustion gas and poisonous gas due to combustion at the time of firing, as compared with the existing laminate steel plate and a high-gloss film. In addition, the composition exhibits excellent adhesion to metal materials and excellent durability so that it can be usefully used for a PCM print steel plate applied to home appliances.
摘要翻译：本发明提供一种聚丙烯碳酸酯（以下称为PPC）涂料组合物，更具体地说，涉及一种用于线圈涂布的预涂金属（PCM）涂料组合物，其主要应用于需要高硬度的家用电器的情况下，例如冰箱。该组合物可用于提供在燃烧时具有非常低的烟雾密度的PCM涂料，与现有的层压钢板相比，由于燃烧时的燃烧气体和有毒气体的排出量显着降低和高光泽膜。此外，该组合物对金属材料表现出优异的粘附性和优异的耐久性，因此其可用于应用于家用电器的PCM印刷钢板。

8. 发明申请

US20100202580A1 METHOD AND APPARATUS FOR NEUTRON GENERATION USING LIQUID TARGETS 审中-公开
标题翻译：使用液体目标中和生成的方法和装置
公开(公告)号：US20100202580A1
公开(公告)日：2010-08-12
申请号：US12695677
申请日：2010-01-28
申请人： Jaeyoung Park , Glen A. Wurden , Richard A. Nebel
发明人： Jaeyoung Park , Glen A. Wurden , Richard A. Nebel
IPC分类号： G21B1/17
CPC分类号： H05H3/06 , H05H6/00
摘要： An apparatus and method for a beam target fusion neutron generator comprising a closed cycle flow generator having a continuous liquid phase flowing stream liquid target containing hydrogen isotopes where said stream has a continuously refreshed exposed surface and where said liquid target is high vacuum compatible at cryogenic temperatures; and an ion beam generator adapted to produce an ion beam and focused to direct said beam to bombard said flowing stream liquid target. The flowing stream liquid target can be a thin film curtain and said closed cycle flow generator can be a cryogenic liquid handling system having a heat exchanger adapted to maintain said liquid target at cryogenic temperatures and having a collection reservoir position to capture use target material for recycling.
摘要翻译：一种用于束目标聚变中子发生器的装置和方法，包括具有包含氢同位素的连续液相流动液体靶的封闭循环流发生器，其中所述流具有连续刷新的暴露表面，并且其中所述液体靶在低温下具有高真空兼容性 ; 以及离子束发生器，其适于产生离子束并被聚焦以引导所述光束轰击所述流动液体物体。流动液体液体靶可以是薄膜帘幕，并且所述闭合循环流发生器可以是具有热交换器的低温液体处理系统，该热交换器适于将所述液体靶保持在低温温度并且具有收集储存器位置以捕获用于回收的目标材料。

9. 发明申请

US20140263181A1 METHOD AND APPARATUS FOR GENERATING HIGHLY REPETITIVE PULSED PLASMAS 审中-公开
标题翻译：用于产生高度重复脉冲等离子体的方法和装置
公开(公告)号：US20140263181A1
公开(公告)日：2014-09-18
申请号：US13860393
申请日：2013-04-10
申请人： Jaeyoung Park
发明人： Jaeyoung Park
IPC分类号： H05H1/46 , C23F1/08 , C23C16/509
CPC分类号： H05H1/46 , C23C16/0245 , C23C16/452 , C23C16/453 , C23C16/45557 , C23C16/505 , C23C16/515 , H01J37/32082 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01L21/3065 , H05H2001/4667 , H05H2001/4682
摘要： A pulsed radio frequency inductive plasma source and method are provided. The source may generate plasma at gas pressures from 1 torr to 2000 torr. By utilizing high power RF generation from fast solid state switches such as Insulated-Gate Bipolar Transistor (IGBT) combined with the resonance circuit, large inductive voltages can be applied to RF antennas to allow rapid gas breakdown from 1-100 μs. After initial breakdown, the same set of switches or an additional rf pulsed power systems are utilized to deliver large amount of rf power, between 10 kW to 10 MW, to the plasmas during the pulse duration of 10 μs-10 ms. In addition, several methods and apparatus for controlling the pulse power delivery, timing gas and materials supply, constructing reactor and substrate structure, and operating pumping system and plasma activated reactive materials delivery system will be disclosed. When combined with the pulsed plasma generation, these apparatuses and the methods can greatly improve the applicability and the efficacy of the industrial plasma processing.
摘要翻译：提供脉冲射频感应等离子体源和方法。源可以在1托至2000托的气体压力下产生等离子体。通过利用与谐振电路相结合的诸如绝缘栅双极晶体管（IGBT）的快速固态开关的高功率射频产生，可以对RF天线施加大的感应电压，以允许从1-100μs的快速气体击穿。在初始故障之后，在10μs-10 ms的脉冲持续时间期间，使用相同组的开关或附加的rf脉冲功率系统在10 kW至10 MW之间向等离子体提供大量的功率。此外，将公开用于控制脉冲功率输送，正时气体和材料供应，构建反应器和基底结构以及操作泵送系统和等离子体激活反应物质输送系统的几种方法和装置。当与脉冲等离子体产生相结合时，这些装置和方法可以大大提高工业等离子体处理的适用性和有效性。

10. 发明申请

US20160300929A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160300929A1
公开(公告)日：2016-10-13
申请号：US15062742
申请日：2016-03-07
申请人： JINBUM KIM , Jaeyoung Park , Donghun Lee , Jeongho Yoo , Jieon Yoon , Kwan Heum Lee , Choeun Lee , Bonyoung Koo
发明人： JINBUM KIM , Jaeyoung Park , Donghun Lee , Jeongho Yoo , Jieon Yoon , Kwan Heum Lee , Choeun Lee , Bonyoung Koo
IPC分类号： H01L29/66 , H01L29/12 , H01L21/30 , H01L29/423 , H01L29/40 , H01L29/04 , H01L29/417
CPC分类号： H01L29/66636 , H01L21/3003 , H01L29/045 , H01L29/0847 , H01L29/12 , H01L29/165 , H01L29/401 , H01L29/41766 , H01L29/42356 , H01L29/66545 , H01L29/78
摘要： A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.
摘要翻译：如下提供制造半导体器件的方法。在衬底上形成源极/漏极图案。源/漏模式包含硅原子和锗原子。从源极/漏极图案的锗原子中去除至少一个锗原子。

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