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    • 7. 发明授权
    • Capacitor fabrication methods including forming a conductive layer
    • 电容器制造方法包括形成导电层
    • US07217615B1
    • 2007-05-15
    • US09653149
    • 2000-08-31
    • Garo J. DerderianGurtej S. Sandhu
    • Garo J. DerderianGurtej S. Sandhu
    • H01L21/8242
    • H01L28/56H01L21/02178H01L21/02181H01L21/02183H01L21/02189H01L21/02197H01L21/0228H01L21/02304H01L21/28568H01L21/31604H01L28/75H01L28/84
    • A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode and chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer, a chemisorption product of the first and second precursor layers being comprised by a layer of a conductive barrier material. The barrier layer may be sufficiently thick and dense to reduce oxidation of the first electrode by oxygen diffusion from over the barrier layer. An alternative method may include forming a first capacitor electrode over a substrate, the first electrode having an inner surface area per unit area and an outer surface area per unit area that are both greater than an outer surface area per unit area of the substrate. A capacitor dielectric layer and a second capacitor electrode may be formed over the dielectric layer. The method may further include forming rugged polysilicon over the substrate, the first electrode being over the rugged polysilicon. Accordingly, the outer surface area of the first electrode can be at least 30% greater than the outer surface area of the substrate without the first electrode including polysilicon.
    • 电容器制造方法可以包括在第一电极上的氧扩散的原子层沉积导电阻挡层。 一种方法可以包括在第一电极上化学吸附至少一层单层的第一前体层,并化学吸附第一前体层上至少一层单层的第二前体层,第一和第二前体层的化学吸附产物 由导电阻挡材料层组成。 阻挡层可以是足够厚且致密的,以通过从阻挡层上方的氧扩散来减少第一电极的氧化。 替代方法可以包括在衬底上形成第一电容器电极,第一电极具有每单位面积的内表面积和每单位面积的外表面积,其大于衬底每单位面积的外表面积。 可以在电介质层上形成电容器电介质层和第二电容器电极。 该方法还可以包括在衬底上形成坚固的多晶硅,第一电极在坚固的多晶硅之上。 因此,第一电极的外表面积可以比不含第一电极包括多晶硅的衬底的外表面积大至少30%。
    • 8. 发明授权
    • Enhanced surface area capacitor fabrication methods
    • 增强表面积电容器制造方法
    • US07053432B2
    • 2006-05-30
    • US09882534
    • 2001-06-14
    • Garo J. DerderianGurtej S. Sandhu
    • Garo J. DerderianGurtej S. Sandhu
    • H01L27/108
    • H01L21/3162H01L21/02178H01L21/0228H01L28/56H01L28/84H01L28/91
    • A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode. A capacitor dielectric layer may be formed over the first electrode and a second capacitor electrode may be formed over the dielectric layer. The barrier layer may include Al2O3. A capacitor fabrication method may also include forming a first capacitor electrode over a substrate, chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode, and chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer. A chemisorption product of the first and second precursors may be comprised by a layer of an insulative barrier material. The first precursor may include H2O and the second precursor may include trimethyl aluminum.
    • 电容器制造方法可以包括在衬底上形成第一电容器电极,并且将原子层沉积在第一电极上的氧扩散的绝缘阻挡层上。 可以在第一电极上形成电容器电介质层,并且可以在电介质层上形成第二电容器电极。 阻挡层可以包括Al 2 O 3 3。 电容器制造方法还可以包括在衬底上形成第一电容器电极,在第一电极上化学吸附至少一层单层厚度的第一前体层,以及化学吸附第一前体上的至少一层单层的第二前体层 层。 第一和第二前体的化学吸附产物可以由绝缘屏障材料层构成。 第一前体可以包括H 2 O,第二前体可以包括三甲基铝。