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1. 发明授权

US06743727B2 Method of etching high aspect ratio openings 失效
标题翻译：蚀刻高纵横比开口的方法
公开(公告)号：US06743727B2
公开(公告)日：2004-06-01
申请号：US09874109
申请日：2001-06-05
申请人： Gangadhara S. Mathad , Siddhartha Panda , Rajiv M. Ranade
发明人： Gangadhara S. Mathad , Siddhartha Panda , Rajiv M. Ranade
IPC分类号： H01L2100
CPC分类号： H01L21/30655 , H01L21/3065 , H01L21/3081 , H01L21/76224
摘要： A method of etching a deep, high aspect ratio opening in a silicon substrate includes etching the substrate with a first plasma formed using a first gaseous mixture including a bromine containing gas, an oxygen containing gas and a first fluorine containing gas. The etching process with the first gaseous mixture produces a sidewall passivating deposit, which builds up near the opening entrance. To reduce this buildup, and to increase the average etching rate, the sidewall passivating deposit is periodically thinned by forming a second plasma using a mixture containing silane and a second fluorine containing gas. The substrate remains in the same plasma reactor chamber during the entire process and the plasma is continuously maintained during the thinning step. Holes of a depth greater than 40 times the width may be produced using repeated cycles of etching and thinning.
摘要翻译：在硅衬底中蚀刻深，高纵横比开口的方法包括使用包含含溴气体，含氧气体和第一含氟气体的第一气体混合物形成的第一等离子体蚀刻衬底。用第一气体混合物的蚀刻工艺产生侧壁钝化沉积物，其沉积在开口入口附近。为了减少这种积累并且为了提高平均蚀刻速率，通过使用含有硅烷和第二含氟气体的混合物形成第二等离子体来周期性地减薄侧壁钝化沉积物。在整个工艺期间，衬底保持在相同的等离子体反应器室中，并且在稀化步骤期间连续维持等离子体。可以使用重复的蚀刻和变薄循环来产生大于40倍宽度的孔。

2. 发明授权

US06709917B2 Method to increase the etch rate and depth in high aspect ratio structure 失效
标题翻译：在高纵横比结构中增加蚀刻速率和深度的方法
公开(公告)号：US06709917B2
公开(公告)日：2004-03-23
申请号：US10145230
申请日：2002-05-13
申请人： Siddhartha Panda , Rajiv M. Ranade , Gangadhara S. Mathad
发明人： Siddhartha Panda , Rajiv M. Ranade , Gangadhara S. Mathad
IPC分类号： H01L218242
CPC分类号： H01L27/1087 , H01L21/3065
摘要： A method of fabricating a high aspect ratio deep trench in a semiconductor substrate comprising reducing the formation of a passivation film during the etching of the trench by including a first step of contacting the substrate in which the deep trench is to be formed with a fluorine poor or low concentration of a fluorine gas in the plasma of etchant gases for etching the high aspect ratio deep trench, followed by a second step of increasing the concentration of the fluorine containing gas to create a fluorine-rich plasma while lowering the chamber pressure of the reactor and RF power. Preferably, the second step is introduced periodically during the etching of a deep trench in an alternating manner.
摘要翻译：一种在半导体衬底中制造高深宽比深沟槽的方法，包括在蚀刻蚀刻期间减少钝化膜的形成，包括使要形成深沟槽的衬底与氟差的接触的第一步骤或低浓度的蚀刻剂气体等离子体中的氟气，用于蚀刻高纵横比深沟槽，随后是增加含氟气体的浓度以产生富氟等离子体同时降低室内压力的第二步骤电抗器和RF功率。优选地，在以交替方式蚀刻深沟槽期间周期性地引入第二步骤。

3. 发明授权

US07144769B2 Method to achieve increased trench depth, independent of CD as defined by lithography 失效
标题翻译：实现增加沟槽深度的方法，与光刻所定义的CD无关
公开(公告)号：US07144769B2
公开(公告)日：2006-12-05
申请号：US10899758
申请日：2004-07-27
申请人： Kevin K. Chan , Subhash B. Kulkarni , Gangadhara S. Mathad , Rajiv M. Ranade
发明人： Kevin K. Chan , Subhash B. Kulkarni , Gangadhara S. Mathad , Rajiv M. Ranade
IPC分类号： H01L21/8242
CPC分类号： H01L27/1087 , H01L21/3081 , H01L21/76224 , H01L21/76895
摘要： A method of forming at least one deep trench structure having an increased trench depth is provided. The method includes providing at least one deep trench having sidewalls that extend to a common bottom wall in a surface of a substrate. Each deep trench has initial dimensions that are wider than targeted dimensions for the deep trenches. To reduce the initial dimensions to that of the targeted dimensions, an epitaxial silicon film is formed selectively or non-selectively on at least some portions of the sidewalls using a low-temperature ultra-high vacuum epitaxial silicon growth tehnique.
摘要翻译：提供了形成具有增加的沟槽深度的至少一个深沟槽结构的方法。该方法包括提供至少一个具有延伸到衬底表面中的公共底壁的侧壁的深沟槽。每个深沟槽的初始尺寸比深沟槽的目标尺寸宽。为了将初始尺寸减小到目标尺寸的尺寸，使用低温超高真空外延硅生长技术在侧壁的至少一些部分上选择性地或非选择性地形成外延硅膜。

4. 发明授权

US06284666B1 Method of reducing RIE lag for deep trench silicon etching 失效
标题翻译：减少深沟槽硅蚀刻RIE滞后的方法
公开(公告)号：US06284666B1
公开(公告)日：2001-09-04
申请号：US09583963
申请日：2000-05-31
申请人： Munir D. Naeem , Gangadhara S. Mathad , Byeong Yeol Kim , Stephan P. Kudelka , Brian S. Lee , Heon Lee , Elizabeth Morales , Young-Jin Park , Rajiv M. Ranade
发明人： Munir D. Naeem , Gangadhara S. Mathad , Byeong Yeol Kim , Stephan P. Kudelka , Brian S. Lee , Heon Lee , Elizabeth Morales , Young-Jin Park , Rajiv M. Ranade
IPC分类号： H01L21302
CPC分类号： H01L21/3081 , H01L21/3065
摘要： A method of minimizing RIE lag (i.e., the neutral and ion fluxes at the bottom of a deep trench (DT) created during the construction of the trench opening using a side wall film deposition)) in DRAMs having a large aspect ratio (i.e.,
摘要翻译：最小化RIE滞后的方法（即，在使用侧壁膜沉积的沟槽开口的构造期间产生的深沟槽（DT）的底部处的中性和离子通量））具有大纵横比的DRAM（即， <30：1）。该方法形成钝化膜，以防止基板的各向同性蚀刻所必需的程度，从而将所需的轮廓和DT的形状保持在基板内。所述的RIE工艺提供了蚀刻到衬底中以实现预定深度的部分DT。允许钝化膜生长到一定厚度，仍然低于其将关闭深沟槽的开口的程度。或者，通过非RIE蚀刻工艺去除钝化膜。可以用诸如氢氟酸（缓冲或非缓冲）的化学品或者使用蒸气相和/或非电离化学物质如无水氢氟酸来湿法蚀刻除去膜的非RIE工艺。膜的受控厚度允许实现高纵横比结构的预定DT深度。

5. 发明授权

US06821864B2 Method to achieve increased trench depth, independent of CD as defined by lithography 失效
标题翻译：实现增加沟槽深度的方法，与光刻所定义的CD无关
公开(公告)号：US06821864B2
公开(公告)日：2004-11-23
申请号：US10093789
申请日：2002-03-07
申请人： Kevin K. Chan , Subhash B. Kulkarni , Gangadhara S. Mathad , Rajiv M. Ranade
发明人： Kevin K. Chan , Subhash B. Kulkarni , Gangadhara S. Mathad , Rajiv M. Ranade
IPC分类号： H01L2176
CPC分类号： H01L27/1087 , H01L21/3081 , H01L21/76224 , H01L21/76895
摘要： A method of forming at least one deep trench structure having an increased trench depth is provided. The method includes providing at least one deep trench having sidewalls that extend to a common bottom wall in a surface of a substrate. Each deep trench has initial dimensions that are wider than targeted dimensions for the deep trenches. To reduce the initial dimensions to that of the targeted dimensions, an epitaxial silicon film is formed selectively or non-selectively on at least some portions of the sidewalls using a low-temperature ultra-high vacuum epitaxial silicon growth tehnique.
摘要翻译：提供了形成具有增加的沟槽深度的至少一个深沟槽结构的方法。该方法包括提供至少一个具有延伸到衬底表面中的公共底壁的侧壁的深沟槽。每个深沟槽的初始尺寸比深沟槽的目标尺寸宽。为了将初始尺寸减小到目标尺寸的尺寸，使用低温超高真空外延硅生长技术在侧壁的至少一些部分上选择性地或非选择性地形成外延硅膜。

6. 发明授权

US06687014B2 Method for monitoring the rate of etching of a semiconductor 有权
标题翻译：监测半导体蚀刻速率的方法
公开(公告)号：US06687014B2
公开(公告)日：2004-02-03
申请号：US10050737
申请日：2002-01-16
申请人： Shoaib Hasan Zaidi , Gangadhara S. Mathad
发明人： Shoaib Hasan Zaidi , Gangadhara S. Mathad
IPC分类号： G01B902
CPC分类号： G01B11/0683 , G01B11/0675
摘要： A method of measuring the rate of etching of trenches on a substrate using interferometry is provided. The method comprises transmitting onto the substrate incident electromagnetic radiation having a wavelength above the wavelength at which the trenches act as waveguides for the radiation; collecting reflected electromagnetic radiation from the substrate; detecting a repetitive pattern of maximum intensities and minimum intensities of the reflected electromagnetic radiation during the etching; and determining the rate of etching based upon the wavelength of the incident electromagnetic radiation and the time period of the pattern.
摘要翻译：提供了使用干涉测量法测量衬底上的沟槽的蚀刻速率的方法。所述方法包括将具有波长高于波导的波长的入射电磁辐射传输到所述基底上，所述波长在所述波长处作为所述辐射的波导; 收集来自基板的反射电磁辐射; 在蚀刻期间检测反射电磁辐射的最大强度和最小强度的重复图案; 以及基于入射的电磁辐射的波长和图案的时间周期来确定蚀刻速率。

7. 发明授权

US4671849A Method for control of etch profile 失效
标题翻译：控制蚀刻轮廓的方法
公开(公告)号：US4671849A
公开(公告)日：1987-06-09
申请号：US730976
申请日：1985-05-06
申请人： Lee Chen , Gangadhara S. Mathad
发明人： Lee Chen , Gangadhara S. Mathad
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/308 , C23F1/02
CPC分类号： H01L21/31116
摘要： A method for precisely controlling the profile of an opening etched in a layer of material, for example, an insulating layer. In one embodiment, wherein a silicon dioxide layer is reactive ion etched through a photoresist mask, the concentration of a reactive species in an etchant gas is changed during the etching process to change the slope of the opening, the upper sidewall portion of the opening having a shallow slope and the lower sidewall portion of the opening having a steep slope. The final slope of the opening formed by this method is independent of the initial slopes of the images developed in the photoresist mask.
摘要翻译：一种用于精确地控制蚀刻在材料层（例如绝缘层）中的开口的轮廓的方法。在一个实施方案中，其中二氧化硅层是通过光致抗蚀剂掩模进行反应离子蚀刻，蚀刻剂气体中的反应性物质的浓度在蚀刻过程中改变以改变开口的斜率，开口的上侧壁部分具有开口的浅斜面和下侧壁部分具有陡峭的斜坡。通过该方法形成的开口的最终斜率与在光致抗蚀剂掩模中显影的图像的初始斜率无关。

8. 发明授权

US06809005B2 Method to fill deep trench structures with void-free polysilicon or silicon 失效
标题翻译：用无孔多晶硅或硅填充深沟槽结构的方法
公开(公告)号：US06809005B2
公开(公告)日：2004-10-26
申请号：US10386880
申请日：2003-03-12
申请人： Rajiv Ranade , Gangadhara S. Mathad , Kevin K. Chan , Subhash B. Kulkarni
发明人： Rajiv Ranade , Gangadhara S. Mathad , Kevin K. Chan , Subhash B. Kulkarni
IPC分类号： H01L2176
CPC分类号： H01L27/1087 , H01L21/0237 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/763 , H01L29/66181
摘要： The present invention provides methods of producing trench structures having substantially void-free filler material therein. The fillers may be grown from a liner material such as polysilicon formed along the sidewalls of the trench. Previously formed voids may be healed by exposing the voids and growing epitaxial silicon.
摘要翻译：本发明提供了在其中制造基本上无空隙填料的沟槽结构的方法。填料可以从诸如沿沟槽的侧壁形成的多晶硅的衬垫材料生长。先前形成的空隙可以通过暴露空隙和生长外延硅来治愈。

9. 发明授权

US4534816A Single wafer plasma etch reactor 失效
标题翻译：单晶片等离子体蚀刻反应器
公开(公告)号：US4534816A
公开(公告)日：1985-08-13
申请号：US623670
申请日：1984-06-22
申请人： Lee Chen , Charles J. Hendricks , Gangadhara S. Mathad , Stanley J. Poloncic
发明人： Lee Chen , Charles J. Hendricks , Gangadhara S. Mathad , Stanley J. Poloncic
IPC分类号： H01L21/302 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32532 , H01J37/32623
摘要： A high pressure, high etch rate single wafer plasma reactor having a fluid cooled upper electrode including a plurality of small diameter holes or passages therethrough to provide uniform reactive gas distribution over the surface of a wafer to be etched. A fluid cooled lower electrode is spaced from the upper electrode to provide an aspect ratio (wafer diameter: spacing) greater than about 25, and includes an insulating ring at its upper surface. The insulating ring protrudes above the exposed surface of the lower electrode to control the electrode spacing and to provide a plasma confinement region whereby substantially all of the RF power is dissipated by the wafer. A plurality of spaced apart, radially extending passages through the insulating ring provide a means of uniformly exhausting the reactive gas from the plasma confinement region. Affixed to the upper electrode is a first housing which supplies reactive gas and cooling fluid, and a baffle affixed to the first housing intermediate the upper electrode and a gas inlet forms a plenum above the upper electrode and ensures uniform reactive gas distribution thereover. The first housing and upper electrode are contained within a second housing with an insulating housing therebetween. The upper and lower electrodes are electrically isolated from each other and from ground, so that either or both electrodes may be powered.
摘要翻译：高压，高蚀刻速率的单晶片等离子体反应器，其具有流体冷却的上部电极，其包括多个小直径孔或穿过其中的通道，以在要蚀刻的晶片的表面上提供均匀的反应气体分布。流体冷却的下电极与上电极隔开以提供大于约25的纵横比（晶片直径：间距），并且在其上表面包括绝缘环。绝缘环突出在下电极的暴露表面之上，以控制电极间距并提供等离子体约束区域，从而基本上所有的RF功率都被晶片消散。通过绝缘环的多个间隔开的径向延伸通道提供均匀排出来自等离子体限制区域的反应气体的装置。与上电极相连的是提供反应性气体和冷却流体的第一壳体，以及固定在上电极之间的第一壳体的挡板和气体入口在上电极上形成集气室，并确保其上的均匀的反应气体分布。第一壳体和上电极容纳在第二壳体中，其间具有绝缘壳体。上电极和下电极彼此电隔离并且与地电隔离，使得电极或电极都可以被供电。

10. 发明授权

US4490211A Laser induced chemical etching of metals with excimer lasers 失效
标题翻译：激光诱导化学蚀刻金属与准分子激光器
公开(公告)号：US4490211A
公开(公告)日：1984-12-25
申请号：US573452
申请日：1984-01-24
申请人： Lee Chen , John R. Lankard , Gangadhara S. Mathad
发明人： Lee Chen , John R. Lankard , Gangadhara S. Mathad
IPC分类号： C23F4/00 , C23F4/02 , C23F4/04 , H01L21/302 , H05K3/02 , C23F1/02 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： C23F4/02 , H05K3/027
摘要： Disclosed is a method of etching a metallized substrate by excimer laser radiation. The substrate is exposed to a selected gas, e.g., a halogen gas, which spontaneously reacts with the metal forming a solid reaction product layer on the metal by a partial consumption of the metal. A beam of radiation from an excimer laser, e.g. XeF laser operating at a wavelength of 351 nm or XeCl laser at 308 nm or KrF laser at 248 nm or KrCl laser at 222 nm or ArF laser at 193 nm or F.sub.2 laser at 157 nm, is applied to the reaction product in a desired pattern to vaporize the reaction product and thereby selectively etch the metal with a high resolution.
摘要翻译：公开了一种通过准分子激光辐射蚀刻金属化衬底的方法。将衬底暴露于选定的气体，例如卤素气体，其通过部分消耗金属与金属自发地与金属反应形成固体反应产物层。来自准分子激光的辐射束，例如，波长351nm的XeF激光或248nm的KrF激光或222nm的KrCl激光或193nm的ArF激光或157nm的F2激光的XeF激光以期望的图案施加到反应产物以蒸发反应产物，从而以高分辨率选择性地蚀刻金属。

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