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1. 发明申请

US20060019031A1 Deposition repeatability of PECVD films 有权
标题翻译： PECVD膜的沉积重复性
公开(公告)号：US20060019031A1
公开(公告)日：2006-01-26
申请号：US10898472
申请日：2004-07-23
申请人： Gaku Furuta , Tae Won , John White
发明人： Gaku Furuta , Tae Won , John White
IPC分类号： C23C16/00
CPC分类号： C23C16/0209 , C23C16/5096
摘要： We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.
摘要翻译：当在沉积室中顺序地处理多个基板时，我们具有提高膜的化学气相沉积（CVD）的沉积速率均匀性的方法。该方法包括当衬底存在于沉积室中时，围绕衬底的处理体积内的至少一个处理体积结构的等离子体预热。我们还有一种装置控制的方法，其可以在沉积室中顺次地串联处理多个基板的开始时调整几个基板的沉积时间，使得沉积膜厚度在处理期间保持基本恒定系列底物。将这些方法组合成单一方法提供了从基材到底物控制平均膜厚度方面的最佳总体结果。

2. 发明申请

US20050233595A1 Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors 有权
标题翻译：通过控制成膜前体来控制氮化硅膜的性能和均匀性
公开(公告)号：US20050233595A1
公开(公告)日：2005-10-20
申请号：US10829016
申请日：2004-04-20
申请人： Soo Choi , Tae Won , Gaku Furuta , Qunhua Wang , John White , Beom Park
发明人： Soo Choi , Tae Won , Gaku Furuta , Qunhua Wang , John White , Beom Park
IPC分类号： C23C16/34 , H01L21/318 , H01L21/336 , H01L21/469 , H01L29/49 , H01L29/786
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L29/4908 , H01L29/66765 , H01L29/78669
摘要： We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, which may be in the range of about 4.1 m2, and even as large as 9 m2. The a-SiNx:H films provide a uniformity of film thickness and uniformity of film properties, including chemical composition, which are necessary over such large substrate surface areas. The films produced by the method are useful for both liquid crystal active matrix displays and for organic light emitting diode control.
摘要翻译：我们已经开发了一种PECVD沉积a-SiN＆lt; x＆gt;：H膜的方法，其可用于TFT器件作为栅极电介质和钝化层，当一系列TFT器件排列在具有表面的衬底上时大于约1m 2的区域，其可以在约4.1m 2范围内，甚至大至9m 2/2。 a-SiN＆lt; x＆gt;：H膜提供了膜厚度的均匀性和膜特性的均匀性，包括在这种大的基材表面区域上必需的化学成分。通过该方法生产的膜对于液晶有源矩阵显示器和有机发光二极管控制是有用的。

3. 发明申请

US20060134496A1 Fuel cell conditioning layer 有权
标题翻译：燃料电池调理层
公开(公告)号：US20060134496A1
公开(公告)日：2006-06-22
申请号：US11292225
申请日：2005-11-30
申请人： Tae Won , Robert Bachrach , John White , Wendall Blonigan
发明人： Tae Won , Robert Bachrach , John White , Wendall Blonigan
IPC分类号： H01M8/02 , B05D5/12 , C23C16/00
CPC分类号： C23C16/24 , C23C16/345 , H01M8/0213 , H01M8/0215 , H01M8/0226 , H01M8/0228
摘要： A method and apparatus for depositing a material layer to treat and condition a substrate, such as a fuel cell part, is described. The method includes depositing a hydrophilic material layer on a portion of the surface of the substrate in a process chamber from a mixture of precursors of the hydrophilic material layer. In addition, the method includes reducing a fluid contact angle of the substrate surface. The hydrophilic material layer comprises a wet etch rate of less than about 0.03 Å/min in the presence of about 10 ppm of hydrofluoric acid in water. The material layer can be used to condition various parts of a fuel cell useful in applications to generate electricity.
摘要翻译：描述了用于沉积材料层以处理和调节诸如燃料电池部件的基板的方法和装置。该方法包括在亲水材料层的前体的混合物的处理室中的基底表面的一部分上沉积亲水材料层。此外，该方法包括降低衬底表面的流体接触角。在大约10ppm氢氟酸存在下，亲水性材料层包括小于约0.03 /分钟的湿蚀刻速率。材料层可用于调节用于发电的燃料电池的各种部件。

4. 发明申请

US20060236934A1 Plasma uniformity control by gas diffuser hole design 审中-公开
公开(公告)号：US20060236934A1
公开(公告)日：2006-10-26
申请号：US11473661
申请日：2006-06-22
申请人： Soo Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
发明人： Soo Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

5. 发明申请

US20070102283A1 PVD method to condition a substrate surface 审中-公开
标题翻译： PVD方法来调节基材表面
公开(公告)号：US20070102283A1
公开(公告)日：2007-05-10
申请号：US11271660
申请日：2005-11-10
申请人： Tae Won , Robert Bachrach , John White , Wendell Blonigan
发明人： Tae Won , Robert Bachrach , John White , Wendell Blonigan
IPC分类号： C23C14/00
CPC分类号： C23C14/12 , C23C14/0036 , C23C14/021 , C23C14/022 , C23C14/0641
摘要： A method for conditioning a surface of a substrate, particularly substrates useful in a fuel cell, is disclosed. In one aspect, a method is disclosed for treating a substrate to increase the substrate's resistance to acid etching. The method includes depositing a layer of etch-resistant material via a PVD process onto a surface of the substrate. The substrate may comprise a carbon composite material or a conductive polymer, among others. In one aspect, the layer of etch-resistant material is about 1000 Å thick or less. In another aspect, the layer of etch-resistant material is a TiN layer. In another embodiment, a method is provided for treating a surface of a substrate decrease the substrate's liquid contact angle. The method includes depositing a layer of hydrophilic material via a PVD process onto a surface of the substrate. In one aspect, the deposited material may be a low resistivity material.
摘要翻译：公开了一种用于调节基板的表面，特别是可用于燃料电池的基板的方法。在一个方面，公开了一种用于处理基底以增加基底对酸蚀刻的抵抗力的方法。该方法包括通过PVD工艺将一层耐蚀刻材料沉积到衬底的表面上。基底可以包括碳复合材料或导电聚合物等。在一个方面，耐蚀刻材料层的厚度大约为1000埃或更小。另一方面，耐蚀刻材料层是TiN层。在另一个实施方案中，提供了一种用于处理衬底表面的方法，降低了衬底的液体接触角。该方法包括通过PVD工艺将一层亲水材料沉积到基底的表面上。在一个方面，沉积材料可以是低电阻率材料。

6. 发明申请

US20050251990A1 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US20050251990A1
公开(公告)日：2005-11-17
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
发明人： Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
IPC分类号： H01L21/02 , C23C16/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/505 , C23C16/509 , C23F1/00 , H01J37/32 , H01L21/205
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

7. 发明申请

US20060019502A1 Method of controlling the film properties of a CVD-deposited silicon nitride film 审中-公开
标题翻译：控制CVD沉积氮化硅膜的膜特性的方法
公开(公告)号：US20060019502A1
公开(公告)日：2006-01-26
申请号：US10897775
申请日：2004-07-23
申请人： Beom Park , Soo Choi , Tae Won , John White
发明人： Beom Park , Soo Choi , Tae Won , John White
IPC分类号： H01L21/469 , C23C16/00
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/5096 , H01L21/02208 , H01L21/02274 , H01L21/3185 , H01L29/4908 , H01L29/66765
摘要： We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.
摘要翻译：我们已经发现，向包含SiH 4 N，NH 3和N 2的前体气体组合物中加入H 2 N 2，在通过PECVD沉积在衬底上的a-SiN x H：H膜的衬底表面上改善湿蚀刻速率和湿蚀刻速率均匀性是有效的。湿蚀刻速率是膜密度的指示。通常，湿蚀刻速率越低，膜越致密。向SiH 4 N 3 / NH 3 / N 2 N前体气体组合物中加入H 2 O没有显着增加衬底表面沉积膜厚度的变化。本文所述的a-SiN x X：H膜在制造平板显示器时特别适用于TFT栅极电介质。跨过衬底的膜的均匀性使得能够生产具有25,000cm 2以上的表面积的平板显示器。

8. 发明申请

US20050233092A1 Method of controlling the uniformity of PECVD-deposited thin films 审中-公开
标题翻译：控制PECVD沉积薄膜均匀性的方法
公开(公告)号：US20050233092A1
公开(公告)日：2005-10-20
申请号：US10962936
申请日：2004-10-12
申请人： Soo Choi , Tae Won , John White
发明人： Soo Choi , Tae Won , John White
IPC分类号： C23C16/34 , H01L21/318 , C23C16/00
CPC分类号： H01L21/02274 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/3185
摘要： We have discovered that controlling a combination of PECVD deposition process parameters during deposition of silicon-containing thin film provides improved control over surface standing wave effects. By minimizing surface standing wave effects, the uniformity of film properties (particularly film thickness) across a substrate surface onto which the films have been deposited is improved. The process parameters which have the greatest effect on surface standing wave effects include: the spacing between the upper and lower electrodes in the plasma reactor; the RF frequency of the plasma source; the amount RF power to the plasma source; the process chamber pressure; the relative concentrations of the various components in the precursor gas composition; and the precursor gas overall flow rate relative to the substrate processing volume.
摘要翻译：我们已经发现，在沉积含硅薄膜期间控制PECVD沉积工艺参数的组合提供了改进的对表面驻波效应的控制。通过最小化表面驻波效应，改善了其上沉积有薄膜的基板表面上的膜性质（特别是膜厚度）的均匀性。对表面驻波效应影响最大的工艺参数包括：等离子体反应器中上下电极之间的间距; 等离子体源的RF频率; 对等离子体源的RF功率的量; 处理室压力; 前体气体组成中各种组分的相对浓度; 和前体气体相对于基底处理体积的总流速。

9. 发明申请

US20050287688A1 Water-barrier performance of an encapsulating film 有权
标题翻译：封装膜的防水性能
公开(公告)号：US20050287688A1
公开(公告)日：2005-12-29
申请号：US11133130
申请日：2005-05-18
申请人： Tae Won , Sanjay Yadav
发明人： Tae Won , Sanjay Yadav
IPC分类号： C23C8/36 , C23C16/34 , H01L21/00
CPC分类号： C23C16/345 , C23C8/36
摘要： A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The material layer can be used as an encapsulating layer for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. In one aspect, the encapsulating layer includes one or more material layers (multilayer) having one or more barrier layer materials and one or more low-dielectric constant materials. The encapsulating layer thus deposited provides reduced surface roughness, improved water-barrier performance, reduce thermal stress, good step coverage, and can be applied to many substrate types and many substrate sizes. Accordingly, the encapsulating layer thus deposited provides good device lifetime for various display devices, such as OLED devices. In another aspect, a method of depositing an amorphous carbon material on a substrate at low temperature is provided. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.
摘要翻译：描述了将材料层沉积到基底上的方法和装置。该方法包括将用于材料层的前体的混合物输送到处理室中，并在低温下将材料层沉积在基底上。材料层可以用作需要低温沉积工艺的各种显示应用的封装层，这是由于使用的下层材料的热不稳定性。在一个方面，封装层包括具有一个或多个阻挡层材料和一种或多种低介电常数材料的一种或多种材料层（多层）。由此沉积的封装层提供降低的表面粗糙度，改善的防水性能，降低热应力，良好的阶梯覆盖，并且可以应用于许多基板类型和许多基板尺寸。因此，如此沉积的封装层为诸如OLED器件的各种显示器件提供了良好的器件寿命。另一方面，提供了一种在低温下在基板上沉积无定形碳材料的方法。无定形碳材料可用于降低热应力并防止沉积的薄膜从基底上剥离。

10. 发明申请

US20050238816A1 Method and apparatus of depositing low temperature inorganic films on plastic substrates 审中-公开
标题翻译：在塑料基材上沉积低温无机膜的方法和设备
公开(公告)号：US20050238816A1
公开(公告)日：2005-10-27
申请号：US10831407
申请日：2004-04-23
申请人： Li Hou , Tae Won
发明人： Li Hou , Tae Won
IPC分类号： C23C16/02 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/505 , H01L51/52 , H05H1/24
CPC分类号： C23C16/0245 , C23C16/02 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/505 , H01L51/5253
摘要： A method and apparatus for depositing a low temperature inorganic film onto large area plastic substrates are described in this invention. Low temperature (
摘要翻译：本发明描述了一种将低温无机膜沉积到大面积塑料基底上的方法和装置。低温（<80°C）的无机膜不能很好地粘附在塑料基材上。因此，加入低温（<80℃）等离子体预处理以提高粘合性能。具有等离子体预处理的无机膜显示出良好的附着力和密封性。

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