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    • 6. 发明授权
    • Photosensitive resin composition and method for forming fine patterns
with said composition
    • 光敏树脂组合物和用所述组合物形成精细图案的方法
    • US4554237A
    • 1985-11-19
    • US452198
    • 1982-12-22
    • Fumio KataokaFusaji ShojiHitoshi YokonoDaisuke MakinoShigeru KoibuchiAsao Isobe
    • Fumio KataokaFusaji ShojiHitoshi YokonoDaisuke MakinoShigeru KoibuchiAsao Isobe
    • G03C1/72G03F7/008G03C1/52G03C1/60G03C5/16
    • G03F7/008Y10S430/128
    • Disclosed are photosensitive resin composition useful for formation of fine patterns on semiconductor devices, magnetic bubble devices, etc. which is highly sensitive and is excellent in developability and which has no problem such as precipitation of azide compounds and remaining azide particles after development and a method for forming fine patterns with said composition.Said photosensitive resin composition comprises (a) at least one polymer compound selected from the group consisting of a novolak resin and a polyhydroxystyrene resin and (b) an azide compound represented by the general formula (1): ##STR1## [wherein X is --N.sub.3 or --SO.sub.2 N.sub.3, Y is ##STR2## R.sup.1 is a lower alkylene such as --CH.sub.2 CH.sub.2 --, --CH.sub.2 CH.sub.2 CH.sub.2 --, or --CH.sub.2 CH.sub.2 OCH.sub.2 CH.sub.2 CH.sub.2 --, a hydroxyalkylene or an aminoalkylene such as ##STR3## (wherein R.sup.4 and R.sup.5 are lower alkyl or hydrogen, R.sup.6 -R.sup.8 are lower alkyl groups, R.sup.3 is hydrogen, a lower alkyl group or --CH.sub.2 CH.sub.2 O).sub.n R.sup.9 wherein n is an integer of 3 or less and R.sup.9 is hydrogen or a lower alkyl group)].
    • 公开了用于在半导体器件上形成精细图案的光敏树脂组合物,具有高度敏感性和显影性优异的并且没有问题,例如显影后的叠氮化合物和剩余的叠氮化物颗粒的沉淀,以及方法 用于用所述组合物形成精细图案。 所述光敏树脂组合物包含(a)至少一种选自酚醛清漆树脂和聚羟基苯乙烯树脂的聚合物化合物和(b)由通式(1)表示的叠氮化合物:其中 X是-N3或-SO2N3,Y是低级亚烷基,例如-CH2CH2-,-CH2CH2CH2-或-CH2CH2OCH2CH2CH2-,羟基亚烷基或氨基亚烷基,例如