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1. 发明授权

US08459957B2 Water-injected compressor 有权
标题翻译：注水压缩机
公开(公告)号：US08459957B2
公开(公告)日：2013-06-11
申请号：US11844053
申请日：2007-08-23
申请人： Fumio Takeda , Hitoshi Nishimura , Natsuki Kawabata , Masakazu Aoki
发明人： Fumio Takeda , Hitoshi Nishimura , Natsuki Kawabata , Masakazu Aoki
IPC分类号： F04B49/00
CPC分类号： F04B39/062 , F04C18/16 , F04C29/0014 , F04C29/021 , F04C29/026 , F04C2210/62 , F04C2280/02
摘要： A water-injected compressor, which injects the water inside the separator 3 into the compressor and discharges the water along with compressed air into the separator and then gains condensed and separated water, has the compressor stopping and then, if staying at a stop for a predetermined duration of time without activating, becoming activated and operating for a set duration of time.
摘要翻译：注水压缩机将分离器3内的水注入压缩机，并将水与压缩空气一起排放到分离器中，然后获得冷凝和分离的水，使压缩机停止，然后如果停留在预定的持续时间，而不激活，变得激活并在一定时间内运行。

2. 发明申请

US20080089795A1 Water-Injected Compressor 有权
标题翻译：注水压缩机
公开(公告)号：US20080089795A1
公开(公告)日：2008-04-17
申请号：US11844053
申请日：2007-08-23
申请人： Fumio Takeda , Hitoshi Nishimura , Natsuki Kawabata , Masakazu Aoki
发明人： Fumio Takeda , Hitoshi Nishimura , Natsuki Kawabata , Masakazu Aoki
IPC分类号： F04B39/06
CPC分类号： F04B39/062 , F04C18/16 , F04C29/0014 , F04C29/021 , F04C29/026 , F04C2210/62 , F04C2280/02
摘要： A water-injected compressor, which injects the water inside the separator 3 into the compressor and discharges the water along with compressed air into the separator and then gains condensed and separated water, has the compressor stopping and then, if staying at a stop for a predetermined duration of time without activating, becoming activated and operating for a set duration of time.
摘要翻译：注水压缩机将分离器3内的水注入压缩机，并将水与压缩空气一起排放到分离器中，然后获得冷凝和分离的水，使压缩机停止，然后如果停留在预定的持续时间，而不激活，变得激活并在一定时间内运行。

3. 发明授权

US08672647B2 Water injected scroll air compressor 有权
标题翻译：注水涡旋空压机
公开(公告)号：US08672647B2
公开(公告)日：2014-03-18
申请号：US13024123
申请日：2011-02-09
申请人： Natsuki Kawabata , Kazuaki Shiinoki , Hirotaka Kameya , Masakazu Aoki
发明人： Natsuki Kawabata , Kazuaki Shiinoki , Hirotaka Kameya , Masakazu Aoki
IPC分类号： F01C1/02
CPC分类号： F04C18/0215 , F04C18/0223 , F04C18/0253 , F04C28/06 , F04C28/08 , F04C28/24 , F04C29/042 , F04C2270/19 , F04C2270/80
摘要： A high reliability water injected scroll air compressor is provided with an orbiting scroll, a fixed scroll corresponding to the orbiting scroll, a motor that generates driving force for making the orbiting scroll orbit the fixed scroll, a compressing path from a suction port to a discharge port, and a portion for injecting water into the compressing path. The operation is controlled by a switching operation in which water is injected into the compressing path and then no water is injected. Corrosion, failure of activation, and concerns about wrap contact when water is injected into an air end are avoided by switching the operation with water injection and the operation without water injection so as to prevent water from remaining in the air end.
摘要翻译：高可靠性注水涡旋式空气压缩机设有绕动涡旋盘，对应于绕动涡盘的固定涡旋盘，产生驱动力的马达，用于使绕动涡盘盘绕固定涡旋盘，从吸入口到排气口的压缩路径端口和用于将水注入压缩路径的部分。通过将水注入到压缩路径中并且没有水被注入的切换操作来控制操作。当水注入空气端时，腐蚀，活化失败以及对水分接触的担忧，避免了注水操作和无需注水的操作，以防止水留在空气端。

4. 发明授权

US06450791B1 Scroll compressor 有权
公开(公告)号：US06450791B1
公开(公告)日：2002-09-17
申请号：US09908843
申请日：2001-07-20
申请人： Natsuki Kawabata , Kazuaki Shiinoki , Masakazu Aoki , Shigeru Machida , Toshiaki Yabe
发明人： Natsuki Kawabata , Kazuaki Shiinoki , Masakazu Aoki , Shigeru Machida , Toshiaki Yabe
IPC分类号： F01C102
CPC分类号： F04C18/0223 , F01C21/08 , F04C18/0253 , F04C18/0284 , F04C29/0092 , F04C29/04
摘要： In a double toothed type scroll compressor, spiral wraps are formed on both sides of an end plate of an orbiting scroll, and wraps adapted to engage with the spiral wraps are formed on a stationary scroll. A dust wrap is formed on a side diametrically outside of the wrap of the stationary scroll. Grooves are formed on ends of the respective wraps to receive therein seal members formed of a high polymer material. Electric charge of static electricity produced when the seal members slide on surfaces of the mating end plate is made to flow from a bolt provided on an end of a crankshaft to the stationary scroll through a brush, thereby preventing accumulation of electric charge in a crankshaft.

5. 发明授权

US06461112B1 Screw compression apparatus and operation control method thereof 有权
标题翻译：螺杆压缩装置及其操作控制方法
公开(公告)号：US06461112B1
公开(公告)日：2002-10-08
申请号：US09671305
申请日：2000-09-28
申请人： Hiroshi Ohta , Masakazu Aoki , Hiroyuki Matsuda , Hitoshi Nishimura
发明人： Hiroshi Ohta , Masakazu Aoki , Hiroyuki Matsuda , Hitoshi Nishimura
IPC分类号： F04B4900
CPC分类号： F04C28/08 , F04C18/16 , F04C2240/403 , F04C2270/02 , F04C2270/18
摘要： In a capacity control method for an oil-free screw compressor, when an air consumption is larger than a set amount, a rotation frequency of a motor using an inverter to drive the compressor is set to be variable. When the air consumption is a set air amount or less, the inverter is controlled in such a manner that the rotation frequency of the motor is kept at a constant value. In this state, when an operation gas pressure of the compressor reaches an upper-limit value, an air release valve is opened to discharge the operation gas to the atmosphere. Additionally, the rotation frequency of the motor is lowered to a lower-limit value. Re-compression in the compressor can be prevented, and a compressor drive torque is lowered.
摘要翻译：在无油螺杆压缩机的容量控制方法中，当空气消耗量大于设定量时，使用变频器驱动压缩机的电动机的旋转频率被设定为可变的。当空气消耗量为设定的空气量以下时，以使电机的旋转频率保持恒定的方式来控制逆变器。在该状态下，当压缩机的运转气体压力达到上限值时，打开排气阀，将操作气体排出到大气中。此外，电动机的旋转频率降低到下限值。可以防止压缩机中的再压缩，并且压缩机驱动转矩降低。

6. 发明授权

US07750668B2 Semiconductor integrated circuit device having power reduction mechanism 失效
标题翻译：具有降压机构的半导体集成电路装置
公开(公告)号：US07750668B2
公开(公告)日：2010-07-06
申请号：US11979100
申请日：2007-10-31
申请人： Masashi Horiguchi , Kunio Uchiyama , Kiyoo Itoh , Takeshi Sakata , Masakazu Aoki , Takayuki Kawahara
发明人： Masashi Horiguchi , Kunio Uchiyama , Kiyoo Itoh , Takeshi Sakata , Masakazu Aoki , Takayuki Kawahara
IPC分类号： H03K19/003 , G05F1/10 , G06F1/32
CPC分类号： H01L27/0207 , G06F1/3203 , G11C5/14 , H01L27/0218 , H03K3/356113 , H03K19/0013 , H03K19/0016 , H03K19/01721
摘要： A semiconductor integrated circuit device is composed of logic gates each provided with at least two MOS transistors. The logic gates are connected to a first potential point and a second potential point. The semiconductor integrated circuit device includes a current control device connected between the logic gate and the first potential point and/or between the logic gate and the second potential point for controlling a value of a current flowing in the logic gate depending on an operating state of the logic gate. The circuit can be used in devices that cycle in operation between high and low power consumption modes, such as microprocessors that have both an operation mode and a low power back-up or sleep mode used for power reduction.
摘要翻译：半导体集成电路器件由各自设置有至少两个MOS晶体管的逻辑门组成。逻辑门连接到第一电势点和第二电位点。半导体集成电路装置包括连接在逻辑门与第一电位点之间和/或逻辑门与第二电势点之间的电流控制装置，用于根据操作状态控制在逻辑门中流动的电流的值逻辑门。该电路可用于在高功耗模式和低功耗模式之间循环运行的器件，例如具有用于功率降低的操作模式和低功率备用或睡眠模式的微处理器。

7. 发明授权

US07391998B2 Developing apparatus 失效
标题翻译：开发设备
公开(公告)号：US07391998B2
公开(公告)日：2008-06-24
申请号：US11353077
申请日：2006-02-14
申请人： Masakazu Aoki , Akinobu Okuda , Hironobu Kinoshita , Hideki Yasuda , Kazumasa Hayashi
发明人： Masakazu Aoki , Akinobu Okuda , Hironobu Kinoshita , Hideki Yasuda , Kazumasa Hayashi
IPC分类号： G03G15/08
CPC分类号： G03G15/0893 , G03G15/0877 , G03G2215/0833
摘要： The present invention provides a developing apparatus to be provided in a quick start up electrophotographic image forming apparatus that can efficiently prevent generation of unevenness by a screw pitch in a short period of time. The developing apparatus rotates a developer transporting screw so as to transport and supply a developer to a developer bearing member, and develops a latent image formed on an image bearing member by the developer. The developer transporting screw includes a vane winding around a rotation shaft in a spiral form. A vane surface on other side of a developer transport direction of the vane includes two planes having different angles with a rotational center line of the rotation shaft. Relationships of θ2
摘要翻译：本发明提供一种显影装置，其设置在快速启动电子照相图像形成装置中，其能够在短时间内有效地防止螺距的产生。显影装置旋转显影剂输送螺杆，以便将显影剂输送并供应到显影剂承载部件，并且通过显影剂显影形成在图像承载部件上的潜像。显影剂输送螺杆包括以螺旋形式围绕旋转轴缠绕的叶片。在叶片的显影剂输送方向的另一侧的叶片表面包括与旋转轴的旋转中心线具有不同角度的两个平面。满足θ2θ和10°<θ2 <= 60°的关系，其中θ1表示与旋转中心线之间的距离较长的平面之间的角度; 和旋转中心线，θ2表示与旋转中心线具有较短距离的面之间的角度; 和旋转中心线。

8. 发明申请

US20050023615A1 Semiconductor element and semiconductor memory device using the same 失效
标题翻译：半导体元件和使用其的半导体存储器件
公开(公告)号：US20050023615A1
公开(公告)日：2005-02-03
申请号：US10929424
申请日：2004-08-31
申请人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
发明人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
IPC分类号： H01L21/8247 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/04 , G11C16/28 , H01L21/28 , H01L21/336 , H01L27/01 , H01L27/115 , H01L29/423 , H01L29/51 , H01L29/66 , H01L29/76 , H01L29/788 , H01L29/792 , H01L29/94 , H01L31/036 , H01L31/062 , H01L31/112 , H01L31/113
CPC分类号： B82Y10/00 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/0466 , G11C16/10 , G11C16/28 , G11C2216/06 , G11C2216/08 , H01L21/28273 , H01L21/8221 , H01L27/0688 , H01L27/105 , H01L27/115 , H01L27/11526 , H01L27/11546 , H01L27/11551 , H01L27/1203 , H01L29/42328 , H01L29/513 , H01L29/66825 , H01L29/7613 , H01L29/785 , H01L29/7888
摘要： A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.
摘要翻译：一种场效应半导体元件，其具有较少数量的元件和减小的面积，并能够自身存储数据，而不需要在低温下进行冷却;以及采用该半导体元件的存储器件。栅极沟道电容被设置得如此小，以致捕获捕获一个电子或空穴是否可以根据半导体FET元件的电流的变化来明确且明显地被检测。通过检测通过在陷阱中捕获电子或空穴而导致的半导体元件的阈值电压的变化，可以在室温下实现数据存储。

9. 发明授权

US06611458B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US06611458B2
公开(公告)日：2003-08-26
申请号：US09780393
申请日：2001-02-12
申请人： Koichiro Ishibashi , Shoji Shukuri , Kazumasa Yanagisawa , Junichi Nishimoto , Masanao Yamaoka , Masakazu Aoki
发明人： Koichiro Ishibashi , Shoji Shukuri , Kazumasa Yanagisawa , Junichi Nishimoto , Masanao Yamaoka , Masakazu Aoki
IPC分类号： G11C1606
CPC分类号： G11C16/0441 , B82Y10/00 , C04B28/02 , C04B2103/0097 , C04B2111/00017 , C04B2111/00456 , C04B2111/00517 , C04B2111/2092 , G11C16/04 , G11C29/12 , G11C29/789 , G11C29/848 , G11C2216/10 , H01L22/22 , H01L23/53228 , H01L23/544 , H01L24/48 , H01L24/49 , H01L27/0211 , H01L27/105 , H01L27/10897 , H01L2223/5444 , H01L2223/54473 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48472 , H01L2224/49175 , H01L2224/85399 , H01L2924/00014 , H01L2924/10162 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , C04B14/04 , C04B14/06 , C04B14/14 , C04B14/16 , C04B20/008 , C04B24/00 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： To reduce cost of defect redundancy and trimming in a semiconductor integrated circuit having multiple layer wirings and copper wirings, address for salvaging defect of a memory cell array in a semiconductor is stored by using a nonvolatile memory element constituting a floating electrode by a first layer of polysilicon, or the nonvolatile memory element is programmed in testing the semiconductor integrated circuit, thereby, a special process is not needed in forming the nonvolatile memory element, that is, the nonvolatile memory element can be formed in a process of forming CMOS device and apparatus of laser beam for programming is not needed since the programming is carried out in testing, time necessary for programming can be shortened and therefore, testing cost can be reduced.
摘要翻译：为了降低具有多层布线和铜布线的半导体集成电路中的缺陷冗余和修整的成本，通过使用构成浮置电极的非易失性存储元件，通过第一层多晶硅或非易失性存储元件在对半导体集成电路进行测试时被编程，从而在形成非易失性存储元件时不需要特殊工艺，也就是说，可以在形成CMOS器件和器件的过程中形成非易失性存储元件用于编程的激光束不需要，因为在测试中进行编程，可以缩短编程所需的时间，因此可以降低测试成本。

10. 发明授权

US06175251B1 Semiconductor integrated circuit device having power reduction 有权
标题翻译：具有功率降低的半导体集成电路器件
公开(公告)号：US06175251B1
公开(公告)日：2001-01-16
申请号：US09291957
申请日：1999-04-15
申请人： Masashi Horiguchi , Kunio Uchiyama , Kiyoo Itoh , Takeshi Sakata , Masakazu Aoki , Takayuki Kawahara
发明人： Masashi Horiguchi , Kunio Uchiyama , Kiyoo Itoh , Takeshi Sakata , Masakazu Aoki , Takayuki Kawahara
IPC分类号： H03K190948
CPC分类号： H01L27/0207 , G06F1/3203 , G11C5/14 , H01L27/0218 , H03K3/356113 , H03K19/0013 , H03K19/0016 , H03K19/01721
摘要： A semiconductor integrated circuit device is composed of logic gates each provided with at least two MOS transistors. The logic gates are connected to a first potential point and a second potential point. The semiconductor integrated circuit device includes a current control device connected between the logic gate and the first potential point and/or between the logic gate and the second potential point for controlling a value of a current flowing in the logic gate depending on an operating state of the logic gate. The circuit can be used in devices that cycle in operation between high and low power consumption modes, such as microprocessors that have both an operation mode and a low power back-up or sleep mode used for power reduction.
摘要翻译：半导体集成电路器件由各自设置有至少两个MOS晶体管的逻辑门组成。逻辑门连接到第一电势点和第二电位点。半导体集成电路装置包括连接在逻辑门与第一电位点之间和/或逻辑门与第二电势点之间的电流控制装置，用于根据操作状态控制在逻辑门中流动的电流的值逻辑门。该电路可用于在高功耗模式和低功耗模式之间循环运行的器件，例如具有用于功率降低的操作模式和低功率备用或睡眠模式的微处理器。

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