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    • 4. 发明授权
    • Power semiconductor device and method of manufacturing the same
    • 功率半导体器件及其制造方法
    • US08643056B2
    • 2014-02-04
    • US13229203
    • 2011-09-09
    • Kiyoshi KimuraYasuto SumiHiroshi OhtaHiroyuki Irifune
    • Kiyoshi KimuraYasuto SumiHiroshi OhtaHiroyuki Irifune
    • H01L29/66
    • H01L29/0634H01L29/0638H01L29/0696H01L29/0878H01L29/1095H01L29/402H01L29/66712H01L29/7395H01L29/7802H01L29/7811H01L29/872
    • A power semiconductor device includes a first semiconductor layer of a first conductivity type, a first drift layer, and a second drift layer. The first drift layer includes a first epitaxial layer of the first conductivity type, a plurality of first first-conductivity-type pillar layers, and a plurality of first second-conductivity-type pillar layers. The second drift layer is formed on the first drift layer and includes a second epitaxial layer of the first conductivity type, a plurality of second second-conductivity-type pillar layers, a plurality of second first-conductivity-type pillar layers, a plurality of third second-conductivity-type pillar layers, and a plurality of third first-conductivity-type pillar layers. The plurality of second second-conductivity-type pillar layers are connected to the first second-conductivity-type pillar layers. The plurality of second first-conductivity-type pillar layers are connected to the first first-conductivity-type pillar layers. The plurality of third second-conductivity-type pillar layers are arranged on the first epitaxial layer.
    • 功率半导体器件包括第一导电类型的第一半导体层,第一漂移层和第二漂移层。 第一漂移层包括第一导电类型的第一外延层,多个第一第一导电型柱层和多个第一第二导电型柱层。 第二漂移层形成在第一漂移层上,并且包括第一导电类型的第二外延层,多个第二第二导电型柱层,多个第二第一导电型柱层,多个第二导电型柱层 第三第二导电型柱层和多个第三第一导电型柱层。 多个第二第二导电型柱层与第一第二导电型柱层连接。 多个第二第一导电型柱层与第一第一导电型柱层连接。 多个第三第二导电型柱层布置在第一外延层上。
    • 6. 发明申请
    • PHOTOCHROMIC LENS MANUFACTURING SYSTEM, PHOTOCHROMIC LENS MANUFACTURING DEVICE, PHOTOCHROMIC LENS MANUFACTURING PROGRAM, RECORDING MEDIUM HAVING PHOTOCHROMIC LENS MANUFACTURING PROGRAM RECORDED THEREUPON, AND PHOTOCHROMIC LENS MANUFACTURING METHOD
    • 光致变色镜制造系统,光致变色镜制造装置,光致变色镜制造程序,具有记录的光致变色镜制造程序的记录介质和光致变色镜制造方法
    • US20130142948A1
    • 2013-06-06
    • US13258853
    • 2010-03-31
    • Hiroshi OhtaTakeshi ImizuTakamitsu HiroseToshikazu Hashimoto
    • Hiroshi OhtaTakeshi ImizuTakamitsu HiroseToshikazu Hashimoto
    • B05D5/06G05B15/00
    • B05D5/066G02B5/23G02C7/102G05B15/00
    • A photochromic lens manufacturing system has an orderer side computer (101) and a manufacturer side computer (201) connected with each other through a communication line (300), and is adapted to manufacture a photochromic lens with an optical surface forming device (204), a photochromic film forming device (202) and a hard film forming device (204) under control of the manufacturer side computer (201). The orderer side computer (101) transmits lens substrate data related to a substrate material of the lens, optical surface data related to optical surfaces of the lens, data related to the photochromic film and data related to a hard film to the manufacturer side computer (201) through the communication line (300).The manufacturer side computer (201) comprises: a lens substrate selecting means adapted to select a lens substrate formed of a suitable material based on the lens substrate data received from the orderer side computer; an optical surface forming data selecting means adapted to select suitable optical surface forming data based on the optical surface data and output the selected data to the optical surface forming device (202); a photochromic film forming data selecting means adapted to select forming data of the photochromic film based on the data related to the photochromic film, and output the selected data to the photochromic film forming device (203); and a hard film forming data selecting means adapted to select forming data of the hard film based on the data related to the hard film, and output the selected data to the hard film forming device (204).
    • 光致变色透镜制造系统具有通过通信线路(300)彼此连接的订制器侧计算机(101)和制造商侧计算机(201),并且适于制造具有光学表面形成装置(204)的光致变色透镜, ,光致变色膜形成装置(202)和在制造商侧计算机(201)的控制下的硬膜形成装置(204)。 订书机侧计算机(101)将与透镜的基板材料相关的透镜基板数据,与透镜的光学表面相关的光学表面数据,与光致变色膜相关的数据和与硬膜相关的数据传送到制造商侧计算机 201)通过通信线路(300)。 制造商侧计算机(201)包括:透镜基板选择装置,适于基于从订书机侧计算机接收的透镜基板数据来选择由合适材料形成的透镜基板; 光学表面形成数据选择装置,适于基于所述光学表面数据选择合适的光学表面形成数据并将所选择的数据输出到所述光学表面形成装置(202); 基于与所述光致变色膜相关的数据选择所述光致变色膜的形成数据的光致变色膜形成数据选择装置,并将所选择的数据输出到所述光致变色膜形成装置(203)。 以及硬膜成形数据选择装置,其适于基于与所述硬膜相关的数据来选择所述硬膜的形成数据,并将所选择的数据输出到所述硬膜形成装置(204)。
    • 8. 发明授权
    • Power semiconductor device
    • 功率半导体器件
    • US08283720B2
    • 2012-10-09
    • US12050415
    • 2008-03-18
    • Wataru SaitoSyotaro OnoMasakatsu TakashitaYauto SumiMasaru IzumisawaWataru SekineHiroshi OhtaShoichiro Kurushima
    • Wataru SaitoSyotaro OnoMasakatsu TakashitaYauto SumiMasaru IzumisawaWataru SekineHiroshi OhtaShoichiro Kurushima
    • H01L29/00H01L29/66
    • H01L29/7802H01L29/0634H01L29/0878H01L29/1095
    • A power semiconductor device includes: a first semiconductor layer; a second semiconductor layer and a third semiconductor layer provided in an upper portion of the first semiconductor layer and alternately arranged parallel to an upper surface of the first semiconductor layer; a plurality of fourth semiconductor layers provided on the third semiconductor layer; a fifth semiconductor layer selectively formed in an upper surface of each of the fourth semiconductor layers; a control electrode; a gate insulating film; a first main electrode provided on a lower surface of the first semiconductor layer; and a second main electrode provided on the fourth and the fifth semiconductor layers. Sum of the amount of impurities in the second semiconductor layer and the amount of impurities in the third semiconductor layer at an end on the second main electrode side of the second semiconductor layer and the third semiconductor layer is smaller than the sum at a center of the second semiconductor layer and the third semiconductor layer in the direction from the first main electrode to the second main electrode.
    • 功率半导体器件包括:第一半导体层; 第二半导体层和第三半导体层,设置在所述第一半导体层的上部并且交替地平行于所述第一半导体层的上表面布置; 设置在所述第三半导体层上的多个第四半导体层; 选择性地形成在每个第四半导体层的上表面中的第五半导体层; 控制电极; 栅极绝缘膜; 设置在所述第一半导体层的下表面上的第一主电极; 以及设置在第四和第五半导体层上的第二主电极。 第二半导体层中的杂质量和第二半导体层的第二主电极侧端部的第三半导体层中的杂质量的和小于第二半导体层的第二主电极侧的和 第二半导体层和第三半导体层在从第一主电极到第二主电极的方向上。