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1. 发明授权

US5449660A Method of producing compound oxide by using partly citrating process 失效
标题翻译：通过部分柠檬酸化方法生产复合氧化物的方法
公开(公告)号：US5449660A
公开(公告)日：1995-09-12
申请号：US31926
申请日：1993-03-16
申请人： Fumio Munakata , Mitsugu Yamanaka , Susumu Hiyama
发明人： Fumio Munakata , Mitsugu Yamanaka , Susumu Hiyama
IPC分类号： C01B13/18 , C01B13/36 , C01G1/00 , C01G15/00 , C01G21/00 , C01G29/00 , C04B35/01 , C04B35/453 , H01B12/00 , H01L39/12
CPC分类号： C04B35/01 , C04B35/453 , Y10S505/734 , Y10S505/737 , Y10S505/738
摘要： A method of producing a compound oxide of elements including at least one of thallium, bismuth, lead, antimony, yttrium, each of rare earth elements, each of transition metal elements, each of alkali metal elements and each of alkaline earth metal elements. The method is comprised of the steps of (i) reacting at least one of carbonate, basic carbonate, hydroxide and co-precipitates of each of the above-mentioned elements with an amount of citric acid that is less than the weight equivalent of citric acid needed to form a completely citrated compound, and (ii) calcining the partly citrated compound. The co-precipitate can be one of a carbonate, a basic carbonate and a hydroxide of each of the above-mentioned elements.
摘要翻译：制备包含铊，铋，铅，锑，钇，稀土元素，过渡金属元素，碱金属元素和碱土金属元素中的至少一种的元素的复合氧化物的方法。该方法包括以下步骤：（i）使上述每种元素的碳酸盐，碱式碳酸盐，氢氧化物和共沉淀物中的至少一种与少于柠檬酸的重量当量的柠檬酸反应需要形成完全柠檬酸盐化合物，和（ii）煅烧部分柠檬酸盐化合物。共沉淀物可以是上述各种元素的碳酸盐，碱式碳酸盐和氢氧化物之一。

2. 发明授权

US5168095A Method for synthesizing a composite oxide by citrating process 失效
标题翻译：通过柠檬酸化方法合成复合氧化物的方法
公开(公告)号：US5168095A
公开(公告)日：1992-12-01
申请号：US657942
申请日：1991-02-21
申请人： Fumio Munakata , Mitsugu Yamanaka , Susumu Hiyama
发明人： Fumio Munakata , Mitsugu Yamanaka , Susumu Hiyama
IPC分类号： C01B13/18 , C01G3/00 , C01G51/00 , C01G53/00 , C04B35/45 , H01L39/24
CPC分类号： C04B35/4504 , C01B13/185 , C01G3/006 , C01G51/006 , C01G53/006 , H01L39/2477 , C01P2002/72 , C01P2002/88 , C01P2006/40 , C01P2006/42 , Y10S505/737
摘要： A composite oxide synthesized by a citrating process and utilized in functional ceramics materials is prepared by the following process. Co-precipitants or mixtures of at least one component selected from the group consisting of carbonates, basic copper and/or hydroxides of elements which compose a composite oxide are reacted with citric acid in an aqueous solution or in an organic solvent. The elements are selected from at least one element of the group consisting of Y, rare earth elements, transition elements, and alkali metal or alkaline earth metal elements. The citrate compound formed is baked to complete the composite oxide.The composite oxide synthesized by this invention has superconduction at the most temperature of 93.degree. K. with excellent Meissner effect.
摘要翻译：通过柠檬酸化合成并用于功能性陶瓷材料的复合氧化物通过以下方法制备。与选自组成复合氧化物的元素的碳酸盐，碱性铜和/或氢氧化物中的至少一种组分的共沉淀剂或混合物在柠檬酸的水溶液或有机溶剂中反应。元素选自由Y，稀土元素，过渡元素和碱金属或碱土金属元素组成的组中的至少一种元素。将形成的柠檬酸盐化合物烘烤以完成复合氧化物。通过本发明合成的复合氧化物在93°K的最高温度下具有超导性，具有优良的Meissner效应。

3. 发明授权

US09000493B2 Solid-state imaging device, method for producing same, and camera 有权
标题翻译：固态成像装置，其制造方法和相机
公开(公告)号：US09000493B2
公开(公告)日：2015-04-07
申请号：US13402298
申请日：2012-02-22
申请人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
发明人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
IPC分类号： H01L27/148 , H01L27/146 , H01L31/0224
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accumulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.
摘要翻译：固态成像装置包括具有相对面对的第一表面和第二表面的基板，光被接收通过第二表面; 第一表面上的布线层; 基板上的光电检测器; 第二表面和光电检测器之间的电荷累积区域; 以及在所述第二表面上的绝缘层，所述绝缘层具有至少部分地结晶的区域。

4. 发明授权

US08492804B2 Solid-state imaging device, method for producing same, and camera 有权
标题翻译：固态成像装置，其制造方法和相机
公开(公告)号：US08492804B2
公开(公告)日：2013-07-23
申请号：US12945217
申请日：2010-11-12
申请人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
发明人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译：固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。

5. 发明授权

US08183603B2 Solid-state imaging device for inhibiting dark current 有权
标题翻译：用于抑制暗电流的固态成像装置
公开(公告)号：US08183603B2
公开(公告)日：2012-05-22
申请号：US11677645
申请日：2007-02-22
申请人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
发明人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
IPC分类号： H01L27/148
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译：固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。

6. 发明申请

US20100060758A1 SOLID-STATE IMAGING DEVICE AND METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置和制造固态成像装置的方法
公开(公告)号：US20100060758A1
公开(公告)日：2010-03-11
申请号：US12544914
申请日：2009-08-20
申请人： Itaru Oshiyama , Yuki Miyanami , Susumu Hiyama , Kazuki Tanaka
发明人： Itaru Oshiyama , Yuki Miyanami , Susumu Hiyama , Kazuki Tanaka
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H01L27/14683 , H01L27/1463
摘要： A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.
摘要翻译：固态成像装置包括：传感器，包括设置在半导体衬底的表面层中的杂质扩散层; 和含有碳的氧化物绝缘膜，所述氧化物绝缘膜设置在所述传感器上。

7. 发明申请

US20090189235A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR THE SAME, AND IMAGING APPARATUS 有权
标题翻译：固态成像装置，其制造方法和成像装置
公开(公告)号：US20090189235A1
公开(公告)日：2009-07-30
申请号：US12339941
申请日：2008-12-19
申请人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
发明人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
IPC分类号： H01L31/10 , H01L31/18 , H01L31/0232
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.
摘要翻译：具有光电转换入射光的受光部的固体摄像装置具备形成在受光部的受光面上的绝缘膜和形成在绝缘膜上的负固定电荷的膜。在光接收部的受光面侧形成有空穴积聚层。形成有外围电路的外围电路部分设置在光接收部分的一侧。绝缘膜形成在外围电路部分的表面和具有负固定电荷的膜之间，使得从外围电路部分的表面到具有负固定电荷的膜的距离大于距离光的表面的距离接收部分电影有负固定费用。

8. 发明授权

US08293563B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08293563B2
公开(公告)日：2012-10-23
申请号：US12775037
申请日：2010-05-06
申请人： Susumu Hiyama
发明人： Susumu Hiyama
IPC分类号： H01L31/042
CPC分类号： H01L27/14685 , H01L27/14623
摘要： Disclosed herein is a method for making a semiconductor device including the steps of: forming a light-receiving portion for carrying out photoelectric conversion in a semiconductor substrate; forming an insulating film to cover a light-receiving side of the semiconductor substrate; forming a metallic light-shielding film to partly cover the insulating film in correspondence to the light-receiving portion; and heating the metallic light-shielding film by irradiation of the metallic light-shielding film with a microwave to permit selective annealing of a laminated portion with the metallic light-shielding film in the insulating film.
摘要翻译：本发明公开了一种制造半导体器件的方法，包括以下步骤：在半导体衬底中形成用于进行光电转换的光接收部分; 形成绝缘膜以覆盖半导体衬底的光接收侧; 形成与所述受光部对应地部分覆盖所述绝缘膜的金属遮光膜; 以及通过用微波照射金属遮光膜来加热金属遮光膜，以允许绝缘膜中的金属遮光膜对层压部分进行选择性退火。

9. 发明授权

US08217479B2 Solid-state image pickup element, method of manufacturing the same, and image pickup apparatus including the same 有权
标题翻译：固体摄像元件及其制造方法以及包括该固体摄像元件的摄像装置
公开(公告)号：US08217479B2
公开(公告)日：2012-07-10
申请号：US12691560
申请日：2010-01-21
申请人： Itaru Oshiyama , Susumu Hiyama
发明人： Itaru Oshiyama , Susumu Hiyama
IPC分类号： H01L31/0232 , H01L21/30
CPC分类号： H01L27/14649 , H01L27/14632 , H01L27/14687
摘要： An embodiment of the invention provides a solid-state image pickup element, including: a semiconductor layer having a photodiode, photoelectric conversion being carried out in the photodiode; a silicon oxide film formed on the semiconductor layer in a region having at least the photodiode by using plasma; and a film formed on the silicon oxide film and having negative fixed charges.
摘要翻译：本发明的实施例提供了一种固态摄像元件，包括：具有光电二极管的半导体层，在光电二极管中进行光电转换; 在通过使用等离子体的至少具有光电二极管的区域中的半导体层上形成的氧化硅膜; 以及形成在氧化硅膜上并具有负固定电荷的膜。

10. 发明申请

US20110237014A1 METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE 失效
标题翻译：制造固态成像装置的方法
公开(公告)号：US20110237014A1
公开(公告)日：2011-09-29
申请号：US13153941
申请日：2011-06-06
申请人： Susumu Hiyama , Tomoyuki Hirano
发明人： Susumu Hiyama , Tomoyuki Hirano
IPC分类号： H01L31/18
CPC分类号： H01L27/14601 , H01L27/14603 , H01L27/1462 , H01L27/14685 , H01L27/14689
摘要： A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a negative-charge accumulated layer having negative fixed charges is formed above a detection plane of the charge generator. The method includes the steps of: forming an oxygen-feed film capable of feeding oxygen on the detection plane of the charge generator; forming a metal film that covers the oxygen-feed film on the detection plane of the charge generator; and performing heat treatment for the metal film in an inactive atmosphere to thereby form an oxide of the metal film between the metal film and the oxygen-feed film on the detection plane of the charge generator, the oxide being to serve as the negative-charge accumulated layer.
摘要翻译：一种制造固态成像装置的方法，其中在半导体衬底上形成检测电磁波并产生信号电荷的电荷产生器，并且在电荷的检测平面上方形成具有负固定电荷的负电荷累积层发电机。该方法包括以下步骤：在电荷发生器的检测面上形成能够供给氧的氧供给膜; 形成覆盖所述电荷发生器的检测面上的氧供给膜的金属膜; 在惰性气氛中对金属膜进行热处理，从而在电荷发生器的检测面上形成金属膜与氧气供给膜之间的金属膜的氧化物，氧化物用作负电荷累积层

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