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1. 发明授权

US08071411B2 Low temperature ceramic microelectromechanical structures 有权
标题翻译：低温陶瓷微机电结构
公开(公告)号：US08071411B2
公开(公告)日：2011-12-06
申请号：US12341013
申请日：2008-12-22
申请人： Frederic Nabki , Mourad El-Gamal , Tomas A. Dusatko , Srikar Vengallatore
发明人： Frederic Nabki , Mourad El-Gamal , Tomas A. Dusatko , Srikar Vengallatore
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81C2203/0735
摘要： A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method provides for processing and manufacturing is steps limiting a maximum exposure of an integrated circuit upon which the MEMS is manufactured during MEMS manufacturing to below a temperature wherein CMOS circuitry is adversely affected, for example below 400° C., and sometimes to below 300° C. or 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronic integrated circuits, such as Si CMOS circuits.
摘要翻译：提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。该方法提供的处理和制造是限制在MEMS制造期间将MEMS制造的集成电路的最大曝光限制在低于其中CMOS电路受到不利影响的温度（例如低于400℃，有时低于300℃）的步骤 °C或250°C，从而允许将MEMS器件直接制造到诸如Si CMOS电路的电子集成电路上。

2. 发明申请

US20100279451A1 DIRECT CONTACT HEAT CONTROL OF MICRO STRUCTURES 有权
标题翻译：微结构的直接接触热控制
公开(公告)号：US20100279451A1
公开(公告)日：2010-11-04
申请号：US12810883
申请日：2008-12-29
申请人： Frederic Nabki , Mourad El-Gamal , Tomas A. Dusatko
发明人： Frederic Nabki , Mourad El-Gamal , Tomas A. Dusatko
IPC分类号： H01L21/02 , H01L21/50
CPC分类号： H03H9/2452 , B81B3/0078 , B81B7/0087 , B81B2201/0271 , B81B2207/015 , H03H3/0072 , H03H9/02401 , H03H9/02409 , H03H9/2426 , H03H9/2463
摘要： A method of providing thermal tuning of microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is disclosed. A heater is provided integrated with the MEMS for controllably heating the MEMS to control performance characteristics thereof.
摘要翻译：公开了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的热调谐的方法。集成有MEMS的加热器用于可控制地加热MEMS以控制其性能特征。

3. 发明授权

US08697545B2 Direct contact heat control of micro structures 有权
标题翻译：微结构的直接接触热控制
公开(公告)号：US08697545B2
公开(公告)日：2014-04-15
申请号：US12810883
申请日：2008-12-29
申请人： Frederic Nabki , Mourad El-Gamal , Tomas A. Dusatko
发明人： Frederic Nabki , Mourad El-Gamal , Tomas A. Dusatko
IPC分类号： H01L21/30
CPC分类号： H03H9/2452 , B81B3/0078 , B81B7/0087 , B81B2201/0271 , B81B2207/015 , H03H3/0072 , H03H9/02401 , H03H9/02409 , H03H9/2426 , H03H9/2463
摘要： A method for manufacturing microelectromechanical structures (MEMS) is disclosed. A low temperature MEMS device is designed. The low temperature MEM device is based upon a semiconductor manufacturing process comprising at least one semiconductor process for providing at least a heater therein. Each semiconductor process used in implementing the design is limited to a maximum temperature of the in-process low temperature MEMs device or a substrate onto which the low temperature MEMS device is being manufactured to below 300° C.
摘要翻译：公开了一种用于制造微机电结构（MEMS）的方法。设计了低温MEMS器件。低温MEM器件基于半导体制造工艺，其包括用于在其中至少提供加热器的至少一个半导体工艺。用于实现设计的每个半导体工艺被限制在工艺中的低温MEMs器件或低温MEMS器件制造的衬底在300℃以下的最高温度。

4. 发明申请

US20110027930A1 Low Temperature Wafer Level Processing for MEMS Devices 有权
标题翻译： MEMS器件的低温晶圆级处理
公开(公告)号：US20110027930A1
公开(公告)日：2011-02-03
申请号：US12922224
申请日：2009-03-11
申请人： Mourad El-Gamal , Dominique Lemoine , Paul-Vahe Cicek , Frederic Nabki
发明人： Mourad El-Gamal , Dominique Lemoine , Paul-Vahe Cicek , Frederic Nabki
IPC分类号： H01L21/50 , H01L21/30
CPC分类号： B81C1/00301 , G01L9/0042 , H01L21/02697 , H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/0557 , H01L2224/13009 , H01L2224/13021 , H01L2224/13023 , H01L2224/131 , H01L2924/00014 , H01L2924/0002 , H01L2924/12044 , H01L2924/1461 , H03H3/007 , H03H9/10 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要： Microelectromechanical systems (MEMS) are small integrated devices or systems that combine electrical and mechanical components. It would be beneficial for such MEMS devices to be integrated with silicon CMOS electronics and packaged in controlled environments and support industry standard mounting interconnections such as solder bump through the provisioning of through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and stresses placed on metallization membranes are not present in packaging conventional CMOS electronics. Accordingly there is provided a means of reinforcing the through-wafer vias for such integrated MEMS-CMOS circuits by in filling a predetermined portion of the through-wafer electrical vias with low temperature deposited ceramic materials which are deposited at temperatures below 350° C., and potentially to below 250° C., thereby allowing the re-inforcing ceramic to be deposited after fabrication of the CMOS electronics.
摘要翻译：微机电系统（MEMS）是组合电气和机械组件的小型集成设备或系统。这样的MEMS器件将与硅CMOS电子器件集成在一起并被封装在受控环境中并且通过提供基于晶片的基于电路的电互连来支持工业标准安装互连（例如焊料凸块）将是有益的。然而，在封装传统的CMOS电子器件时，MEMS器件的脆弱性质，对真空，气密封装以及置于金属化膜上的应力的要求并不存在。因此，提供了一种用于通过在低于350℃的温度下沉积的低温沉积陶瓷材料填充通过晶片电气通孔的预定部分来加强用于这种集成的MEMS-CMOS电路的贯通晶片通孔的手段，并且潜在地低于250℃，从而允许在制造CMOS电子器件之后沉积再膨胀陶瓷。

5. 发明授权

US08409901B2 Low temperature wafer level processing for MEMS devices 有权
标题翻译： MEMS器件的低温晶圆级处理
公开(公告)号：US08409901B2
公开(公告)日：2013-04-02
申请号：US12922224
申请日：2009-03-11
申请人： Mourad El-Gamal , Dominique Lemoine , Paul-Vahe Cicek , Frederic Nabki
发明人： Mourad El-Gamal , Dominique Lemoine , Paul-Vahe Cicek , Frederic Nabki
IPC分类号： H01L21/768
CPC分类号： B81C1/00301 , G01L9/0042 , H01L21/02697 , H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/0557 , H01L2224/13009 , H01L2224/13021 , H01L2224/13023 , H01L2224/131 , H01L2924/00014 , H01L2924/0002 , H01L2924/12044 , H01L2924/1461 , H03H3/007 , H03H9/10 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要： Microelectromechanical systems (MEMS) are small integrated devices or systems that combine electrical and mechanical components. It would be beneficial for such MEMS devices to be integrated with silicon CMOS electronics and packaged in controlled environments and support industry standard mounting interconnections such as solder bump through the provisioning of through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and stresses placed on metallization membranes are not present in packaging conventional CMOS electronics. Accordingly there is provided a means of reinforcing the through-wafer vias for such integrated MEMS-CMOS circuits by in filling a predetermined portion of the through-wafer electrical vias with low temperature deposited ceramic materials which are deposited at temperatures below 350° C., and potentially to below 250° C., thereby allowing the re-inforcing ceramic to be deposited after fabrication of the CMOS electronics.
摘要翻译：微机电系统（MEMS）是组合电气和机械组件的小型集成设备或系统。这样的MEMS器件将与硅CMOS电子器件集成在一起并被封装在受控环境中并且通过提供基于晶片的基于电路的电互连来支持工业标准安装互连（例如焊料凸块）将是有益的。然而，在封装传统的CMOS电子器件时，MEMS器件的脆弱性质，对真空，气密封装以及置于金属化膜上的应力的要求并不存在。因此，提供了一种用于通过在低于350℃的温度下沉积的低温沉积陶瓷材料填充通过晶片电气通孔的预定部分来加强用于这种集成的MEMS-CMOS电路的贯通晶片通孔的手段，并且潜在地低于250℃，从而允许在制造CMOS电子器件之后沉积再膨胀陶瓷。

6. 发明申请

US20160139173A1 COMBINED MAGNETOMETER ACCELEROMETER MEMS DEVICES AND METHODS 审中-公开
标题翻译：组合磁力计加速度计MEMS器件及方法
公开(公告)号：US20160139173A1
公开(公告)日：2016-05-19
申请号：US14943498
申请日：2015-11-17
申请人： Mourad El-Gamal , Mohannad Elsayed , Paul-Vahe Cicek , Frederic Nabki
发明人： Mourad El-Gamal , Mohannad Elsayed , Paul-Vahe Cicek , Frederic Nabki
IPC分类号： G01P15/125 , B81C1/00 , G01R33/028 , B81B7/00
CPC分类号： G01P15/125 , B81B3/0021 , B81B7/008 , B81B2201/0221 , B81B2201/0235 , B81B2201/0292 , B81B2203/0109 , B81B2203/0307 , B81C1/00015 , B81C2203/0735 , B81C2203/0771 , G01P15/18 , G01P2015/084 , G01R33/0286
摘要： Considerations for selecting capacitive sensors include accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, integration options with other sensors and/or electronics, and cost effectiveness. It is beneficial if such sensors are amenable to above-IC integration with associated control/readout circuitry for reduced parasitics and reduced footprint through area sharing. The inventors have established a combined Lorentz force based magnetometer and accelerometer MEMS sensor exploiting a low temperature, above-IC-compatible fabrication process operating without requiring vacuum packaging. By switching an electrical current between two perpendicular directions on the device structure a 2D in-plane magnetic field measurement can be achieved whilst concurrently, the device serves as a 1D accelerometer for out-of-plane acceleration, by switching the current off and by monitoring the structure's capacitive change in response to acceleration. The design can thus separate magnetic and inertial force measurements, utilizing a single compact device.
摘要翻译：选择电容式传感器的注意事项包括精度，重复性，长期稳定性，校准容易性，对化学和物理污染物的抵抗力，尺寸，包装，与其他传感器和/或电子设备的集成选项以及成本效益。如果这样的传感器适合于与相关的控制/读出电路的IC集成以减少寄生效应并且通过区域共享来减少占地面积是有益的。本发明人已经建立了一种组合的洛仑兹力量磁力计和加速度计MEMS传感器，利用低温，高于IC的兼容制造工艺，而不需要真空包装。通过在器件结构上切换两个垂直方向之间的电流，可以在同时进行2D平面内磁场测量，同时通过切断电流和监测器件，作为用于超平面加速度的1D加速度计结构的电容变化响应加速度。因此，该设计可以利用单个紧凑装置分离磁力和惯性力测量。

7. 发明授权

US08658452B2 Low temperature ceramic microelectromechanical structures 有权
标题翻译：低温陶瓷微机电结构
公开(公告)号：US08658452B2
公开(公告)日：2014-02-25
申请号：US13003328
申请日：2009-07-08
申请人： Mourad El-Gamal , Frederic Nabki , Paul-Vahe Cicek
发明人： Mourad El-Gamal , Frederic Nabki , Paul-Vahe Cicek
IPC分类号： H01L21/00 , H01L27/14
CPC分类号： B81C1/00666 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2201/0235 , B81B2201/0271 , B81B2201/03 , B81B2207/015 , B81B2207/03 , B81C1/00063 , B81C1/00246 , B81C1/00396 , B81C1/00587 , B81C2201/014 , B81C2201/0169 , B81C2201/0174 , B81C2203/0721 , B81C2203/0735
摘要： A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.
摘要翻译：提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如作为Si CMOS电路。该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

8. 发明申请

US20110111545A1 LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES 有权
标题翻译：低温陶瓷微电子结构
公开(公告)号：US20110111545A1
公开(公告)日：2011-05-12
申请号：US13003328
申请日：2009-07-08
申请人： Mourad El-Gamal
发明人： Mourad El-Gamal
IPC分类号： H01L21/02
CPC分类号： B81C1/00666 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2201/0235 , B81B2201/0271 , B81B2201/03 , B81B2207/015 , B81B2207/03 , B81C1/00063 , B81C1/00246 , B81C1/00396 , B81C1/00587 , B81C2201/014 , B81C2201/0169 , B81C2201/0174 , B81C2203/0721 , B81C2203/0735
摘要： A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.
摘要翻译：提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如作为Si CMOS电路。该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

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