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1. 发明申请

US20150008788A1 LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES 有权
标题翻译：低温陶瓷微电子结构
公开(公告)号：US20150008788A1
公开(公告)日：2015-01-08
申请号：US14185160
申请日：2014-02-20
申请人： The Royal Institution for the Advancement of Learning / McGill University
发明人： Mourad El-Gamal , Frederic Nabki , Paul-Vahe Cicek
IPC分类号： B81C1/00 , B81B7/00 , B81B3/00
CPC分类号： B81C1/00666 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2201/0235 , B81B2201/0271 , B81B2201/03 , B81B2207/015 , B81B2207/03 , B81C1/00063 , B81C1/00246 , B81C1/00396 , B81C1/00587 , B81C2201/014 , B81C2201/0169 , B81C2201/0174 , B81C2203/0721 , B81C2203/0735
摘要： A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.
摘要翻译：提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如作为Si CMOS电路。该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

2. 发明授权

US08288835B2 Microshells with integrated getter layer 有权
标题翻译：具有集成吸气剂层的微型壳
公开(公告)号：US08288835B2
公开(公告)日：2012-10-16
申请号：US13017844
申请日：2011-01-31
申请人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
发明人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC分类号： H01L29/84
CPC分类号： B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
摘要： Microshells including a perforated pre-sealing layer and an integrated getter layer are provided. The integrated getter layer may be disposed between other layers of a perforated pre-sealing layer. The perforated pre-sealing layer may include at least one perforation, and a sealing layer may be provided on the pre-sealing layer to close the perforation.
摘要翻译：提供了包括穿孔预密封层和集成吸气剂层的微壳。集成的吸气剂层可以设置在穿孔预密封层的其它层之间。穿孔预密封层可以包括至少一个穿孔，并且可以在预密封层上设置密封层以封闭穿孔。

3. 发明授权

US09382111B2 Micromechanical system and method for manufacturing a micromechanical system 有权
标题翻译：微机械系统及其制造方法
公开(公告)号：US09382111B2
公开(公告)日：2016-07-05
申请号：US14696757
申请日：2015-04-27
申请人： Infineon Technologies Dresden GmbH
发明人： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Boris Binder , Steffen Bieselt
IPC分类号： H01L21/00 , B81C1/00 , B81B7/00
CPC分类号： B81C1/00246 , B81B7/008 , B81B2201/0264 , B81B2203/0315 , B81C2203/0721 , B81C2203/0735 , G01L9/0073
摘要： A method for manufacturing a micromechanical system is shown. The method comprises the steps of forming in a front end of line (FEOL) process a transistor in a transistor region. After the FEOL process, a protective layer is deposited in the transistor region, wherein the protective layer comprises an isolating material, e.g. an oxide. A structured sacrificial layer is formed at least in a region which is not the transistor region. Furthermore, a functional layer is formed which is at least partially covering the structured sacrificial layer. After the functional layer is formed removing the sacrificial layer in order to create a cavity between the functional layer and a surface, where the sacrificial layer was deposited on. The protective layer protects the transistor from being damaged especially during etching processes in further processing steps in MOL (middle of line) and BEOL (back end of line) processes. Using an oxide for said protective layer is advantageous, since the same oxide may be used as the basis for a metallization process in the BEOL. Therefore, the protective layer may remain over the transistor and does not need to be removed like the sacrificial layer, which is typically used as a protection for the transistor. Therefore, the protective layer becomes part of the oxide coverage, which is applied before the BEOL process.
摘要翻译：示出了用于制造微机械系统的方法。该方法包括以下步骤：在线的前端（FEOL）处理晶体管区域中的晶体管。在FEOL处理之后，保护层沉积在晶体管区域中，其中保护层包括隔离材料，例如，氧化物。至少在不是晶体管区域的区域中形成结构化牺牲层。此外，形成至少部分地覆盖结构化牺牲层的功能层。在形成功能层之后，去除牺牲层，以便在功能层和沉积有牺牲层的表面之间形成空腔。保护层保护晶体管不被损坏，特别是在MOL（中间线）和BEOL（后端）工艺的进一步处理步骤中的蚀刻工艺期间。使用用于所述保护层的氧化物是有利的，因为可以使用相同的氧化物作为BEOL中的金属化工艺的基础。因此，保护层可以保留在晶体管上方，并且不需要像牺牲层一样去除，其通常用作晶体管的保护。因此，保护层成为在BEOL工艺之前施加的氧化物覆盖的一部分。

4. 发明申请

US20150375999A1 MICROMECHANICAL SYSTEM AND METHOD FOR MANUFACTURING A MICROMECHANICAL SYSTEM 有权
标题翻译：微生物系统及其制造方法
公开(公告)号：US20150375999A1
公开(公告)日：2015-12-31
申请号：US14696757
申请日：2015-04-27
申请人： Infineon Technologies Dresden GmbH
发明人： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Boris Binder , Steffen Bieselt
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00246 , B81B7/008 , B81B2201/0264 , B81B2203/0315 , B81C2203/0721 , B81C2203/0735 , G01L9/0073
摘要： A method for manufacturing a micromechanical system is shown. The method comprises the steps of forming in a front end of line (FEOL) process a transistor in a transistor region. After the FEOL process, a protective layer is deposited in the transistor region, wherein the protective layer comprises an isolating material, e.g. an oxide. A structured sacrificial layer is formed at least in a region which is not the transistor region. Furthermore, a functional layer is formed which is at least partially covering the structured sacrificial layer. After the functional layer is formed removing the sacrificial layer in order to create a cavity between the functional layer and a surface, where the sacrificial layer was deposited on. The protective layer protects the transistor from being damaged especially during etching processes in further processing steps in MOL (middle of line) and BEOL (back end of line) processes. Using an oxide for said protective layer is advantageous, since the same oxide may be used as the basis for a metallization process in the BEOL. Therefore, the protective layer may remain over the transistor and does not need to be removed like the sacrificial layer, which is typically used as a protection for the transistor. Therefore, the protective layer becomes part of the oxide coverage, which is applied before the BEOL process.
摘要翻译：示出了用于制造微机械系统的方法。该方法包括以下步骤：在线的前端（FEOL）处理晶体管区域中的晶体管。在FEOL处理之后，保护层沉积在晶体管区域中，其中保护层包括隔离材料，例如，氧化物。至少在不是晶体管区域的区域中形成结构化牺牲层。此外，形成至少部分地覆盖结构化牺牲层的功能层。在形成功能层之后，去除牺牲层，以便在功能层和沉积有牺牲层的表面之间形成空腔。保护层保护晶体管不被损坏，特别是在MOL（中间线）和BEOL（后端）工艺的进一步处理步骤中的蚀刻工艺期间。使用用于所述保护层的氧化物是有利的，因为可以使用相同的氧化物作为BEOL中的金属化工艺的基础。因此，保护层可以保留在晶体管上方，并且不需要像牺牲层一样去除，其通常用作晶体管的保护。因此，保护层成为在BEOL工艺之前施加的氧化物覆盖的一部分。

5. 发明申请

US20150375998A1 MICROMECHANICAL SYSTEM AND METHOD FOR MANUFACTURING A MICROMECHANICAL SYSTEM 有权
标题翻译：微生物系统及其制造方法
公开(公告)号：US20150375998A1
公开(公告)日：2015-12-31
申请号：US14315979
申请日：2014-06-26
申请人： Infineon Technologies Dresden GmbH
发明人： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Boris Binder
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00246 , B81B7/008 , B81B2201/0264 , B81B2203/0315 , B81C2203/0721 , B81C2203/0735 , G01D5/145 , G01L9/0073
摘要： A method for manufacturing a micromechanical system includes forming in a Front-End-of-Line (FEOL) process transistors in a transistor region; after the FEOL-process, forming a sacrificial layer; structuring the sacrificial layer to form a structured sacrificial layer; forming a functional layer at least partially covering the structured sacrificial layer; and removing the sacrificial layer to create a cavity.
摘要翻译：一种用于制造微机械系统的方法包括在晶体管区域中的前端（FEOL）处理晶体管中形成; 在FEOL工艺之后，形成牺牲层; 构造牺牲层以形成结构化牺牲层; 形成至少部分地覆盖所述结构化牺牲层的功能层; 并去除牺牲层以形成空腔。

6. 发明授权

US07821010B2 Low temperature fabrication of conductive micro structures 有权
标题翻译：导电微结构的低温制造
公开(公告)号：US07821010B2
公开(公告)日：2010-10-26
申请号：US11427272
申请日：2006-06-28
申请人： Shaoher X. Pan , Chii Guang Lee
发明人： Shaoher X. Pan , Chii Guang Lee
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H01L29/78
CPC分类号： B81C1/00246 , B81B2201/047 , B81C2201/0176 , B81C2203/0721 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： A method of fabricating a micro structure includes depositing amorphous silicon over a substrate having an electric circuit at a temperature below 550° C. to form a first structure portion, wherein at least part of the first structure portion is configured to receive an electrical signal from the electric circuit.
摘要翻译：一种制造微结构的方法包括在低于550℃的温度下在具有电路的衬底上沉积非晶硅，以形成第一结构部分，其中第一结构部分的至少一部分被配置成从电路。

7. 发明授权

US09643837B1 Sensor device and method for making thereof 有权
公开(公告)号：US09643837B1
公开(公告)日：2017-05-09
申请号：US15009909
申请日：2016-01-29
申请人： Infineon Technologies AG
发明人： Matthias Friedrich Herrmann
IPC分类号： H01L29/84 , H01L23/06 , H01L21/00 , B81B3/00
CPC分类号： B81B3/0072 , B81B7/0048 , B81B2201/0264 , B81B2207/015 , B81B2207/09 , B81C1/00309 , B81C2203/0721 , B81C2203/0735
摘要： A sensor device may include an electronic device that has at least one integrated circuit device and a MEMS sensor that are each monolithically integrated with a semiconductor substrate. The sensor device may include a suspension structure that suspends the MEMS sensor over a back cavity within the semiconductor substrate. The suspension structure may be springs or a spring structure formed from etching the front side of the substrate.

8. 发明申请

US20170104041A1 DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, DISPLAY METHOD, AND WEARABLE DEVICE 有权
公开(公告)号：US20170104041A1
公开(公告)日：2017-04-13
申请号：US15207005
申请日：2016-07-11
申请人： BOE TECHNOLOGY GROUP CO., LTD. , CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Zhidong WANG , Jing YU , Yue LONG
IPC分类号： H01L27/32 , B81B7/00 , B81C1/00 , H01L51/00
CPC分类号： H01L27/3225 , B81B7/008 , B81B2201/042 , B81B2207/015 , B81C1/00246 , B81C2203/0721 , H01L27/3246 , H01L51/0096 , H01L51/5271 , H01L2227/323 , H01L2227/326
摘要： The present disclosure discloses a display device, a method of manufacturing the same, a display method, and a wearable device. The display includes a first base substrate; a low-temperature polysilicon (LTPS) back plate formed on the first base substrate and provided with a switch control circuit; and a micro-electro-mechanical system (MEMS) microlens array formed at a non-display region of the first base substrate, wherein the MEMS microlens array is configured to reflect light emitted by a light-emitting structure at the display region, and the switch control circuit is configured to control the MEMS microlens array to be turned on and off; and the light-emitting structure formed at the display region of the first base substrate.

9. 发明申请

US20110121412A1 PLANAR MICROSHELLS FOR VACUUM ENCAPSULATED DEVICES AND DAMASCENE METHOD OF MANUFACTURE 有权
公开(公告)号：US20110121412A1
公开(公告)日：2011-05-26
申请号：US13017844
申请日：2011-01-31
申请人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
发明人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC分类号： H01L29/84 , H01L21/04
CPC分类号： B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
摘要： Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

10. 发明授权

US07923790B1 Planar microshells for vacuum encapsulated devices and damascene method of manufacture 有权
标题翻译：用于真空封装装置的平面微壳和大马士革制造方法
公开(公告)号：US07923790B1
公开(公告)日：2011-04-12
申请号：US11716070
申请日：2007-03-09
申请人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
发明人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC分类号： H01L29/84
CPC分类号： B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
摘要： Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.
摘要翻译：用于MEMS和微电子等器件封装的低温多层平面微型壳体。微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

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