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1. 发明授权

US07208770B2 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 有权
标题翻译：在光子集成电路（PIC）中的有源半导体器件中的氧掺杂的含Al电流阻挡层
公开(公告)号：US07208770B2
公开(公告)日：2007-04-24
申请号：US11059207
申请日：2005-02-16
申请人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
发明人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/109 , H01L33/145 , H01S5/026 , H01S5/2072 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3072 , H01S5/34306 , Y02E10/544
摘要： In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.
摘要翻译：在具有至少一个有源半导体器件（例如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件）的光子集成电路（PIC）中，多个半导体层其中一层是活性区的基底。通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

2. 发明授权

US07122846B2 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 有权
标题翻译：在光子集成电路（PIC）中的有源半导体器件中的氧掺杂的含Al电流阻挡层
公开(公告)号：US07122846B2
公开(公告)日：2006-10-17
申请号：US11059201
申请日：2005-02-16
申请人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
发明人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
IPC分类号： H01L29/221 , H01L29/22
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/109 , H01L33/145 , H01S5/026 , H01S5/2072 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3072 , H01S5/34306 , Y02E10/544
摘要： In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.
摘要翻译：在具有至少一个有源半导体器件（例如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件）的光子集成电路（PIC）中，多个半导体层其中一层是活性区的基底。通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

3. 发明授权

US07885492B2 Transmitter photonic integrated circuit (TxPIC) chips 有权
标题翻译：发射机光子集成电路（TxPIC）芯片
公开(公告)号：US07885492B2
公开(公告)日：2011-02-08
申请号：US10317935
申请日：2002-12-11
申请人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Ting-Kuang Chiang , Marco E. Sosa
发明人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Ting-Kuang Chiang , Marco E. Sosa
IPC分类号： G02B6/12
CPC分类号： G02B6/12011 , B82Y20/00 , G01R31/31728 , G01R31/318511 , G02B6/12004 , G02B6/12007 , G02B6/12019 , G02B6/12021 , G02B6/12023 , G02B6/12026 , G02B6/12028 , G02B6/12033 , G02B6/131 , G02B6/136 , G02B6/4204 , G02F1/01725 , G02F2001/0175 , G02F2001/01758 , G02F2203/69 , H01L31/125 , H01S5/0014 , H01S5/0085 , H01S5/02248 , H01S5/026 , H01S5/0262 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/06832 , H01S5/12 , H01S5/1228 , H01S5/2077 , H01S5/22 , H01S5/3408 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04B10/2914 , H04B10/50 , H04J14/02 , H04J14/0246 , H04J14/025 , H04J14/0258 , H04J14/0265 , H04J14/0276 , H04J14/0282
摘要： A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.
摘要翻译：一种包括调制源阵列的光子集成电路（PIC）芯片，每个调制源提供在不同于其它调制源的信道波长的信道波长处的调制信号输出，以及具有光耦合到接收到的所有信号输出的输入的波长选择性组合器并从芯片提供输出波导上的组合输出信号。调制源，组合器和输出波导均集成在同一芯片上。

4. 发明授权

US07087449B2 Oxygen-doped Al-containing current blocking layers in active semiconductor devices 有权
公开(公告)号：US07087449B2
公开(公告)日：2006-08-08
申请号：US10875418
申请日：2004-06-24
申请人： Fred A. Kish, Jr. , Sheila K. Mathis , Charles H. Joyner , Richard P. Schneider
发明人： Fred A. Kish, Jr. , Sheila K. Mathis , Charles H. Joyner , Richard P. Schneider
IPC分类号： H01L21/20
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/109 , H01L33/145 , H01S5/026 , H01S5/2072 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3072 , H01S5/34306 , Y02E10/544
摘要： An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III–V compound, i.e., an Al-III–V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III–V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III–V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.

5. 发明授权

US09372306B1 Method of achieving acceptable performance in and fabrication of a monolithic photonic integrated circuit (PIC) with integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL) 有权
标题翻译：在具有集成的激光源阵列和使用延伸的相同有源层（EIAL）的调制器的单片光子集成电路（PIC）中实现可接受的性能和制造方法，
公开(公告)号：US09372306B1
公开(公告)日：2016-06-21
申请号：US11045827
申请日：2005-01-27
申请人： Radhakrishnan L. Nagarajan , Fred A. Kish, Jr. , Masaki Kato , Charles H. Joyner , David F. Welch , Randal A. Salvatore , Richard P. Schneider , Mehrdad Ziari , Damien Jean Henri Lambert , Sheila K. Hurtt , Andrew G. Dentai , Atul Mathur , Vincent G. Dominic
发明人： Radhakrishnan L. Nagarajan , Fred A. Kish, Jr. , Masaki Kato , Charles H. Joyner , David F. Welch , Randal A. Salvatore , Richard P. Schneider , Mehrdad Ziari , Damien Jean Henri Lambert , Sheila K. Hurtt , Andrew G. Dentai , Atul Mathur , Vincent G. Dominic
IPC分类号： G02B6/12
CPC分类号： G02B6/12009 , G02B6/00 , G02B6/02204 , G02B6/12004 , G02B6/12019 , G02B6/12023 , G02B6/12026 , G02B6/12028 , G02B6/12033 , G02B6/124 , G02B6/4215 , G02F1/0121 , G02F1/01725 , G02F1/025 , G02F2001/0175 , G02F2001/01758 , G02F2203/05 , H01S5/0085 , H01S5/024 , H01S5/02415 , H01S5/02453 , H01S5/02461 , H01S5/02476 , H01S5/026 , H01S5/0261 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/0687 , H01S5/12 , H01S5/1228 , H01S5/2077 , H01S5/22 , H01S5/2214 , H01S5/2224 , H01S5/227 , H01S5/2272 , H01S5/2275 , H01S5/3408 , H01S5/34306 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04B10/506 , H04B10/572 , H04J14/02
摘要： A method provides acceptable performance from a semiconductor transmitter photonic integrated circuit (TxPIC) that contains a plurality of modulated sources each comprising a laser source and an external modulator where each laser source provides a different emission wavelength and each modulated source forms a separate signal channel, comprising the steps of providing at least some of the signal channels with an extended identical active layer (EIAL) so that the modulated sources each have an identical active region wavelength and detuning the laser emission wavelength in each laser source within the EIAL from the laser active region wavelength.
摘要翻译：一种方法从包含多个调制源的半导体发射器光子集成电路（TxPIC）提供可接受的性能，每个调制源包括激光源和外部调制器，其中每个激光源提供不同的发射波长，并且每个调制的源形成单独的信号通道，包括以下步骤：向扩展的相同有源层（EIAL）提供信号通道的至少一些，使得调制源各自具有相同的有源区波长并使来自激光器活动的EIAL内的每个激光源中的激光发射波长失谐区域波长。

6. 发明授权

US07773837B2 Monolithic transmitter photonic integrated circuit (TXPIC) with a transversely disposed output 有权
标题翻译：单片发射器光子集成电路（TXPIC）具有横向布置的输出
公开(公告)号：US07773837B2
公开(公告)日：2010-08-10
申请号：US12240543
申请日：2008-09-29
申请人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Jonas Webjorn , Drew D. Perkins
发明人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Jonas Webjorn , Drew D. Perkins
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/12007 , G02B6/12019 , G02B6/12023 , G02B6/12033 , G02B6/131 , G02B6/136 , H01S5/026 , H01S5/0262 , H01S5/0265 , H01S5/0268 , H01S5/0612 , H01S5/12 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04J14/02
摘要： A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.
摘要翻译：一种包括调制源阵列的光子集成电路（PIC）芯片，每个调制源提供在不同于其它调制源的信道波长的信道波长处的调制信号输出，以及具有光耦合到接收到的所有信号输出的输入的波长选择性组合器并从芯片提供输出波导上的组合输出信号。调制源，组合器和输出波导均集成在同一芯片上。

7. 发明授权

US07680368B2 Monolithic transmitter photonic integrated circuit (TxPIC) with a traversely disposed output 有权
标题翻译：单片发射器光子集成电路（TxPIC），具有横向输出
公开(公告)号：US07680368B2
公开(公告)日：2010-03-16
申请号：US11773960
申请日：2007-07-06
申请人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Jonas Webjorn , Drew D. Perkins
发明人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Jonas Webjorn , Drew D. Perkins
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/12007 , G02B6/12019 , G02B6/12023 , G02B6/12033 , G02B6/131 , G02B6/136 , H01S5/026 , H01S5/0262 , H01S5/0265 , H01S5/0268 , H01S5/0612 , H01S5/12 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04J14/02
摘要： A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.
摘要翻译：一种包括调制源阵列的光子集成电路（PIC）芯片，每个调制源提供在不同于其它调制源的信道波长的信道波长处的调制信号输出，以及具有光耦合到接收到的所有信号输出的输入的波长选择性组合器并从芯片提供输出波导上的组合输出信号。调制源，组合器和输出波导均集成在同一芯片上。

8. 发明授权

US07672546B2 Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips 有权
标题翻译：具有多个单片光子集成电路半导体芯片的光传送网络
公开(公告)号：US07672546B2
公开(公告)日：2010-03-02
申请号：US11767311
申请日：2007-06-22
申请人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Richard P. Schneider , Charles H. Joyner , Jonas Webjorn , Marco E. Sosa
发明人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Richard P. Schneider , Charles H. Joyner , Jonas Webjorn , Marco E. Sosa
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/12007 , G02B6/12019 , G02B6/12023 , G02B6/12033 , G02B6/131 , G02B6/136 , H01S5/026 , H01S5/0262 , H01S5/0265 , H01S5/0268 , H01S5/0612 , H01S5/12 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04J14/02
摘要： A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.
摘要翻译：一种包括调制源阵列的光子集成电路（PIC）芯片，每个调制源提供在不同于其它调制源的信道波长的信道波长处的调制信号输出，以及具有光耦合到接收到的所有信号输出的输入的波长选择性组合器并从芯片提供输出波导上的组合输出信号。调制源，组合器和输出波导均集成在同一芯片上。

9. 发明授权

US07519246B2 Photonic integrated circuit (PIC) chips 有权
标题翻译：光子集成电路（PIC）芯片
公开(公告)号：US07519246B2
公开(公告)日：2009-04-14
申请号：US11869420
申请日：2007-10-09
申请人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Jonas Webjorn , Ting-Kuang Chiang , Robert Grencavich , Vinh D. Nguyen , Donald J. Pavinski, Jr. , Marco E. Sosa
发明人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Jonas Webjorn , Ting-Kuang Chiang , Robert Grencavich , Vinh D. Nguyen , Donald J. Pavinski, Jr. , Marco E. Sosa
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/12007 , G02B6/12019 , G02B6/12023 , G02B6/12033 , G02B6/131 , G02B6/136 , H01S5/026 , H01S5/0262 , H01S5/0265 , H01S5/0268 , H01S5/0612 , H01S5/12 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04J14/02
摘要： A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.
摘要翻译：一种包括调制源阵列的光子集成电路（PIC）芯片，每个调制源提供在不同于其它调制源的信道波长的信道波长处的调制信号输出，以及具有光耦合到接收到的所有信号输出的输入的波长选择性组合器并从芯片提供输出波导上的组合输出信号。调制源，组合器和输出波导均集成在同一芯片上。

10. 发明授权

US07437029B2 Method of manufacturing and apparatus for a transmitter photonic integrated circuit (TXPIC) chip 有权
标题翻译：用于发射机光子集成电路（TXPIC）芯片的制造方法和装置
公开(公告)号：US07437029B2
公开(公告)日：2008-10-14
申请号：US11279004
申请日：2006-04-07
申请人： Charles H. Joyner , Fred A. Kish, Jr. , Frank H. Peters , Atul Mathur , David F. Welch , Andrew G. Dentai , Damien Lambert , Richard P. Schneider , Mark J. Missey
发明人： Charles H. Joyner , Fred A. Kish, Jr. , Frank H. Peters , Atul Mathur , David F. Welch , Andrew G. Dentai , Damien Lambert , Richard P. Schneider , Mark J. Missey
IPC分类号： G02B6/12
CPC分类号： H01S5/06258 , G02B6/12019 , G02B6/12033 , H01S5/026 , H01S5/0265 , H01S5/106 , H01S5/12 , H01S5/204 , H01S5/205 , H01S5/22 , H01S5/4031
摘要： A monolithic photonic integrated circuit (PIC) chip where the active waveguide cores of the modulated sources of the PIC are multiple quantum wells (MQWs) and the passive waveguide cores of an optical combiner are a bulk layer or material. The cores of the waveguide cores may be a quaternary such as InGaAsP or InAlGaAs.
摘要翻译：单片光子集成电路（PIC）芯片，其中PIC的调制源的有源波导核心是多个量子阱（MQW），并且光学组合器的无源波导核心是体层或材料。波导芯的芯可以是诸如InGaAsP或InAlGaAs的四元体。

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