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1. 发明授权

US6147381A Field effect-controllable semiconductor component 有权
标题翻译：场效应可控半导体元件
公开(公告)号：US6147381A
公开(公告)日：2000-11-14
申请号：US187501
申请日：1998-11-06
申请人： Franz Hirler , Frank Pfirsch , Wolfgang Werner
发明人： Franz Hirler , Frank Pfirsch , Wolfgang Werner
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/739 , H01L29/72
CPC分类号： H01L29/0623 , H01L29/0619 , H01L29/7395 , H01L29/0847
摘要： A field effect-controllable semiconductor component, such as a new IGBT using planar technology, includes a shielding zone disposed about a base zone, resulting in elevation of a minority charge carrier density at a cathode side of the IGBT, leading to a reduction of forward voltage. The effect of a drift field produced due to a concentration gradient between the shielding zone and the base zone is that the inner zone no longer acts as a sink for the minority charge carriers. In order to ensure that the breakdown voltage of the IGBT is not reduced by the incorporation of the shielding zone, a non-connected, floating region of high conductivity is disposed in the region of the inner zone. A lower edge of the non-connected, floating region is deeper in the inner zone than a lower edge of the shielding zone. The non-connected, floating region has a conduction type opposite that of the shielding zone and the inner zone.
摘要翻译：诸如使用平面技术的新型IGBT的场效应可控半导体部件包括围绕基极区设置的屏蔽区域，导致IGBT的阴极侧的少量电荷载流子密度升高，导致向前的减少电压。由于屏蔽区域和基极区域之间的浓度梯度而产生的漂移场的影响是内部区域不再充当少量电荷载流子的吸收器。为了确保IGBT的击穿电压不被并入屏蔽区域而降低，在内部区域中设置高导电性的非连接浮动区域。非连接的浮动区域的下边缘在内区域比屏蔽区域的下边缘更深。非连接的浮动区域具有与屏蔽区域和内部区域相反的导电类型。

2. 发明授权

US07655975B2 Power trench transistor 有权
标题翻译：功率沟槽晶体管
公开(公告)号：US07655975B2
公开(公告)日：2010-02-02
申请号：US11264756
申请日：2005-10-31
申请人： Franz Hirler , Wolfgang Werner , Markus Zundel , Frank Pfirsch
发明人： Franz Hirler , Wolfgang Werner , Markus Zundel , Frank Pfirsch
IPC分类号： H01L29/94
CPC分类号： H01L29/7811 , H01L29/0696 , H01L29/0878 , H01L29/407 , H01L29/42368 , H01L29/7813
摘要： A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.
摘要翻译：功率沟槽晶体管包括其中形成有单元阵列和围绕单元阵列的边缘区域的半导体本体。第一边缘沟槽形成在边缘区域内。第一边缘沟槽包含场电极，并且第一边缘沟槽的纵向取向从单元阵列朝向沟槽晶体管的边缘延伸。

3. 发明申请

US20060118864A1 Power trench transistor 有权
标题翻译：功率沟槽晶体管
公开(公告)号：US20060118864A1
公开(公告)日：2006-06-08
申请号：US11264756
申请日：2005-10-31
申请人： Franz Hirler , Wolfgang Werner , Markus Zundel , Frank Pfirsch
发明人： Franz Hirler , Wolfgang Werner , Markus Zundel , Frank Pfirsch
IPC分类号： H01L29/76
CPC分类号： H01L29/7811 , H01L29/0696 , H01L29/0878 , H01L29/407 , H01L29/42368 , H01L29/7813
摘要： A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.
摘要翻译：功率沟槽晶体管包括其中形成有单元阵列和围绕单元阵列的边缘区域的半导体本体。第一边缘沟槽形成在边缘区域内。第一边缘沟槽包含场电极，并且第一边缘沟槽的纵向取向从单元阵列朝向沟槽晶体管的边缘延伸。

4. 发明授权

US08482062B2 Semiconductor device having a floating semiconductor zone 有权
标题翻译：具有浮动半导体区的半导体器件
公开(公告)号：US08482062B2
公开(公告)日：2013-07-09
申请号：US13610240
申请日：2012-09-11
申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
发明人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
摘要翻译：半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性。通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。

5. 发明授权

US08461648B2 Semiconductor component with a drift region and a drift control region 有权
公开(公告)号：US08461648B2
公开(公告)日：2013-06-11
申请号：US11996906
申请日：2006-07-27
申请人： Frank Pfirsch , Anton Mauder , Armin Willmeroth , Hans-Joachim Schulze , Stefan Sedlmaier , Markus Zundel , Franz Hirler , Arunjai Mittal
发明人： Frank Pfirsch , Anton Mauder , Armin Willmeroth , Hans-Joachim Schulze , Stefan Sedlmaier , Markus Zundel , Franz Hirler , Arunjai Mittal
IPC分类号： H01L29/732
CPC分类号： H01L29/7803 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4916 , H01L29/66734 , H01L29/7802 , H01L29/7804 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

6. 发明授权

US08334564B2 Field plate trench transistor and method for producing it 有权
标题翻译：场板沟槽晶体管及其制造方法
公开(公告)号：US08334564B2
公开(公告)日：2012-12-18
申请号：US12984253
申请日：2011-01-04
申请人： Franz Hirler , Walter Rieger , Thorsten Meyer , Wolfgang Klein , Frank Pfirsch
发明人： Franz Hirler , Walter Rieger , Thorsten Meyer , Wolfgang Klein , Frank Pfirsch
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L27/04 , H01L27/0727 , H01L29/0696 , H01L29/0878 , H01L29/404 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/732 , H01L29/735 , H01L29/7803 , H01L29/7808 , H01L29/861
摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.
摘要翻译：具有半导体本体的场板沟槽晶体管。在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

7. 发明申请

US20110215858A1 CONTROLLING THE RECOMBINATION RATE IN A BIPOLAR SEMICONDUCTOR COMPONENT 有权
标题翻译：控制双极半导体元件的重构速率
公开(公告)号：US20110215858A1
公开(公告)日：2011-09-08
申请号：US12718381
申请日：2010-03-05
申请人： Anton Mauder , Franz Hirler , Frank Pfirsch , Hans-Joachim Schulze
发明人： Anton Mauder , Franz Hirler , Frank Pfirsch , Hans-Joachim Schulze
IPC分类号： H03K17/0412 , H01L29/739
CPC分类号： H01L29/739 , H03K17/0412
摘要： Disclosed is a method for controlling the recombination rate in the base region of a bipolar semiconductor component, and a bipolar semiconductor component.
摘要翻译：公开了一种用于控制双极半导体部件和双极型半导体部件的基极区域中的复合率的方法。

8. 发明授权

US09018674B2 Reverse conducting insulated gate bipolar transistor 有权
标题翻译：反向导通绝缘栅双极晶体管
公开(公告)号：US09018674B2
公开(公告)日：2015-04-28
申请号：US13441364
申请日：2012-04-06
申请人： Dorothea Werber , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze , Franz Hirler , Alexander Philippou
发明人： Dorothea Werber , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze , Franz Hirler , Alexander Philippou
IPC分类号： H01L29/739 , H01L29/06 , H01L29/08
CPC分类号： H01L29/7396 , H01L29/0696 , H01L29/0834
摘要： A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type and a second region of a second conductivity type subsequently arranged along a first direction parallel to the second side. The semiconductor device further includes an electrode at the second side adjoining the first and second regions. The semiconductor device further includes a third region of the second conductivity type arranged between the drift zone and the first region. The third region is spaced apart from the second region and from the second side.
摘要翻译：半导体包括布置在半导体主体的第一侧和第二侧之间的第一导电类型的漂移区。半导体器件还包括第一导电类型的第一区域和沿着平行于第二侧面的第一方向布置的第二导电类型的第二区域。半导体器件还包括邻近第一和第二区域的第二侧的电极。半导体器件还包括布置在漂移区和第一区之间的第二导电类型的第三区。第三区域与第二区域和第二区域隔开。

9. 发明授权

US08247874B2 Depletion MOS transistor and charging arrangement 有权
标题翻译：消耗MOS晶体管和充电布置
公开(公告)号：US08247874B2
公开(公告)日：2012-08-21
申请号：US12868918
申请日：2010-08-26
申请人： Franz Hirler , Anton Mauder , Joachim Weyers , Frank Pfirsch
发明人： Franz Hirler , Anton Mauder , Joachim Weyers , Frank Pfirsch
IPC分类号： H01L27/088
CPC分类号： H01L29/7813 , H01L21/823487 , H01L27/0629 , H01L27/0883 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/4238 , H01L29/7803 , H01L29/7828
摘要： A depletion transistor includes a source region and a drain region of a first conductivity type, a channel region of the first conductivity type arranged between the source region and the drain region and a first gate electrode arranged adjacent the channel region and dielectrically insulated from the channel region by a gate dielectric. The depletion transistor further includes a first discharge region of a second conductivity type arranged adjacent the gate dielectric and electrically coupled to a terminal for a reference potential. The depletion transistor can be included in a charging circuit.
摘要翻译：耗尽型晶体管包括源区和漏区，第一导电类型，第一导电类型的沟道区域布置在源区和漏区之间，第一栅电极邻近沟道区设置并与沟道介电绝缘区域。耗尽晶体管还包括第二导电类型的第一放电区域，其布置成邻近栅极电介质并且电耦合到用于参考电位的端子。耗尽晶体管可以包括在充电电路中。

10. 发明授权

US07943987B2 Semiconductor component with a drift zone and a drift control zone 有权
标题翻译：具有漂移区和漂移控制区的半导体元件
公开(公告)号：US07943987B2
公开(公告)日：2011-05-17
申请号：US11874591
申请日：2007-10-18
申请人： Armin Willmeroth , Anton Mauder , Franz Hirler , Stefan Sedlmaier , Frank Pfirsch
发明人： Armin Willmeroth , Anton Mauder , Franz Hirler , Stefan Sedlmaier , Frank Pfirsch
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/7804
摘要： A semiconductor component has a drift zone and a drift control zone, a drift control zone dielectric, which is arranged in sections between the drift zone and the drift control zone, and has a first and a second connection zone, which are doped complementarily with respect to one another and which form a pn junction between the drift control zone and a section of the drift zone.
摘要翻译：半导体部件具有漂移区和漂移控制区，漂移控制区电介质，其布置在漂移区和漂移控制区之间的部分中，并且具有第一和第二连接区，其相互掺杂互补并且在漂移控制区域和漂移区段的一部分之间形成pn结。

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