专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07993949B2 Heterogeneous substrate including a sacrificial layer, and a method of fabricating it 有权
标题翻译：包括牺牲层的非均相基板及其制造方法
公开(公告)号：US07993949B2
公开(公告)日：2011-08-09
申请号：US12488854
申请日：2009-06-22
申请人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
发明人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
IPC分类号： H01L21/02
CPC分类号： B81C1/00595 , B81B2201/0271 , B81C2201/0109 , B81C2201/014
摘要： The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making: e) at least one opening in the first and/or second portion and the first and/or second layer of SiGe so as to reach the layer of Si; and f) eliminating all or part of the layer of Si.
摘要翻译：本发明涉及一种从包含至少一种单晶材料中的第一和第二部分的异质衬底制备组分的方法，以及由位于两层单晶之间的至少一层单晶硅的至少一个叠层构成的牺牲层 SiGe，堆叠设置在单晶材料的第一和第二部分之间，其中该方法包括通过以下步骤蚀刻所述堆叠：e）在第一和/或第二部分中的至少一个开口，以及第一和/ SiGe，以达到Si层; 和f）消除Si的全部或部分层。

2. 发明申请

US20090325335A1 HETEROGENEOUS SUBSTRATE INCLUDING A SACRIFICIAL LAYER, AND A METHOD OF FABRICATING IT 有权
标题翻译：异质基底包括一个非常复杂的层，以及一种制造它的方法
公开(公告)号：US20090325335A1
公开(公告)日：2009-12-31
申请号：US12488854
申请日：2009-06-22
申请人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
发明人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
IPC分类号： H01L21/302 , H01L21/02
CPC分类号： B81C1/00595 , B81B2201/0271 , B81C2201/0109 , B81C2201/014
摘要： The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making: e) at least one opening in the first and/or second portion and the first and/or second layer of SiGe so as to reach the layer of Si; and f) eliminating all or part of the layer of Si.
摘要翻译：本发明涉及一种从包含至少一种单晶材料中的第一和第二部分的异质衬底制备组分的方法，以及由位于两层单晶之间的至少一层单晶硅的至少一个叠层构成的牺牲层 SiGe，堆叠设置在单晶材料的第一和第二部分之间，其中该方法包括通过以下步骤蚀刻所述堆叠：e）在第一和/或第二部分中的至少一个开口，以及第一和/ SiGe，以达到Si层; 和f）消除Si的全部或部分层。

3. 发明授权

US07906439B2 Method of fabricating a MEMS/NEMS electromechanical component 有权
标题翻译：制造MEMS / NEMS机电元件的方法
公开(公告)号：US07906439B2
公开(公告)日：2011-03-15
申请号：US12488898
申请日：2009-06-22
申请人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
发明人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B81C1/00507 , B81B2201/0271 , B81C2201/0115 , B81C2201/0136 , B81C2201/0177 , B81C2203/0136 , B81C2203/0145 , H03H3/0072 , H03H9/175 , H03H9/2436 , Y10S438/933
摘要： The invention provides a method of fabricating and electromechanical device having an active element on at least one substrate, the method having the steps of: a) making a heterogeneous substrate having a first portion, an interface layer, and a second portion, the first portion including one or more buried zones sandwiched between first and second regions formed in a first monocrystalline material, the first region extending to the surface of the first portion, and the second region extending to the interface layer, at least one said buried zone being made at least in part out of a second monocrystalline material so as to make it selectively attackable relative to the first and second regions; b) making openings from the surface of the first portion and through the first region, which openings open out to at least one said buried zone; and c) etching at least part of at least one buried zone to form at least one cavity so as to define at least one active element that is at least a portion of the second region between said cavity and said interface layer; wherein the first and second portions of the substrate are constituted respectively from first and second substrates that are assembled together by bonding, at least one of them including at least one said interface layer over at least a fraction of its surface.
摘要翻译：本发明提供一种在至少一个基板上具有有源元件的制造方法和机电装置，该方法具有以下步骤：a）制造具有第一部分，界面层和第二部分的非均相基底，第一部分包括夹在形成于第一单晶材料中的第一和第二区域之间的一个或多个掩埋区域，第一区域延伸到第一部分的表面，第二区域延伸到界面层，至少一个所述掩埋区域至少部分地由第二单晶材料制成，以使其相对于第一和第二区域选择性地具有攻击性; b）从所述第一部分的表面和所述第一区域制造开口，所述第一区域开放到至少一个所述掩埋区域; 以及c）蚀刻至少一个掩埋区域的至少一部分以形成至少一个空腔，以便限定至少一个有源元件，所述至少一个有源元件是所述腔和所述界面层之间的第二区域的至少一部分; 其中所述基板的第一和第二部分分别由通过粘接而组装在一起的第一和第二基板构成，其中至少一个在其表面的至少一部分上包括至少一个所述界面层。

4. 发明申请

US20100029031A1 METHOD OF FABRICATING A MEMS/NEMS ELECTROMECHANICAL COMPONENT 有权
标题翻译：制造MEMS / NEMS电子元件的方法
公开(公告)号：US20100029031A1
公开(公告)日：2010-02-04
申请号：US12488898
申请日：2009-06-22
申请人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
发明人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
IPC分类号： H01L21/18
CPC分类号： B81C1/00507 , B81B2201/0271 , B81C2201/0115 , B81C2201/0136 , B81C2201/0177 , B81C2203/0136 , B81C2203/0145 , H03H3/0072 , H03H9/175 , H03H9/2436 , Y10S438/933
摘要： The invention relates to a method of fabricating and electromechanical device on at least one substrate, the device including at least one active element and wherein the method comprises: a) making a heterogeneous substrate comprising a first portion, an interface layer, and a second portion, the first portion including one or more buried zones sandwiched between first and second regions formed in a first monocrystalline material, the first region extending to the surface of the first portion, and the second region extending to the interface layer, at least one said buried zone being made at least in part out of a second monocrystalline material so as to make it selectively attackable relative to the first and second regions; b) making openings from the surface of the first portion and through the first region, which openings open out to at least one said buried zone; and c) etching at least part of at least one buried zone to form at least one cavity so as to define at least one active element that is at least a portion of the second region between a said cavity and said interface layer; and wherein the first and second portions of the substrate are constituted respectively from first and second substrates that are assembled together by bonding, at least one of them including at least one said interface layer over at least a fraction of its surface.
摘要翻译：本发明涉及在至少一个基板上制造和机电装置的方法，所述装置包括至少一个有源元件，并且其中所述方法包括：a）制造包含第一部分，界面层和第二部分，所述第一部分包括被夹在形成于第一单晶材料中的第一和第二区域之间的一个或多个掩埋区域，所述第一区域延伸到所述第一部分的表面，并且所述第二区域延伸到所述界面层，所述第二区域延伸至所述界面层，区域至少部分地由第二单晶材料制成，以使其相对于第一和第二区域选择性地被破坏; b）从所述第一部分的表面和所述第一区域制造开口，所述第一区域开放到至少一个所述掩埋区域; 以及c）蚀刻至少一个掩埋区的至少一部分以形成至少一个空腔，以便限定至少一个有源元件，所述至少一个有源元件是所述空腔和所述界面层之间的所述第二区域的至少一部分; 并且其中所述基底的第一和第二部分分别由通过粘合而组装在一起的第一和第二基底构成，其中至少一个在其表面的至少一部分上包括至少一个所述界面层。

5. 发明申请

US20090317931A1 METHOD OF FABRICATING AN ELECTROMECHANICAL DEVICE INCLUDING AT LEAST ONE ACTIVE ELEMENT 有权
标题翻译：制造包括至少一个活动元件的电气设备的方法
公开(公告)号：US20090317931A1
公开(公告)日：2009-12-24
申请号：US12488882
申请日：2009-06-22
申请人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
发明人： François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
IPC分类号： H01L29/84
CPC分类号： B81C1/00238 , B81B2201/0271 , B81C1/00357 , B81C2201/0115 , B81C2201/014 , B81C2201/0191
摘要： The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps:a) making a monocrystalline first stop layer on a monocrystalline layer of a first substrate;b) growing a monocrystalline mechanical layer epitaxially on said first stop layer out of at least one material that is different from that of the stop layer;c) making a sacrificial layer on said active layer out of a material that is suitable for being etched selectively relative to said mechanical layer;d) making a bonding layer on the sacrificial layer;e) bonding a second substrate on the bonding layer; andf) eliminating the first substrate and the stop layer to reveal the surface of the mechanical layer opposite from the sacrificial layer, the active element being made by at least a portion of the mechanical layer.
摘要翻译：本发明涉及一种制造包括有源元件的机电装置的方法，其中该方法包括以下步骤：a）在第一衬底的单晶层上制备单晶第一阻挡层; b）在所述第一停止层上外延生长至少一种不同于所述停止层的材料的单晶机械层; c）在适合于相对于所述机械层选择性蚀刻的材料中在所述有源层上制造牺牲层; d）在牺牲层上形成结合层; e）在接合层上粘合第二衬底; 以及f）消除所述第一衬底和所述阻挡层以露出与所述牺牲层相对的所述机械层的表面，所述有源元件由所述机械层的至少一部分制成。

6. 发明申请

US20090321887A1 METHOD OF FABRICATING AN ELECTROMECHANICAL STRUCTURE INCLUDING AT LEAST ONE MECHANICAL REINFORCING PILLAR 审中-公开
标题翻译：制造一个机械结构的机械结构的方法，包括一个机械增强支柱
公开(公告)号：US20090321887A1
公开(公告)日：2009-12-31
申请号：US12488841
申请日：2009-06-22
申请人： Vincent Larrey , François Perruchot , Bernard Diem , Laurent Clavelier , Philippe Robert
发明人： Vincent Larrey , François Perruchot , Bernard Diem , Laurent Clavelier , Philippe Robert
IPC分类号： H01L21/30 , H01L23/58
CPC分类号： H01L29/66007 , B81B2201/0264 , B81C1/00357 , B81C1/00682 , B81C2201/019 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method of fabricating an electromechanical structure presenting a first substrate (1) including at least one layer (1′) of monocrystalline material covered in a sacrificial layer (2) that presents a free surface, the structure presenting at least one mechanical reinforcing pillar received in said sacrificial layer, the method being characterized in that it comprises: a) making at least one well region (51, 52) in the sacrificial layer (2) by etching, at least in the entire thickness of the sacrificial layer (2), the well region defining at least one said mechanical pillar; b) depositing a first functionalization layer (4, 31) of a first material, relative to which the sacrificial layer is suitable for being etched selectively, the functionalization layer (4) filling at least one well region (51) at least partially and covering the free surface of the sacrificial layer (2) at least around the well region(s); and b′) depositing a filler layer (6, 32) of a second material different from the first material for terminating the filling of the well region(s) (5′), said filler layer (6) covering the first functionalization layer (4) at least in part around the well region(s) (5′), and planarizing the filler layer (6, 32), the pillar(s) being formed by the superposition of at least the first material and the second material in the well region(s); and releasing the electromechanical structure by removing at least partially the sacrificial layer (2). The invention also relates to an electromechanical structure obtained by the method.
摘要翻译：本发明涉及一种制造机电结构的方法，所述机电结构呈现第一衬底（1），所述第一衬底（1）包括覆盖在呈现自由表面的牺牲层（2）中的至少一层单晶材料层（1'），所述结构呈现至少一个所述方法的特征在于：其包括：a）至少在所述牺牲层的整个厚度中通过蚀刻在所述牺牲层（2）中制造至少一个阱区域（51,52）层（2），所述阱区限定至少一个所述机械支柱; b）沉积第一材料的第一官能化层（4,31），所述第一材料相对于所述第一材料，所述第一材料相对于所述第一材料，所述牺牲层适于被选择性地蚀刻，所述官能化层（4）至少部分填充至少一个阱区域（51）并且覆盖所述牺牲层（2）的至少围绕所述阱区域的自由表面; 和b'）沉积与所述第一材料不同的第二材料的填充层（6,32），以终止所述阱区域（5'）的填充，所述填充层（6）覆盖所述第一官能化层（ 4）至少部分地围绕所述阱区域（5'）周围，并且平坦化所述填充层（6,32），所述柱通过至少所述第一材料和所述第二材料的叠加形成井区; 以及通过至少部分去除所述牺牲层（2）来释放所述机电结构。本发明还涉及通过该方法获得的机电结构。

7. 发明授权

US08004154B2 Piezoelectric actuation structure including an integrated piezoresistive strain gauge and its production method 有权
标题翻译：包括压电应变计的压电致动结构及其制造方法
公开(公告)号：US08004154B2
公开(公告)日：2011-08-23
申请号：US12898292
申请日：2010-10-05
申请人： Matthieu Cueff , Emmanuel Defay , François Perruchot , Patrice Rey
发明人： Matthieu Cueff , Emmanuel Defay , François Perruchot , Patrice Rey
IPC分类号： H01L41/08
CPC分类号： H01L41/094 , H01L41/0825 , H01L41/29 , H01L41/318 , H01L41/332 , Y10T29/42
摘要： The invention relates to a piezoelectric actuation structure including at least one strain gauge and at least one actuator produced from a stack on the surface of a substrate of at least one layer of piezoelectric material arranged between a bottom electrode layer and a top electrode layer, at least a portion of the stack forming the actuator being arranged above a cavity produced in the substrate, characterized in that the strain gauge is a piezoresistive gauge located in the top electrode layer and/or the bottom electrode layer, the layer or layers including electrode discontinuities making it possible to produce said piezoresistive gauge. The invention also relates to a method for producing such a structure.
摘要翻译：本发明涉及一种压电致动结构，其包括至少一个应变计和至少一个致动器，其由布置在底部电极层和顶部电极层之间的至少一层压电材料层的衬底的表面上的堆叠产生，形成致动器的堆的至少一部分被布置在衬底中产生的腔的上方，其特征在于应变计是位于顶电极层和/或底电极层中的压阻计，所述层包括电极不连续使得可以制造所述压阻计。本发明还涉及这种结构的制造方法。

8. 发明申请

US20110233693A1 ELECTROMECHANICAL TRANSDUCER DEVICE AND METHOD OF FORMING A ELECTROMECHANICAL TRANSDUCER DEVICE 有权
标题翻译：机电传感器装置及形成机电传感器装置的方法
公开(公告)号：US20110233693A1
公开(公告)日：2011-09-29
申请号：US13128035
申请日：2009-11-25
申请人： François Perruchot , Emmanuel Defay , Patrice Rey , Lianjun Liu , Sergio Pacheco
发明人： François Perruchot , Emmanuel Defay , Patrice Rey , Lianjun Liu , Sergio Pacheco
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81B3/0072 , B81B2201/032 , H01L41/0933 , H01L41/094
摘要： A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.
摘要翻译：形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而是可移动的。可移动结构包括机械结构，其包括具有第一热响应特性和第一机械应力响应特性的至少一个机械层，所述致动结构的至少一层，所述至少一层具有与第一热响应特性和与第一机械应力响应特性不同的第二机械应力响应特性，具有第三热响应特性和第三机械应力特性的第一补偿层，以及具有第四热响应特性的第二补偿层和第四机械应力响应特性。第一和第二补偿层布置成补偿由机械结构和致动结构的至少一个层的不同的第一和第二热响应特性产生的热效应，使得可移动结构的移动基本上与并且调节由所述机械结构和所述致动结构的所述至少一个层的不同的第一和第二应力响应特性产生的应力效应，使得当所述机电换能器装置处于非活动状态。

9. 发明申请

US20100190301A1 CAVITY CLOSURE PROCESS FOR AT LEAST ONE MICROELECTRONIC DEVICE 有权
标题翻译：用于至少一个微电子设备的密封闭合过程
公开(公告)号：US20100190301A1
公开(公告)日：2010-07-29
申请号：US12693867
申请日：2010-01-26
申请人： Gilles DELAPIERRE , Bernard Diem , François Perruchot
发明人： Gilles DELAPIERRE , Bernard Diem , François Perruchot
IPC分类号： H01L21/60 , H01L21/56
CPC分类号： B81C1/00293 , B81C2203/0145 , G01P1/023 , G01P15/0802 , H01L23/10 , H01L2924/0002 , H01L2924/00
摘要： A process for closure of at least one cavity intended to encapsulate or be part of a microelectronic device, comprising the following steps: a) Producing a cavity in a first substrate comprising a first layer traversed by an opening forming an access to the cavity; b) Producing a portion of bond material around the opening, on a surface of the first layer located on the side opposite the cavity; c) Producing, on a second substrate, a portion of fusible material, with a deposition of the fusible material on the second substrate and the use of a mask; d) Placing the portion of fusible material in contact with the portion of bond material; e) Forming a plug for the opening, which adheres to the portion of bond material, by melting and then solidification of the fusible material; f) Separating the plug and the second substrate.
摘要翻译：用于封闭旨在封装或成为微电子器件的一部分的至少一个空腔的方法，包括以下步骤：a）在第一衬底中产生空腔，该第一衬底包括由开口形成的第一层，形成对腔的通路; b）在位于与空腔相对的一侧的第一层的表面上，在开口周围产生粘合材料的一部分; c）在第二基板上产生可熔材料的一部分，在第二基板上沉积可熔材料并使用掩模; d）将可熔材料的一部分放置在与粘合材料部分接触的位置; e）通过熔化然后固化可熔材料，形成粘合到粘合材料部分上的开口的塞子; f）分离插头和第二基板。

10. 发明授权

US06454720B1 System for measuring physical parameters with a medical probe 失效
标题翻译：用医用探头测量物理参数的系统
公开(公告)号：US06454720B1
公开(公告)日：2002-09-24
申请号：US09674833
申请日：2000-12-15
申请人： Jean-Frédéric Clerc , François Perruchot , Stéphane Renard
发明人： Jean-Frédéric Clerc , François Perruchot , Stéphane Renard
IPC分类号： A61B500
CPC分类号： A61B5/0215 , A61B5/0002
摘要： The present invention relates to a system for measuring at least one physical parameter in a place in a patient's body to which a medical probe has access, comprising a medical probe (1) equipped with a sensor of said parameter and means for emitting an electrical signal that represents said parameter and that is received by the sensor, to a data processing device outside the patient's body. In this system: said probe (1) consists of a rod (2) comprising fastening means (3) to an electronic measuring unit (41, 42), the sensor of said parameter is included in the electronic measurement unit (41, 42) that also includes other parts consisting of electronic means associated with the sensor to provide a measurement signal, means for remote transmission of the measurement signal, power supply means for said parts, the measurement unit (41, 42) also comprising additional fastening means besides those of the rod (2) of the probe (1), the means for emitting an electric signal representing said parameter to the data processing device are receiver means positioned such that they are capable of receiving the measurement signal emitted by the remote transmission means.
摘要翻译：本发明涉及一种用于测量医疗探针具有接入的患者体内的位置中的至少一个物理参数的系统，包括配备有所述参数的传感器的医疗探针（1）和用于发射电信号的装置其表示所述参数，并且由传感器接收到参数到患者体外的数据处理装置。在该系统中，所述探头（1）包括一个包括紧固装置（3）到电子测量单元（41,42）的杆（2），所述参数的传感器包括在电子测量单元（41,42）中，其还包括由与传感器相关联的电子装置组成的其它部件，以提供测量信号，用于远程传输测量信号的装置，用于所述部件的电源装置，测量单元还包括除了那些（1）的杆（2）的发射装置，用于向数据处理装置发射表示所述参数的电信号的装置是被定位成使得它们能够接收由远程传输装置发射的测量信号的接收装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式