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1. 发明授权

US08348869B2 Upper limbs rehabilitation device 有权
标题翻译：上肢康复装置
公开(公告)号：US08348869B2
公开(公告)日：2013-01-08
申请号：US12850212
申请日：2010-08-04
申请人： Fong-Chin Su , Wei-Jr Lin , Chih-Han Chang , Li-Chieh Kuo , Cheng-Chun Chen , Chung-Ying Tsai
发明人： Fong-Chin Su , Wei-Jr Lin , Chih-Han Chang , Li-Chieh Kuo , Cheng-Chun Chen , Chung-Ying Tsai
IPC分类号： A61H1/00
CPC分类号： A61H1/0281 , A61H2201/0176 , A61H2201/5061 , A63B21/00069 , A63B21/00181 , A63B21/015 , A63B21/4035 , A63B21/4045 , A63B23/03508 , A63B23/1245 , A63B23/1263
摘要： An upper limbs rehabilitation device includes a main body, a rail, a movable member and a grip, wherein the main body has a first link and a second link pivotably connected to the first link. The rail is connected to the second link. The user holds the grip that is pivotably connected to the movable member and swings the upper limb to move the movable member along the rail so as to exercise the upper limb in multiple degrees of freedom.
摘要翻译：上肢康复装置包括主体，轨道，可动构件和把手，其中主体具有第一连杆和可枢转地连接到第一连杆的第二连杆。轨道连接到第二个链路。使用者握住可枢转地连接到可动构件的把手，并使上肢摆动，沿着轨道移动可移动构件，以便以多个自由度运动上肢。

2. 发明申请

US20120035512A1 UPPER LIMBS REHABILITATION DEVICE 有权
标题翻译：上肢修复装置
公开(公告)号：US20120035512A1
公开(公告)日：2012-02-09
申请号：US12850212
申请日：2010-08-04
申请人： Fong-Chin SU , Wei-Jr Lin , Chih-Han Chang , Li-Chieh Kuo , Cheng-Chun Chen , Chung-Ying Tsai
发明人： Fong-Chin SU , Wei-Jr Lin , Chih-Han Chang , Li-Chieh Kuo , Cheng-Chun Chen , Chung-Ying Tsai
IPC分类号： A61H1/02
CPC分类号： A61H1/0281 , A61H2201/0176 , A61H2201/5061 , A63B21/00069 , A63B21/00181 , A63B21/015 , A63B21/4035 , A63B21/4045 , A63B23/03508 , A63B23/1245 , A63B23/1263
摘要： An upper limbs rehabilitation device includes a main body, a rail, a movable member and a grip, wherein the main body has a first link and a second link pivotably connected to the first link. The rail is connected to the second link. The user holds the grip that is pivotably connected to the movable member and swings the upper limb to move the movable member along the rail so as to exercise the upper limb in multiple degrees of freedom.
摘要翻译：上肢康复装置包括主体，轨道，可动构件和把手，其中主体具有第一连杆和可枢转地连接到第一连杆的第二连杆。轨道连接到第二个链路。使用者握住可枢转地连接到可动构件的把手，并使上肢摆动，沿着轨道移动可移动构件，以便以多个自由度锻炼上肢。

3. 发明申请

US20050059207A1 METHOD FOR FORMING A DEEP TRENCH CAPACITOR BURIED PLATE 有权
标题翻译：形成深层电容电容板的方法
公开(公告)号：US20050059207A1
公开(公告)日：2005-03-17
申请号：US10605234
申请日：2003-09-17
申请人： Chih-Han Chang , Hsin-Jung Ho , Chang-Rong Wu , Chien-Jung Sun
发明人： Chih-Han Chang , Hsin-Jung Ho , Chang-Rong Wu , Chien-Jung Sun
IPC分类号： H01L21/20 , H01L21/8242
CPC分类号： H01L27/1087
摘要： A method for forming a deep trench capacitor buried plate. A substrate having a pad oxide and a pad nitride is provided. A deep trench is formed in the substrate. A doped silicate film is deposited on a sidewall of the deep trench. A sacrificial layer is deposited in the deep trench, and etched back to expose parts of the doped silicate film. Then, an etching process is performed to remove the exposed doped silicate film and parts of the pad oxide for forming a recess. The sacrificial layer is removed. A silicon nitride layer is deposited to fill the recess and to cover the doped silicate film. Finally, a thermal oxidation process is performed to form a doped ion region. The silicon nitride layer is removed. The doped silicate film is removed.
摘要翻译：一种形成深沟槽电容器掩埋板的方法。提供具有衬垫氧化物和衬垫氮化物的衬底。在衬底中形成深沟槽。掺杂的硅酸盐膜沉积在深沟槽的侧壁上。牺牲层沉积在深沟槽中，并被回蚀以暴露部分掺杂的硅酸盐膜。然后，进行蚀刻处理以去除暴露的掺杂硅酸盐膜和用于形成凹槽的衬垫氧化物的一部分。牺牲层被去除。沉积氮化硅层以填充凹部并覆盖掺杂的硅酸盐膜。最后，进行热氧化工艺以形成掺杂的离子区域。去除氮化硅层。去除掺杂的硅酸盐膜。

4. 发明授权

US06537872B1 Method of fabricating a DRAM cell capacitor 有权
标题翻译：制造DRAM单元电容器的方法
公开(公告)号：US06537872B1
公开(公告)日：2003-03-25
申请号：US10126094
申请日：2002-04-19
申请人： Li-Wu Tsao , Chih-Han Chang
发明人： Li-Wu Tsao , Chih-Han Chang
IPC分类号： H01L218242
CPC分类号： H01L27/1087 , H01L27/10864 , H01L28/84
摘要： A method of fabricating a capacitor of a DRAM cell. First, an insulating layer is formed on the semiconductor substrate at the top portion of the trench. Afterward, a seed layer on the ringed insulating layer and the semiconductor substrate at the bottom portion of the trench. A photoresist is coated in the trench at the bottom portion. Next, the seed layer is partially removed to expose the ringed insulating layer while the photoresist is used as the shield. The photoresist is then removed to expose the remaining seed layer at the bottom portion. A hemispherical silicon grain layer is deposited from the remaining seed layer on the semiconductor substrate. Ions are doped the hemispherical silicon grain layer and the semiconductor substrate so as to create a doped area to serve as the lower electrode of the capacitor.
摘要翻译：一种制造DRAM单元的电容器的方法。首先，在沟槽顶部的半导体衬底上形成绝缘层。之后，环状绝缘层上的种子层和沟槽底部的半导体衬底。在底部的沟槽中涂覆有光致抗蚀剂。接下来，种子层被部分地去除以暴露环状绝缘层，同时使用光致抗蚀剂作为屏蔽。然后去除光致抗蚀剂以在底部露出剩余的种子层。从半导体衬底上的剩余种子层沉积半球状硅晶粒层。离子掺杂半球形硅晶粒层和半导体衬底，以便产生用作电容器的下电极的掺杂区域。

5. 发明授权

US06365506B1 Dual-damascene process with porous low-K dielectric material 有权
标题翻译：双镶嵌工艺与多孔低K电介质材料
公开(公告)号：US06365506B1
公开(公告)日：2002-04-02
申请号：US09859762
申请日：2001-05-17
申请人： Chih-Han Chang , Hsin-Chuan Tsai
发明人： Chih-Han Chang , Hsin-Chuan Tsai
IPC分类号： H01L214763
CPC分类号： H01L21/76811 , H01L21/76813 , H01L21/7682
摘要： This invention relates to a dual damascene process with porous low-k dielectric material. A first insulating layer is formed on a porous low-k dielectric layer. The first insulating layer has a first pattern for defining a first opening in the low-k dielectric layer. Also, the invention includes the step of forming a second insulating layer on the first insulating layer. Both the first insulating layer and the second insulating layer are used as a hard mask, the two insulating layers being of different materials. The second insulating layer has a second pattern for defining a second opening in the low-k dielectric layer. Then, at least one etch is performed to form a dual damascene structure in the porous low-k dielectric layer by the different insulating layers which cause different protection time in etching the porous low-k dielectric layer.
摘要翻译：本发明涉及具有多孔低k电介质材料的双镶嵌工艺。在多孔低k电介质层上形成第一绝缘层。第一绝缘层具有用于限定低k电介质层中的第一开口的第一图案。此外，本发明包括在第一绝缘层上形成第二绝缘层的步骤。第一绝缘层和第二绝缘层都用作硬掩模，两个绝缘层是不同的材料。第二绝缘层具有用于限定低k电介质层中的第二开口的第二图案。然后，通过不同的绝缘层在多孔低k电介质层中进行至少一次蚀刻以形成多孔低k电介质层中的双镶嵌结构，这在蚀刻多孔低k电介质层时引起不同的保护时间。

6. 发明授权

US08911482B2 Interlocking bone plate system 有权
标题翻译：联锁骨板系统
公开(公告)号：US08911482B2
公开(公告)日：2014-12-16
申请号：US13418668
申请日：2012-03-13
申请人： Cheng-Hung Lee , Chih-Han Chang , Chih-Kun Hsiao , Kui-Chou Huang , Chih-Hui Chen
发明人： Cheng-Hung Lee , Chih-Han Chang , Chih-Kun Hsiao , Kui-Chou Huang , Chih-Hui Chen
IPC分类号： A61B17/80 , A61B17/58 , A61B17/72 , A61B17/86
CPC分类号： A61B17/7283 , A61B17/8057 , A61B17/8061 , A61B17/8605 , A61B17/8625
摘要： An interlocking bone plate system includes an outer bone plate for being arranged outside a broken bone, an inner bone plate for being installed inside the medullary cavity of the broken bone, and screws for being inserted through and engaged with the outer bone plate and the broken bone and then engaged with the inner bone plate so as to interlock the out and inner bone plates together. The inner bone plate provides an added support in addition to the support provided by the outer bone plate, enhancing the structural strength of the whole bone fixation structure and lowering the risk of failed surgery.
摘要翻译：互锁骨板系统包括用于布置在骨骨外侧的外骨板，用于安装在破骨的髓腔内部的内骨板，以及用于插入并与外骨板接合的螺钉和破碎的骨骨，然后与内骨板接合，以将外骨板和内骨板互锁在一起。内骨板除了外骨板提供的支撑外，还增加了支撑，提高了整个骨固定结构的结构强度，降低了手术失败的风险。

7. 发明申请

US20130096630A1 INTERLOCKING BONE PLATE SYSTEM 有权
标题翻译：互锁骨板系统
公开(公告)号：US20130096630A1
公开(公告)日：2013-04-18
申请号：US13418668
申请日：2012-03-13
申请人： Cheng-Hung LEE , Chih-Han Chang , Chih-Kun Hsiao , Kui-Chou Huang , Chih-Hui Chen
发明人： Cheng-Hung LEE , Chih-Han Chang , Chih-Kun Hsiao , Kui-Chou Huang , Chih-Hui Chen
IPC分类号： A61B17/80
CPC分类号： A61B17/7283 , A61B17/8057 , A61B17/8061 , A61B17/8605 , A61B17/8625
摘要： An interlocking bone plate system includes an outer bone plate for being arranged outside a broken bone, an inner bone plate for being installed inside the medullary cavity of the broken bone, and screws for being inserted through and engaged with the outer bone plate and the broken bone and then engaged with the inner bone plate so as to interlock the out and inner bone plates together. The inner bone plate provides an added support in addition to the support provided by the outer bone plate, enhancing the structural strength of the whole bone fixation structure and lowering the risk of failed surgery.
摘要翻译：互锁骨板系统包括用于布置在骨骨外侧的外骨板，用于安装在破骨的髓腔内部的内骨板，以及用于插入并与外骨板接合的螺钉和破碎的骨骨，然后与内骨板接合，以将外骨板和内骨板互锁在一起。内骨板除了外骨板提供的支撑外，还增加了支撑，提高了整个骨固定结构的结构强度，降低了手术失败的风险。

8. 发明授权

US07232718B2 Method for forming a deep trench capacitor buried plate 有权
标题翻译：形成深沟槽电容器掩埋板的方法
公开(公告)号：US07232718B2
公开(公告)日：2007-06-19
申请号：US10605234
申请日：2003-09-17
申请人： Chih-Han Chang , Hsin-Jung Ho , Chang-Rong Wu , Chien-Jung Sun
发明人： Chih-Han Chang , Hsin-Jung Ho , Chang-Rong Wu , Chien-Jung Sun
IPC分类号： H01L21/8242
CPC分类号： H01L27/1087
摘要： A method for forming a deep trench capacitor buried plate. A substrate having a pad oxide and a pad nitride is provided. A deep trench is formed in the substrate. A doped silicate film is deposited on a sidewall of the deep trench. A sacrificial layer is deposited in the deep trench, and etched back to expose parts of the doped silicate film. Then, an etching process is performed to remove the exposed doped silicate film and parts of the pad oxide for forming a recess. The sacrificial layer is removed. A silicon nitride layer is deposited to fill the recess and to cover the doped silicate film. Finally, a thermal oxidation process is performed to form a doped ion region. The silicon nitride layer is removed. The doped silicate film is removed.
摘要翻译：一种形成深沟槽电容器掩埋板的方法。提供具有衬垫氧化物和衬垫氮化物的衬底。在衬底中形成深沟槽。掺杂的硅酸盐膜沉积在深沟槽的侧壁上。牺牲层沉积在深沟槽中，并被回蚀以暴露部分掺杂的硅酸盐膜。然后，进行蚀刻处理以去除暴露的掺杂硅酸盐膜和用于形成凹槽的衬垫氧化物的一部分。牺牲层被去除。沉积氮化硅层以填充凹部并覆盖掺杂的硅酸盐膜。最后，进行热氧化工艺以形成掺杂的离子区域。去除氮化硅层。去除掺杂的硅酸盐膜。

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