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1. 发明授权

US06759252B2 Method and device using titanium doped aluminum oxide for passivation of ferroelectric materials 失效
标题翻译：使用钛掺杂氧化铝钝化铁电材料的方法和器件
公开(公告)号：US06759252B2
公开(公告)日：2004-07-06
申请号：US10621850
申请日：2003-07-16
申请人： Fengyan Zhang , Sheng Teng Hsu , Hong Ying
发明人： Fengyan Zhang , Sheng Teng Hsu , Hong Ying
IPC分类号： H01L2102
CPC分类号： H01L28/55 , H01L21/02178 , H01L21/02186 , H01L21/02194 , H01L21/02266 , H01L21/02337 , H01L21/0234 , H01L21/31604 , H01L21/3162 , H01L21/67086 , H01L41/0533
摘要： A passivation layer comprises a titanium-doped aluminum oxide layer for passivation of ferroelectric materials such as Pt/SBt/Ir—Ta—O devices. The titanium-doped aluminum oxide layer for passivation of ferroelectric materials has reduced stress and improved passivation properties, and is easy to deposit and be oxidized. The passivation layer in the MFM Structure resists breakdown and peeling during annealing of the device in a forming gas ambient.
摘要翻译：钝化层包括用于钝化铁电材料例如Pt / SBt / Ir-Ta-O器件的钛掺杂氧化铝层。用于钝化铁电材料的钛掺杂氧化铝层具有减少的应力和改善的钝化性能，并且易于沉积并被氧化。 MFM结构中的钝化层在形成气体环境中抵抗器件退火过程中的击穿和剥离。

2. 发明授权

US06630702B2 Method of using titanium doped aluminum oxide for passivation of ferroelectric materials and devices including the same 有权
公开(公告)号：US06630702B2
公开(公告)日：2003-10-07
申请号：US09819546
申请日：2001-03-27
申请人： Fengyan Zhang , Sheng Teng Hsu , Hong Ying
发明人： Fengyan Zhang , Sheng Teng Hsu , Hong Ying
IPC分类号： H01L27108
CPC分类号： H01L28/55 , H01L21/02178 , H01L21/02186 , H01L21/02194 , H01L21/02266 , H01L21/02337 , H01L21/0234 , H01L21/31604 , H01L21/3162 , H01L21/67086 , H01L41/0533
摘要： A passivation layer comprises a titanium-doped aluminum oxide layer for passivation of ferroelectric materials such as Pt/SBt/Ir—Ta—O devices. The titanium-doped aluminum oxide layer for passivation of ferroelectric materials has reduced stress and improved passivation properties, and is easy to deposit and be oxidized. The passivation layer in the MFM Structure resists breakdown and peeling during annealing of the device in a forming gas ambient.

3. 发明授权

US06541385B2 Method for plasma etching of Ir-Ta-O electrode and for post-etch cleaning 失效
公开(公告)号：US06541385B2
公开(公告)日：2003-04-01
申请号：US09855393
申请日：2001-05-14
申请人： Hong Ying , Fengyan Zhang , Jer-Shen Maa , Sheng Teng Hsu
发明人： Hong Ying , Fengyan Zhang , Jer-Shen Maa , Sheng Teng Hsu
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , C04B41/009 , C04B41/5346 , C04B41/91 , C04B2111/00844 , H01L21/32136 , H01L28/60 , C04B35/495
摘要： A method of forming an electrode in an integrated circuit includes preparing a silicon-base substrate, including forming semiconductor structures on the substrate to form an integrated substrate structure; depositing a layer of electrode material on a substrate structure; patterning the layer of electrode material to form electrode elements, wherein said patterning includes plasma etching the layer of electrode material in a plasma reactor in an etching gas atmosphere having a fluorine component therein; and cleaning the substrate structure and electrode elements in a distilled water bath.

4. 发明授权

US06440752B1 Electrode materials with improved hydrogen degradation resistance and fabrication method 失效
标题翻译：具有改善耐氢降解性的电极材料和制造方法
公开(公告)号：US06440752B1
公开(公告)日：2002-08-27
申请号：US09817712
申请日：2001-03-26
申请人： Fengyan Zhang , Tingkai Li , Hong Ying , Yoshi Ono , Sheng Teng Hsu
发明人： Fengyan Zhang , Tingkai Li , Hong Ying , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01G706
CPC分类号： H01L28/75 , H01L21/31604 , H01L21/31683 , H01L28/55
摘要： An electrode for use in a ferroelectric device includes a bottom electrode; a ferroelectric layer; and a top electrode formed on the ferroelectric layer and formed of a combination of metals, including a first metal take from the group of metals consisting of platinum and iridium, and a second metal taken from the group of metals consisting of aluminum and titanium; wherein the top electrode acts as a passivation layer and wherein the top electrode remains conductive following high temperature annealing in a hydrogen atmosphere. A method of forming a hydrogen-resistant electrode in a ferroelectric device includes forming a bottom electrode; forming a ferroelectric layer on the bottom electrode; depositing a top electrode on the ferroelectric layer; including depositing, simultaneously, a first metal taken from the group of metals consisting of platinum and iridium; and a second metal taken from the group of metals consisting of aluminum and titanium; and forming a passivation layer by annealing the structure in an oxygen atmosphere to form an oxide passivation layer on the top electrode.
摘要翻译：用于铁电体器件的电极包括底部电极; 铁电层; 以及形成在强电介质层上并由金属组合形成的顶部电极，其包括从由铂和铱组成的金属组中的第一金属取得的金属和从由铝和钛组成的金属组中的第二金属; 其中所述顶部电极用作钝化层，并且其中所述顶部电极在氢气氛中的高温退火之后保持导电。在铁电体器件中形成耐氢电极的方法包括形成底电极; 在底部电极上形成铁电层; 在铁电层上沉积顶部电极; 包括同时从由铂和铱组成的金属组中取出的第一金属; 和从由铝和钛组成的金属组中获取的第二金属; 以及通过在氧气氛中对所述结构退火以在所述顶部电极上形成氧化物钝化层来形成钝化层。

5. 发明授权

US06833572B2 Electrode materials with improved hydrogen degradation resistance 失效
标题翻译：具有改善耐氢降解性的电极材料
公开(公告)号：US06833572B2
公开(公告)日：2004-12-21
申请号：US10229603
申请日：2002-08-27
申请人： Fengyan Zhang , Tingkai Li , Hong Ying , Yoshi Ono , Sheng Teng Hsu
发明人： Fengyan Zhang , Tingkai Li , Hong Ying , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L2976
CPC分类号： H01L28/75 , H01L21/31604 , H01L21/31683 , H01L28/55
摘要： An electrode for use in a ferroelectric device includes a bottom electrode; a ferroelectric layer; and a top electrode formed on the ferroelectric layer and formed of a combination of metals, including a first metal take from the group of metals consisting of platinum and iridium, and a second metal taken from the group of metals consisting of aluminum and titanium; wherein the top electrode acts as a passivation layer and wherein the top electrode remains conductive following high temperature annealing in a hydrogen atmosphere. A method of forming a hydrogen-resistant electrode in a ferroelectric device includes forming a bottom electrode; forming a ferroelectric layer on the bottom electrode; depositing a top electrode on the ferroelectric layer; including depositing, simultaneously, a first metal taken from the group of metals consisting of platinum and iridium; and a second metal taken from the group of metals consisting of aluminum and titanium; and forming a passivation layer by annealing the structure in an oxygen atmosphere to form an oxide passivation layer on the top electrode.
摘要翻译：用于铁电体器件的电极包括底部电极; 铁电层以及形成在强电介质层上并由金属组合形成的顶部电极，其包括从由铂和铱组成的金属组中的第一金属取得的金属和从由铝和钛组成的金属组中的第二金属; 其中所述顶部电极用作钝化层，并且其中所述顶部电极在氢气氛中的高温退火之后保持导电。在铁电体器件中形成耐氢电极的方法包括形成底电极; 在底部电极上形成铁电层; 在铁电层上沉积顶部电极; 包括同时从由铂和铱组成的金属组中取出的第一金属; 和从由铝和钛组成的金属组中获取的第二金属; 以及通过在氧气氛中对所述结构退火以在所述顶部电极上形成氧化物钝化层来形成钝化层。

6. 发明授权

US07645669B2 Nanotip capacitor 失效
标题翻译：纳米电容器
公开(公告)号：US07645669B2
公开(公告)日：2010-01-12
申请号：US11707712
申请日：2007-02-16
申请人： Sheng Teng Hsu , Fengyan Zhang
发明人： Sheng Teng Hsu , Fengyan Zhang
IPC分类号： H01L21/336
CPC分类号： H01L29/94 , B82Y10/00 , H01L28/91 , H01L29/66083
摘要： A nanotip capacitor and associated fabrication method are provided. The method provides a bottom electrode and grows electrically conductive nanotips overlying the bottom electrode. An electrically insulating dielectric is deposited overlying the nanotips, and an electrically conductive top electrode is deposited overlying dielectric-covered nanotips. Typically, the dielectric is deposited by forming a thin layer of dielectric overlying the nanotips using an atomic layer deposition (ALD) process. In one aspect, the electrically insulating dielectric covering the nanotips forms a three-dimensional interface of dielectric-covered nanotips. Then, the electrically conductive top electrode overlying the dielectric-covered nanotips forms a three-dimensional top electrode interface, matching the first three-dimensional interface of the dielectric-covered nanotips.
摘要翻译：提供了一种纳米尖端电容器和相关联的制造方法。该方法提供底部电极并且生长覆盖底部电极的导电的纳米技术。沉积覆盖在纳米尖端上的电绝缘电介质，并且将导电顶部电极沉积在覆盖有电介质的纳米尖端上。通常，通过使用原子层沉积（ALD）工艺形成覆盖在纳米尖端上的介电层的薄层来沉积电介质。在一个方面，覆盖纳米尖端的电绝缘电介质形成介电覆盖的纳米尖端的三维界面。然后，覆盖介电覆盖的纳米尖端的导电顶部电极形成三维顶部电极接口，与介电覆盖的纳米尖端的第一个三维界面相匹配。

7. 发明申请

US20080191636A1 Nanotip Electrode Electroluminescence Device 有权
标题翻译：纳米线电极电致发光器件
公开(公告)号：US20080191636A1
公开(公告)日：2008-08-14
申请号：US12042983
申请日：2008-03-05
申请人： Sheng Teng Hsu , Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff
发明人： Sheng Teng Hsu , Fengyan Zhang , Gregory M. Stecker , Robert A. Barrowcliff
IPC分类号： H05B41/16 , H01J1/62
CPC分类号： H05B33/145
摘要： An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top electrode. The Si phosphor layer is interposed between the bottom and top electrodes. The nanotips may have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. Typically, the nanotips are formed from iridium oxide (IrOx) nanotips. A MOCVD process forms the Ir bottom electrode. The IrOx nanotips are grown from the Ir. In one aspect, the Si phosphor layer is a SRSO layer. In response to an SRSO annealing step, nanocrystalline SRSO is formed with nanocrystals having a size in the range of 1 to 10 nm.
摘要翻译：提供了一种电致发光（EL）器件和用于制造具有纳米尖端电极的所述器件的方法。该方法包括：形成具有纳米尖端的底部电极; 在所述纳米尖端附近形成Si磷光体层; 并形成透明的顶部电极。 Si荧光体层介于底部和顶部电极之间。纳米尖端可以具有约50纳米或更小的尖端基部尺寸，5至50nm范围内的尖端高度，以及每平方毫米大于100纳米尖端的纳米密度密度。通常，纳米尖端由氧化铱（IrOx）纳米尖端形成。 MOCVD工艺形成Ir底部电极。 IrOx纳米尖嘴从Ir生长。在一个方面，Si磷光体层是SRSO层。响应于SRSO退火步骤，形成具有1至10nm范围内的尺寸的纳米晶体的纳米晶SRSO。

8. 发明授权

US07402456B2 PCMO thin film with memory resistance properties 有权
标题翻译：具有记忆电阻特性的PCMO薄膜
公开(公告)号：US07402456B2
公开(公告)日：2008-07-22
申请号：US10831677
申请日：2004-04-23
申请人： Wei-Wei Zhuang , Tingkai Li , Sheng Teng Hsu , Fengyan Zhang
发明人： Wei-Wei Zhuang , Tingkai Li , Sheng Teng Hsu , Fengyan Zhang
IPC分类号： H01L21/44
CPC分类号： H01L45/04 , G11C13/0004 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/31 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A method is provided for forming a Pr0.3Ca0.7MnO3 (PCMO) thin film with crystalline structure-related memory resistance properties. The method comprises: forming a PCMO thin film with a first crystalline structure; and, changing the resistance state of the PCMO film using pulse polarities responsive to the first crystalline structure. In one aspect the first crystalline structure is either amorphous or a weak-crystalline. Then, the resistance state of the PCMO film is changed in response to unipolar pulses. In another aspect, the PCMO thin film has either a polycrystalline structure. Then, the resistance state of the PCMO film changes in response to bipolar pulses.
摘要翻译：提供了一种用于形成具有结晶结构相关的记忆电阻性质的Pr 0.3M 3 Ca 0.7 MnO 3（PCMO）薄膜的方法。该方法包括：形成具有第一晶体结构的PCMO薄膜; 并且使用响应于第一晶体结构的脉冲极性来改变PCMO膜的电阻状态。在一个方面，第一晶体结构是无定形或弱结晶。然后，响应于单极脉冲改变PCMO膜的电阻状态。另一方面，PCMO薄膜具有多晶结构。然后，PCMO膜的电阻状态响应于双极性脉冲而改变。

9. 发明授权

US07148533B2 Memory resistance film with controlled oxygen content 有权
公开(公告)号：US07148533B2
公开(公告)日：2006-12-12
申请号：US11226998
申请日：2005-09-14
申请人： Sheng Teng Hsu , Fengyan Zhang
发明人： Sheng Teng Hsu , Fengyan Zhang
IPC分类号： H01L27/96
CPC分类号： G11C13/0007 , G11C2213/31 , H01L27/016 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1641
摘要： A memory cell and method for controlling the resistance properties in a memory material are provided. The method comprises: forming manganite; annealing the manganite in an oxygen atmosphere; controlling the oxygen content in the manganite in response to the annealing; and, controlling resistance through the manganite in response to the oxygen content. The manganite is perovskite-type manganese oxides with the general formula RE1-xAExMnOy, where RE is a rare earth ion and AE is an alkaline-earth ion, with x in the range between 0.1 and 0.5. Controlling the oxygen content in the manganite includes forming an oxygen-rich RE1-xAExMnOy region where y is greater than 3. A low resistance results in the oxygen-rich manganite region. When y is less than 3, a high resistance is formed. More specifically, the process forms a low resistance oxygen-rich manganite region adjacent an oxygen-deficient high resistance manganite region.

10. 发明授权

US06949435B2 Asymmetric-area memory cell 有权
标题翻译：非对称区记忆单元
公开(公告)号：US06949435B2
公开(公告)日：2005-09-27
申请号：US10730726
申请日：2003-12-08
申请人： Sheng Teng Hsu , Fengyan Zhang
发明人： Sheng Teng Hsu , Fengyan Zhang
IPC分类号： H01L21/28 , G11C11/15 , G11C13/00 , H01L21/3205 , H01L21/8239 , H01L21/8246 , H01L23/52 , H01L27/105 , H01L27/115 , H01L27/22 , H01L27/24 , H01L29/68 , H01L43/08 , H01L45/00 , H01L21/336
CPC分类号： H01L27/105 , G11C13/0007 , G11C2213/31 , G11C2213/52 , H01L27/1052 , H01L27/112 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1675
摘要： An asymmetric-area memory cell, and a fabrication method for forming an asymmetric-area memory cell, are provided. The method includes: forming a bottom electrode having an area; forming a CMR memory film overlying the bottom electrode, having an asymmetric area; and, forming a top electrode having an area, less than the bottom electrode area, overlying the CMR film. In one aspect, the CMR film has a first area adjacent the top electrode and a second area, greater than the first area, adjacent the bottom electrode. Typically, the CMR film first area is approximately equal to the top electrode area, although the CMR film second area may be less than the bottom electrode area.
摘要翻译：提供了一种不对称区域存储单元和用于形成非对称区域存储单元的制造方法。该方法包括：形成具有面积的底部电极; 形成覆盖在底部电极上的具有不对称区域的CMR存储膜; 并且形成覆盖CMR膜的具有小于底部电极区域的面积的顶部电极。在一个方面，CMR膜具有邻近顶部电极的第一区域和与底部电极相邻的大于第一区域的第二区域。通常，尽管CMR膜的第二区域可能小于底部电极区域，但是CMR膜的第一区域大致等于顶部电极区域。

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